A Complex Defect Related to the Carbon Vacancy in 4H and 6H SiC

A spectroscopic study of a metastable defect in silicon

All-optical characterization of carrier lifetimes and diffusion lengths in MOCVD-, ELO-, and HVPE- grown GaN

Application of picosecond four-wave mixing and photoluminescence techniques for investigation of carrier dynamics in bulk crystals and heterostructures of GaN

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Carbon-vacancy related defects in 4H- and 6H-SiC

Carrier and exciton dynamics in In 0.15 Ga 0.85 NGaN multiple quantum well structures

Characteristics of Si d-Layers Embedded in GaAs

Characterization of mass-transport grown GaN by hydride vapour-phase epitaxy

Contribution of dislocations to carrier recombination and transport in highly excited ELO and HVPE GaN layers

Correlation between switching to n-type conductivity and structural defects in highly Mg-doped InN

Crystal phase engineered quantum wells in ZnO nanowires

artículo científico publicado en 2013

Deep luminescent centres in electron-irradiated 6H SiC

Defect related issues in the “current roll-off” in InGaN based light emitting diodes

Defect structure ofa-plane GaN grown by hydride and metal-organic vapor phase epitaxy onr-plane sapphire

artículo científico publicado en 2007

Dependence of the binding energy of the acceptor on its position in a GaAs/AlxGa1-xAs quantum well

artículo científico publicado en 1991

Direct observation of large-scale nonuniformities in hydride vapor-phase epitaxy-grown gallium nitride by cathodoluminescence

scholarly article by E. M. Goldys et al published 14 December 1998 in Applied Physics Letters

Dominant recombination center in electron‐irradiated 3CSiC

Donor-acceptor pair emission enhancement in mass-transport-grown GaN

Effect of Mg doping on the structural and free-charge carrier properties of InN films

Effect of ion bombardment on deep photoluminescence bands in p-type boron-modulation-doped Si layers grown by molecular-beam epitaxy.

artículo científico publicado en 1995

Effective tuning of the charge-state of single In(Ga)As/GaAs quantum dots by below barrier band gap excitation

article by K.F. Karlsson et al published June 2003 in Surface Science

Effects of microwave fields on recombination processes in 4H and 6H SiC

Effects of separate carrier generation on the emission properties of InAs/GaAs quantum dots

artículo científico publicado en 2005

Electron effective masses and mobilities in high‐purity 6H–SiC chemical vapor deposition layers

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Electron effective masses in 4H SiC

Electron-paramagnetic-resonance studies of defects in electron-irradiated p-type 4H and 6H SiC

article published in 1999

Electronic structure of the 1.429-eV complex neutral defect in GaAs from tunable-dye-laser spectroscopy

artículo científico publicado en 1987

Electronic structure of the GaAs:MnGascenter

scholarly article in Physical Review B, vol. 55 no. 11, March 1997

Elimination of nonuniformities in thick GaN films using metalorganic chemical vapor deposited GaN templates

Erratum: “Elimination of nonuniformities in thick GaN films using metalorganic chemical vapor deposited GaN templates” [J. Appl. Phys. 90, 6011 (2001)]

scholarly article published in Journal of Applied Physics

Erratum: “Interfacial structure of a-plane GaN grown on r-plane sapphire” [Appl. Phys. Lett. 90, 081918 (2007)]

artículo científico publicado en 2007

Free electron behavior in InN: On the role of dislocations and surface electron accumulation

Free-Standing HVPE-GaN Quasi-Substrates: Impurity and Strain Distributions

Free-standing HVPE-GaN Layers

Hydride vapour-phase epitaxy growth and cathodoluminescence characterisation of thick GaN films

Identification of the gallium vacancy–oxygen pair defect in GaN

scholarly article in Physical Review B, vol. 80 no. 15, October 2009

Impact of MOCVD-GaN ‘templates’ on the spatial non-uniformities of strain and doping distribution in hydride vapour phase epitaxial GaN

Important role of shallow impurities in carrier recombination in SiC

article by W.M Chen et al published February 1995 in Solid State Communications

In-plane and in-depth nonuniformities in defect distribution in GaN and InGaN epilayers

InN quantum dots on GaN nanowires grown by MOVPE

Influence of growth rate on the structure of thick GaN layers grown by HVPE

article published in 2000

Influence of high-temperature processing on the surface properties of bulk AlN substrates

Influence of potential fluctuations on electrical transport and optical properties in modulation-dopedGaN/Al0.28Ga0.72Nheterostructures

scholarly article in Physical Review B, vol. 58 no. 3, July 1998

Infrared dielectric functions and phonon modes of high-quality ZnO films

Interfacial structure of a-plane GaN grown on r-plane sapphire

artículo científico publicado en 2007

Interisland exciton migration and enhanced bound exciton recombination in an AlGaAs/GaAs quantum well structure grown by molecular beam epitaxy without growth interruptions at interfaces

Lattice parameters, deviations from Vegard’s rule, and E2 phonons in InAlN

Magnetic characterization of conductance electrons in GaN

Magneto-optical spectroscopy of defects in wide bandgap semiconductors: GaN and SiC

Magneto-photoluminescence studies of Cd(Mn)Se/Zn(Mn)Se diluted magnetic nanostructures

artículo científico publicado en 2001

Many-body effects in highly acceptor-dopedGaAs/AlxGa1−xAsquantum wells

scholarly article in Physical Review B, vol. 58 no. 8, August 1998

Many-body effects in highlyp-type modulation-dopedGaAs/AlxGa1−xAsquantum wells

scholarly article in Physical Review B, vol. 61 no. 4, January 2000

Mass Transport Growth and Properties of Hydride Vapour Phase Epitaxy GaN

Mass transport growth and optical emission properties of hydride vapor phase epitaxy GaN

Nanometric-Scale Fluctuations of Intrinsic Electric Fields in GaN/AlGaN Quantum Wells with Inversion Domains

Nearly stress-free substrates for GaN homoepitaxy

New photoluminescence lines in selenium-doped silicon

On the Mechanism of Dislocation and Stacking Fault Formation in a-plane GaN Films Grown by Hydride Vapor Phase Epitaxy

artículo científico publicado en 2007

Optical Charging of Self-Assembled InAs/GaAs Quantum Dots

Optical Properties of p-Type Modulation Doped GaAs/AlGaAs Quantum Wells

Optical and transport studies of highly acceptor doped GaAs/AlGaAs quantum wells

Optical investigation of CdSe/ZnSe quantum nanostructures

Optical properties of GaN/AlGaN quantum wells with inversion domains

Optical properties of InN/In0.73Ga0.27N multiple quantum wells studied by spectroscopic ellipsometry

Optical properties of doped InGaN/GaN multiquantum-well structures

Optical studies of acceptor centre doped quantum wells

Optically detected magnetic resonance studies of defects in 3C SiC epitaxial layers

Optically detected magnetic resonance studies of defects in electron-irradiated 3C SiC layers

scholarly article in Physical Review B, vol. 55 no. 5, February 1997

Optically detected magnetic resonance studies of intrinsic defects in 6H-SiC

Performance of III-nitride epitaxy in a low V-to-III gas-flow ratio range under nitrogen ambient in a hot-wall MOCVD system

Phonons and free-carrier properties of binary, ternary, and quaternary group-III nitride layers measured by Infrared Spectroscopic Ellipsometry

artículo científico publicado en 2003

Photoconductivity in n-type modulation-doped GaN/AlGaN heterostructures

Photoluminescence and Zeeman effect in chromium-doped 4H and 6H SiC

Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates

Photoluminescence ofa -plane GaN: comparison between MOCVD and HVPE grown layers

Photoluminescence study of Si-doped GaN∕Al0.07Ga0.93N multiple quantum wells with different dopant position

Possible lifetime‐limiting defect in 6H SiC

article by Nguyen Tien Son et al published 21 November 1994 in Applied Physics Letters

Properties of Si δ-layers embedded in GaAs

Radiation-induced defects in GaN

Recombination of free and bound excitons in GaN

article by Bo Monemar et al published September 2008 in Physica Status Solidi B

Self-assembled InN quantum dots on side facets of GaN nanowires

Shallow excited states of deep luminescent centers in silicon

article by Mandeep Singh et al published February 1995 in Solid State Communications

Si δ-layers embedded in GaAs

SiC – a semiconductor for high-power, high-temperature and high-frequency devices

Spectroscopy studies of highly acceptor doped GaAs/AlGaAs quantum wells

Structural defect-related emissions in nonpolar a-plane GaN

The effect of the external lateral electric field on the luminescence intensity of InAs/GaAs quantum dots

Thick Hydride Vapour Phase Epitaxial GaN Layers Grown on Sapphire with Different Buffers

Time-resolved photoluminescence properties of AlGaN/AlN/GaN high electron mobility transistor structures grown on 4H-SiC substrate

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Time-resolved spectroscopy of excitons bound at shallow neutral donors in HVPE GaN

article by Bo Monemar et al published April 2006 in Physica B

Time‐resolved decay of the blue emission in porous silicon

Transient photoluminescence of shallow donor bound excitons in GaN

article by Bo Monemar et al published 6 December 2010 in Physical Review B

Unravelling the free electron behavior in InN

Weakly localized transport in modulation-doped GaN/AlGaN heterostructures