Lista de obras - Fabrice Oehler - Dominio Público Uruguay

A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates

artículo científico publicado en 2016

Abrupt GaP/GaAs Interfaces in Self-Catalyzed Nanowires

artículo científico publicado en 2015

Alloy content determination of fully strained and partially relaxed semi-polar group III-nitrides by x-ray diffraction

An investigation into defect reduction techniques for growth of non-polar GaN on sapphire

article

Bias dependence and correlation of the cathodoluminescence and electron beam induced current from an InGaN/GaN light emitting diode

article

Comparative study of polar and semipolar (112¯2) InGaN layers grown by metalorganic vapour phase epitaxy

Control of Gold Surface Diffusion on Si Nanowires

artículo científico publicado en 2008

Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells

article published in 2013

Determination of n-Type Doping Level in Single GaAs Nanowires by Cathodoluminescence

artículo científico publicado en 2017

Effect of HCl on the doping and shape control of silicon nanowires

scientific article published on 03 May 2012

Effect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes

Electronic properties of rhombohedrally stacked bilayer WSe2 obtained by chemical vapor deposition

scholarly article 10.1103/PhysRevB.108.045417

Epitaxy of GaN Nanowires on Graphene

scientific article published on 26 July 2016

Erratum: “Alloy content determination of fully strained and partially relaxed semi-polar group III-nitrides by x-ray diffraction” [J. Appl. Phys. 114, 053520 (2013)]

scholarly article published in Journal of Applied Physics

Evaluation of growth methods for the heteroepitaxy of non-polar ( 11 2 ¯ 0 ) GAN on sapphire by MOVPE

Fundamentals of X-ray Diffraction Characterisation of Strain in GaN Based Compounds

Growth and characterization of gold catalyzed SiGe nanowires and alternative metal-catalyzed Si nanowires

artículo científico publicado en 2011

Growth and low temperature photoluminescence of silicon nanowires for different catalysts

Growth of non-polar (11-20) InGaN quantum dots by metal organic vapour phase epitaxy using a two temperature method

article published in 2014

Hidden defects in silicon nanowires.

artículo científico publicado en 2012

High temperature stability in non-polar (11$ \bar 2 $0) InGaN quantum dots: Exciton and biexciton dynamics

article

In Situ Optical Monitoring of New Pathways in the Metal-Induced Crystallization of Amorphous Ge

In situ passivation of GaAsP nanowires

artículo científico publicado en 2017

Indium clustering in a-plane InGaN quantum wells as evidenced by atom probe tomography

scholarly article by Fengzai Tang et al published 16 February 2015 in Applied Physics Letters

Interface dipole and band bending in the hybrid p−n heterojunction MoS2/GaN(0001)

scholarly article in Physical Review B, vol. 96 no. 11, September 2017

Kinetics and crystal texture improvements on thin germanium layers obtained by aluminium induced crystallization using oxygen plasma

scholarly article by D. Pelati et al published June 2018 in Surface & Coatings Technology

Local carrier recombination and associated dynamics in m-plane InGaN/GaN quantum wells probed by picosecond cathodoluminescence

Low temperature carrier redistribution dynamics in InGaN/GaN quantum wells

article

Measuring and Modeling the Growth Dynamics of Self-Catalyzed GaP Nanowire Arrays

artículo científico publicado en 2017

Microstructural dependency of optical properties of m-plane InGaN multiple quantum wells grown on 2° misoriented bulk GaN substrates

Morphology Tailoring and Growth Mechanism of Indium-Rich InGaN/GaN Axial Nanowire Heterostructures by Plasma-Assisted Molecular Beam Epitaxy

Non-polar (11$ \bar 2 $0) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapour phase epitaxy

article

Non-polar (11-20) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapor phase epitaxy

article

Non-polar InGaN quantum dot emission with crystal-axis oriented linear polarization

Observations of Rabi oscillations in a non-polar InGaN quantum dot

article

Optical studies of non-polar m-plane (11¯00) InGaN/GaN multi-quantum wells grown on freestanding bulk GaN

Photoluminescence of confined electron-hole plasma in core-shell silicon/silicon oxide nanowires

Photoluminescence of silicon nanowires obtained by epitaxial chemical vapor deposition

Polarized photoluminescence excitation spectroscopy of a-plane InGaN/GaN multiple quantum wells grown on r-plane sapphire

Quantum confinement effects and strain-induced band-gap energy shifts in core-shell Si-SiO2nanowires

scholarly article in Physical Review B, vol. 83 no. 24, June 2011

Recombination Dynamics of Spatially Confined Electron−Hole System in Luminescent Gold Catalyzed Silicon Nanowires

artículo científico publicado en 2009

Self-induced growth of vertical GaN nanowires on silica

artículo científico publicado en 2016

Sharpening the Interfaces of Axial Heterostructures in Self-Catalyzed AlGaAs Nanowires: Experiment and Theory

artículo científico publicado en 2016

Stable and high yield growth of GaP and In0.2Ga0.8As nanowire arrays using In as a catalyst

artículo científico publicado en 2020

Structural and magnetic properties of ultra-thin Fe films on metal-organic chemical vapour deposited GaN(0001)

Structural and optical properties of (112̅2) InGaN quantum wells compared to (0001) and (112̅0)

Structural investigation of silicon nanowires with grazing incidence small angle X-ray scattering

Structural, electronic, and optical properties ofm-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory ⬇️

scholarly article in Physical Review B, vol. 92 no. 23, December 2015

Structure and strain relaxation effects of defects in InxGa1−xN epilayers

Surface Recombination Velocity Measurements of Efficiently Passivated Gold-Catalyzed Silicon Nanowires by a New Optical Method

artículo científico publicado en 2010

Surface morphology of homoepitaxial c-plane GaN: Hillocks and ridges

The Importance of the Radial Growth in the Faceting of Silicon Nanowires

scientific article published on 01 July 2010

The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem

artículo científico publicado en 2017

The effect of dislocations on the efficiency of InGaN/GaN solar cells

The effects of HCl on silicon nanowire growth: surface chlorination and existence of a ‘diffusion-limited minimum diameter’

artículo científico publicado en 2009

The effects of varying threading dislocation density on the optical properties of InGaN/GaN quantum wells

The impact of growth parameters on trench defects in InGaN/GaN quantum wells

article published in 2014

The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem

The microstructure of non-polar a-plane (11 2¯0) InGaN quantum wells

The morphology of silicon nanowires grown in the presence of trimethylaluminium

artículo científico publicado en 2009

Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells

What is red? On the chromaticity of orange-red InGaN/GaN based LEDs

article by Y. Robin et al published 14 November 2018 in Journal of Applied Physics

Lista de obras de Fabrice Oehler

A study of the optical and polarisation properties of InGaN/GaN multiple quantum wells grown on a-plane and m-plane GaN substrates

Abrupt GaP/GaAs Interfaces in Self-Catalyzed Nanowires

Alloy content determination of fully strained and partially relaxed semi-polar group III-nitrides by x-ray diffraction

An investigation into defect reduction techniques for growth of non-polar GaN on sapphire

Bias dependence and correlation of the cathodoluminescence and electron beam induced current from an InGaN/GaN light emitting diode

Comparative study of polar and semipolar (112¯2) InGaN layers grown by metalorganic vapour phase epitaxy

Control of Gold Surface Diffusion on Si Nanowires

Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells

Determination of n-Type Doping Level in Single GaAs Nanowires by Cathodoluminescence

Effect of HCl on the doping and shape control of silicon nanowires

Effect of the barrier growth mode on the luminescence and conductivity micron scale uniformity of InGaN light emitting diodes

Electronic properties of rhombohedrally stacked bilayer WSe2 obtained by chemical vapor deposition

Epitaxy of GaN Nanowires on Graphene

Erratum: “Alloy content determination of fully strained and partially relaxed semi-polar group III-nitrides by x-ray diffraction” [J. Appl. Phys. 114, 053520 (2013)]

Evaluation of growth methods for the heteroepitaxy of non-polar ( 11 2 ¯ 0 ) GAN on sapphire by MOVPE

Fundamentals of X-ray Diffraction Characterisation of Strain in GaN Based Compounds

Growth and characterization of gold catalyzed SiGe nanowires and alternative metal-catalyzed Si nanowires

Growth and low temperature photoluminescence of silicon nanowires for different catalysts

Growth of non-polar (11-20) InGaN quantum dots by metal organic vapour phase epitaxy using a two temperature method

Hidden defects in silicon nanowires.

High temperature stability in non-polar (11$ \bar 2 $0) InGaN quantum dots: Exciton and biexciton dynamics

In Situ Optical Monitoring of New Pathways in the Metal-Induced Crystallization of Amorphous Ge

In situ passivation of GaAsP nanowires

Indium clustering in a-plane InGaN quantum wells as evidenced by atom probe tomography

Interface dipole and band bending in the hybrid p−n heterojunction MoS2/GaN(0001)

Kinetics and crystal texture improvements on thin germanium layers obtained by aluminium induced crystallization using oxygen plasma

Local carrier recombination and associated dynamics in m-plane InGaN/GaN quantum wells probed by picosecond cathodoluminescence

Low temperature carrier redistribution dynamics in InGaN/GaN quantum wells

Measuring and Modeling the Growth Dynamics of Self-Catalyzed GaP Nanowire Arrays

Microstructural dependency of optical properties of m-plane InGaN multiple quantum wells grown on 2° misoriented bulk GaN substrates

Morphology Tailoring and Growth Mechanism of Indium-Rich InGaN/GaN Axial Nanowire Heterostructures by Plasma-Assisted Molecular Beam Epitaxy

Non-polar (11$ \bar 2 $0) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapour phase epitaxy

Non-polar (11-20) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapor phase epitaxy

Non-polar InGaN quantum dot emission with crystal-axis oriented linear polarization

Observations of Rabi oscillations in a non-polar InGaN quantum dot

Optical studies of non-polar m-plane (11¯00) InGaN/GaN multi-quantum wells grown on freestanding bulk GaN

Photoluminescence of confined electron-hole plasma in core-shell silicon/silicon oxide nanowires

Photoluminescence of silicon nanowires obtained by epitaxial chemical vapor deposition

Polarized photoluminescence excitation spectroscopy of a-plane InGaN/GaN multiple quantum wells grown on r-plane sapphire

Quantum confinement effects and strain-induced band-gap energy shifts in core-shell Si-SiO2nanowires

Recombination Dynamics of Spatially Confined Electron−Hole System in Luminescent Gold Catalyzed Silicon Nanowires

Self-induced growth of vertical GaN nanowires on silica

Sharpening the Interfaces of Axial Heterostructures in Self-Catalyzed AlGaAs Nanowires: Experiment and Theory

Stable and high yield growth of GaP and In0.2Ga0.8As nanowire arrays using In as a catalyst

Structural and magnetic properties of ultra-thin Fe films on metal-organic chemical vapour deposited GaN(0001)

Structural and optical properties of (112̅2) InGaN quantum wells compared to (0001) and (112̅0)

Structural investigation of silicon nanowires with grazing incidence small angle X-ray scattering

Structural, electronic, and optical properties ofm-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory ⬇️

Structure and strain relaxation effects of defects in InxGa1−xN epilayers

Surface Recombination Velocity Measurements of Efficiently Passivated Gold-Catalyzed Silicon Nanowires by a New Optical Method

Surface morphology of homoepitaxial c-plane GaN: Hillocks and ridges

The Importance of the Radial Growth in the Faceting of Silicon Nanowires

The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem

The effect of dislocations on the efficiency of InGaN/GaN solar cells

The effects of HCl on silicon nanowire growth: surface chlorination and existence of a ‘diffusion-limited minimum diameter’

The effects of varying threading dislocation density on the optical properties of InGaN/GaN quantum wells

The impact of growth parameters on trench defects in InGaN/GaN quantum wells

The impact of trench defects in InGaN/GaN light emitting diodes and implications for the “green gap” problem

The microstructure of non-polar a-plane (11 2¯0) InGaN quantum wells

The morphology of silicon nanowires grown in the presence of trimethylaluminium

Theoretical and experimental analysis of the photoluminescence and photoluminescence excitation spectroscopy spectra of m-plane InGaN/GaN quantum wells

What is red? On the chromaticity of orange-red InGaN/GaN based LEDs