Lista de obras - Tim D. Veal - Dominio Público Uruguay

Band Alignments, Band Gap, Core Levels, and Valence Band States in Cu3BiS3 for Photovoltaics

artículo científico publicado en 2019

Band anticrossing in GaNxSb1−x

artículo científico publicado en 2006

Band gap reduction in GaNSb alloys due to the anion mismatch

artículo científico publicado en 2005

Band gap reduction in InNxSb1-x alloys: Optical absorption, k · P modeling, and density functional theory

Bandgap and effective mass of epitaxial cadmium oxide

Core Levels, Band Alignments, and Valence-Band States in CuSbS2 for Solar Cell Applications

artículo científico publicado en 2017

Direct Measurements of Fermi Level Pinning at the Surface of Intrinsically n-Type InGaAs Nanowires.

artículo científico publicado en 2016

Giant reduction of InN surface electron accumulation: compensation of surface donors by Mg dopants

artículo científico publicado en 2012

Graphitic platform for self-catalysed InAs nanowires growth by molecular beam epitaxy

artículo científico publicado en 2014

How Oxygen Exposure Improves the Back Contact and Performance of Antimony Selenide Solar Cells

scientific article published on 10 November 2020

Influence of Polymorphism on the Electronic Structure of Ga<sub>2</sub>O<sub>3</sub>

artículo científico publicado en 2020

N incorporation and associated localized vibrational modes in GaSb

scholarly article in Physical Review B, vol. 89 no. 1, January 2014

Negative band gaps in dilute InNxSb1-x alloys

artículo científico publicado en 2004

Optimization of self-catalyzed InAs Nanowires on flexible graphite for photovoltaic infrared photodetectors.

artículo científico publicado en 2017

Origin of High Mobility in Molybdenum-Doped Indium Oxide

article

Photoluminescence of InNAs alloys: S-shaped temperature dependence and conduction-band nonparabolicity

scholarly article in Physical Review B, vol. 76 no. 7, August 2007

Photoluminescence spectroscopy of bandgap reduction in dilute InNAs alloys

Quantized electron accumulation states in indium nitride studied by angle-resolved photoemission spectroscopy

artículo científico publicado en 2006

Realization of Vertically Aligned, Ultrahigh Aspect Ratio InAsSb Nanowires on Graphite

artículo científico publicado en 2015

Sb-Induced Phase Control of InAsSb Nanowires Grown by Molecular Beam Epitaxy

artículo científico publicado en 2015

Surface Band-Gap Narrowing in Quantized Electron Accumulation Layers

artículo científico publicado en 2010

Surface Structure and Electronic Properties of In2O3(111) Single-Crystal Thin Films Grown on Y-Stabilized ZrO2(111)

Surface electron accumulation and the charge neutrality level in In2O3

scientific article published on 11 September 2008

Temperature dependence of the direct bandgap and transport properties of CdO

The donor nature of muonium in undoped, heavily n-type and p-type InAs

artículo científico publicado en 2009

Thickness dependence of the strain, band gap and transport properties of epitaxial In2O3 thin films grown on Y-stabilised ZrO2(111).

artículo científico

Unintentional conductivity of indium nitride: transport modelling and microscopic origins ⬇️

artículo científico publicado el 29 de abril de 2009

Valence-band density of states and surface electron accumulation in epitaxialSnO2films

scholarly article in Physical Review B, vol. 90 no. 15, October 2014

Lista de obras de Tim D. Veal