Lista de obras - Sylwester Porowski - Dominio Público Uruguay

Anomalous behaviour of the photoluminescence from GaN/AlGaN quantum wells

Carrier localization of as-grown n-type gallium nitride under large hydrostatic pressure

artículo científico publicado en 1996

Coupling of LO Phonons to Excitons in GaN

artículo científico publicado en 1996

Dynamics of trapping on donors and relaxation of the B-exciton in GaN

artículo científico publicado en 2003

Effect of pressure on exciton energies of homoepitaxial GaN

artículo científico publicado en 1998

Epitaxy on GaN bulk crystals

Exciton region reflectance of homoepitaxial GaN layers

artículo científico publicado en 1996

Excitonic Thermalization and Recombination in Homoepitaxial Gallium Nitride

artículo científico publicado en 1999

Experimental and theoretical evidence of the temperature-induced wurtzite to rocksalt phase transition in GaN under high pressure

artículo científico publicado en 2020

Fine structure of effective mass acceptors in gallium nitride

artículo científico publicado en 2003

Growth and characterization of AlInN/GaInN quantum wells for high-speed intersubband devices at telecommunication wavelengths

artículo científico publicado en 2006

Growth of thin AlInN∕GaInN quantum wells for applications to high-speed intersubband devices at telecommunication wavelengths

artículo científico publicado en 2006

High-pressure EPR cavity

scientific article published on 01 March 1978

Highly reproducible, stable and multiply regenerated surface-enhanced Raman scattering substrate for biomedical applications

Impurity-Related Luminescence of Homoepitaxial GaN Studied with High Magnetic Fields

artículo científico publicado en 1998

InGaN laser diodes operating at 450–460 nm grown by rf-plasma MBE

Influence of Electric Field on Recombination Dynamics of Quantum Confined Carriers

Lattice parameters, density and thermal expansion of InN microcrystals grown by the reaction of nitrogen plasma with liquid indium

artículo científico publicado en 1999

Luminescence Dynamics of Exciton Replicas in Homoepitaxial GaN Layers

artículo científico publicado en 1997

Luminescence and reflectivity in the exciton region of homoepitaxial GaN layers grown on GaN substrates

artículo científico publicado en 1996

Morphological and structural characteristics of homoepitaxial GaN grown by metalorganic chemical vapour deposition (MOCVD)

artículo científico publicado en 1999

Lista de obras de Sylwester Porowski

Anomalous behaviour of the photoluminescence from GaN/AlGaN quantum wells

Carrier localization of as-grown n-type gallium nitride under large hydrostatic pressure

Coupling of LO Phonons to Excitons in GaN

Dynamics of trapping on donors and relaxation of the B-exciton in GaN

Effect of pressure on exciton energies of homoepitaxial GaN

Epitaxy on GaN bulk crystals

Exciton region reflectance of homoepitaxial GaN layers

Excitonic Thermalization and Recombination in Homoepitaxial Gallium Nitride

Experimental and theoretical evidence of the temperature-induced wurtzite to rocksalt phase transition in GaN under high pressure

Fine structure of effective mass acceptors in gallium nitride

Growth and characterization of AlInN/GaInN quantum wells for high-speed intersubband devices at telecommunication wavelengths

Growth of thin AlInN∕GaInN quantum wells for applications to high-speed intersubband devices at telecommunication wavelengths

High-pressure EPR cavity

Highly reproducible, stable and multiply regenerated surface-enhanced Raman scattering substrate for biomedical applications

Impurity-Related Luminescence of Homoepitaxial GaN Studied with High Magnetic Fields

InGaN laser diodes operating at 450–460 nm grown by rf-plasma MBE

Influence of Electric Field on Recombination Dynamics of Quantum Confined Carriers

Lattice parameters, density and thermal expansion of InN microcrystals grown by the reaction of nitrogen plasma with liquid indium

Luminescence Dynamics of Exciton Replicas in Homoepitaxial GaN Layers

Luminescence and reflectivity in the exciton region of homoepitaxial GaN layers grown on GaN substrates

Morphological and structural characteristics of homoepitaxial GaN grown by metalorganic chemical vapour deposition (MOCVD)

Nitride-based laser diodes grown by plasma-assisted molecular beam epitaxy

Optically pumped 500 nm InGaN green lasers grown by plasma-assisted molecular beam epitaxy

Polariton effects in reflectance and emission spectra of homoepitaxial GaN

Surface states on GaN()(1×1)––an angle-resolved photoemission study

Towards the identification of the dominant donor in GaN