Lista de obras - Ivan G. Ivanov - Dominio Público Uruguay

A SIMS study on Mg diffusion in Zn0.94Mg0.06O/ZnO heterostructures grown by metal organic chemical vapor deposition

Analysis of the sharp donor-acceptor pair luminescence in4H-SiC doped with nitrogen and aluminum

scholarly article by Ivan G. Ivanov et al published 30 April 2003 in Physical Review B

Anti-site pair in SiC: a model of the DI center

Assessment of H-intercalated graphene for microwave FETs through material characterization and electron transport studies

article

Brominated Chemistry for Chemical Vapor Deposition of Electronic Grade SiC

Common point defects in as-grown ZnO substrates studied by optical detection of magnetic resonance

Control of Epitaxial Graphene Thickness on 4H-SiC(0001) and Buffer Layer Removal through Hydrogen Intercalation

Correlation between the antisite pair and theDIcenter in SiC

scholarly article in Physical Review B, vol. 67 no. 15, April 2003

Defects in silicon carbide grown by fluorinated chemical vapor deposition chemistry

scholarly article by Pontus Stenberg et al published April 2018 in Physica B

Donor-Acceptor Pair Luminescence of P-Al and N-Al Pairs in 3C-SiC and the Ionization Energy of the P Donor

EPR and ENDOR Studies of Shallow Donors in SiC

article by Nguyen Tien Son et al published 26 May 2010 in Applied Magnetic Resonance

Effective-mass approximation for shallow donors in uniaxial indirect band-gap crystals and application to4H−SiC

article by Ivan G. Ivanov et al published 18 January 2006 in Physical Review B

Electronic Configuration of Tungsten in 4H-, 6H-, and 15R-SiC

Excitation properties of hydrogen-related photoluminescence in6H−SiC

scholarly article in Physical Review B, vol. 62 no. 11, September 2000

Excitation spectra of nitrogen bound excitons in 4H- and 6H-SiC

Ga-bound excitons in 3C-, 4H-, and 6H-SiC

artículo científico publicado en 1996

Graphene self-switching diodes as zero-bias microwave detectors

article

High quality 4H-SiC grown on various substrate orientations

High temperature chemical vapor deposition of SiC

High-Resolution Raman and Luminescence Spectroscopy of Isotope-Pure 28 Si 12 C, Natural and 13 C – Enriched 4H-SiC

Hot-wall MOCVD grown homoepitaxial GaN layers with intense intrinsic excitonic structure

Hydrogen at zinc vacancy of ZnO: An EPR and ESEEM study

Identification and tunable optical coherent control of transition-metal spins in silicon carbide

scholarly article by Tom Bosma et al published 1 October 2018 in Npj Quantum Information

In-situ terahertz optical Hall effect measurements of ambient effects on free charge carrier properties of epitaxial graphene

artículo científico publicado en 2017

Investigation of Intrinsic Carbon-Related Defects in 4H-SiC by Selective-Excitation Photoluminescence Spectroscopy

Ionization energy of the phosphorus donor in 3C–SiC from the donor-acceptor pair emission

Layer-number determination in graphene on SiC by reflectance mapping

scholarly article in Carbon, vol. 77, October 2014

Lead (Pb) interfacing with epitaxial graphene

artículo científico publicado en 2018

Ligand hyperfine interactions at silicon vacancies in 4H-SiC

scientific article published on 14 February 2019

Magnetic resonance identification of hydrogen at a zinc vacancy in ZnO

artículo científico publicado en 2013

Magnetic resonance studies of defects in electron-irradiated ZnO substrates

Negative-U behavior of the Si donor in Al0.77Ga0.23N

Nitrogen doping concentration as determined by photoluminescence in 4H– and 6H–SiC

On the use of methane as a carbon precursor in Chemical Vapor Deposition of silicon carbide

scholarly article by M. Yazdanfar et al published March 2014 in Journal of Crystal Growth

Optical Properties of the Niobium Centre in 4H, 6H, and 15R SiC

scholarly article published January 2013

Optical identification and electronic configuration of tungsten in 4H- and 6H-SiC

Optical selection rules for shallow donors in4H−SiCand ionization energy of the nitrogen donor at the hexagonal site

article by Ivan G. Ivanov et al published 30 April 2003 in Physical Review B

Phonon replicas at theMpoint in4H−SiC:A theoretical and experimental study

scholarly article in Physical Review B, vol. 58 no. 20, November 1998

Photoluminescence of 4H-SiC: some remarks

Photoluminescence of 8H-SiC

Photoluminescence of electron-irradiated4H−SiC

scholarly article in Physical Review B, vol. 59 no. 12, March 1999

Photoluminescence upconversion in 4H–SiC

Process stability and morphology optimization of very thick 4H–SiC epitaxial layers grown by chloride-based CVD

Properties of theD1bound exciton in4H−SiC

scholarly article in Physical Review B, vol. 59 no. 3, January 1999

Publisher's Note: “Graphene self-switching diodes as zero-bias microwave detectors” [Appl. Phys. Lett. 106, 093116 (2015)]

article

Quantum Properties of Dichroic Silicon Vacancies in Silicon Carbide

artículo científico publicado en 2018

Quasi-free-standing monolayer and bilayer graphene growth on homoepitaxial on-axis 4H-SiC(0 0 0 1) layers

article

Raman scattering study of crystal perfection of MOVPE-grown GaAs

artículo científico publicado en 1993

Recombination centers in as-grown and electron-irradiated ZnO substrates

Reduction of structural defects in thick 4H-SiC epitaxial layers grown on 4° off-axis substrates

Resonant ionization of shallow donors in electric field

article by Ivan G. Ivanov & Erik Janzén published 7 July 2014 in Physica Scripta

Stable and metastable Si negative-U centers in AlGaN and AlN

The material quality of CVD-grown SiC using different carbon precursors

Thermal conductivity of isotopically enriched silicon carbide

scholarly article published September 2013

Understanding Graphene Response to Neutral and Charged Lead Species: Theory and Experiment

artículo científico publicado en 2018

Lista de obras de Ivan G. Ivanov

A SIMS study on Mg diffusion in Zn0.94Mg0.06O/ZnO heterostructures grown by metal organic chemical vapor deposition

Analysis of the sharp donor-acceptor pair luminescence in4H-SiC doped with nitrogen and aluminum

Anti-site pair in SiC: a model of the DI center

Assessment of H-intercalated graphene for microwave FETs through material characterization and electron transport studies

Brominated Chemistry for Chemical Vapor Deposition of Electronic Grade SiC

Common point defects in as-grown ZnO substrates studied by optical detection of magnetic resonance

Control of Epitaxial Graphene Thickness on 4H-SiC(0001) and Buffer Layer Removal through Hydrogen Intercalation

Correlation between the antisite pair and theDIcenter in SiC

Defects in silicon carbide grown by fluorinated chemical vapor deposition chemistry

Donor-Acceptor Pair Luminescence of P-Al and N-Al Pairs in 3C-SiC and the Ionization Energy of the P Donor

EPR and ENDOR Studies of Shallow Donors in SiC

Effective-mass approximation for shallow donors in uniaxial indirect band-gap crystals and application to4H−SiC

Electronic Configuration of Tungsten in 4H-, 6H-, and 15R-SiC

Excitation properties of hydrogen-related photoluminescence in6H−SiC

Excitation spectra of nitrogen bound excitons in 4H- and 6H-SiC

Ga-bound excitons in 3C-, 4H-, and 6H-SiC

Graphene self-switching diodes as zero-bias microwave detectors

High quality 4H-SiC grown on various substrate orientations

High temperature chemical vapor deposition of SiC

High-Resolution Raman and Luminescence Spectroscopy of Isotope-Pure 28 Si 12 C, Natural and 13 C – Enriched 4H-SiC

Hot-wall MOCVD grown homoepitaxial GaN layers with intense intrinsic excitonic structure

Hydrogen at zinc vacancy of ZnO: An EPR and ESEEM study

Identification and tunable optical coherent control of transition-metal spins in silicon carbide

In-situ terahertz optical Hall effect measurements of ambient effects on free charge carrier properties of epitaxial graphene

Investigation of Intrinsic Carbon-Related Defects in 4H-SiC by Selective-Excitation Photoluminescence Spectroscopy

Ionization energy of the phosphorus donor in 3C–SiC from the donor-acceptor pair emission

Layer-number determination in graphene on SiC by reflectance mapping

Lead (Pb) interfacing with epitaxial graphene

Ligand hyperfine interactions at silicon vacancies in 4H-SiC

Magnetic resonance identification of hydrogen at a zinc vacancy in ZnO

Magnetic resonance studies of defects in electron-irradiated ZnO substrates

Negative-U behavior of the Si donor in Al0.77Ga0.23N

Nitrogen doping concentration as determined by photoluminescence in 4H– and 6H–SiC

On the use of methane as a carbon precursor in Chemical Vapor Deposition of silicon carbide

Optical Properties of the Niobium Centre in 4H, 6H, and 15R SiC

Optical identification and electronic configuration of tungsten in 4H- and 6H-SiC

Optical selection rules for shallow donors in4H−SiCand ionization energy of the nitrogen donor at the hexagonal site

Phonon replicas at theMpoint in4H−SiC:A theoretical and experimental study

Photoluminescence of 4H-SiC: some remarks

Photoluminescence of 8H-SiC

Photoluminescence of electron-irradiated4H−SiC

Photoluminescence upconversion in 4H–SiC

Process stability and morphology optimization of very thick 4H–SiC epitaxial layers grown by chloride-based CVD

Properties of theD1bound exciton in4H−SiC

Publisher's Note: “Graphene self-switching diodes as zero-bias microwave detectors” [Appl. Phys. Lett. 106, 093116 (2015)]

Quantum Properties of Dichroic Silicon Vacancies in Silicon Carbide

Quasi-free-standing monolayer and bilayer graphene growth on homoepitaxial on-axis 4H-SiC(0 0 0 1) layers

Raman scattering study of crystal perfection of MOVPE-grown GaAs

Recombination centers in as-grown and electron-irradiated ZnO substrates

Reduction of structural defects in thick 4H-SiC epitaxial layers grown on 4° off-axis substrates

Resonant ionization of shallow donors in electric field

Stable and metastable Si negative-U centers in AlGaN and AlN

The material quality of CVD-grown SiC using different carbon precursors

Thermal conductivity of isotopically enriched silicon carbide

Understanding Graphene Response to Neutral and Charged Lead Species: Theory and Experiment

Uniform hot-wall MOCVD epitaxial growth of 2inch AlGaN/GaN HEMT structures