(Invited) Locally Measuring the Adhesion of InP Membranes Directly Bonded on Silicon

An ultra-thin SiO2 ALD layer for void-free bonding of III–V material on silicon

Application of dilute boron B(Al,In,Ga)N alloys for UV light sources

Biperiodic nanostructured waveguides for wavelength-selectivity of hybrid photonic devices.

artículo científico publicado en 2015

Bonding mechanism of a yttrium iron garnet film on Si without the use of an intermediate layer

scholarly article by Konstantinos Pantzas et al published 6 October 2014 in Applied Physics Letters

Characteristics of the surface microstructures in thick InGaN layers on GaN

Chemical lift-off and direct wafer bonding of GaN/InGaN P–I–N structures grown on ZnO

Comparison of chemical and laser lift-off for the transfer of InGaN-based p-i-n junctions from sapphire to glass substrates

Deep structural analysis of novel BGaN material layers grown by MOVPE

Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications

Evaluation of the surface bonding energy of an InP membrane bonded oxide-free to Si using instrumented nanoindentation

Instrumented nanoindentation and scanning electron transmission microscopy applied to the study of the adhesion of InP membranes heteroepitaxially bonded to Si

article

Investigation of a relaxation mechanism specific to InGaN for improved MOVPE growth of nitride solar cell materials

article published in 2011

Link between crystal quality and electrical properties of metalorganic vapour phase epitaxy InxGa1−xN thin films

Locally measuring the adhesion of InP directly bonded on sub-100 nm patterned Si

artículo científico publicado en 2016

Mechanism of Ohmic Cr/Ni/Au contact formation on p-GaN

Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content

Modeling of polarization effects on n-GaN/i-InGaN/p-Gan solar cells with ultrathin GaN interlayers

Multilayered InGaN/GaN structure vs. single InGaN layer for solar cell applications: A comparative study

Nanometer-scale, quantitative composition mappings of InGaN layers from a combination of scanning transmission electron microscopy and energy dispersive x-ray spectroscopy

article

Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template

Nanoselective area growth and characterization of dislocation-free InGaN nanopyramids on AlN buffered Si(111) templates

Nondestructive Characterization of Residual Threading Dislocation Density in HgCdTe Layers Grown on CdZnTe by Liquid-Phase Epitaxy

Nondestructive three-dimensional imaging of crystal strain and rotations in an extended bonded semiconductor heterostructure

scholarly article in Physical Review B, vol. 92 no. 20, November 2015

Novel method for reclaim/reuse of bulk GaN substrates using sacrificial ZnO release layers

Polarization-Induced Electric Fields Make Robust n-GaN/i-InGaN/p-GaN Solar Cells

Role of compositional fluctuations and their suppression on the strain and luminescence of InGaN alloys

article

Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE

Sharpening the Interfaces of Axial Heterostructures in Self-Catalyzed AlGaAs Nanowires: Experiment and Theory

artículo científico publicado en 2016

Single-crystal nanopyramidal BGaN by nanoselective area growth on AlN/Si(111) and GaN templates

scientific article published on 15 February 2016

Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire

article

Sub-nanometrically resolved chemical mappings of quantum-cascade laser active regions

Suppression of crack generation in AlGaN/GaN distributed Bragg reflectors grown by MOVPE

Void-free direct bonding of InP to Si: Advantages of low H-content and ozone activation