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BAlN thin layers for deep UV applications

Control of the Mechanical Adhesion of III-V Materials Grown on Layered h-BN

scientific article published on 25 November 2020

Emission wavelength red-shift by using “semi-bulk” InGaN buffer layer in InGaN/InGaN multiple-quantum-well

Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE.

artículo científico publicado en 2017

Gas sensors boosted by two-dimensional h-BN enabled transfer on thin substrate foils: towards wearable and portable applications

artículo científico publicado en 2017

High energy density in artificial heterostructures through relaxation time modulation

artículo científico publicado en 2024

High quality thick InGaN nanostructures grown by nanoselective area growth for new generation photovoltaic devices

Investigation of new approaches for InGaN growth with high indium content for CPV application

Large-Area Two-Dimensional Layered Hexagonal Boron Nitride Grown on Sapphire by Metalorganic Vapor Phase Epitaxy

Microstructural and electrical investigation of Pd/Au ohmic contact on p-GaN

Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask

article by Renaud Puybaret et al published 7 March 2016 in Applied Physics Letters

Nanoselective area growth of defect-free thick indium-rich InGaN nanostructures on sacrificial ZnO templates

artículo científico publicado en 2017

Role of V-pits in the performance improvement of InGaN solar cells

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