Lista de obras - Jonas Sundqvist - Dominio Público Uruguay

Analytical TEM characterization of the interfacial layer between ALD HfO2 film and silicon substrate

artículo científico publicado en 2005

Atomic Layer Deposition of Epitaxial and Polycrystalline SnO2 Films from the SnI4/O2 Precursor Combination

artículo científico publicado en 2003

Atomic Layer Deposition of High-Permittivity Yttrium-Doped HfO[sub 2] Films

article

Atomic Layer Deposition of Ruthenium Films from (Ethylcyclopentadienyl)(pyrrolyl)ruthenium and Oxygen

scholarly article by Kaupo Kukli et al published 2011 in Journal of the Electrochemical Society

Atomic Layer Deposition of Ta2O5 Using the TaI5 and O2 Precursor Combination

artículo científico publicado en 2003

Atomic Layer Deposition of Tantalum Oxide Thin Films from Iodide Precursor

artículo científico publicado en 2000

Atomic layer deposition of polycrystalline HfO2 films by the HfI4–O2 precursor combination

artículo científico publicado en 2003

Atomic layer deposition of ruthenium films on strontium titanate

artículo científico publicado en 2011

Atomic layer etching of gallium nitride (0001)

artículo científico publicado en 2017

CVD of Epitaxial SnO2 Films by the SnI4/O2 Precursor Combination

artículo científico publicado en 2004

Conformity and structure of titanium oxide films grown by atomic layer deposition on silicon substrates

artículo científico publicado en 2008

Detailed leakage current analysis of metal–insulator–metal capacitors with ZrO 2 , ZrO 2 /SiO 2 /ZrO 2 , and ZrO 2 /Al 2 O 3 /ZrO 2 as dielectric and TiN electrodes

artículo científico publicado en 2013

Effect of different PDAs and a PMA on the electrical performance of TiN/ZAZ/TiN MIM capacitors

artículo científico publicado en 2012

Effect of selected atomic layer deposition parameters on the structure and dielectric properties of hafnium oxide films

scholarly article by Kaupo Kukli et al published November 2004 in Journal of Applied Physics

Erratum: Effect of selected atomic layer deposition parameters on the structure and dielectric properties of hafnium oxide films [J. Appl. Phys. 96, 5298 (2004)]

scholarly article by Kaupo Kukli et al published May 2005 in Journal of Applied Physics

Ferroelectric Zr0.5Hf0.5O2thin films for nonvolatile memory applications

Ferroelectric deep trench capacitors based on Al:HfO 2 for 3D nonvolatile memory applications

artículo científico publicado en 2014

Ferroelectricity in HfO 2 enables nonvolatile data storage in 28 nm HKMG

Ferroelectricity in yttrium-doped hafnium oxide

scholarly article by J. Müller et al published December 2011 in Journal of Applied Physics

Fluorine interface treatments within the gate stack for defect passivation in 28 nm high-k metal gate technology

artículo científico publicado en 2015

Gas sensing properties of epitaxial SnO2 thin films prepared by atomic layer deposition

artículo científico publicado en 2003

Green CVD—Toward a sustainable philosophy for thin film deposition by chemical vapor deposition

artículo científico publicado en 2021

Growth of SnO2 thin films by atomic layer deposition and chemical vapour deposition: A comparative study

artículo científico publicado en 2006

Hafnium tetraiodide and oxygen as precursors for atomic layer deposition of hafnium oxide thin films

scholarly article by Jaan Aarik et al published October 2002 in Thin Solid Films

HfO 2 gate dielectrics on strained-Si and strained-SiGe layers

artículo científico publicado en 2003

HfO/sub 2/ for strained-Si and strained-SiGe MOSFETs

High-Definition Nanoimprint Stamp Fabrication by Atomic Layer Etching

artículo científico publicado en 2018

Impact of layer thickness on the ferroelectric behaviour of silicon doped hafnium oxide thin films

artículo científico publicado en 2013

Incipient Ferroelectricity in Al-Doped HfO2 Thin Films

artículo científico publicado en 2012

Influence of TiO2 incorporation in HfO2 and Al2O3 based capacitor dielectrics

artículo científico publicado en 2007

Introduction of zirconium oxide in a hardmask concept for highly selective patterning of scaled high aspect ratio trenches in silicon

artículo científico publicado en 2012

Low temperature deposition of silicon nitride using Si3Cl8

artículo científico publicado en 2015

Microstructure characterisation of ALD-grown epitaxial SnO2 thin films

artículo científico publicado en 2004

Na 0.5 K 0.5 NbO 3 Thin Films for MFIS_FET Type Non-Volatile Memory Applications

artículo científico publicado en 2002

Nanoepitaxy of SnO2 on α-Al2O3(012)

artículo científico publicado en 2003

New routes to SnO2 heteroepitaxy

artículo científico publicado en 2002

Properties of hafnium oxide films grown by atomic layer deposition from hafnium tetraiodide and oxygen

scholarly article by Kaupo Kukli et al published 15 November 2002 in Journal of Applied Physics

Review Article: Recommended reading list of early publications on atomic layer deposition—Outcome of the “Virtual Project on the History of ALD”

article published in 2017

Scaling and optimization of high-density integrated Si-capacitors

artículo científico publicado en 2013

SiGe epitaxy on a 300 mm batch furnace

artículo científico publicado en 2011

Structural properties of as deposited and annealed ZrO 2 influenced by atomic layer deposition, substrate, and doping

artículo científico publicado en 2013

Synthesis of SrTiO 3 by crystallization of SrO/TiO 2 superlattices prepared by atomic layer deposition

artículo científico publicado en 2011

TEMAZ/O 3 atomic layer deposition process with doubled growth rate and optimized interface properties in metal–insulator–metal capacitors

artículo científico publicado en 2013

Lista de obras de Jonas Sundqvist

Analytical TEM characterization of the interfacial layer between ALD HfO2 film and silicon substrate

Atomic Layer Deposition of Epitaxial and Polycrystalline SnO2 Films from the SnI4/O2 Precursor Combination

Atomic Layer Deposition of High-Permittivity Yttrium-Doped HfO[sub 2] Films

Atomic Layer Deposition of Ruthenium Films from (Ethylcyclopentadienyl)(pyrrolyl)ruthenium and Oxygen

Atomic Layer Deposition of Ta2O5 Using the TaI5 and O2 Precursor Combination

Atomic Layer Deposition of Tantalum Oxide Thin Films from Iodide Precursor

Atomic layer deposition of polycrystalline HfO2 films by the HfI4–O2 precursor combination

Atomic layer deposition of ruthenium films on strontium titanate

Atomic layer etching of gallium nitride (0001)

CVD of Epitaxial SnO2 Films by the SnI4/O2 Precursor Combination

Conformity and structure of titanium oxide films grown by atomic layer deposition on silicon substrates

Detailed leakage current analysis of metal–insulator–metal capacitors with ZrO 2 , ZrO 2 /SiO 2 /ZrO 2 , and ZrO 2 /Al 2 O 3 /ZrO 2 as dielectric and TiN electrodes

Effect of different PDAs and a PMA on the electrical performance of TiN/ZAZ/TiN MIM capacitors

Effect of selected atomic layer deposition parameters on the structure and dielectric properties of hafnium oxide films

Erratum: Effect of selected atomic layer deposition parameters on the structure and dielectric properties of hafnium oxide films [J. Appl. Phys. 96, 5298 (2004)]

Ferroelectric Zr0.5Hf0.5O2thin films for nonvolatile memory applications

Ferroelectric deep trench capacitors based on Al:HfO 2 for 3D nonvolatile memory applications

Ferroelectricity in HfO 2 enables nonvolatile data storage in 28 nm HKMG

Ferroelectricity in yttrium-doped hafnium oxide

Fluorine interface treatments within the gate stack for defect passivation in 28 nm high-k metal gate technology

Gas sensing properties of epitaxial SnO2 thin films prepared by atomic layer deposition

Green CVD—Toward a sustainable philosophy for thin film deposition by chemical vapor deposition

Growth of SnO2 thin films by atomic layer deposition and chemical vapour deposition: A comparative study

Hafnium tetraiodide and oxygen as precursors for atomic layer deposition of hafnium oxide thin films

HfO 2 gate dielectrics on strained-Si and strained-SiGe layers

HfO/sub 2/ for strained-Si and strained-SiGe MOSFETs

High-Definition Nanoimprint Stamp Fabrication by Atomic Layer Etching

Impact of layer thickness on the ferroelectric behaviour of silicon doped hafnium oxide thin films

Incipient Ferroelectricity in Al-Doped HfO2 Thin Films

Influence of TiO2 incorporation in HfO2 and Al2O3 based capacitor dielectrics

Introduction of zirconium oxide in a hardmask concept for highly selective patterning of scaled high aspect ratio trenches in silicon

Low temperature deposition of silicon nitride using Si3Cl8

Microstructure characterisation of ALD-grown epitaxial SnO2 thin films

Na 0.5 K 0.5 NbO 3 Thin Films for MFIS_FET Type Non-Volatile Memory Applications

Nanoepitaxy of SnO2 on α-Al2O3(012)

New routes to SnO2 heteroepitaxy

Properties of hafnium oxide films grown by atomic layer deposition from hafnium tetraiodide and oxygen

Review Article: Recommended reading list of early publications on atomic layer deposition—Outcome of the “Virtual Project on the History of ALD”

Scaling and optimization of high-density integrated Si-capacitors

SiGe epitaxy on a 300 mm batch furnace

Structural properties of as deposited and annealed ZrO 2 influenced by atomic layer deposition, substrate, and doping

Synthesis of SrTiO 3 by crystallization of SrO/TiO 2 superlattices prepared by atomic layer deposition

TEMAZ/O 3 atomic layer deposition process with doubled growth rate and optimized interface properties in metal–insulator–metal capacitors