(Invited) Vanadium Oxide as a Memory Material

Atomic layer deposition of ruthenium at 100 °C using the RuO4-precursor and H2

Development of ALD HfZrO

Development of ALD HfZrO[sub x] with TDEAH/TDEAZ and H[sub 2]O

Growth evolution and characterization of ultra-thin CoGe2 films synthesized via a catalytic solid–vapour reaction technique

High-k Dielectrics and Metal Gates for Future Generation Memory Devices

High-k dielectrics for future generation memory devices (Invited Paper)

article

Implementation of Atomic Layer Deposition in Advanced Semiconductor Processes

Integration of SrBi2Ta2O9 thin films for high density ferroelectric random access memory

Low temperature chemical vapour synthesis of Cu3Ge thin films for interconnect applications

Low temperature thermal and plasma enhanced atomic layer deposition of ruthenium using RuO 4 and H 2 /H 2 -plasma

Low-loss amorphous silicon-on-insulator technology for photonic integrated circuitry

article published in 2009

Metal-Insulator Transition in ALD VO2Ultrathin Films and Nanoparticles: Morphological Control

Near room temperature plasma enhanced atomic layer deposition of ruthenium using the RuO4-precursor and H2-plasma

NiO Thin Films Synthesized by Atomic Layer Deposition using Ni(dmamb)2 and Ozone as Precursors

Phase Formation and Morphology of Nickel Silicide Thin Films Synthesized by Catalyzed Chemical Vapor Reaction of Nickel with Silane

scholarly article by Antony Premkumar Peter et al published 22 December 2014 in Chemistry of Materials

Selective chemical vapor synthesis of Cu3Ge: Process optimization and film properties

Switching mechanism in two-terminal vanadium dioxide devices

scientific article published on 27 March 2015

The Deposition of Polycrystalline SiGe with Different Ge Precursors

artículo científico publicado en 2006

Thermal trimming and tuning of hydrogenated amorphous silicon nanophotonic devices

Ultrathin NiGe Films Prepared via Catalytic Solid–Vapor Reaction of Ni with GeH4

artículo científico publicado en 2013