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Lista de obras de Erik Janzén

2.5 kV ion-implanted p+ n diodes in 6H-SiC

3C-SiC Heteroepitaxy on Hexagonal SiC Substrates

4H-SiC Epitaxial Layers Grown on On-Axis Si-Face Substrate

A 3 kV Schottky barrier diode in 4H-SiC

A 4.5 kV 6H silicon carbide rectifier

scholarly article by Olof Kordina et al published 11 September 1995 in Applied Physics Letters

A SiC Varactor With Large Effective Tuning Range for Microwave Power Applications

A model for carbon incorporation from trimethyl gallium in chemical vapor deposition of gallium nitride

article

A practical model for estimating the growth rate in sublimation growth of SiC

article

A spectroscopic study of a metastable defect in silicon

A surface study of wet etched AlGaN epilayers grown by hot-wall MOCVD

A temperature dependent measurement of the carrier velocity vs. electric field characteristic for as-grown and H-intercalated epitaxial graphene on SiC

article

Ab Initio Study of Growth Mechanism of 4H–SiC: Adsorption and Surface Reaction of C2H2, C2H4, CH4, and CH3

Ab initiodensity-functional supercell calculations of hydrogen defects in cubic SiC

scholarly article in Physical Review B, vol. 63 no. 24, May 2001

Ab initiosupercell calculations on aluminum-related defects in SiC

scholarly article by Adam Gali et al published 31 January 2007 in Physical Review B

Acceptor incorporation in SiC epilayers grown at high growth rate with chloride-based CVD

Accurate defect levels obtained from the HSE06 range-separated hybrid functional

scholarly article in Physical Review B, vol. 81 no. 15, April 2010

Activation of shallow boron acceptor in C∕B coimplanted silicon carbide: A theoretical study

scholarly article by Adam Gali et al published 7 March 2005 in Applied Physics Letters

Adsorption and surface diffusion of silicon growth species in silicon carbide chemical vapour deposition processes studied by quantum-chemical computations

article

Aggregation of carbon interstitials in silicon carbide: A theoretical study

artículo científico publicado en 2003

AlGaInN metal-organic-chemical-vapor-deposition gas-phase chemistry in hydrogen and nitrogen diluents: First-principles calculations

AlGaN/GaN high electron mobility transistors with intentionally doped GaN buffer using propane as carbon precursor

article

All-optical characterization of carrier lifetimes and diffusion lengths in MOCVD-, ELO-, and HVPE- grown GaN

Aluminum doping of epitaxial silicon carbide

scholarly article by U Forsberg et al published June 2003 in Journal of Crystal Growth

Analysis of the sharp donor-acceptor pair luminescence in4H-SiC doped with nitrogen and aluminum

scholarly article by Ivan G. Ivanov et al published 30 April 2003 in Physical Review B

Anisotropy of dissolution and defect revealing on SiC surfaces

Annealing behavior of the EB-centers and M-center in low-energy electron irradiated n-type 4H-SiC

Annealing behavior of the carbon vacancy in electron-irradiated 4H-SiC

Anti-site pair in SiC: a model of the DI center

Application of picosecond four-wave mixing and photoluminescence techniques for investigation of carrier dynamics in bulk crystals and heterostructures of GaN

article

Assessment of H-intercalated graphene for microwave FETs through material characterization and electron transport studies

article

Asymmetric Split-Vacancy Defects in SiC Polytypes: A Combined Theoretical and Electron Spin Resonance Study

artículo científico publicado en 2011

Barrier height determination for n-type 4H-SiC schottky contacts made using various metals

article by R. Yakimova et al published July 1998 in Journal of Electronic Materials

Behavior of background impurities in thick 4H–SiC epitaxial layers

Bistable defects in low-energy electron irradiated n-type 4H-SiC

article published in 2010

Boron-related luminescence in SiC

Brominated Chemistry for Chemical Vapor Deposition of Electronic Grade SiC

CVD Growth of 3C-SiC on 4H-SiC Substrate

CVD Heteroepitaxial Growth of 3C-SiC on 4H-SiC (0001) Substrates

Capacitance transient studies of electron irradiated 4H-SiC

Capacitance transient study of a bistable deep level in e−-irradiated n-type 4H–SiC

Capture cross sections of electron irradiation induced defects in 6H–SiC

Capture processes at double donors in silicon

artículo científico publicado en 1985

Capture, emission and recombination at a deep level via an excited state

Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

article

Carbon vacancy-related defect in 4Hand 6HSiC

scholarly article in Physical Review B, vol. 63 no. 20, April 2001

Carbon-tuned cathodoluminescence of semi-insulating GaN

Carbon-vacancy related defects in 4H- and 6H-SiC

Carrier Lifetime Controlling Defects Z1/2 and RB1 in Standard and Chlorinated Chemistry Grown 4H-SiC

Carrot Defect Control in Chloride-Based CVD through Optimized Ramp up Conditions

Cathodoluminescence identification of donor–acceptor related emissions in as-grown 4H–SiC layers

Characterization of GaN/SiC Epilayers by Picosecond Four-Wave Mixing Technique

Characterization of InGaN/GaN quantum well growth using monochromated valence electron energy loss spectroscopy

Characterization of the Mn acceptor level in GaAs

Characterization of the nitrogen split interstitial defect in wurtzite aluminum nitride using density functional theory ⬇️

scholarly article by A. Szállás et al published 21 September 2014 in Journal of Applied Physics

Chemical identification of deep energy levels in Si:Se

Chenet al.Reply

scientific article published on 01 November 1995

Chloride Based CVD of 3C-SiC on (0001) α-SiC Substrates

Chloride-Based CVD Growth of Silicon Carbide for Electronic Applications

scholarly article by Henrik Pedersen et al published 2 December 2011 in Chemical Reviews

Chloride-Based CVD at High Growth Rates on 3” Vicinal Off-Angles SiC Wafers

Chloride-Based CVD at High Rates of 4H-SiC on On-Axis Si-Face Substrates

Chloride-Based CVD of 4H-SiC at High Growth Rates on Substrates with Different Off-Angles

article published in 2012

Chloride-Based SiC Epitaxial Growth

Chloride-Based SiC Epitaxial Growth toward Low Temperature Bulk Growth

Chloride-based CVD of 3C-SiC epitaxial layers on 6H(0001) SiC

Chlorinated precursor study in low temperature chemical vapor deposition of 4H-SiC

Clustering of vacancy defects in high-purity semi-insulating SiC

scholarly article in Physical Review B, vol. 75 no. 8, February 2007

Coherent control of single spins in silicon carbide at room temperature

artículo científico publicado en 2014

Common point defects in as-grown ZnO substrates studied by optical detection of magnetic resonance

Comparison of SiC sublimation epitaxial growth in graphite and TaC coated crucibles

Concentrated Chloride-Based Epitaxial Growth of 4H-SiC

Configuration transformation of metastable defects in 6H-SiC

Control of Epitaxial Graphene Thickness on 4H-SiC(0001) and Buffer Layer Removal through Hydrogen Intercalation

Controlled growth of hexagonal GaN pyramids by hot-wall MOCVD

Correlation between switching to n-type conductivity and structural defects in highly Mg-doped InN

Correlation between the antisite pair and theDIcenter in SiC

scholarly article in Physical Review B, vol. 67 no. 15, April 2003

Cross-sectional cleavages of SiC for evaluation of epitaxial layers

Crystalline imperfections in 4H SiC grown with a seeded Lely method

Current status and advances in the growth of SiC

Deep level defects in electron-irradiated 4H SiC epitaxial layers

Deep levels and carrier compensation in V-doped semi-insulating 4H-SiC

Deep levels created by low energy electron irradiation in 4H-SiC

Deep levels in 4H-SiC layers grown by sublimation epitaxy

Deep levels in as-grown and electron-irradiated n-type GaN studied by deep level transient spectroscopy and minority carrier transient spectroscopy

Deep levels in iron doped n- and p-type 4H-SiC

Deep levels in low-energy electron-irradiated 4H-SiC

Deep levels in tungsten doped n-type 3C–SiC

Deep luminescent centres in electron-irradiated 6H SiC

Deep sulfur‐related centers in silicon

Defect analysis in Lely-grown 6H SiC

Defect mapping in 4H-SiC wafers

Defect origin and development in sublimation grown SiC boules

article

Defects Introduced by Electron-Irradiation at Low Temperatures in SiC

Defects and carrier compensation in semi-insulating4H−SiCsubstrates

scholarly article in Physical Review B, vol. 75 no. 15, April 2007

Defects at nitrogen site in electron-irradiated AlN

Defects in 4H-SiC Layers Grown by Chloride-Based Epitaxy

Defects in SiC

Defects in low-energy electron-irradiated n-type 4H-SiC

Defects in silicon carbide grown by fluorinated chemical vapor deposition chemistry

scholarly article by Pontus Stenberg et al published April 2018 in Physica B

Determination of Nitrogen Doping Concentration in Doped 4H-SiC Epilayers by Low Temperature Photoluminescence

Determination of the electron effective-mass tensor in 4HSiC

artículo científico publicado en 1996

Dicarbon antisite defect inn-type4H-SiC

scholarly article in Physical Review B, vol. 79 no. 11, March 2009

Diffusion of hydrogen in perfect,p-type doped, and radiation-damaged4H−SiC

scholarly article in Physical Review B, vol. 69 no. 23, June 2004

Direct Determination of the Electron-Electron-Hole Auger Threshold Energy in Silicon

artículo científico publicado en 1994

Direct current magnetron sputtered ZrB2 thin films on 4H-SiC(0001) and Si(100)

Direct generation of linearly polarized photon emission with designated orientations from site-controlled InGaN quantum dots

Direct observation of intercenter charge transfer in dominant nonradiative recombination channels in silicon

artículo científico publicado en 1991

Dislocation evolution in 4H-SiC epitaxial layers

Dispersive Effects in Microwave AlGaN/AlN/GaN HEMTs With Carbon-Doped Buffer

Divacancy in 4H-SiC

artículo científico publicado en 2006

Domain misorientation in sublimation grown 4H SiC epitaxial layers

Dominant recombination center in electron‐irradiated 3CSiC

Donor incorporation in SiC epilayers grown at high growth rate with chloride-based CVD

article published in 2009

Donor-Acceptor Pair Luminescence of P-Al and N-Al Pairs in 3C-SiC and the Ionization Energy of the P Donor

Doping-induced strain in N-doped 4H–SiC crystals

Dynamics of the nitrogen-bound excitons in 6HSiC

article

EPR Identification of Defects and Impurities in SiC: To be Decisive

EPR Identification of Intrinsic Defects in SiC

EPR and ENDOR Studies of Shallow Donors in SiC

article by Nguyen Tien Son et al published 26 May 2010 in Applied Magnetic Resonance

EPR and theoretical studies of negatively charged carbon vacancy in4H−SiC

scholarly article in Physical Review B, vol. 71 no. 19, May 2005

EPR and theoretical studies of positively charged carbon vacancy in 4H-SiC

EPR andab initiocalculation study on the EI4 center in4H- and6H-SiC

scholarly article in Physical Review B, vol. 82 no. 23, December 2010

EPR identification of intrinsic defects in SiC

Effect of Process Parameters on Dislocation Density in Thick 4H-SiC Epitaxial Layers Grown by Chloride-Based CVD on 4° Off-Axis Substrates

Effect of impurity incorporation on crystallization in AlN sublimation epitaxy

Effect of vapor composition on polytype homogeneity of epitaxial silicon carbide

article

Effective Masses in SiC Determined by Cyclotron Resonance Experiments

Effective mass of electron in monolayer graphene: Electron-phonon interaction

Effective-mass approximation for shallow donors in uniaxial indirect band-gap crystals and application to4H−SiC

article by Ivan G. Ivanov et al published 18 January 2006 in Physical Review B

Effects of microwave fields on recombination processes in 4H and 6H SiC

Effects of phosphorous-doping and high temperature annealing on CVD grown 3C-SiC

Electrical characterization of metastable carbon clusters inSiC: A theoretical study

scholarly article in Physical Review B, vol. 73 no. 3, January 2006

Electrical properties and formation mechanism of porous silicon carbide

scholarly article by A. O. Konstantinov et al published 21 November 1994 in Applied Physics Letters

Electrically active defects inn-type 4H–silicon carbide grown in a vertical hot-wall reactor

scholarly article by J. Zhang et al published 15 April 2003 in Journal of Applied Physics

Electron Paramagnetic Resonance Studies of Nb in 6H-SiC

article published in 2013

Electron capture cross-section in copper doped CdS

Electron effective mass in Al0.72Ga0.28N alloys determined by mid-infrared optical Hall effect

Electron effective masses and mobilities in high‐purity 6H–SiC chemical vapor deposition layers

article

Electron effective masses in 4H SiC

Electron paramagnetic resonance and theoretical studies of Nb in 4H- and 6H-SiC

Electron paramagnetic resonance and theoretical studies of shallow phosphorous centers in3C-,4H-, and6H−SiC

article by Nguyen Tien Son et al published 1 February 2006 in Physical Review B

Electron paramagnetic resonance study on n-type electron-irradiated 3C-SiC

Electron-paramagnetic-resonance studies of defects in electron-irradiated p-type 4H and 6H SiC

article published in 1999

Electronic Configuration of Tungsten in 4H-, 6H-, and 15R-SiC

Electronic band structure in hexagonal close-packed Si polytypes

Electronic properties of Si-doped Alx Ga1−xN with aluminum mole fractions above 80%

scholarly article by Frank Mehnke et al published 14 October 2016 in Journal of Applied Physics

Electronic properties of defects in high-fluence electron-irradiated bulk GaN

Electronic properties of selenium‐doped silicon

article published in 1980

Electronic structure of a photoluminescent center in silver-doped silicon

scientific article published on 01 June 1994

Electronic structure of the GaAs:MnGascenter

scholarly article in Physical Review B, vol. 55 no. 11, March 1997

Electronic structure of the neutral silicon vacancy in4Hand6HSiC

scholarly article in Physical Review B, vol. 62 no. 24, December 2000

Electrothermal actuation of silicon carbide ring resonators

scholarly article by Enrico Mastropaolo et al published 2009 in Journal of Vacuum Science & Technology B

Epitaxial growth of 4H SiC in a vertical hot-wall CVD reactor: Comparison between up- and down-flow orientations

Epitaxial growth of SiC in a chimney CVD reactor

Epitaxial growth of SiC with chlorinated precursors on different off-angle substrates

Excitation properties of hydrogen-related photoluminescence in6H−SiC

scholarly article in Physical Review B, vol. 62 no. 11, September 2000

Excitation spectra of nitrogen bound excitons in 4H- and 6H-SiC

Extraction and scattering analyses of 2D and bulk carriers in epitaxial graphene-on-SiC structure

Fabrication and properties of high-resistivity porous silicon carbide for SiC power device passivation

scholarly article by A.O. Konstantinov et al published January 1995 in Materials Science and Engineering B: Advanced Functional Solid-state Materials

Fabrication of beam resonators from hot-wall chemical vapour deposited SiC

Fano resonances in chalcogen-doped silicon

artículo científico publicado en 1985

Fano resonances in sulfur, selenium and tellurium doped silicon

scholarly article published March 1983

Fast Growth Rate Epitaxy on 4° Off-Cut 4-Inch Diameter 4H-SiC Wafers

Fast chemical sensing with metal-insulator silicon carbide structures

scholarly article by P. Tobias et al published June 1997 in IEEE Electron Device Letters

Finding the Optimum Chloride-Based Chemistry for Chemical Vapor Deposition of SiC

article published in 2014

First Principles Identification of Divacancy Related Photoluminescence Lines in 4H and 6H-SiC

First Principles Investigation of Divacancy in SiC Polytypes for Solid State Qubit Application

Ga-bound excitons in 3C-, 4H-, and 6H-SiC

artículo científico publicado en 1996

Gas-Phase Modeling of Chlorine-Based Chemical Vapor Deposition of Silicon Carbide

scholarly article by Stefano Leone et al published 8 March 2012 in Crystal Growth & Design

Graphene self-switching diodes as zero-bias microwave detectors

article

Group-II acceptors in wurtzite AlN: A screened hybrid density functional study

Growth Mechanism of SiC Chemical Vapor Deposition: Adsorption and Surface Reactions of Active Si Species

Growth and Photoluminescence Study of Aluminium Doped SiC Epitaxial Layers

Growth and Properties of SiC On-Axis Homoepitaxial Layers

Growth and characterization of epitaxial ultra-thin NbN films on 3C-SiC/Si substrate for terahertz applications

Growth and electronic properties of epitaxial TiN thin films on 3C-SiC(001) and 6H-SiC(0001) substrates by reactive magnetron sputtering

Growth characteristics of SiC in a hot-wall CVD reactor with rotation

article published in 2002

Growth characteristics of chloride-based SiC epitaxial growth

Growth of 3CSiC on on-axis Si(100) substrates by chemical vapor deposition

Growth of 4H-SiC Epitaxial Layers on 4° Off-Axis Si-Face Substrates

Growth of 4H-SiC from liquid phase

Growth of 6H and 4H–SiC by sublimation epitaxy

Growth of SiC from the liquid phase: wetting and dissolution of SiC

Growth of Thick 4H-SiC Epitaxial Layers on On-Axis Si-Face Substrates with HCl Addition

article

Growth of high‐quality 3C‐SiC epitaxial films on off‐axis Si(001) substrates at 850 °C by reactive magnetron sputtering

Growth of silicon carbide: process-related defects

scholarly article by R. Yakimova et al published December 2001 in Applied Surface Science

Growth of smooth 4H-SiC epilayers on 4° off-axis substrates with chloride-based CVD at very high growth rate

Growth rate predictions of chemical vapor deposited silicon carbide epitaxial layers

scholarly article by Örjan Danielsson et al published August 2002 in Journal of Crystal Growth

Growth-related structural defects in seeded sublimation-grown SiC

Hardness, internal stress and fracture toughness of epitaxial AlxGa1−xAs films

Heat Capacity of 4H-SiC Determined by Differential Scanning Calorimetry

High Growth Rate of 4H-SiC Epilayers on On-Axis Substrates with Different Chlorinated Precursors

High Growth Rate with Reduced Surface Roughness during On-Axis Homoepitaxial Growth of 4H-SiC

High quality 4H-SiC grown on various substrate orientations

High quality 4H‐SiC epitaxial layers grown by chemical vapor deposition

High quality 6H-SiC (0001) homoepitaxial layers as substrate surface for growth of AlN epitaxial layers

High temperature CVD growth of SiC

High temperature chemical vapor deposition of SiC

High temperature optical properties of GaAs/AlGaAs double heterostructures

High thermal stability quasi-free-standing bilayer graphene formed on 4H–SiC(0 0 0 1) via platinum intercalation

scholarly article in Carbon, vol. 79, November 2014

High-Resolution Raman and Luminescence Spectroscopy of Isotope-Pure 28 Si 12 C, Natural and 13 C – Enriched 4H-SiC

High-Resolution Time-Resolved Carrier Lifetime and Photoluminescence Mapping of 4H-SiC Epilayers

High-quality AlN layers grown by hot-wall MOCVD at reduced temperatures

High-resolution studies of sulfur- and selenium-related donor centers in silicon

scholarly article by Erik Janzén et al published 15 February 1984 in Physical Review B

Hole effective masses in 6H-SiC from optically detected cyclotron resonance

scholarly article in Physical Review B, vol. 66 no. 4, July 2002

Homo-Epitaxial Growth on Low-Angle Off Cut 4H-SiC Substrate

article published in 2014

Homoepitaxial Growth of 4H-SiC on On-Axis Si-Face Substrates Using Chloride-Based CVD

Hot-Wall MOCVD for Highly Efficient and Uniform Growth of AlN

Hot-wall MOCVD grown homoepitaxial GaN layers with intense intrinsic excitonic structure

Hydrogen at zinc vacancy of ZnO: An EPR and ESEEM study

Hydrogen passivation of nitrogen in SiC

article published in 2003

Hyperfine interaction of the nitrogen donor in4H−SiC

scholarly article in Physical Review B, vol. 70 no. 19, November 2004

Identification of Niobium in 4H-SiC by EPR and Ab Initio Studies

scholarly article published May 2012

Identification of a Frenkel-pair defect in electron-irradiated 3CSiC

scholarly article in Physical Review B, vol. 80 no. 12, September 2009

Identification of divacancies in 4H-SiC

Identification of the Carbon Antisite-Vacancy Pair in4H-SiC

artículo científico publicado en 2006

Identification of the Negative Carbon Vacancy at Quasi-Cubic Site in 4H-SiC by EPR and Theoretical Calculations

Identification of the Negative Di-Carbon Antisite Defect in n-Type 4H-SiC

Identification of the gallium vacancy–oxygen pair defect in GaN

scholarly article in Physical Review B, vol. 80 no. 15, October 2009

Impact of anharmonic effects on the phase stability, thermal transport, and electronic properties of AlN

scholarly article in Physical Review B, vol. 94 no. 10, September 2016

Impact of dielectric parameters on the reflectivity of 3C–SiC wafers with a rough surface morphology in the reststrahlen region

Impact of residual carbon on two-dimensional electron gas properties in AlxGa1−xN/GaN heterostructure

Improved Epilayer Surface Morphology on 2˚ Off-Cut 4H-SiC Substrates

Improved Ni ohmic contact on n-type 4H-SiC

Improved hot-wall MOCVD growth of highly uniform AlGaN/GaN/HEMT structures

Improved morphology for epitaxial growth on 4° off-axis 4H-SiC substrates

Impurity concentration determination in 6H-SiC

Impurity-controlled dopant activation: Hydrogen-determined site selection of boron in silicon carbide

scholarly article by B. Aradi et al published 22 October 2001 in Applied Physics Letters

In situ substrate preparation for high-quality SiC chemical vapour deposition

In-grown stacking-faults in 4H-SiC epilayers grown on 2° off-cut substrates

In-situ surface preparation of nominally on-axis 4H-SiC substrates

InGaN quantum dot formation mechanism on hexagonal GaN/InGaN/GaN pyramids

artículo científico publicado en 2012

Incorporation of dopants in epitaxial SiC layers grown with fluorinated CVD chemistry

Influence of Growth Mechanism on Carrier Lifetime in On-Axis Homoepitaxial Layers of 4H-SiC

Influence of Growth Temperature on Carrier Lifetime in 4H-SiC Epilayers

Influence of Large-Aspect-Ratio Surface Roughness on Electrical Characteristics of AlGaN/AlN/GaN HFETs

Influence of epitaxial growth and substrate-induced defects on the breakdown of 4H–SiC Schottky diodes

Infrared dielectric functions, phonon modes, and free-charge carrier properties of high-Al-content AlxGa1−xN alloys determined by mid infrared spectroscopic ellipsometry and optical Hall effect

Interface chemistry and electric characterisation of nickel metallisation on 6HSiC

scholarly article by Ts. Marinova et al published June 1996 in Applied Surface Science

Intrinsic defects in high-purity SiC

Investigation of Intrinsic Carbon-Related Defects in 4H-SiC by Selective-Excitation Photoluminescence Spectroscopy

Investigation of deep levels in bulk GaN material grown by halide vapor phase epitaxy

Investigation of domain evolution in sublimation epitaxy of SiC

Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors

Investigation of the temperature profile in a hot-wall SiC chemical vapor deposition reactor

article by Örjan Danielsson et al published February 2002 in Journal of Crystal Growth

Investigation of thermal properties in fabricated 4H-SiC high power bipolar transistors

article

Investigation on origin of Z1/2 center in SiC by deep level transient spectroscopy and electron paramagnetic resonance

article published in 2013

Ionization energy of the phosphorus donor in 3C–SiC from the donor-acceptor pair emission

Isolated Spin Qubits in SiC with a High-Fidelity Infrared Spin-to-Photon Interface

Isolated electron spins in silicon carbide with millisecond coherence times

artículo científico publicado en 2014

Kinetics and morphological stability in sublimation growth of 6H and 4H SiC epitaxial layers

Kinetics of residual doping in 4H-SiC epitaxial layers grown in vacuum

Large area mapping of the alloy composition of AlxGa1-xN using infrared reflectivity

article

Lateral enlargement of silicon carbide crystals

scholarly article by H. Jacobson et al published September 2004 in Journal of Crystal Growth

Layer-number determination in graphene on SiC by reflectance mapping

scholarly article in Carbon, vol. 77, October 2014

Ligand hyperfine interaction at the neutral silicon vacancy in 4H- and6H−SiC

scholarly article in Physical Review B, vol. 66 no. 15, October 2002

Liquid phase epitaxial growth of SiC

Long minority carrier lifetimes in 6H SiC grown by chemical vapor deposition

Luminescence from stacking faults in 4H SiC

Magnetic characterization of conductance electrons in GaN

Magnetic resonance identification of hydrogen at a zinc vacancy in ZnO

artículo científico publicado en 2013

Magnetic resonance studies of defects in electron-irradiated ZnO substrates

Magneto-optical spectroscopy of defects in wide bandgap semiconductors: GaN and SiC

Magnetron sputtering of epitaxial ZrB2thin films on 4H-SiC(0001) and Si(111)

Matching precursor kinetics to afford a more robust CVD chemistry: a case study of the C chemistry for silicon carbide using SiF4 as Si precursor

scholarly article by Pontus Stenberg et al published 2017 in Journal of Materials Chemistry C

Material characterization need for SiC-based devices

Mechanism of the configurational change of metastable defects in silicon

scientific article published on 01 July 1993

Metalorganic chemical vapor deposition growth of high-mobility AlGaN/AlN/GaN heterostructures on GaN templates and native GaN substrates

article

Metastable Defects in Low-Energy Electron Irradiated n -Type 4H-SiC

Metastable chalcogen-related luminescent centers in silicon

artículo científico publicado en 1994

Metastable defects in 6H–SiC: experiments and modeling

Mg-doped Al0.85Ga0.15N layers grown by hot-wall MOCVD with low resistivity at room temperature

Micro-Raman spectroscopy as a voltage probe in AlGaN/GaN heterostructure devices: Determination of buffer resistances

Micro-scribes in semi-insulating GaAs studied by cross-sectional transmission electron microscopy

article

Microhardness of 6H-SiC Epitaxial Layers Grown by Sublimation

Morphology Control of Hot-Wall MOCVD Selective Area Grown Hexagonal GaN Pyramids

Morphology Optimization of Very Thick 4H-SiC Epitaxial Layers

Morphology and polytype disturbances in sublimation growth of SiC epitaxial layers

article published in 1999

Multivalley spin splitting of1sstates for sulfur, selenium, and tellurium donors in silicon

scholarly article by H. G. Grimmeiss et al published 15 February 1982 in Physical Review B

Nature and occurrence of defects in 6H-SiC Lely crystals

Negative-U behavior of the Si donor in Al0.77Ga0.23N

Negative-USystem of Carbon Vacancy in4H-SiC

artículo científico publicado en 2012

Negative-Ucarbon vacancy in 4H-SiC: Assessment of charge correction schemes and identification of the negative carbon vacancy at the quasicubic site

scholarly article in Physical Review B, vol. 88 no. 23, December 2013

New photoluminescence lines in selenium-doped silicon

Nitrogen doping concentration as determined by photoluminescence in 4H– and 6H–SiC

Nitrogen doping of epitaxial silicon carbide

scholarly article by U Forsberg et al published March 2002 in Journal of Crystal Growth

Nitrogen impurity incorporation behavior in a chimney HTCVD process: pressure and temperature dependence

article published in 1999

Nitrogen incorporation during 4H-SiC epitaxy in a chimney CVD reactor

Observation of Bistable Defects in Electron Irradiated N-Type 4H-SiC

Observation of negative-U centers in 6H silicon carbide

scholarly article by C. G. Hemmingsson et al published 8 February 1999 in Applied Physics Letters

Observation of rapid direct charge transfer between deep defects in silicon

scientific article published on 01 May 1994

Observation of recombination enhanced defect annealing in 4H–SiC

Observation of the generation of stacking faults and active degradation measurements on off-axis and on-axis 4H-SiC PiN diodes

On the behavior of silicon donor in conductive AlxGa1-xN (0.63 ≤x≤ 1)

On the use of methane as a carbon precursor in Chemical Vapor Deposition of silicon carbide

scholarly article by M. Yazdanfar et al published March 2014 in Journal of Crystal Growth

On-Axis Homoepitaxial Growth of 4H-SiC PiN Structure for High Power Applications

On-axis homoepitaxial growth on Si-face 4H–SiC substrates

Optical Nuclear Spin Polarization of Divacancies in SiC

Optical Properties of the Niobium Centre in 4H, 6H, and 15R SiC

scholarly article published January 2013

Optical characterization of individual quantum dots

artículo científico publicado en 2012

Optical identification and electronic configuration of tungsten in 4H- and 6H-SiC

Optical selection rules for shallow donors in4H−SiCand ionization energy of the nitrogen donor at the hexagonal site

article by Ivan G. Ivanov et al published 30 April 2003 in Physical Review B

Optically detected cyclotron resonance investigations on4Hand6HSiC: Band-structure and transport properties

scholarly article in Physical Review B, vol. 61 no. 7, February 2000

Optically detected magnetic resonance studies of defects in 3C SiC epitaxial layers

Optically detected magnetic resonance studies of defects in electron-irradiated 3C SiC layers

scholarly article in Physical Review B, vol. 55 no. 5, February 1997

Optically detected magnetic resonance studies of intrinsic defects in 6H-SiC

Optically detected magnetic-resonance study of a metastable selenium-related center in silicon

scientific article published on 01 January 1995

Optimization of a Concentrated Chloride-Based CVD Process for 4H–SiC Epilayers

Oxidation Induced ON 1 , ON 2a/b Defects in 4H-SiC Characterized by DLTS

Passivation of p-type dopants in 4H-SiC by hydrogen

Performance of III-nitride epitaxy in a low V-to-III gas-flow ratio range under nitrogen ambient in a hot-wall MOCVD system

Phonon replicas at theMpoint in4H−SiC:A theoretical and experimental study

scholarly article in Physical Review B, vol. 58 no. 20, November 1998

Phosphorus-related luminescence in SiC

Photo-EPR Studies on Low-Energy Electron-Irradiated 4H-SiC

Photo-admittance spectroscopy

Photoexcitation-electron-paramagnetic-resonance studies of the carbon vacancy in 4H-SiC

Photoluminescence and Zeeman effect in chromium-doped 4H and 6H SiC

Photoluminescence determination of the nitrogen doping concentration in 6H‐SiC

Photoluminescence excitation spectra of the free exciton emission in 6H–SiC

Photoluminescence of 4H-SiC: some remarks

Photoluminescence of 8H-SiC

Photoluminescence of electron-irradiated4H−SiC

scholarly article in Physical Review B, vol. 59 no. 12, March 1999

Photoluminescence studies of porous silicon carbide

scholarly article by A. O. Konstantinov et al published 24 April 1995 in Applied Physics Letters

Photoluminescence upconversion in 4H–SiC

Polarized and diameter-dependent Raman scattering from individual aluminum nitride nanowires: The antenna and cavity effects

scholarly article by Hsu-Cheng Hsu et al published 17 September 2012 in Applied Physics Letters

Polytype stability in seeded sublimation growth of 4H–SiC boules

article published in 2000

Possibility for the electrical activation of the carbon antisite by hydrogen inSiC

scholarly article in Physical Review B, vol. 71 no. 3, January 2005

Possible lifetime‐limiting defect in 6H SiC

article by Nguyen Tien Son et al published 21 November 1994 in Applied Physics Letters

Precursors for carbon doping of GaN in chemical vapor deposition

article published in 2015

Predicted nitrogen doping concentrations in silicon carbide epitaxial layers grown by hot-wall chemical vapor deposition

scholarly article by Örjan Danielsson et al published April 2003 in Journal of Crystal Growth

Preferential etching of SiC crystals

Process stability and morphology optimization of very thick 4H–SiC epitaxial layers grown by chloride-based CVD

Prominent defects in semi-insulating SiC substrates

Properties and origins of different stacking faults that cause degradation in SiC PiN diodes

Properties of GaN layers grown on N-face free-standing GaN substrates

Properties of theD1bound exciton in4H−SiC

scholarly article in Physical Review B, vol. 59 no. 3, January 1999

Properties of two-dimensional electron gas in AlGaN/GaN HEMT structures determined by cavity-enhanced THz optical Hall effect

Pseudodonor electronic excited states of neutral complex defects in silicon

scientific article published on 01 October 1990

Pseudodonor nature of the DI defect in 4H-SiC

Publisher's Note: “Graphene self-switching diodes as zero-bias microwave detectors” [Appl. Phys. Lett. 106, 093116 (2015)]

article

Publisher’s Note: Divacancy in 4H-SiC [Phys. Rev. Lett.96, 055501 (2006)]

scientific article published in Physical Review Letters

Pulsed EPR studies of Phosphorus shallow donors in diamond and SiC

article by J. Isoya et al published April 2006 in Physica B

Purity and surface structure of thick 6H and 4H SiC layers grown by sublimation epitaxy

article published in 1999

Quantitative comparison between Z1∕2 center and carbon vacancy in 4H-SiC

Quasi-free-standing monolayer and bilayer graphene growth on homoepitaxial on-axis 4H-SiC(0 0 0 1) layers

article

Radial Variation of Measured Carrier Lifetimes in Epitaxial Layers Grown with Wafer Rotation

Radiation-induced defects in GaN

Radiation-induced defects in GaN bulk grown by halide vapor phase epitaxy

Recombination centers in as-grown and electron-irradiated ZnO substrates

Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layers

Reducing stress in silicon carbide epitaxial layers

scholarly article by Örjan Danielsson et al published May 2003 in Journal of Crystal Growth

Reduction of structural defects in thick 4H-SiC epitaxial layers grown on 4° off-axis substrates

Removal of polishing-induced damage from 6H-SiC(0001) substrates by hydrogen etching

Resonant ionization of shallow donors in electric field

article by Ivan G. Ivanov & Erik Janzén published 7 July 2014 in Physica Scripta

Revisiting the Thermochemical Database of Si-C-H System Related to SiC CVD Modeling

Role of screening in the density functional applied to transition-metal defects in semiconductors

scholarly article in Physical Review B, vol. 87 no. 20, May 2013

Room-temperature mobility above 2200 cm2/V·s of two-dimensional electron gas in a sharp-interface AlGaN/GaN heterostructure

S-Cu-related metastable complex defect in Si by optical detection of magnetic resonance

scientific article published on 01 September 1994

Scalable Quantum Photonics with Single Color Centers in Silicon Carbide

artículo científico publicado en 2017

Scalable Quantum Photonics with Single Color Centers in Silicon Carbide

scholarly article published 2017

Seeded sublimation growth of 6H and 4H–SiC crystals

Self-diffusion of 12C and 13C in intrinsic 4H–SiC

article published in 2004

Shallow P Donors in 3C-, 4H- and 6H-SiC

scholarly article published October 2006

Shallow donor and DX states of Si in AlN

article by Nguyen Tien Son et al published 28 February 2011 in Applied Physics Letters

Shallow excited states of deep luminescent centers in silicon

article by Mandeep Singh et al published February 1995 in Solid State Communications

Shortcomings of CVD modeling of SiC today

SiC Substrate effects on electron transport in the epitaxial graphene layer

SiC Varactors for Dynamic Load Modulation of High Power Amplifiers

SiC epitaxy growth using chloride-based CVD

SiC material for high-power applications

SiC power device passivation using porous SiC

SiC – a semiconductor for high-power, high-temperature and high-frequency devices

Silicon Antisite in4HSiC

artículo científico publicado en 2001

Silicon Chemistry in Fluorinated Chemical Vapor Deposition of Silicon Carbide

scholarly article by Pontus Stenberg et al published 30 January 2017 in Journal of Physical Chemistry C

Silicon and Oxygen in High-Al-Content AlGaN: Incorporation Kinetics and Electron Paramagnetic Resonance Study

Silicon carbide grown by liquid phase epitaxy in microgravity

scholarly article by R. Yakimova et al published July 1998 in Journal of Materials Research

Silicon in AlN: shallow donor and DX behaviors

article by Nguyen Tien Son et al published 19 May 2011 in Physica Status Solidi C: Current Topics in Solid State Physics

Silicon vacancy related defect in 4H and 6H SiC

scholarly article in Physical Review B, vol. 61 no. 4, January 2000

Silicon vacancy relatedTV2acenter in 4H-SiC

scholarly article in Physical Review B, vol. 68 no. 20, November 2003

Simulation of Gas-Phase Chemistry for Selected Carbon Precursors in Epitaxial Growth of SiC

Simulations of SiC CVD - Perspectives on the Need for Surface Reaction Model Improvements

Single Excitons in InGaN Quantum Dots on GaN Pyramid Arrays

artículo científico publicado en 2011

Site-occupying behavior of boron in compensated p-type 4H–SiC grown by sublimation epitaxy

Spin and photophysics of carbon-antisite vacancy defect in4Hsilicon carbide: A potential quantum bit

scholarly article in Physical Review B, vol. 91 no. 12, March 2015

Stable and metastable Si negative-U centers in AlGaN and AlN

Step-bunching in 6H-SiC growth by sublimation epitaxy

article by M Syväjärvi et al published 25 November 1999 in Journal of Physics: Condensed Matter

Step-bunching in SiC epitaxy: anisotropy and influence of growth temperature

article by M Syväjärvi et al published March 2002 in Journal of Crystal Growth

Stoichiometric, epitaxial ZrB2 thin films with low oxygen-content deposited by magnetron sputtering from a compound target: Effects of deposition temperature and sputtering power

article published in 2015

Strain and morphology compliance during the intentional doping of high-Al-content AlGaN layers

Stress related morphological defects in SiC epitaxial layers

Structural Investigation of Heteroepitaxial 3C-SiC Grown on 4H-SiC Substrates

Structural analysis of 4H-SiC layers grown on 6H-SiC and 15R-SiC substrates

Structural defects and deep-level centers in 4H-SiC epilayers grown by sublimational epitaxy in vacuum

Structural defects in electrically degraded 4H-SiC p+/n−/n+ diodes

Structural impact of LPE buffer layer on sublimation grown 4H–SiC epilayers

Structural investigation of SiC epitaxial layers grown under microgravity and on-ground conditions

Structural macro-defects in 6H-SiC wafers

Structural properties of 6H-SiC epilayers grown by two different techniques

Study of nitrogen, aluminium and boron incorporation in SiC layers grown by sublimation epitaxy

Sublimation epitaxy of AlN on SiC: growth morphology and structural features

Superior material properties of AlN on vicinal 4H-SiC

Surface Evolution of 4H-SiC(0001) during In Situ Surface Preparation and its Influence on Graphene Properties

Surface Preparation of 4° Off-Axis 4H-SiC Substrate for Epitaxial Growth

Tellurium donors in silicon

scholarly article by H. G. Grimmeiss et al published 15 October 1981 in Physical Review B

Temperature and doping dependence of the photon recycling effect in GaAs/AlGaAs heterostructures

Temperature dependence of the minority carrier lifetime in GaAs/AlGaAs double heterostructures

Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures

article

The 3838 Å photoluminescence line in 4H-SiC

The Carbon Vacancy Related EI4 Defect in 4H-SiC

The EI4 EPR centre in 6H SiC

The Silicon Vacancy in SiC

The charged exciton in an InGaN quantum dot on a GaN pyramid

The complex impact of silicon and oxygen on the n-type conductivity of high-Al-content AlGaN

The determination of high-density carrier plasma parameters in epitaxial layers, semi-insulating and heavily doped crystals of 4H-SiC by a picosecond four-wave mixing technique

The effect of grain size and phosphorous-doping of polycrystalline 3C–SiC on infrared reflectance spectra

The influence of growth conditions on carrier lifetime in 4H–SiC epilayers

The localisation of donor electrons in multivalley split 1s states for group V and VI donors in silicon

The material quality of CVD-grown SiC using different carbon precursors

The mechanism for cubic SiC formation on off-oriented substrates

The minority carrier lifetime of n‐type 4H‐ and 6H‐SiC epitaxial layers

The origin of 3C polytype inclusions in epitaxial layers of silicon carbide grown by chemical vapour deposition

scholarly article by C. Hallin et al published August 1997 in Diamond and Related Materials

The origin of a peak in the reststrahlen region of SiC

The silicon vacancy in SiC

Theoretical Investigation of the Single Photon Emitter Carbon Antisite-Vacancy Pair in 4H-SiC

Theoretical and electron paramagnetic resonance studies of hyperfine interaction in nitrogen doped 4H and 6H SiC

Theoretical model of dynamic spin polarization of nuclei coupled to paramagnetic point defects in diamond and silicon carbide ⬇️

scholarly article by Viktor Ivády et al published 18 September 2015 in Physical Review B

Theoretical study of small silicon clusters in4H−SiC

scholarly article in Physical Review B, vol. 76 no. 16, October 2007

Theoretical unification of hybrid-DFT andDFT + Umethods for the treatment of localized orbitals ⬇️

scholarly article in Physical Review B, vol. 90 no. 3, July 2014

Theory of Neutral Divacancy in SiC: A Defect for Spintronics

Theory of Spin-Conserving Excitation of theN−V−Center in Diamond

artículo científico publicado en 2009

Thermal conductivity of isotopically enriched silicon carbide

scholarly article published September 2013

Thermochemical Properties of Halides and Halohydrides of Silicon and Carbon

Thick Epilayer for Power Devices

Thick Silicon Carbide Homoepitaxial Layers Grown by CVD Techniques

scholarly article by Anne Henry et al published September 2006 in Chemical Vapor Deposition

Thick homoepitaxial layers grown on on-axis Si-face 6H- and 4H-SiC substrates with HCl addition

article

Thickness determination of low doped SiC epi-films on highly doped SiC substrates

Time Resolved Spectroscopy of Defects in SiC

Time-resolved photoluminescence properties of AlGaN/AlN/GaN high electron mobility transistor structures grown on 4H-SiC substrate

article

Time‐resolved decay of the blue emission in porous silicon

Titanium related luminescence in SiC

scholarly article by Anne Henry & Erik Janzén published October 2006 in Superlattices and Microstructures

Transition Metal Defects in Cubic and Hexagonal Polytypes of SiC: Site Selection, Magnetic and Optical Properties from Ab Initio Calculations

Trapped carrier electroluminescence (TraCE)—A novel method for correlating electrical and optical measurements

UD-3 defect in4H,6H,and15RSiC: Electronic structure and phonon coupling

scholarly article in Physical Review B, vol. 66 no. 11, September 2002

Uniform hot-wall MOCVD epitaxial growth of 2inch AlGaN/GaN HEMT structures

Using N2 as precursor gas in III-nitride CVD growth

Vector Magnetometry Using Silicon Vacancies in4H-SiC Under Ambient Conditions ⬇️

Very High Growth Rate of 4H-SiC Using MTS as Chloride-Based Precursor

Very high crystalline quality of thick 4H-SiC epilayers grown from methyltrichlorosilane (MTS)

Very high epitaxial growth rate of SiC using MTS as chloride-based precursor

Very high growth rate of 4H-SiC epilayers using the chlorinated precursor methyltrichlorosilane (MTS)

article published in 2007

Wafer warpage, crystal bending and interface properties of 4H-SiC epi-wafers

Zeeman spectroscopy of the D1 bound exciton in 3C–, and 4H–SiC

article by T Egilsson et al published December 1999 in Physica B

Zeeman spectroscopy of the neutral silicon vacancy in 6H and 4H SiC

article published in 1999

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