Lista de obras - Ruth Pinacho - Dominio Público Uruguay

A DFT-Based Computational-Experimental Methodology for Synthetic Chemistry: Example of Application to the Catalytic Opening of Epoxides by Titanocene.

artículo científico publicado en 2017

A kinetic Monte Carlo annealing assessment of the dominant features from ion implant simulations

Atomistic Modeling of Defect Diffusion in SiGe

Atomistic modeling of defect diffusion and interdiffusion in SiGe heterostructures

Bimodal distribution of damage morphology generated by ion implantation

Carbon in silicon: Modeling of diffusion and clustering mechanisms

Comprehensive model of damage accumulation in silicon

Comprehensive modeling of ion-implant amorphization in silicon

Comprehensive, physically based modelling of As in Si

Current Capabilities and Future Prospects of Atomistic Process Simulation

Dose loss and segregation of boron and arsenic at the Si/SiO2 interface by atomistic kinetic Monte Carlo simulations

Fermi-level effects in semiconductor processing: A modeling scheme for atomistic kinetic Monte Carlo simulators

article published in 2005

Ion implant simulations: Kinetic Monte Carlo annealing assessment of the dominant features

Ion-beam amorphization of semiconductors: A physical model based on the amorphous pocket population

Ion-implant simulations: The effect of defect spatial correlation on damage accumulation

Mobile silicon di-interstitial: Surface, self-interstitial clustering, and transient enhanced diffusion phenomena

scholarly article in Physical Review B, vol. 68 no. 19, November 2003

Modeling arsenic deactivation through arsenic-vacancy clusters using an atomistic kinetic Monte Carlo approach

Modeling charged defects, dopant diffusion and activation mechanisms for TCAD simulations using kinetic Monte Carlo

artículo científico publicado en 2006

Physical atomistic kinetic Monte Carlo modeling of Fermi-level effects of species diffusing in silicon

scholarly article in Physical Review B, vol. 72 no. 3, July 2005

Physical modeling and implementation scheme of native defect diffusion and interdiffusion in SiGe heterostructures for atomistic process simulation

article published in 2011

Physical modeling of Fermi-level effects for decanano device process simulations

Physically based modeling of dislocation loops in ion implantation processing in silicon

Physically based modelling of damage, amorphization, and recrystallization for predictive device-size process simulation

Rotational Spectroscopy and Conformational Flexibility of 2‐Phenylethanethiol: The Dominant S−H⋅⋅⋅π Intramolecular Hydrogen Bond

Rotational spectra of tetracyclic quinolizidine alkaloids: does a water molecule flip sparteine?