Lista de obras - Piotr Perlin - Dominio Público Uruguay

450 nm (Al,In)GaN optical amplifier with double ‘j-shape’ waveguide for master oscillator power amplifier systems

artículo científico publicado en 2018

Above 25 nm emission wavelength shift in blue-violet InGaN quantum wells induced by GaN substrate misorientation profiling: towards broad-band superluminescent diodes

artículo científico publicado en 2020

AlGaN cladding-free 482 nm continuous wave nitride laser diodes grown by plasma-assisted molecular beam epitaxy

AlGaN-Free Laser Diodes by Plasma-Assisted Molecular Beam Epitaxy

Band-to-band character of photoluminescence from InN and In-rich InGaN revealed by hydrostatic pressure studies

artículo científico publicado en 2006

Comparison study of photoluminescence from InGaN/GaN multiple quantum wells and InGaN epitaxial layers under large hydrostatic pressure

Distributed-feedback blue laser diode utilizing a tunnel junction grown by plasma-assisted molecular beam epitaxy

artículo científico publicado en 2020

Effect of hydrogen during growth of quantum barriers on the properties of InGaN quantum wells

Effective mass and conduction band dispersion of GaAsN/GaAs quantum wells

Elimination of leakage of optical modes to GaN substrate in nitride laser diodes using a thick InGaN waveguide

Enhancement of optical confinement factor by InGaN waveguide in blue laser diodes grown by plasma-assisted molecular beam epitaxy

Epitaxy on GaN bulk crystals

Erratum: “Semipolar ( 202¯1) GaN laser diodes operating at 388 nm grown by plasma-assisted molecular beam epitaxy” [J. Vac. Sci. Technol., B 32, 02C115 (2014)]

scholarly article published in Journal of vacuum science and technology. B, Nanotechnology & microelectronics : materials, processing, measurement, & phenomena : JVST B

Erratum: “Strong electric field and nonuniformity effects in GaN∕AlN quantum dots revealed by high pressure studies” [Appl. Phys. Lett. 89, 051902 (2006)]

scholarly article published in Applied Physics Letters

Extremely long lifetime of III-nitride laser diodes grown by plasma assisted molecular beam epitaxy

artículo científico publicado en 2019

GaN substrates with variable vicinal angles for laser diode applications

Graded-index separate confinement heterostructure InGaN laser diodes

artículo científico publicado en 2013

High optical power ultraviolet superluminescent InGaN diodes

High power nitride laser diodes grown by plasma assisted molecular beam epitaxy

High-power pulse-current-operated violet light emitting lasers grown on bulk GaN substrates

Hydrogen diffusion in GaN:Mg and GaN:Si

Hydrostatic pressure: a unique tool in studies of quantum structures and light emitting devices based on group-III nitrides

article published in 2006

InGaN blue light emitting micro-diodes with current path defined by tunnel junction

scientific article published on 01 August 2020

InGaN mini-laser diode arrays with cw output power of 500 mW

article

Influence of hydrogen and TMIn on indium incorporation in MOVPE growth of InGaN layers

artículo científico publicado en 2014

Influence of hydrogen pre-growth flow on indium incorporation into InGaN layers

Influence of the growth method on degradation of InGaN laser diodes

Interband optical absorption in free standing layer of Ga0.96In0.04As0.99N0.01

article published in 2000

Kinetics of the radiative and nonradiative recombination in polar and semipolar InGaN quantum wells

scientific article published on 27 January 2020

Negative-T0 InGaN laser diodes and their degradation

New approach to cathodoluminescence studies in application to InGaN/GaN laser diode degradation.

artículo científico publicado en 2009

Nitride Semiconductors

Nitride superluminescent diodes with broadened emission spectrum fabricated using laterally patterned substrate.

artículo científico publicado en 2016

Nitride-based laser diodes and superluminescent diodes

article

Observation of localization effects in InGaN/GaN quantum structures by means of the application of hydrostatic pressure

artículo científico publicado en 2004

Optically pumped 500 nm InGaN green lasers grown by plasma-assisted molecular beam epitaxy

Properties of InGaN/GaN multiquantum wells grown on semipolar (20-21) substrates with different miscuts

Publisher’s Note: “Ultraviolet laser diodes grown on semipolar (202¯1) GaN substrates by plasma-assisted molecular beam epitaxy” [Appl. Phys. Lett. 102, 251101 (2013)]

Role of the electron blocking layer in the graded-index separate confinement heterostructure nitride laser diodes

Semipolar (202¯1) GaN laser diodes operating at 388 nm grown by plasma-assisted molecular beam epitaxy

Strong electric field and nonuniformity effects in GaN∕AlN quantum dots revealed by high pressure studies

Suppression of extended defects propagation in a laser diodes structure grown on (20-21) GaN

artículo científico publicado en 2016

Surface Photochemical Corrosion as a Mechanism for Fast Degradation of InGaN UV Laser Diodes

artículo científico publicado en 2020

Switching of exciton character in double InGaN/GaN quantum wells

scholarly article in Physical Review B, vol. 98 no. 16, October 2018

Thermal properties of InGaN laser diodes and arrays

True-Blue Nitride Laser Diodes Grown by Plasma-Assisted Molecular Beam Epitaxy

article by Czeslaw Skierbiszewski et al published 19 October 2012 in Applied Physics Express

True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy

article by Czeslaw Skierbiszewski et al published 9 February 2018 in Applied Physics Express

True-blue nitride laser diodes grown by plasma assisted MBE on low dislocation density GaN substrates

scholarly article published 4 March 2013

Ultraviolet laser diodes grown on semipolar (202¯1) GaN substrates by plasma-assisted molecular beam epitaxy

article published in 2013

Visible light communications using a directly modulated 422 nm GaN laser diode.

artículo científico publicado en 2013

[Home maintenance and monitoring of a patient with respiratory insufficiency. Role of the technician]

scientific article published on 01 February 1984

Lista de obras de Piotr Perlin

450 nm (Al,In)GaN optical amplifier with double ‘j-shape’ waveguide for master oscillator power amplifier systems

Above 25 nm emission wavelength shift in blue-violet InGaN quantum wells induced by GaN substrate misorientation profiling: towards broad-band superluminescent diodes

AlGaN cladding-free 482 nm continuous wave nitride laser diodes grown by plasma-assisted molecular beam epitaxy

AlGaN-Free Laser Diodes by Plasma-Assisted Molecular Beam Epitaxy

Band-to-band character of photoluminescence from InN and In-rich InGaN revealed by hydrostatic pressure studies

Comparison study of photoluminescence from InGaN/GaN multiple quantum wells and InGaN epitaxial layers under large hydrostatic pressure

Distributed-feedback blue laser diode utilizing a tunnel junction grown by plasma-assisted molecular beam epitaxy

Effect of hydrogen during growth of quantum barriers on the properties of InGaN quantum wells

Effective mass and conduction band dispersion of GaAsN/GaAs quantum wells

Elimination of leakage of optical modes to GaN substrate in nitride laser diodes using a thick InGaN waveguide

Enhancement of optical confinement factor by InGaN waveguide in blue laser diodes grown by plasma-assisted molecular beam epitaxy

Epitaxy on GaN bulk crystals

Erratum: “Semipolar ( 202¯1) GaN laser diodes operating at 388 nm grown by plasma-assisted molecular beam epitaxy” [J. Vac. Sci. Technol., B 32, 02C115 (2014)]

Erratum: “Strong electric field and nonuniformity effects in GaN∕AlN quantum dots revealed by high pressure studies” [Appl. Phys. Lett. 89, 051902 (2006)]

Extremely long lifetime of III-nitride laser diodes grown by plasma assisted molecular beam epitaxy

GaN substrates with variable vicinal angles for laser diode applications

Graded-index separate confinement heterostructure InGaN laser diodes

High optical power ultraviolet superluminescent InGaN diodes

High power nitride laser diodes grown by plasma assisted molecular beam epitaxy

High-power pulse-current-operated violet light emitting lasers grown on bulk GaN substrates

Hydrogen diffusion in GaN:Mg and GaN:Si

Hydrostatic pressure: a unique tool in studies of quantum structures and light emitting devices based on group-III nitrides

InGaN blue light emitting micro-diodes with current path defined by tunnel junction

InGaN mini-laser diode arrays with cw output power of 500 mW

Influence of hydrogen and TMIn on indium incorporation in MOVPE growth of InGaN layers

Influence of hydrogen pre-growth flow on indium incorporation into InGaN layers

Influence of the growth method on degradation of InGaN laser diodes

Interband optical absorption in free standing layer of Ga0.96In0.04As0.99N0.01

Kinetics of the radiative and nonradiative recombination in polar and semipolar InGaN quantum wells

Negative-T0 InGaN laser diodes and their degradation

New approach to cathodoluminescence studies in application to InGaN/GaN laser diode degradation.

Nitride Semiconductors

Nitride Semiconductors

Nitride superluminescent diodes with broadened emission spectrum fabricated using laterally patterned substrate.

Nitride-based laser diodes and superluminescent diodes

Observation of localization effects in InGaN/GaN quantum structures by means of the application of hydrostatic pressure

Optically pumped 500 nm InGaN green lasers grown by plasma-assisted molecular beam epitaxy

Properties of InGaN/GaN multiquantum wells grown on semipolar (20-21) substrates with different miscuts

Publisher’s Note: “Ultraviolet laser diodes grown on semipolar (202¯1) GaN substrates by plasma-assisted molecular beam epitaxy” [Appl. Phys. Lett. 102, 251101 (2013)]

Role of the electron blocking layer in the graded-index separate confinement heterostructure nitride laser diodes

Semipolar (202¯1) GaN laser diodes operating at 388 nm grown by plasma-assisted molecular beam epitaxy

Strong electric field and nonuniformity effects in GaN∕AlN quantum dots revealed by high pressure studies

Suppression of extended defects propagation in a laser diodes structure grown on (20-21) GaN

Surface Photochemical Corrosion as a Mechanism for Fast Degradation of InGaN UV Laser Diodes

Switching of exciton character in double InGaN/GaN quantum wells

Thermal properties of InGaN laser diodes and arrays

True-Blue Nitride Laser Diodes Grown by Plasma-Assisted Molecular Beam Epitaxy

True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy

True-blue nitride laser diodes grown by plasma assisted MBE on low dislocation density GaN substrates

Ultraviolet laser diodes grown on semipolar (202¯1) GaN substrates by plasma-assisted molecular beam epitaxy

Visible light communications using a directly modulated 422 nm GaN laser diode.

[Home maintenance and monitoring of a patient with respiratory insufficiency. Role of the technician]