A Morphological, Chemical and Electrical Study of HfSiON Films for Inter Poly Dielectric Applications in Flash Memories

Atomic Layer Deposition of Lu Silicate Films Using [(Me[sub 3]Si)[sub 2]N][sub 3]Lu

Atomic Layer Deposition of NiO Films on Si(100) Using Cyclopentadienyl-Type Compounds and Ozone as Precursors

Combining grazing incidence X-ray diffraction and X-ray reflectivity for the evaluation of the structural evolution of HfO2 thin films with annealing

article published in 2004

Cubic-to-monoclinic phase transition during the epitaxial growth of crystalline Gd2O3 films on Ge(001) substrates

article published in 2007

Effects of annealing temperature and surface preparation on the formation of cobalt silicide interconnects

scholarly article by Claudia Wiemer et al published November 2003 in Microelectronic Engineering

Evolution of crystallographic ordering in Hf1−xAlxOy high-κ dielectric deposited by atomic layer deposition

High-k Materials in Flash Memories

Monitoring the formation of Sb nanocrystals in SiO2 by grazing incidence x-ray techniques

Nondestructive diagnostics of high-κ dielectrics for advanced electronic devices

Ozone-Based Atomic Layer Deposition of Alumina from TMA: Growth, Morphology, and Reaction Mechanism

article

Structural and Chemical Investigation of Annealed Al2O3 Films for Interpoly Dielectric Application in Flash Memories

TEM/CBED determination of strain in silicon-based submicrometric electronic devices

artículo científico publicado en 2000

[(Me3Si)2N]3Lu: Molecular Structure and Use as Lu and Si Source for Atomic Layer Deposition of Lu Silicate Films