Lista de obras - Lan Fu - Dominio Público Uruguay

An ion-implanted InP receiver for polarization resolved terahertz spectroscopy.

artículo científico publicado en 2007

Broadband Phase-Sensitive Single InP Nanowire Photoconductive Terahertz Detectors.

artículo científico publicado en 2016

Colossal Dielectric Permittivity in (Nb+Al) Codoped Rutile TiO2 Ceramics: Compositional Gradient and Local Structure

article

Doping-enhanced radiative efficiency enables lasing in unpassivated GaAs nanowires

artículo científico publicado en 2016

Effect of GaP strain compensation layers on rapid thermally annealed InGaAs∕GaAs quantum dot infrared photodetectors grown by metal-organic chemical-vapor deposition

Effects of rapid thermal annealing on device characteristics of InGaAs∕GaAs quantum dot infrared photodetectors

artículo científico publicado en 2006

Enhancement of radiation tolerance in GaAs/AlGaAs core-shell and InP nanowires.

artículo científico publicado en 2018

Extraordinarily Bound Quasi-One-Dimensional Trions in Two-Dimensional Phosphorene Atomic Semiconductors

artículo científico publicado en 2015

Extreme absorption enhancement in ZnTe:O/ZnO intermediate band core-shell nanowires by interplay of dielectric resonance and plasmonic bowtie nanoantennas

artículo científico publicado en 2017

Ferroelectric-Driven Exciton and Trion Modulation in Monolayer Molybdenum and Tungsten Diselenides

scientific article published on 01 May 2019

High-Efficiency Monolayer Molybdenum Ditelluride Light Emitting Diode and Photodetector

artículo científico publicado en 2018

High-Efficiency Solar Cells from Extremely Low Minority Carrier Lifetime Substrates Using Radial Junction Nanowire Architecture

scientific article published on 27 September 2019

Improved Performance of GaAs-Based Terahertz Emitters via Surface Passivation and Silicon Nitride Encapsulation

Influence of rapid thermal annealing on a 30 stack InAs/GaAs quantum dot infrared photodetector

Influence of surface passivation on ultrafast carrier dynamics and terahertz radiation generation in GaAs

Large-Scale Statistics for Threshold Optimization of Optically Pumped Nanowire Lasers.

artículo científico publicado en 2017

Liquid-Metal Synthesized Ultrathin SnS Layers for High-Performance Broadband Photodetectors

scientific article published on 22 September 2020

Low-Voltage High-Performance UV Photodetectors: An Interplay between Grain Boundaries and Debye Length.

artículo científico publicado en 2016

Merged beam laser design for reduction of gain-saturation and two-photon absorption in high power single mode semiconductor lasers

artículo científico publicado en 2013

Molecule-Induced Conformational Change in Boron Nitride Nanosheets with Enhanced Surface Adsorption

scholarly article

Multiple Wavelength InGaAs Quantum Dot Lasers Using Ion Implantation Induced Intermixing.

artículo científico publicado en 2007

Multiwavelength Single Nanowire InGaAs/InP Quantum Well Light-Emitting Diodes

scientific article published on 03 June 2019

Nano Au-decorated boron nitride nanotubes: Conductance modification and field-emission enhancement

scholarly article

Nanowire Quantum Dot Surface Engineering for High Temperature Single Photon Emission

artículo científico publicado en 2019

Periodic dielectric structures for light-trapping in InGaAs/GaAs quantum well solar cells

scientific article published on 01 May 2013

Photoconductive response correction for detectors of terahertz radiation

Quantum dots-in-a-well infrared photodetectors grown by MOCVD

Radiation effects on GaAs/AlGaAs core/shell ensemble nanowires and nanowire infrared photodetectors.

artículo científico publicado en 2017

Reply to Comment on Water Droplet Motion Control on Superhydrophobic Surfaces: Exploiting the Wenzel-to-Cassie Transition

scientific article published on 18 October 2011

Review on III-V Semiconductor Single Nanowire-Based Room Temperature Infrared Photodetectors

scientific article published on 19 March 2020

Room temperature GaAsSb single nanowire infrared photodetectors

artículo científico publicado en 2015

Selective Intermixing of InGaAs/GaAs Quantum Dot Infrared Photodetectors

article published in 2011

Selective-area epitaxy of pure wurtzite InP nanowires: high quantum efficiency and room-temperature lasing

artículo científico publicado en 2014

Simultaneous Selective-Area and Vapor-Liquid-Solid Growth of InP Nanowire Arrays

artículo científico publicado en 2016

Single n+-i-n+ InP nanowires for highly sensitive terahertz detection

artículo científico publicado en 2017

Single nanowire green InGaN/GaN light emitting diodes

artículo científico publicado en 2016

Single nanowire photoconductive terahertz detectors.

artículo científico publicado en 2014

Spatially Resolved Doping Concentration and Nonradiative Lifetime Profiles in Single Si-Doped InP Nanowires Using Photoluminescence Mapping

artículo científico publicado en 2015

Suppression of interdiffusion in GaAs/AlGaAs quantum-well structure capped with dielectric films by deposition of gallium oxide

THz Emitters and Detectors Based on Ion Implanted III-V Semiconductors

The influence of doping on the device characteristics of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors

scientific article published on 01 June 2010

The use of strain compensation layers in the growth of stacked quantum dot structures

Three-dimensional cross-nanowire networks recover full terahertz state

artículo científico publicado en 2020

Three-dimensional in situ photocurrent mapping for nanowire photovoltaics

artículo científico publicado en 2013

Three-dimensional nano-heterojunction networks: a highly performing structure for fast visible-blind UV photodetectors

artículo científico publicado en 2017

Tunable Polarity in a III-V Nanowire by Droplet Wetting and Surface Energy Engineering

artículo científico publicado en 2015

Ultraporous Electron-Depleted ZnO Nanoparticle Networks for Highly Sensitive Portable Visible-Blind UV Photodetectors

artículo científico publicado en 2015

Ultrasensitive Mid-wavelength Infrared Photodetection Based on a Single InAs Nanowire

scientific article published on 04 March 2019

Vertically Emitting Indium Phosphide Nanowire Lasers

artículo científico publicado en 2018

Water droplet motion control on superhydrophobic surfaces: exploiting the Wenzel-to-Cassie transition.

artículo científico publicado en 2011

Lista de obras de Lan Fu

An ion-implanted InP receiver for polarization resolved terahertz spectroscopy.

Broadband Phase-Sensitive Single InP Nanowire Photoconductive Terahertz Detectors.

Colossal Dielectric Permittivity in (Nb+Al) Codoped Rutile TiO2 Ceramics: Compositional Gradient and Local Structure

Doping-enhanced radiative efficiency enables lasing in unpassivated GaAs nanowires

Effect of GaP strain compensation layers on rapid thermally annealed InGaAs∕GaAs quantum dot infrared photodetectors grown by metal-organic chemical-vapor deposition

Effects of rapid thermal annealing on device characteristics of InGaAs∕GaAs quantum dot infrared photodetectors

Enhancement of radiation tolerance in GaAs/AlGaAs core-shell and InP nanowires.

Extraordinarily Bound Quasi-One-Dimensional Trions in Two-Dimensional Phosphorene Atomic Semiconductors

Extreme absorption enhancement in ZnTe:O/ZnO intermediate band core-shell nanowires by interplay of dielectric resonance and plasmonic bowtie nanoantennas

Ferroelectric-Driven Exciton and Trion Modulation in Monolayer Molybdenum and Tungsten Diselenides

High-Efficiency Monolayer Molybdenum Ditelluride Light Emitting Diode and Photodetector

High-Efficiency Solar Cells from Extremely Low Minority Carrier Lifetime Substrates Using Radial Junction Nanowire Architecture

Improved Performance of GaAs-Based Terahertz Emitters via Surface Passivation and Silicon Nitride Encapsulation

Influence of rapid thermal annealing on a 30 stack InAs/GaAs quantum dot infrared photodetector

Influence of surface passivation on ultrafast carrier dynamics and terahertz radiation generation in GaAs

Large-Scale Statistics for Threshold Optimization of Optically Pumped Nanowire Lasers.

Liquid-Metal Synthesized Ultrathin SnS Layers for High-Performance Broadband Photodetectors

Low-Voltage High-Performance UV Photodetectors: An Interplay between Grain Boundaries and Debye Length.

Merged beam laser design for reduction of gain-saturation and two-photon absorption in high power single mode semiconductor lasers

Molecule-Induced Conformational Change in Boron Nitride Nanosheets with Enhanced Surface Adsorption

Multiple Wavelength InGaAs Quantum Dot Lasers Using Ion Implantation Induced Intermixing.

Multiwavelength Single Nanowire InGaAs/InP Quantum Well Light-Emitting Diodes

Nano Au-decorated boron nitride nanotubes: Conductance modification and field-emission enhancement

Nanowire Quantum Dot Surface Engineering for High Temperature Single Photon Emission

Periodic dielectric structures for light-trapping in InGaAs/GaAs quantum well solar cells

Photoconductive response correction for detectors of terahertz radiation

Quantum dots-in-a-well infrared photodetectors grown by MOCVD

Radiation effects on GaAs/AlGaAs core/shell ensemble nanowires and nanowire infrared photodetectors.

Reply to Comment on Water Droplet Motion Control on Superhydrophobic Surfaces: Exploiting the Wenzel-to-Cassie Transition

Review on III-V Semiconductor Single Nanowire-Based Room Temperature Infrared Photodetectors

Room temperature GaAsSb single nanowire infrared photodetectors

Selective Intermixing of InGaAs/GaAs Quantum Dot Infrared Photodetectors

Selective-area epitaxy of pure wurtzite InP nanowires: high quantum efficiency and room-temperature lasing

Simultaneous Selective-Area and Vapor-Liquid-Solid Growth of InP Nanowire Arrays

Single n+-i-n+ InP nanowires for highly sensitive terahertz detection

Single nanowire green InGaN/GaN light emitting diodes

Single nanowire photoconductive terahertz detectors.

Spatially Resolved Doping Concentration and Nonradiative Lifetime Profiles in Single Si-Doped InP Nanowires Using Photoluminescence Mapping

Suppression of interdiffusion in GaAs/AlGaAs quantum-well structure capped with dielectric films by deposition of gallium oxide

THz Emitters and Detectors Based on Ion Implanted III-V Semiconductors

The influence of doping on the device characteristics of In0.5Ga0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors

The use of strain compensation layers in the growth of stacked quantum dot structures

Three-dimensional cross-nanowire networks recover full terahertz state

Three-dimensional in situ photocurrent mapping for nanowire photovoltaics

Three-dimensional nano-heterojunction networks: a highly performing structure for fast visible-blind UV photodetectors

Tunable Polarity in a III-V Nanowire by Droplet Wetting and Surface Energy Engineering

Ultraporous Electron-Depleted ZnO Nanoparticle Networks for Highly Sensitive Portable Visible-Blind UV Photodetectors

Ultrasensitive Mid-wavelength Infrared Photodetection Based on a Single InAs Nanowire

Vertically Emitting Indium Phosphide Nanowire Lasers

Water droplet motion control on superhydrophobic surfaces: exploiting the Wenzel-to-Cassie transition.