Filtros de búsqueda

Lista de obras de Anne Henry

3C-SiC Heteroepitaxy on Hexagonal SiC Substrates

4H-SiC Epitaxial Layers Grown on On-Axis Si-Face Substrate

A 3 kV Schottky barrier diode in 4H-SiC

A 4.5 kV 6H silicon carbide rectifier

scholarly article by Olof Kordina et al published 11 September 1995 in Applied Physics Letters

A SiC Varactor With Large Effective Tuning Range for Microwave Power Applications

Acceptor incorporation in SiC epilayers grown at high growth rate with chloride-based CVD

Annealing behavior of the EB-centers and M-center in low-energy electron irradiated n-type 4H-SiC

Bistable defects in low-energy electron irradiated n-type 4H-SiC

article published in 2010

Boron-related luminescence in SiC

CVD Growth of 3C-SiC on 4H-SiC Substrate

CVD Heteroepitaxial Growth of 3C-SiC on 4H-SiC (0001) Substrates

Capacitance transient study of a bistable deep level in e−-irradiated n-type 4H–SiC

Carrot Defect Control in Chloride-Based CVD through Optimized Ramp up Conditions

Cathodoluminescence identification of donor–acceptor related emissions in as-grown 4H–SiC layers

Chloride Based CVD of 3C-SiC on (0001) α-SiC Substrates

Chloride-Based CVD Growth of Silicon Carbide for Electronic Applications

scholarly article by Henrik Pedersen et al published 2 December 2011 in Chemical Reviews

Chloride-Based CVD at High Growth Rates on 3” Vicinal Off-Angles SiC Wafers

Chloride-Based CVD at High Rates of 4H-SiC on On-Axis Si-Face Substrates

Chloride-Based CVD of 4H-SiC at High Growth Rates on Substrates with Different Off-Angles

article published in 2012

Chloride-Based SiC Epitaxial Growth

Chloride-Based SiC Epitaxial Growth toward Low Temperature Bulk Growth

Chloride-based CVD of 3C-SiC epitaxial layers on 6H(0001) SiC

Chlorinated precursor study in low temperature chemical vapor deposition of 4H-SiC

Concentrated Chloride-Based Epitaxial Growth of 4H-SiC

Deep levels created by low energy electron irradiation in 4H-SiC

Deep levels in iron doped n- and p-type 4H-SiC

Deep levels in tungsten doped n-type 3C–SiC

Defects in 4H-SiC Layers Grown by Chloride-Based Epitaxy

Defects in low-energy electron-irradiated n-type 4H-SiC

Donor incorporation in SiC epilayers grown at high growth rate with chloride-based CVD

article published in 2009

Donor-Acceptor Pair Luminescence of P-Al and N-Al Pairs in 3C-SiC and the Ionization Energy of the P Donor

Doping-induced strain in N-doped 4H–SiC crystals

Dynamics of the nitrogen-bound excitons in 6HSiC

article

EPR and ENDOR Studies of Shallow Donors in SiC

article by Nguyen Tien Son et al published 26 May 2010 in Applied Magnetic Resonance

Effects of phosphorous-doping and high temperature annealing on CVD grown 3C-SiC

Electron paramagnetic resonance and theoretical studies of shallow phosphorous centers in3C-,4H-, and6H−SiC

article by Nguyen Tien Son et al published 1 February 2006 in Physical Review B

Electronic Configuration of Tungsten in 4H-, 6H-, and 15R-SiC

Electrothermal actuation of silicon carbide ring resonators

scholarly article by Enrico Mastropaolo et al published 2009 in Journal of Vacuum Science & Technology B

Epitaxial CVD growth of sp2-hybridized boron nitride using aluminum nitride as buffer layer

scholarly article by Mikhail Chubarov et al published 10 October 2011 in Physica Status Solidi

Epitaxial growth of 4H SiC in a vertical hot-wall CVD reactor: Comparison between up- and down-flow orientations

Epitaxial growth of SiC with chlorinated precursors on different off-angle substrates

Excitation properties of hydrogen-related photoluminescence in6H−SiC

scholarly article in Physical Review B, vol. 62 no. 11, September 2000

Excitation spectra of nitrogen bound excitons in 4H- and 6H-SiC

Fabrication and properties of high-resistivity porous silicon carbide for SiC power device passivation

scholarly article by A.O. Konstantinov et al published January 1995 in Materials Science and Engineering B: Advanced Functional Solid-state Materials

Fabrication of beam resonators from hot-wall chemical vapour deposited SiC

Ga-bound excitons in 3C-, 4H-, and 6H-SiC

artículo científico publicado en 1996

Gas-Phase Modeling of Chlorine-Based Chemical Vapor Deposition of Silicon Carbide

scholarly article by Stefano Leone et al published 8 March 2012 in Crystal Growth & Design

Growth and Photoluminescence Study of Aluminium Doped SiC Epitaxial Layers

Growth and Properties of SiC On-Axis Homoepitaxial Layers

Growth characteristics of SiC in a hot-wall CVD reactor with rotation

article published in 2002

Growth characteristics of chloride-based SiC epitaxial growth

Growth of 3CSiC on on-axis Si(100) substrates by chemical vapor deposition

Growth of 4H-SiC Epitaxial Layers on 4° Off-Axis Si-Face Substrates

Growth of 6H and 4H–SiC by sublimation epitaxy

Growth of High Quality Epitaxial Rhombohedral Boron Nitride

Growth of Thick 4H-SiC Epitaxial Layers on On-Axis Si-Face Substrates with HCl Addition

article

Growth of high‐quality 3C‐SiC epitaxial films on off‐axis Si(001) substrates at 850 °C by reactive magnetron sputtering

Growth of smooth 4H-SiC epilayers on 4° off-axis substrates with chloride-based CVD at very high growth rate

Growth rate predictions of chemical vapor deposited silicon carbide epitaxial layers

scholarly article by Örjan Danielsson et al published August 2002 in Journal of Crystal Growth

High Growth Rate of 4H-SiC Epilayers on On-Axis Substrates with Different Chlorinated Precursors

High Growth Rate with Reduced Surface Roughness during On-Axis Homoepitaxial Growth of 4H-SiC

High quality 4H-SiC grown on various substrate orientations

High quality 4H‐SiC epitaxial layers grown by chemical vapor deposition

High temperature CVD growth of SiC

High temperature chemical vapor deposition of SiC

Homo-Epitaxial Growth on Low-Angle Off Cut 4H-SiC Substrate

article published in 2014

Homoepitaxial Growth of 4H-SiC on On-Axis Si-Face Substrates Using Chloride-Based CVD

Impact of dielectric parameters on the reflectivity of 3C–SiC wafers with a rough surface morphology in the reststrahlen region

Improved morphology for epitaxial growth on 4° off-axis 4H-SiC substrates

In-situ surface preparation of nominally on-axis 4H-SiC substrates

Influence of epitaxial growth and substrate-induced defects on the breakdown of 4H–SiC Schottky diodes

Investigation of the temperature profile in a hot-wall SiC chemical vapor deposition reactor

article by Örjan Danielsson et al published February 2002 in Journal of Crystal Growth

Ionization energy of the phosphorus donor in 3C–SiC from the donor-acceptor pair emission

Large area mapping of the alloy composition of AlxGa1-xN using infrared reflectivity

article

Lateral enlargement of silicon carbide crystals

scholarly article by H. Jacobson et al published September 2004 in Journal of Crystal Growth

Long minority carrier lifetimes in 6H SiC grown by chemical vapor deposition

Low Temperature CVD of Thin, Amorphous Boron-Carbon Films for Neutron Detectors

Material characterization need for SiC-based devices

Mechanism of the configurational change of metastable defects in silicon

scientific article published on 01 July 1993

Mercury-related luminescent center in silicon

scientific article published on 01 May 1993

Metastable Defects in Low-Energy Electron Irradiated n -Type 4H-SiC

Metastable chalcogen-related luminescent centers in silicon

artículo científico publicado en 1994

New photoluminescence lines in selenium-doped silicon

Nitrogen doping concentration as determined by photoluminescence in 4H– and 6H–SiC

Nitrogen incorporation during 4H-SiC epitaxy in a chimney CVD reactor

Observation of Bistable Defects in Electron Irradiated N-Type 4H-SiC

Observation of the generation of stacking faults and active degradation measurements on off-axis and on-axis 4H-SiC PiN diodes

On the effect of silicon in CVD of sp2hybridized boron nitride thin films

article published in 2013

On the effect of water and oxygen in chemical vapor deposition of boron nitride

On-axis homoepitaxial growth on Si-face 4H–SiC substrates

Optical Properties of the Niobium Centre in 4H, 6H, and 15R SiC

scholarly article published January 2013

Optical identification and electronic configuration of tungsten in 4H- and 6H-SiC

Optically detected magnetic-resonance study of a metastable selenium-related center in silicon

scientific article published on 01 January 1995

Optimization of a Concentrated Chloride-Based CVD Process for 4H–SiC Epilayers

Phonon replicas at theMpoint in4H−SiC:A theoretical and experimental study

scholarly article in Physical Review B, vol. 58 no. 20, November 1998

Photoluminescence determination of the nitrogen doping concentration in 6H‐SiC

Photoluminescence of 4H-SiC: some remarks

Photoluminescence of 8H-SiC

Photoluminescence of electron-irradiated4H−SiC

scholarly article in Physical Review B, vol. 59 no. 12, March 1999

Photoluminescence of the two-dimensional hole gas in p-type delta -doped Si layers

artículo científico publicado en 1996

Photoluminescence studies of porous silicon carbide

scholarly article by A. O. Konstantinov et al published 24 April 1995 in Applied Physics Letters

Properties of theD1bound exciton in4H−SiC

scholarly article in Physical Review B, vol. 59 no. 3, January 1999

Pseudodonor nature of the DI defect in 4H-SiC

Pulsed EPR studies of Phosphorus shallow donors in diamond and SiC

article by J. Isoya et al published April 2006 in Physica B

Purity and surface structure of thick 6H and 4H SiC layers grown by sublimation epitaxy

article published in 1999

S-Cu-related metastable complex defect in Si by optical detection of magnetic resonance

scientific article published on 01 September 1994

Shallow P Donors in 3C-, 4H- and 6H-SiC

scholarly article published October 2006

SiC Varactors for Dynamic Load Modulation of High Power Amplifiers

SiC epitaxy growth using chloride-based CVD

Structural Investigation of Heteroepitaxial 3C-SiC Grown on 4H-SiC Substrates

Surface Preparation of 4° Off-Axis 4H-SiC Substrate for Epitaxial Growth

The 3838 Å photoluminescence line in 4H-SiC

The effect of grain size and phosphorous-doping of polycrystalline 3C–SiC on infrared reflectance spectra

The material quality of CVD-grown SiC using different carbon precursors

The origin of a peak in the reststrahlen region of SiC

Thick Epilayer for Power Devices

Thick Silicon Carbide Homoepitaxial Layers Grown by CVD Techniques

scholarly article by Anne Henry et al published September 2006 in Chemical Vapor Deposition

Thick homoepitaxial layers grown on on-axis Si-face 6H- and 4H-SiC substrates with HCl addition

article

Thickness determination of low doped SiC epi-films on highly doped SiC substrates

Time‐resolved decay of the blue emission in porous silicon

Titanium related luminescence in SiC

scholarly article by Anne Henry & Erik Janzén published October 2006 in Superlattices and Microstructures

Very High Growth Rate of 4H-SiC Using MTS as Chloride-Based Precursor

Very high crystalline quality of thick 4H-SiC epilayers grown from methyltrichlorosilane (MTS)

Very high epitaxial growth rate of SiC using MTS as chloride-based precursor

Very high growth rate of 4H-SiC epilayers using the chlorinated precursor methyltrichlorosilane (MTS)

article published in 2007

Wafer warpage, crystal bending and interface properties of 4H-SiC epi-wafers

Dominio Público Uruguay está sostenido por:

Acerca de Dominio Público Uruguay

Ayuda