A 0.4dB noise figure wideband low-noise amplifier using a novel InGaAs/InAlAs/InP device

A Hybrid Planar-Doped Potential-Well Barrier Diode for Detector Applications

A Quantum Well Hall Effect linear isolator with wide frequency response and low gain temperature coefficient

A novel low temperature soft reflow process for the fabrication of deep-submicron (<0.35 μm) T-gate pseudomorphic high electron mobility transistor structures

artículo científico publicado en 2013

A real time high sensitivity high spatial resolution quantum well hall effect magnetovision camera

Achieving reproducibility needed for manufacturing semiconductor tunnel devices

All-optoelectronic terahertz system using low-temperature-grown InGaAs photomixers

artículo científico publicado en 2005

Altering the Optical Properties of GaAsSb-Capped InAs Quantum Dots by Means of InAlAs Interlayers

artículo científico publicado en 2019

Carrier emission from the electronic states of self-assembled indium arsenide quantum dots

Characterisation of InAs/GaAs quantum dots intermediate band photovoltaic devices

Characterization of low temperature InGaAs-InAlAs semiconductor photo mixers at 1.55 μm wavelength illumination for terahertz generation and detection

Coexistence of deep levels with optically active InAs quantum dots

scholarly article in Physical Review B, vol. 72 no. 16, October 2005

Combined optical and electrical studies of the effects of annealing on the intrinsic states and deep levels in a self-assembled InAs quantum-dot structure

Continuous-wave terahertz system with a 60 dB dynamic range

Defect investigation of stacked self-assembled InAs/GaAs quantum dot lasers

Design of a wideband low noise amplifier for radio-astronomy applications

scholarly article by Z Hamaizia et al published 23 April 2010 in Journal of Instrumentation

Diamond heat sinking of terahertz antennas for continuous-wave photomixing

Direct demonstration of the ‘virtual gate’ mechanism for current collapse in AlGaN/GaN HFETs

Direct measurement of composition of buried quantum dots using aberration-corrected scanning transmission electron microscopy

article

Dynamic modulation of the Fermi energy in suspended graphene backgated devices.

artículo científico publicado en 2019

Electron- and hole-related electrical activity of InAs/GaAs quantum dots

Elimination of Current Blocking in Ternary InAlAs-InGaAs-InAlAs Double Heterojunction Bipolar Transistors

article

Extracting random numbers from quantum tunnelling through a single diode

artículo científico publicado en 2017

Extremely Uniform Tunnel Barriers for Low-Cost Device Manufacture

Fabrication and characterization of tensile In0.3Al0.7As barrier and compressive In0.7Ga0.3As channel pHEMTs having extremely low gate leakage for low-noise applications

Formation and role of defects in stacked large binary InAs/GaAs quantum dot structures

Fully Integrated Broadband CPW Left-Handed Metamaterials Based on GaAs Technology for RF/MMIC Applications

GaAs/AlGaAs potential well barrier diodes: Novel diode for detector and mixer applications

High resistivity annealed low-temperature GaAs with 100 fs lifetimes

High-Performance InGaP/GaAs HBTs With Compositionally Graded Bases Grown by Solid-Source MBE

article

Highly Sensitive Nanotesla Quantum-Well Hall-Effect Integrated Circuit Using GaAs–InGaAs–AlGaAs 2DEG

Highly reproducible tunnel currents in MBE-grown semiconductor multilayers

InGaAs/AlAs Resonant Tunneling Diodes for THz Applications: An Experimental Investigation

Interaction of low-temperature surfactant-grown InAs superlattice layers with arsenic precipitates

Investigation of mm-wave RTD based amplifiers ⬇️

Investigations of Asymmetric Spacer Tunnel Layer Diodes for High-Frequency Applications

Left-Handed Metamaterial Coplanar Waveguide Components and Circuits in GaAs MMIC Technology

Long Wavelength Low Temperature Grown GaAs and InP-Based Terahertz Photoconductors Devices

Microwave detection at 110 Ghz by nanowires with broken symmetry.

artículo científico publicado en 2005

Modeling of high gain and μW level power consumption resonant tunneling diode based amplifiers

Multi-channel homodyne detection of continuous-wave terahertz radiation

Multilayer stacking and metal deposition effects on large area graphene on GaAs

scholarly article in Carbon, vol. 96, January 2016

Multiple-frequency terahertz pulsed sensing of dielectric films

Nanometer-scale two-terminal semiconductor memory operating at room temperature

Nanoscale molybdenum gates fabricated by low damage inductively coupled plasma SF6/C4F8 etching suitable for high performance compound semiconductor transistors

article

Near room temperature operation of a highly strained short wavelength (2.1 µm) AlAs/In0.84Ga0.16As/AlAs/InAlAs QWIP

On the Design of Gyroelectric Resonators and Circulators Using a Magnetically Biased 2-D Electron Gas (2-DEG)

article

On the thermal dependence of the generation of terahertz radiation by photomixing

On-chip photoconductive excitation and detection of pulsed terahertz radiation at cryogenic temperatures

Optimised THz photoconductive devices based on low-temperature grown III–V compound semiconductors incorporating distributed Bragg reflectors

article by Yuekun Wang et al published 1 April 2017 in IET Optoelectronics

Optimization of photomixers and antennas for continuous-wave terahertz emission

Photovoltaic operation up to 270 K of a strain-compensated AlAs∕In0.84Ga0.16As∕AlAs∕InAlAs quantum well infrared photodetector

Physical modelling and experimental characterisation of InAlAs/InGaAs avalanche photodiode for 10 Gb/s data rates and higher

Predicted bandgap opening in highly-oriented wrinkles formed in chemical vapour deposition grown graphene

RF performance of a novel all ternary InAlAs\InGaAs DHBT

Rapid evaluation of doping-spike carrier concentration levels in millimetre-wave GaAs Gunn diodes with hot-electron injection

Relation between photocurrent and DLTS signals observed for quantum dot systems

Resonant dipole antennas for continuous-wave terahertz photomixers

Study of Switching and Kirk Effects in InAlAs/InGaAs/InAlAs Double Heterojunction Bipolar Transistors

article

Submicron probes for Hall magnetometry over the extended temperature range from helium to room temperature

Submicron sensors of local electric field with single-electron resolution at room temperature

Surfactant-mediated growth of InAs–GaAs superlattices and quantum dot structures grown at different temperatures

Temperature dependence of InAs/GaAs quantum dots solar photovoltaic devices

Temperature studies of InAlAs–InGaAs–InAlAs double heterojunction bipolar transistors with no current blocking

article

Terahertz Generation and Detection Using Low Temperature Grown InGaAs-InAlAs Photoconductive Antennas at 1.55 $\mu{\hbox{m}}$ Pulse Excitation

Terahertz pulsed imaging with 1.06 μm laser excitation

Thermally stable In0.7Ga0.3As/In0.52Al0.48As pHEMTs using thermally evaporated palladium gate metallization

Thickness control of molecular beam epitaxy grown layers at the 0.01–0.1 monolayer level

Tuning the optical properties of InAs QDs by means of digitally-alloyed GaAsSb strain reducing layers

Under pressure: Control of strain, phonons and bandgap opening in rippled graphene

scholarly article in Carbon, vol. 91, September 2015

Using Quantum Confinement to Uniquely Identify Devices.

artículo científico publicado en 2015