Filtros de búsqueda

Lista de obras de Mark Hopkinson

1.3 μm lasers with AlInAs-capped self-assembled quantum dots

1.3 [micro sign]m InAs/GaAs quantum-dot laser with low-threshold current density and negative characteristic temperature above room temperature

1.3 [micro sign]m InAs∕GaAs multilayer quantum-dot laser with extremely low room-temperature threshold current density

Adiabatic rapid passage on a single exciton

artículo científico publicado en 2011

All-optical switching in quantum cascade lasers

Anomalous Stark shifts in single vertically coupled pairs of InGaAs quantum dots

Atomic scale high-angle annular dark field STEM analysis of the N configuration in dilute nitrides of GaAs

scholarly article in Physical Review B, vol. 80 no. 12, September 2009

Band gap of ‘‘completely disordered’’ Ga0.52In0.48P

Beating of Exciton-Dressed States in a Single SemiconductorInGaAs/GaAsQuantum Dot

artículo científico publicado en 2009

Breakup of the conduction band structure of diluteGaAs1−yNyalloys

artículo científico publicado en 2005

Broadband 6μm<λ<8μm superluminescent quantum cascade light-emitting diodes

artículo científico publicado en 2006

CQED-Enhanced Single Photon Sources From InGaAs Quantum Dots

Carrier dynamics in short wavelength self-assembled InAs/Al0.6Ga0.4As quantum dots with indirect barriers

article published in 2003

Carrier lifetimes in type-II InAs quantum dots capped with a GaAsSb strain reducing layer

Cavity-enhanced polarization control and observation of off-resonant coupling in quantum dot nanocavities

Characterization of structure and defects in dot-in-well laser structures

article published in 2005

Charged and neutral exciton complexes in individual self-assembledIn(Ga)Asquantum dots

scholarly article in Physical Review B, vol. 63 no. 7, January 2001

Coherence function control of Quantum Dot Superluminescent Light Emitting Diodes by frequency selective optical feedback

artículo científico publicado en 2009

Coherent control of single quantum dot exciton embedded in a photodiode

article published in 2007

Coherent near-infrared wavelength conversion in semiconductor quantum cascade lasers

Coherent response of a quantum dot exciton driven by a rectangular spectrum optical pulse

scholarly article in Physical Review B, vol. 75 no. 11, March 2007

Comparative study of InGaAs quantum dot lasers with different degrees of dot layer confinement

Comparison of intraband absorption and photocurrent in InAs/GaAs quantum dots

Comparison of performance of GaAs-AlGaAs and InGaAs-AlInAs quantum cascade lasers

article by L.R. Wilson et al published 1999 in Electronics Letters

Composition fluctuations in GaInNAs multi-quantum wells

article

Composition modulation in GaInNAs quantum wells: Comparison of experiment and theory

article

Composition profiling at the atomic scale in III–V nanostructures by cross-sectional STM

article

Continuum transitions and phonon coupling in single self-assembled Stranski-Krastanow quantum dots

scholarly article in Physical Review B, vol. 68 no. 23, December 2003

Control of nuclear spin in InGaAs quantum dots

Control of polarization and mode mapping of small volume high Q micropillars

Control of polarized single quantum dot emission in high-quality-factor microcavity pillars

Controlled Rotation (C-ROT) Gate in a Single Self- Assembled Quantum Dot

Cracking self-assembled InAs quantum dots

Critical barrier thickness for the formation of InGaAs/GaAs quantum dots

Cryogenic confocal microscopy with rotation in a magnetic field

artículo científico publicado en 2010

Decreasing the emission wavelength of GaAs–AlGaAs quantum cascade lasers by the incorporation of ultrathin InGaAs layers

Defect states and commensurability in dual-periodAlxGa1−xAsphotonic crystal waveguides

scholarly article in Physical Review B, vol. 68 no. 3, July 2003

Determination of the shape and indium distribution of low-growth-rate InAs quantum dots by cross-sectional scanning tunneling microscopy

scholarly article by D. M. Bruls et al published 26 August 2002 in Applied Physics Letters

Dynamic nuclear polarization in InGaAs/GaAs and GaAs/AlGaAs quantum dots under nonresonant ultralow-power optical excitation

artículo científico publicado en 2013

Dynamical Band Gap Renormalization in Self-Organized InAs/GaAs Quantum Dots

Dynamics of stimulated emission in InAs quantum-dot laser structures measured in pump-probe experiments

artículo científico publicado en 2002

Effect of GaAs polycrystal on the size and areal density of InAs quantum dots in selective area molecular beam epitaxy

Effect of the electron population on intraband absorption in InAs/GaAs self-assembled quantum dots

Effect of the growth parameters on the structure and morphology of InAs/InGaAs/GaAs DWELL quantum dot structures

Effect of thermal annealing and strain engineering on the fine structure of quantum dot excitons

scholarly article in Physical Review B, vol. 70 no. 19, November 2004

Effects of alloy intermixing on the lateral confinement potential in InAs∕GaAs self-assembled quantum dots probed by intersublevel absorption spectroscopy

Electric-field-dependent carrier capture and escape in self-assembled InAs/GaAs quantum dots

Electrically pumped InGaAs quantum dot ring and cylindrical cavity lasers

Electronic Properties of InAs/GaAs Self-Assembled Quantum Dot Structures and Devices Studied by Photocurrent Spectroscopy

article published in 2000

Electronic band structure of AlGaInP grown by solid‐source molecular‐beam epitaxy

Electronic energy levels and energy relaxation mechanisms in self-organized InAs/GaAs quantum dots

scientific article published on 01 December 1996

Electronic properties of InAs/GaAs self-assembled quantum dots studied by photocurrent spectroscopy

Element-sensitive measurement of the hole–nuclear spin interaction in quantum dots

artículo científico publicado en 2012

Emission spectra and mode structure of InAs/GaAs self-organized quantum dot lasers

Engineering carrier confinement potentials in 1.3-μm InAs/GaAs quantum dots with InAlAs layers: Enhancement of the high-temperature photoluminescence intensity

Enhanced nonradiative Auger recombination in p-type modulation doped InAs/GaAs quantum dots

Enhanced phonon-assisted absorption in single InAs/GaAs quantum dots

scholarly article in Physical Review B, vol. 63 no. 16, April 2001

Enhanced photoluminescence intensity of 1.3-μm multi-layer InAs/InGaAs dots-in-well structure using the high growth temperature spacer layer step

Enhanced room-temperature quantum-dot effects in modulation-doped InAs/GaAs quantum dots

artículo científico publicado en 2009

Excitation and Relaxation Mechanisms in Single In(Ga)As Quantum Dots

artículo científico publicado en 2001

Excited States in Self-Assembled InAs/GaAs Quantum Dots under High Pressure

Excited states and selection rules in self-assembled InAs/GaAs quantum dots

scholarly article in Physical Review B, vol. 60 no. 4, July 1999

Exciton fine structure splitting in dot-in-a-well structures

Experiments Versus Modelling in Quantum Dot Pillar Microcavities

Fast Optical Preparation, Control, and Detection of a Single Hole Spin in a Quantum Dot

Fast Optical Preparation, Control, and Readout of a Single Quantum Dot Spin

scientific article published on 13 May 2008

Fast intraband capture and relaxation in InAs/GaAs self-assembled quantum dots

Few-second-long correlation times in a quantum dot nuclear spin bath probed by frequency-comb nuclear magnetic resonance spectroscopy ⬇️

Fine structure of charged and neutral excitons in InAs-Al0.6Ga0.4Asquantum dots

scholarly article in Physical Review B, vol. 66 no. 15, October 2002

Focused ion beam etching for the fabrication of micropillar microcavities made of III-V semiconductor materials

scholarly article

GaInNAs(Sb) surface normal devices

artículo científico publicado en 2008

GaInNAs-based Hellish-vertical cavity semiconductor optical amplifier for 1.3 μm operation.

artículo científico publicado en 2011

GaInP–AlGaInP band offsets determined from hydrostatic pressure measurements

Gain characteristics of InAs/GaAs self-organized quantum-dot lasers

Growth, Fabrication, and Operating Characteristics of Ultra-Low Threshold Current Density 1.3 µm Quantum Dot Lasers

High Q modes in elliptical microcavity pillars

High Q values and polarised emission from microcavity pillars with elliptical cross-section

High performance 1.3μm InAs/GaAs quantum dot lasers with low threshold current and negative characteristic temperature

artículo científico publicado en 2006

High performance 2.2 μm optically-pumped vertical external-cavity surface-emitting laser

artículo científico publicado en 2007

High power and very low noise operation at 1.3 and 1.5 μm with quantum dot and quantum dash Fabry-Perot lasers for microwave links

High pressure as a tool to tune electronic coupling in self-assembled quantum dot nanostructures

High sensitivity terahertz detector using two-dimensional electron gas absorber and tunnel junction contacts as a thermometer

High-Quality-Factor WG Modes in Semiconductor Microcavity Pillars with Circular and Elliptical Cross Section

High-performance three-layer 1.3-/spl mu/m InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents

Improved performance from GaAs–AlGaAs quantum cascade lasers with enhanced upper laser level confinement

article by P.T. Keightley et al published April 2000 in Physica E: Low-Dimensional Systems and Nanostructures

Improved performance of 1.3μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer

artículo científico publicado en 2004

Improved performance of In0.6Ga0.4As∕AlAs0.67Sb0.33∕InP quantum cascade lasers by introduction of AlAs barriers in the active regions

Improved temperature performance of 1.31-/spl mu/m quantum dot lasers by optimized ridge waveguide design

Improvement in the optical quality of GaInNAs/GaInAs quantum well structures by interfacial strain reduction

In situ control and monitoring of photonic device intermixing during laser irradiation.

artículo científico publicado en 2011

InAsP-based quantum wells as infrared pressure gauges for use in a diamond anvil cell

InAs–GaAs self-assembled quantum dot lasers: physical processes and device characteristics

InGaAs-AlAsSb quantum cascade lasers: towards 3 μm emission

InGaAs∕AlAsSb∕InP quantum cascade lasers operating at wavelengths close to 3μm

artículo científico publicado en 2007

InGaAs∕AlAsSb∕InP strain compensated quantum cascade lasers

Individual neutral and chargedInxGa1−xAs−GaAsquantum dots with strong in-plane optical anisotropy

scholarly article in Physical Review B, vol. 72 no. 16, October 2005

Influence of structure and defects on the performance of dot-in-well laser structures

Influences of the spacer layer growth temperature on multilayer InAs∕GaAs quantum dot structures

artículo científico publicado en 2004

Intensity noise in quantum-dot laser diodes

Intersublevel polaron dephasing in self-assembled quantum dots

scholarly article in Physical Review B, vol. 77 no. 4, January 2008

Intraband magnetospectroscopy of singly and doubly chargedn-type self-assembled quantum dots

scholarly article in Physical Review B, vol. 74 no. 16, October 2006

Intraband relaxation via polaron decay in InAs self-assembled quantum dots

scholarly article in Physical Review B, vol. 70 no. 16, October 2004

Inversion of electron sub-band population in a GaAs/AlGaAs triple barrier tunnelling structure

article by Y.B. Li et al published July 1998 in Solid-State Electronics

Inverted Electron-Hole Alignment in InAs-GaAs Self-Assembled Quantum Dots

artículo científico publicado en 2000

Investigations of 1.55-μm GaInNAs/GaAs heterostructures by optical spectroscopy

artículo científico publicado en 2004

Kinetic considerations on the phase separation of GaInNAs quantum wells

Laser Location and Manipulation of a Single Quantum Tunneling Channel in an InAs Quantum Dot

artículo científico publicado en 2012

Lasing and spontaneous emission characteristics of 1.3μm In(Ga)As quantum-dot lasers

Long nuclear spin polarization decay times controlled by optical pumping in individual quantum dots

scholarly article in Physical Review B, vol. 77 no. 12, March 2008

Long-wavelength light emission and lasing from InAs∕GaAs quantum dots covered by a GaAsSb strain-reducing layer

Low threshold current density and negative characteristic temperature 1.3μm InAs self-assembled quantum dot lasers

Magneto-optical spectroscopy of InAs/GaAs self-organised quantum dots

Magneto-optical studies of self-organized InAs/GaAs quantum dots

scholarly article in Physical Review B, vol. 57 no. 4, January 1998

Magnetotunneling Spectroscopy of Dilute Ga(AsN) Quantum Wells

artículo científico publicado en 2003

Measurement of the direct energy gap ofAl0.5In0.5P: Implications for the band discontinuity atGa1−xInxP/AlyIn1−yP heterojunctions

artículo científico publicado en 1994

Mechanism for improvements of optical properties of 1.3-μm InAs∕GaAs quantum dots by a combined InAlAs–InGaAs cap layer

artículo científico publicado en 2005

Mid-infrared intersubband electroluminescence from a single-period GaAs/AlGaAs triple barrier structure

article by Y. B. Li et al published 27 April 1998 in Applied Physics Letters

Mobility and saturation drift velocity enhancement in highly doped GaAs and InxGa1–xAs structures designed for use in power FET devices

article

Modal gain and lasing states in InAs/GaAs self-organized quantum dot lasers

Mode structure of the L3 photonic crystal cavity

Modes of the L3 defect cavity in InAs quantum dot photonic crystals

Nature of the Stranski-Krastanow Transition during Epitaxy of InGaAs on GaAs

artículo científico publicado en 2001

Nuclear Spin Switch in Semiconductor Quantum Dots

artículo científico publicado en 2007

Nuclear spin pumping under resonant optical excitation in a quantum dot

Observation of Wannier-Stark ladder transitions inInxGa1−xAs-GaAs piezoelectric superlattices

scientific article published on 01 November 1995

Observation of in-plane polarized intersublevel absorption in strongly coupled InGaAs/GaAs self assembled quantum dots

artículo científico publicado en 2003

Observation of multicharged excitons and biexcitons in a single InGaAs quantum dot

scholarly article in Physical Review B, vol. 63 no. 16, April 2001

Observation of ultrahigh quality factor in a semiconductor microcavity

Optical Spectroscopic Study of Carrier Processes in Self-Assembled In(Ga)As-Ga(Al)As Quantum Dot Lasers

Optical orientation and control of spin memory in individual InGaAs quantum dots

scholarly article in Physical Review B, vol. 72 no. 7, August 2005

Optical spectroscopic determination of the electronic band structure of bulk AlGaInP and GaInP-AlGaInP heterojunction band offsets

Optical spectroscopic observation of spontaneous long range ordering in AlGaInP

Optical spectroscopy of AlGaInP based wide band gap quantum wells

Optimizing the growth of 1.3 μm InAs/InGaAs dots-in-a-well structure

Optimizing the growth of 1.3-μm InAs/InGaAs dots-in-a-well structure: Achievement of high-performance laser

artículo científico publicado en 2005

Photocurrent Spectroscopy of InAs/GaAs Self-Assembled Quantum Dots

Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots

scholarly article in Physical Review B, vol. 62 no. 24, December 2000

Photoluminescence decay time measurements from self-organized InAs/GaAs quantum dots

Photoluminescence of InNAs alloys: S-shaped temperature dependence and conduction-band nonparabolicity

scholarly article in Physical Review B, vol. 76 no. 7, August 2007

Photoluminescence spectroscopy of bandgap reduction in dilute InNAs alloys

Photoluminescence spectroscopy of intersubband population inversion in aGaAs/AlxGa1−xAstriple-barrier tunneling structure

article by Y. B. Li et al published 15 March 1998 in Physical Review B

Photoluminescence, photoluminescence excitation, and resonant Raman spectroscopy of disordered and ordered Ga0.52In0.48P

Polarisation control and emission enhancement of a quantum dot in ultra-high finesse microcavity pillars

Polarization-resolved resonant fluorescence of a single semiconductor quantum dot

Polarized quantum dot emission from photonic crystal nanocavities studied under moderesonant enhanced excitation

artículo científico publicado en 2007

Polaron decay and inter-level transfer in InAs/GaAs self-assembled quantum dots

Population Inversion in a Single InGaAs Quantum Dot Using the Method of Adiabatic Rapid Passage

artículo científico publicado en 2011

Precise measurement of the fraction of charged dots in self-assembled quantum dot ensembles using ultrafast pump-probe techniques

Quantum Confined Stark Effect and Permanent Dipole Moment of InAs–GaAs Self-Assembled Quantum Dots

Quantum dot dipole orientation and excitation efficiency of micropillar modes

artículo científico publicado en 2008

Quantum key distribution system in standard telecommunications fiber using a short wavelength single photon source

scholarly article by R. J. Collins et al published April 2010 in Journal of Applied Physics

Quantum-confined Stark shifts of charged exciton complexes in quantum dots

scholarly article in Physical Review B, vol. 70 no. 20, November 2004

Quantum-dots in micro-pillar micro-cavities: experiment and theory

Recent progress in short wavelength quantum cascade lasers

Recombination of Many-Particle States in InAs Self-Organized Quantum Dots

Relaxation study of AlGaAs cladding layers in InGaAs/GaAs (111)B lasers designed for 1.0–1.1μm operation

Role of elastic anisotropy in the vertical alignment of In(Ga)As quantum dot superlattices

Room-temperature 1.6μm light emission from InAs∕GaAs quantum dots with a thin GaAsSb cap layer

Room-temperature broadband emission of an InGaAs/GaAs quantum dots laser.

artículo científico publicado en 2007

Self-assembled InAs quantum dots within a vertical cavity structure for all-optical switching devices

Short Wavelength InP Based Quantum Cascade Lasers

Short-wavelength quantum cascade lasers

article published in 2008

Single photon sources based upon single quantum dots in semiconductor microcavity pillars

Site-Controlled Single-Photon Emitters Fabricated by Near-Field Illumination.

artículo científico publicado en 2018

Size, areal density and emission energy control of InAs self assemble quantum dots grown on GaAs by selective area molecular beam epitaxy

Solid‐source molecular beam epitaxy growth of GaInP and GaInP‐containing quantum wells

Spinodal decomposition in GaInNAs/GaAs multi-quantum wells

Stacked low-growth-rate InAs quantum dots studied at the atomic level by cross-sectional scanning tunneling microscopy

Stark shift of the spectral response in quantum dots-in-a-well infrared photodetectors

Strain interactions and defect formation in stacked InGaAs quantum dot and dot-in-well structures

Strain-induced quantum confinement of electron gases

artículo científico publicado en 1998

Strong Effect of Resonant Impurities on Landau-Level Quantization

artículo científico publicado en 2006

Strong in-plane polarized intraband absorption in vertically aligned InGaAs/GaAs quantum dots

artículo científico publicado en 2003

Structural analysis of strained quantum dots using nuclear magnetic resonance

article

Structural and optical properties of high In and N content GaInNAs quantum wells

Structural and optical studies of vertically aligned InAs/GaAs self-assembled quantum dots

Structural defects characterisation of GaInNAs MQWs by TEM and PL

article published in 2004

Submilliwatt optical bistability in a coated InGaAs/InP multiquantum well waveguide Fabry–Perot cavity

Suppression of nuclear spin bath fluctuations in self-assembled quantum dots induced by inhomogeneous strain ⬇️

artículo científico publicado en 2015

Surface Band-Gap Narrowing in Quantized Electron Accumulation Layers

artículo científico publicado en 2010

Systematic study of the effects of δ-p-doping on 1.3μm dot-in-well lasers

Tailoring the electrical conductivity of GaAs by nitrogen incorporation.

artículo científico publicado en 2009

Temperature-induced carrier escape processes studied in absorption of individualInxGa1−xAsquantum dots

scholarly article in Physical Review B, vol. 69 no. 15, April 2004

The control of size and areal density of InAs self-assembled quantum dots in selective area molecular beam epitaxy on GaAs (001) surface

The polaronic nature of intraband relaxation in InAs/GaAs self-assembled quantum dots

The role of climb and glide in misfit relief of InGaAs/GaAs(111)B heterostructures

Time-resolved photoluminescence measurements of InAs self-assembled quantum dots (Invited Paper)

article

Towards coherent optical control of a single hole spin: Rabi rotation of a trion conditional on the spin state of the hole

Tuning of electronic coupling between self-assembled quantum dots

Two-qubit conditional quantum-logic operation in a single self-assembled quantum dot

scholarly article in Physical Review B, vol. 78 no. 7, August 2008

Unfaulting of dislocation loops in the GaInNAs alloy: An estimation of the stacking fault energy

Voltage enhancement in quantum well solar cells

Voltage-controlled nuclear polarization switching in a singleInxGa1−xAsquantum dot

scholarly article in Physical Review B, vol. 79 no. 12, March 2009

Wannier-Stark ladder spectra in InxGa1−xAsGaAs strained layer piezo-electric superlattices

article by D.W. Peggs et al published January 1996 in Solid-State Electronics

Whispering gallery modes in quantum dot micropillar cavities

Whispering gallery resonances in semiconductor micropillars

p-doped 1.3μm InAs∕GaAs quantum-dot laser with a low threshold current density and high differential efficiency

λ∼3.1 μm room temperature InGaAs/AlAsSb/InP quantum cascade lasers

Dominio Público Uruguay está sostenido por:

Acerca de Dominio Público Uruguay

Ayuda