Lista de obras - Marcin Siekacz - Dominio Público Uruguay

AlGaN-Free Laser Diodes by Plasma-Assisted Molecular Beam Epitaxy

Aluminum-free nitride laser diodes: waveguiding, electrical and degradation properties

scholarly article by G. Muziol et al published 20 December 2017 in Optics Express

Anomalous photocurrent in wide InGaN quantum wells

scientific article published on 01 February 2020

Bandgap behavior of InGaN/GaN short period superlattices grown by metal-organic vapor phase epitaxy

Barrier-to-well carrier dynamics of InGaN/GaN multi-quantum-wells grown by plasma assisted MBE on bulk GaN substrates

Broadening of intersubband transitions in InGaN/AlInN multiquantum wells

artículo científico publicado en 2010

Contactless electroreflectance spectroscopy of inter- and intersub-band transitions in AlInN/GaInN quantum wells

artículo científico publicado en 2008

Determination of gain in AlGaN cladding free nitride laser diodes

Distributed-feedback blue laser diode utilizing a tunnel junction grown by plasma-assisted molecular beam epitaxy

artículo científico publicado en 2020

Elimination of leakage of optical modes to GaN substrate in nitride laser diodes using a thick InGaN waveguide

Enhanced injection efficiency and light output in bottom tunnel-junction light-emitting diodes

artículo científico publicado en 2020

Enhancement of optical confinement factor by InGaN waveguide in blue laser diodes grown by plasma-assisted molecular beam epitaxy

Extremely long lifetime of III-nitride laser diodes grown by plasma assisted molecular beam epitaxy

artículo científico publicado en 2019

GaN/AlGaN based transistors for terahertz emitters and detectors

article

Growth and characterization of AlInN/GaInN quantum wells for high-speed intersubband devices at telecommunication wavelengths

artículo científico publicado en 2006

Growth of thin AlInN∕GaInN quantum wells for applications to high-speed intersubband devices at telecommunication wavelengths

artículo científico publicado en 2006

Growth rate independence of Mg doping in GaN grown by plasma-assisted MBE

High power nitride laser diodes grown by plasma assisted molecular beam epitaxy

High quality m-plane GaN grown under nitrogen-rich conditions by plasma assisted molecular beam epitaxy

Impact of the substrate lattice constant on the emission properties of InGaN/GaN short-period superlattices grown by plasma assisted MBE

artículo científico publicado en 2019

InGaN laser diodes operating at 450–460 nm grown by rf-plasma MBE

Influence of quantum well inhomogeneities on absorption, spontaneous emission, photoluminescence decay time, and lasing in polar InGaN quantum wells emitting in the blue-green spectral region

artículo científico publicado en 2013

Integration of GaN Crystals on Micropatterned Si(0 0 1) Substrates by Plasma-Assisted Molecular Beam Epitaxy

Investigation of interface abruptness and In content in (In,Ga)N/GaN superlattices

Investigation on the origin of luminescence quenching in N-polar (In,Ga)N multiple quantum wells

MBE grown GaN/AlGaN lateral Schottky barrier diodes for high frequency applications

Nitride light-emitting diodes for cryogenic temperatures

artículo científico publicado en 2020

Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy

Optically pumped 500 nm InGaN green lasers grown by plasma-assisted molecular beam epitaxy

Peculiarities of plastic relaxation of (0001) InGaN epilayers and their consequences for pseudo-substrate application

Publisher’s Note: “Ultraviolet light-emitting diodes grown by plasma-assisted molecular beam epitaxy on semipolar GaN (202¯1) substrates” [Appl. Phys. Lett. 102, 111107 (2013)]

article published in 2014

Revealing inhomogeneous Si incorporation into GaN at the nanometer scale by electrochemical etching

scientific article published on 01 March 2020

Role of Nonequivalent Atomic Step Edges in the Growth of InGaN by Plasma-Assisted Molecular Beam Epitaxy

Stack of two III-nitride laser diodes interconnected by a tunnel junction

scientific article published on 01 February 2019

Step-flow anisotropy of them-plane GaN (11¯00) grown under nitrogen-rich conditions by plasma-assisted molecular beam epitaxy

scholarly article in Physical Review B, vol. 83 no. 24, June 2011

Strain relaxation in semipolar (202¯1) InGaN grown by plasma assisted molecular beam epitaxy

Surface and in-depth characterization of InGaN compounds synthesized by plasma-assisted molecular beam epitaxy

Surface properties of c-plane GaN grown by plasma-assisted molecular beam epitaxy

Theoretical simulations of radiative recombination time in polar InGaN quantum wells

True-Blue Nitride Laser Diodes Grown by Plasma-Assisted Molecular Beam Epitaxy

article by Czeslaw Skierbiszewski et al published 19 October 2012 in Applied Physics Express

True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy

article by Czeslaw Skierbiszewski et al published 9 February 2018 in Applied Physics Express

True-blue nitride laser diodes grown by plasma assisted MBE on low dislocation density GaN substrates

scholarly article published 4 March 2013

Tunnel junctions for two-color nitride light emitting diodes and laser diodes grown by plasma assisted molecular beam epitaxy

Ultraviolet light-emitting diodes grown by plasma-assisted molecular beam epitaxy on semipolar GaN (202¯1) substrates

“Aluminum free nitride laser diodes grown by plasma assisted MBE”

scholarly article published June 2016

Lista de obras de Marcin Siekacz

AlGaN-Free Laser Diodes by Plasma-Assisted Molecular Beam Epitaxy

Aluminum-free nitride laser diodes: waveguiding, electrical and degradation properties

Anomalous photocurrent in wide InGaN quantum wells

Bandgap behavior of InGaN/GaN short period superlattices grown by metal-organic vapor phase epitaxy

Barrier-to-well carrier dynamics of InGaN/GaN multi-quantum-wells grown by plasma assisted MBE on bulk GaN substrates

Broadening of intersubband transitions in InGaN/AlInN multiquantum wells

Contactless electroreflectance spectroscopy of inter- and intersub-band transitions in AlInN/GaInN quantum wells

Determination of gain in AlGaN cladding free nitride laser diodes

Distributed-feedback blue laser diode utilizing a tunnel junction grown by plasma-assisted molecular beam epitaxy

Elimination of leakage of optical modes to GaN substrate in nitride laser diodes using a thick InGaN waveguide

Enhanced injection efficiency and light output in bottom tunnel-junction light-emitting diodes

Enhancement of optical confinement factor by InGaN waveguide in blue laser diodes grown by plasma-assisted molecular beam epitaxy

Extremely long lifetime of III-nitride laser diodes grown by plasma assisted molecular beam epitaxy

GaN/AlGaN based transistors for terahertz emitters and detectors

Growth and characterization of AlInN/GaInN quantum wells for high-speed intersubband devices at telecommunication wavelengths

Growth of thin AlInN∕GaInN quantum wells for applications to high-speed intersubband devices at telecommunication wavelengths

Growth rate independence of Mg doping in GaN grown by plasma-assisted MBE

High power nitride laser diodes grown by plasma assisted molecular beam epitaxy

High quality m-plane GaN grown under nitrogen-rich conditions by plasma assisted molecular beam epitaxy

Impact of the substrate lattice constant on the emission properties of InGaN/GaN short-period superlattices grown by plasma assisted MBE

InGaN laser diodes operating at 450–460 nm grown by rf-plasma MBE

Influence of quantum well inhomogeneities on absorption, spontaneous emission, photoluminescence decay time, and lasing in polar InGaN quantum wells emitting in the blue-green spectral region

Integration of GaN Crystals on Micropatterned Si(0 0 1) Substrates by Plasma-Assisted Molecular Beam Epitaxy

Investigation of interface abruptness and In content in (In,Ga)N/GaN superlattices

Investigation on the origin of luminescence quenching in N-polar (In,Ga)N multiple quantum wells

MBE grown GaN/AlGaN lateral Schottky barrier diodes for high frequency applications

Nitride light-emitting diodes for cryogenic temperatures

Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy

Optically pumped 500 nm InGaN green lasers grown by plasma-assisted molecular beam epitaxy

Peculiarities of plastic relaxation of (0001) InGaN epilayers and their consequences for pseudo-substrate application

Publisher’s Note: “Ultraviolet light-emitting diodes grown by plasma-assisted molecular beam epitaxy on semipolar GaN (202¯1) substrates” [Appl. Phys. Lett. 102, 111107 (2013)]

Revealing inhomogeneous Si incorporation into GaN at the nanometer scale by electrochemical etching

Role of Nonequivalent Atomic Step Edges in the Growth of InGaN by Plasma-Assisted Molecular Beam Epitaxy

Stack of two III-nitride laser diodes interconnected by a tunnel junction

Step-flow anisotropy of them-plane GaN (11¯00) grown under nitrogen-rich conditions by plasma-assisted molecular beam epitaxy

Strain relaxation in semipolar (202¯1) InGaN grown by plasma assisted molecular beam epitaxy

Surface and in-depth characterization of InGaN compounds synthesized by plasma-assisted molecular beam epitaxy

Surface properties of c-plane GaN grown by plasma-assisted molecular beam epitaxy

Theoretical simulations of radiative recombination time in polar InGaN quantum wells

True-Blue Nitride Laser Diodes Grown by Plasma-Assisted Molecular Beam Epitaxy

True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy

True-blue nitride laser diodes grown by plasma assisted MBE on low dislocation density GaN substrates

Tunnel junctions for two-color nitride light emitting diodes and laser diodes grown by plasma assisted molecular beam epitaxy

Ultraviolet light-emitting diodes grown by plasma-assisted molecular beam epitaxy on semipolar GaN (202¯1) substrates

“Aluminum free nitride laser diodes grown by plasma assisted MBE”