A Novel SR Latch Device Realized by Integration of Three-Terminal Ballistic Junctions in InGaAs/InP

A sequential logic device realized by integration of in-plane gate transistors in InGaAs∕InP

article

Carbohydrate-based block copolymer systems: directed self-assembly for nanolithography applications

artículo científico publicado en 2017

Digital in-line holography on amplitude and phase objects prepared with electron beam lithography.

artículo científico publicado en 2012

Dynamic guiding of motor-driven microtubules on electrically heated, smart polymer tracks

artículo científico publicado en 2013

Efficient methods of nanoimprint stamp cleaning based on imprint self-cleaning effect

artículo científico publicado en 2011

Electrical Properties of Self-Assembled Branched InAs Nanowire Junctions

artículo científico publicado en 2008

Enhanced anisotropic effective g factors of an Al0.25Ga0.75N/GaN heterostructure based quantum point contact

artículo científico publicado en 2013

Fabrication and characterization of bilayer metal wire-grid polarizer using nanoimprint lithography on flexible plastic substrate

Fabrication of bottle-shaped nanochannels in fused silica using a self-closing effect

Frequency mixing and phase detection functionalities of three-terminal ballistic junctions

Gate-defined double quantum dot with integrated charge sensors realized in InGaAs/InP by incorporating a high-κ dielectric

Gate-defined quantum devices realized on an InGaAs/InP heterostructure by incorporating a high-κ dielectric material

Gate-defined quantum-dot devices realized in InGaAs/InP by incorporating a HfO2 layer as gate dielectric

High-fluence Co implantation in Si, SiO2/Si and Si3N4/Si

High-fluence Co implantation in Si, SiO2/Si and Si3N4/Si

High-fluence Co implantation in Si, SiO2/Si and Si3N4/Si

III–V Nanowire Synthesis by Use of Electrodeposited Gold Particles

artículo científico publicado en 2014

Lithography of high spatial density biosensor structures with sub-100 nm spacing by MeV proton beam writing with minimal proximity effect

Memristive and Memcapacitive Characteristics of a Au/Ti– $\hbox{HfO}_{2}$-InP/InGaAs Diode

Metal nanoelectrodes for molecular transistor and investigation of electron transport in molecular systems

article

Microwave detection at 110 Ghz by nanowires with broken symmetry.

artículo científico publicado en 2005

Nanoimprint lithography for the fabrication of interdigitated cantilever arrays

Nonlinear electrical properties of Si three-terminal junction devices

Scalable, high performance, enzymatic cathodes based on nanoimprint lithography

artículo científico publicado en 2015

Strategies to obtain pattern fidelity in nanowire growth from large-area surfaces patterned using nanoimprint lithography

Strong Schottky barrier reduction at Au-catalyst/GaAs-nanowire interfaces by electric dipole formation and Fermi-level unpinning

artículo científico publicado en 2014

The influence of nanoparticles on enzymatic bioelectrocatalysis

scholarly article in RSC Advances, vol. 4 no. 72, 2014

Transparent and flexible, nanostructured and mediatorless glucose/oxygen enzymatic fuel cells

Transport properties of three-terminal ballistic junctions realized by focused ion beam enhanced etching in InGaAs/InP