3190 – 3275 nm tuneable, room temperature, external cavity InAs/AlSb Quantum Cascade Laser

A low-threshold Sb-based edge-emitting semiconductor laser emitting at 2.26 μm

Apertureless scanning microscope probe as a detector of semiconductor laser emission

Conception and fabrication of InAs-based hot electron transistor

Continuous-wave operation of GaInAsSb-GaSb type-II quantum-well ridge-lasers

Continuous-wave operation of singlemode GaInAsSb lasers emitting near 2.2 [micro sign]m at Peltier temperatures

Controlling Polariton Coupling in Intersubband Microcavities

Creation of the cavity of the tunable whispering gallery modes mid infrared laser

Distributed feedback GaSb based laser diodes with buried grating: a new field of single-frequency sources from 2 to 3 µm for gas sensing applications

artículo científico publicado en 2015

Experimental study of transport in InAs Quantum Hot Electron Transistor

Generation of 170 Ghz optical sidebands of a single mode semiconductor laser by nonlinear intracavity interaction

Giant intersubband polariton splitting in InAs/AlSb microcavities

Half-disk laser: insight into the internal mode structure of laser resonators

artículo científico publicado en 2018

High temperature GaInSbAs/GaAlSbAs quantum well singlemode continuous wave lasers emitting near 2.3 [micro sign]m

High-density InSb-based quantum dots emitting in the mid-infrared

Improvement of Sb-based multiquantum well lasers by Coulomb enhancement

InAs-based distributed feedback quantum cascade lasers

InAs/AlSb quantum cascade lasers operating near 20 µm

InAs/GaSb short-period superlattice injection lasers operating in 2.5 [micro sign]m–3.5 [micro sign]m mid-infrared wavelength range

article published in 2007

InAs/GaSb/InSb short-period super-lattice diode lasers emitting near 3.3 [micro sign]m at room-temperature

InAs‐based quantum cascade lasers emitting close to 25 µm

InAs∕AlSb quantum cascade lasers operating at 6.7 [micro sign]m

Long Wavelength (λ > 17 µm) Distributed Feedback Quantum Cascade Lasers Operating in a Continuous Wave at Room Temperature

Long-infrared InAs-based quantum cascade lasers

Low-threshold laser diodes based on type-II GaInAsSb/GaSb quantum-wells operating at 2.36 [micro sign]m at room temperature

MBE growth of InAs/InAsSb/InAlAsSb “W” quantum well laser diodes emitting near 3μm

MBE growth of mid-IR diode lasers based on InAs/GaSb/InSb short-period superlattice active zones

Mid-IR lasing from highly tensile-strained, type II, GaInAs/GaSb quantum wells

Negative Differential Conductivity in InAs/AlSb Superlattices

New scanning probe microscopy near-field imaging method for laser radiation intensity mapping

Off-beam QEPAS sensor using an 11-μm DFB-QCL with an optimized acoustic resonator

scientific article published on 01 March 2019

Optical power detector with broad spectral coverage, high detectivity, and large dynamic range

Photoacoustic characteristics of carbon-based infrared absorbers

Powerful mid-infrared light emitting diodes for pollution monitoring

artículo científico publicado en 2002

Progress in Interband Cascade Lasers: From Edge Emitting Lasers to VCSELs

QUANTUM EFFICIENCY OF A 2-LEVEL InAs/AlSb QUANTUM CASCADE STRUCTURE

Quantum cascade lasers grown on silicon

Quantum cascade lasers grown on silicon.

artículo científico publicado en 2018

Room temperature GaInAsSb/GaSb quantum well laser for tunable diode laser absorption spectroscopy around 2.35 μm

Room temperature continuous wave operation of InAs-based quantum cascade lasers at 15 µm.

artículo científico publicado en 2016

Room temperature continuous wave operation of InAs/AlSb‐based quantum cascade laser at λ ∼11 µm

Sb-based monolithic VCSEL operating near 2.2 [micro sign]m at room temperature

Semiconductor lasers

Semiconductor mid-infrared lasers working at high temperature application to gas analysis

Shallow acceptor states in undoped GaSb

Short wavelength (=3.5–3.65 [micro sign]m) InAs/AlSb quantum cascade lasers

Short wavelength intersubband emission from InAs/AlSb quantum cascade structures

Staggered-lineup heterojunctions in the system of GaSbInAs

Strained InAs/Ga0.47In0.53As quantum-well heterostructures grown by molecular-beam epitaxy for long-wavelength laser applications

Strong optical coupling between semiconductor microdisk lasers: From whispering gallery modes to collective modes

Structure and Optical Properties of InGaAsBi with up to 7% Bismuth

Sub-ppb detection of benzene using cantilever-enhanced photoacoustic spectroscopy with a long-wavelength infrared quantum cascade laser

scientific article published on 01 November 2020

Tunability of antimonide-based semiconductor lasers diodes and experimental evaluation of the thermal resistance