2.5 kV ion-implanted p+ n diodes in 6H-SiC

A 4.5 kV 6H silicon carbide rectifier

scholarly article by Olof Kordina et al published 11 September 1995 in Applied Physics Letters

Ab Initio Study of Growth Mechanism of 4H–SiC: Adsorption and Surface Reaction of C2H2, C2H4, CH4, and CH3

Brominated Chemistry for Chemical Vapor Deposition of Electronic Grade SiC

CVD Growth of 3C-SiC on 4H-SiC Substrate

CVD Heteroepitaxial Growth of 3C-SiC on 4H-SiC (0001) Substrates

Capacitance transient studies of electron irradiated 4H-SiC

Capture cross sections of electron irradiation induced defects in 6H–SiC

Carrier Lifetime Controlling Defects Z1/2 and RB1 in Standard and Chlorinated Chemistry Grown 4H-SiC

Carrot Defect Control in Chloride-Based CVD through Optimized Ramp up Conditions

Chloride Based CVD of 3C-SiC on (0001) α-SiC Substrates

Chloride-Based CVD Growth of Silicon Carbide for Electronic Applications

scholarly article by Henrik Pedersen et al published 2 December 2011 in Chemical Reviews

Chloride-Based CVD at High Growth Rates on 3” Vicinal Off-Angles SiC Wafers

Chloride-Based CVD at High Rates of 4H-SiC on On-Axis Si-Face Substrates

Chloride-Based CVD of 4H-SiC at High Growth Rates on Substrates with Different Off-Angles

article published in 2012

Chloride-Based SiC Epitaxial Growth toward Low Temperature Bulk Growth

Chloride-based CVD of 3C-SiC epitaxial layers on 6H(0001) SiC

Chlorinated precursor study in low temperature chemical vapor deposition of 4H-SiC

Concentrated Chloride-Based Epitaxial Growth of 4H-SiC

Configuration transformation of metastable defects in 6H-SiC

Deep level defects in electron-irradiated 4H SiC epitaxial layers

Deep levels in as-grown and electron-irradiated n-type GaN studied by deep level transient spectroscopy and minority carrier transient spectroscopy

Deep luminescent centres in electron-irradiated 6H SiC

Dominant recombination center in electron‐irradiated 3CSiC

Effect of Process Parameters on Dislocation Density in Thick 4H-SiC Epitaxial Layers Grown by Chloride-Based CVD on 4° Off-Axis Substrates

Effect of vapor composition on polytype homogeneity of epitaxial silicon carbide

article

Effects of microwave fields on recombination processes in 4H and 6H SiC

Electron Paramagnetic Resonance Studies of Nb in 6H-SiC

article published in 2013

Electron effective masses and mobilities in high‐purity 6H–SiC chemical vapor deposition layers

article

Electron effective masses in 4H SiC

Electron paramagnetic resonance and theoretical studies of Nb in 4H- and 6H-SiC

Fast Growth Rate Epitaxy on 4° Off-Cut 4-Inch Diameter 4H-SiC Wafers

Fast chemical sensing with metal-insulator silicon carbide structures

scholarly article by P. Tobias et al published June 1997 in IEEE Electron Device Letters

Finding the Optimum Chloride-Based Chemistry for Chemical Vapor Deposition of SiC

article published in 2014

Gas-Phase Modeling of Chlorine-Based Chemical Vapor Deposition of Silicon Carbide

scholarly article by Stefano Leone et al published 8 March 2012 in Crystal Growth & Design

Growth Mechanism of SiC Chemical Vapor Deposition: Adsorption and Surface Reactions of Active Si Species

Growth characteristics of SiC in a hot-wall CVD reactor with rotation

article published in 2002

Growth of 3CSiC on on-axis Si(100) substrates by chemical vapor deposition

Growth of 4H-SiC Epitaxial Layers on 4° Off-Axis Si-Face Substrates

Growth of SiC by ?Hot-Wall? CVD and HTCVD

Growth of Thick 4H-SiC Epitaxial Layers on On-Axis Si-Face Substrates with HCl Addition

article

Growth of smooth 4H-SiC epilayers on 4° off-axis substrates with chloride-based CVD at very high growth rate

High Growth Rate of 4H-SiC Epilayers on On-Axis Substrates with Different Chlorinated Precursors

High quality 4H-SiC grown on various substrate orientations

High quality 4H‐SiC epitaxial layers grown by chemical vapor deposition

High temperature chemical vapor deposition of SiC

High-Resolution Raman and Luminescence Spectroscopy of Isotope-Pure 28 Si 12 C, Natural and 13 C – Enriched 4H-SiC

Homoepitaxial Growth of 4H-SiC on On-Axis Si-Face Substrates Using Chloride-Based CVD

Identification of Niobium in 4H-SiC by EPR and Ab Initio Studies

scholarly article published May 2012

Important role of shallow impurities in carrier recombination in SiC

article by W.M Chen et al published February 1995 in Solid State Communications

Improved morphology for epitaxial growth on 4° off-axis 4H-SiC substrates

Impurity concentration determination in 6H-SiC

In situ substrate preparation for high-quality SiC chemical vapour deposition

Long minority carrier lifetimes in 6H SiC grown by chemical vapor deposition

Metastable defects in 6H–SiC: experiments and modeling

Morphology Optimization of Very Thick 4H-SiC Epitaxial Layers

Nitrogen doping concentration as determined by photoluminescence in 4H– and 6H–SiC

On the use of methane as a carbon precursor in Chemical Vapor Deposition of silicon carbide

scholarly article by M. Yazdanfar et al published March 2014 in Journal of Crystal Growth

Optical Properties of the Niobium Centre in 4H, 6H, and 15R SiC

scholarly article published January 2013

Optically detected magnetic resonance studies of defects in 3C SiC epitaxial layers

Optically detected magnetic resonance studies of defects in electron-irradiated 3C SiC layers

scholarly article in Physical Review B, vol. 55 no. 5, February 1997

Optimization of a Concentrated Chloride-Based CVD Process for 4H–SiC Epilayers

Phonon replicas at theMpoint in4H−SiC:A theoretical and experimental study

scholarly article in Physical Review B, vol. 58 no. 20, November 1998

Photoluminescence determination of the nitrogen doping concentration in 6H‐SiC

Possible lifetime‐limiting defect in 6H SiC

article by Nguyen Tien Son et al published 21 November 1994 in Applied Physics Letters

Process stability and morphology optimization of very thick 4H–SiC epitaxial layers grown by chloride-based CVD

Reduction of structural defects in thick 4H-SiC epitaxial layers grown on 4° off-axis substrates

Revisiting the Thermochemical Database of Si-C-H System Related to SiC CVD Modeling

Shortcomings of CVD modeling of SiC today

SiC epitaxy growth using chloride-based CVD

SiC material for high-power applications

SiC – a semiconductor for high-power, high-temperature and high-frequency devices

Silicon Chemistry in Fluorinated Chemical Vapor Deposition of Silicon Carbide

scholarly article by Pontus Stenberg et al published 30 January 2017 in Journal of Physical Chemistry C

Silicon vacancy related defect in 4H and 6H SiC

scholarly article in Physical Review B, vol. 61 no. 4, January 2000

Simulation of Gas-Phase Chemistry for Selected Carbon Precursors in Epitaxial Growth of SiC

Simulations of SiC CVD - Perspectives on the Need for Surface Reaction Model Improvements

Surface Preparation of 4° Off-Axis 4H-SiC Substrate for Epitaxial Growth

The material quality of CVD-grown SiC using different carbon precursors

The mechanism for cubic SiC formation on off-oriented substrates

The minority carrier lifetime of n‐type 4H‐ and 6H‐SiC epitaxial layers

The origin of 3C polytype inclusions in epitaxial layers of silicon carbide grown by chemical vapour deposition

scholarly article by C. Hallin et al published August 1997 in Diamond and Related Materials

Thermal conductivity of isotopically enriched silicon carbide

scholarly article published September 2013

Thermochemical Properties of Halides and Halohydrides of Silicon and Carbon

Thick homoepitaxial layers grown on on-axis Si-face 6H- and 4H-SiC substrates with HCl addition

article

Time Resolved Spectroscopy of Defects in SiC

Time‐resolved decay of the blue emission in porous silicon

Vector Magnetometry Using Silicon Vacancies in4H-SiC Under Ambient Conditions ⬇️

Wafer warpage, crystal bending and interface properties of 4H-SiC epi-wafers