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On the dc and noise properties of the gate current in epitaxial Ge p-channel metal oxide semiconductor field effect transistors with TiN∕TaN∕HfO2∕SiO2 gate stack

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Understanding and Optimization of Hot-Carrier Reliability in Germanium-on-Silicon pMOSFETs

scholarly article by Debabrata Maji et al published May 2009 in IEEE Transactions on Electron Devices

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