Lista de obras -

A Parallel Sparse Linear Solver for Nearest-Neighbor Tight-Binding Problems

A Study of Alloyed Nanowires from Two Perspectives: Approximate Dispersion and Transmission

article

A multi-level parallel simulation approach to electron transport in nano-scale transistors

article

Accurate six-band nearest-neighbor tight-binding model for the π-bands of bulk graphene and graphene nanoribbons

article

Advancing nanoelectronic device modeling through peta-scale computing and deployment on nanoHUB

Atomic scale plasmonic devices

Atomistic Full-Band Design Study of InAs Band-to-Band Tunneling Field-Effect Transistors

article

Atomistic Modeling of Realistically Extended Semiconductor Devices with NEMO and OMEN

Atomistic full-band simulations of silicon nanowire transistors: Effects of electron-phonon scattering

article

Atomistic modeling of the phonon dispersion and lattice properties of free-standing (100) Si nanowires

Atomistic nanoelectronic device engineering with sustained performances up to 1.44 PFlop/s

Atomistic simulation of nanowires in thesp3d5s*tight-binding formalism: From boundary conditions to strain calculations

scholarly article in Physical Review B, vol. 74 no. 20, November 2006

Atomistic simulation of transport phenomena in nanoelectronic devices

artículo científico

Battery Performance: Design and Fabrication of Microspheres with Hierarchical Internal Structure for Tuning Battery Performance (Adv. Sci. 6/2015).

artículo científico publicado en 2015

Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells

Computational nanoelectronics research and education at nanoHUB.org

Computational study of heterojunction graphene nanoribbon tunneling transistors with p-d orbital tight-binding method

article

Current density and continuity in discretized models

Design and Fabrication of Microspheres with Hierarchical Internal Structure for Tuning Battery Performance

artículo científico publicado en 2015

Distributed non-equilibrium Green’s function algorithms for the simulation of nanoelectronic devices with scattering

Effects of interface roughness scattering on radio frequency performance of silicon nanowire transistors

article

Electronic structure and transmission characteristics of SiGe nanowires

article

EnergyDispersion Relations for Holes in Silicon Quantum Wells and Quantum Wires

Enhancement of thermoelectric efficiency by uniaxial tensile stress in n-type GaAs nanowires

From NEMO1D and NEMO3D to OMEN: Moving towards atomistic 3-D quantum transport in nano-scale semiconductors

scholarly article published December 2008

Full band atomistic modeling of homo-junction InGaAs band-to-band tunneling diodes including band gap narrowing

Full-band and atomistic simulation of n- and p-doped double-gate MOSFETs for the 22nm technology node

article published in 2008

Full-band and atomistic simulation of realistic 40 nm InAs HEMT

Fullband Study of Ultra-Scaled Electron and Hole SiGe Nanowire FETs

Giant quasiparticle bandgap modulation in graphene nanoribbons supported on weakly interacting surfaces

Influence of cross-section geometry and wire orientation on the phonon shifts in ultra-scaled Si nanowires

Investigation of In_xGa_{1-x}As Ultra-Thin-Body Tunneling FETs Using a Full-Band and Atomistic Approach

Leakage-Reduction Design Concepts for Low-Power Vertical Tunneling Field-Effect Transistors

Light from van der Waals quantum tunneling devices

artículo científico publicado en 2019

Lithiation of tin oxide: a computational study ⬇️

artículo científico publicado en 2014

Minimizing Self-Heating and Heat Dissipation in Ultrascaled Nanowire Transistors

artículo científico publicado en 2016

Modified valence force field approach for phonon dispersion: from zinc-blende bulk to nanowires

Multiband transmission calculations for nanowires using an optimized renormalization method

article

Multiscale Metrology and Optimization of Ultra-Scaled InAs Quantum Well FETs

scholarly article by Neerav Kharche et al published July 2011 in IEEE Transactions on Electron Devices

Numerical strategies towards peta-scale simulations of nanoelectronics devices

OMEN an Atomistic and Full-Band Quantum Transport Simulator for post-CMOS Nanodevices

On the Validity of the Top of the Barrier Quantum Transport Model for Ballistic Nanowire MOSFETs

Performance Comparisons of III–V and Strained-Si in Planar FETs and Nonplanar FinFETs at Ultrashort Gate Length (12 nm)

Performance analysis of statistical samples of graphene nanoribbon tunneling transistors with line edge roughness

article

Performance analysis of ultra-scaled InAs HEMTs

Performance comparisons of tunneling field-effect transistors made of InSb, Carbon, and GaSb-InAs broken gap heterostructures

article

Performance limitations of graphene nanoribbon tunneling FETS due to line edge roughness

Phonon-limited mobility and injection velocity in n- and p-doped ultrascaled nanowire field-effect transistors with different crystal orientations

article

Shape and orientation effects on the ballistic phonon thermal properties of ultra-scaled Si nanowires

Simulation of nanowire tunneling transistors: From the Wentzel–Kramers–Brillouin approximation to full-band phonon-assisted tunneling

article

Soft surfaces of nanomaterials enable strong phonon interactions

artículo científico publicado en 2016

Strain-induced, off-diagonal, same-atom parameters in empirical tight-binding theory suitable for [110] uniaxial strain applied to a silicon parametrization

scholarly article in Physical Review B, vol. 81 no. 12, March 2010

Sub-10 nm carbon nanotube transistor

artículo científico publicado en 2012

Surface and Orientation Dependence on Performance of Trigated Silicon Nanowire pMOSFETs

The Electronic Structure and Transmission Characteristics of Disordered AlGaAs Nanowires

Transport calculationof Semiconductor Nanowires Coupled to Quantum Well Reservoirs

Tuning Electron-Phonon Interactions in Nanocrystals through Surface Termination

artículo científico publicado en 2018

Lista de obras de

A Parallel Sparse Linear Solver for Nearest-Neighbor Tight-Binding Problems

A Study of Alloyed Nanowires from Two Perspectives: Approximate Dispersion and Transmission

A multi-level parallel simulation approach to electron transport in nano-scale transistors

Accurate six-band nearest-neighbor tight-binding model for the π-bands of bulk graphene and graphene nanoribbons

Advancing nanoelectronic device modeling through peta-scale computing and deployment on nanoHUB

Atomic scale plasmonic devices

Atomistic Full-Band Design Study of InAs Band-to-Band Tunneling Field-Effect Transistors

Atomistic Modeling of Realistically Extended Semiconductor Devices with NEMO and OMEN

Atomistic full-band simulations of silicon nanowire transistors: Effects of electron-phonon scattering

Atomistic modeling of the phonon dispersion and lattice properties of free-standing (100) Si nanowires

Atomistic nanoelectronic device engineering with sustained performances up to 1.44 PFlop/s

Atomistic simulation of nanowires in thesp3d5s*tight-binding formalism: From boundary conditions to strain calculations

Atomistic simulation of transport phenomena in nanoelectronic devices

Battery Performance: Design and Fabrication of Microspheres with Hierarchical Internal Structure for Tuning Battery Performance (Adv. Sci. 6/2015).

Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells

Computational nanoelectronics research and education at nanoHUB.org

Computational study of heterojunction graphene nanoribbon tunneling transistors with p-d orbital tight-binding method

Current density and continuity in discretized models

Current density and continuity in discretized models

Design and Fabrication of Microspheres with Hierarchical Internal Structure for Tuning Battery Performance

Distributed non-equilibrium Green’s function algorithms for the simulation of nanoelectronic devices with scattering

Effects of interface roughness scattering on radio frequency performance of silicon nanowire transistors

Electronic structure and transmission characteristics of SiGe nanowires

EnergyDispersion Relations for Holes in Silicon Quantum Wells and Quantum Wires

Enhancement of thermoelectric efficiency by uniaxial tensile stress in n-type GaAs nanowires

From NEMO1D and NEMO3D to OMEN: Moving towards atomistic 3-D quantum transport in nano-scale semiconductors

Full band atomistic modeling of homo-junction InGaAs band-to-band tunneling diodes including band gap narrowing

Full-band and atomistic simulation of n- and p-doped double-gate MOSFETs for the 22nm technology node

Full-band and atomistic simulation of realistic 40 nm InAs HEMT

Fullband Study of Ultra-Scaled Electron and Hole SiGe Nanowire FETs

Giant quasiparticle bandgap modulation in graphene nanoribbons supported on weakly interacting surfaces

Influence of cross-section geometry and wire orientation on the phonon shifts in ultra-scaled Si nanowires

Investigation of In_xGa_{1-x}As Ultra-Thin-Body Tunneling FETs Using a Full-Band and Atomistic Approach

Leakage-Reduction Design Concepts for Low-Power Vertical Tunneling Field-Effect Transistors

Light from van der Waals quantum tunneling devices

Lithiation of tin oxide: a computational study ⬇️

Minimizing Self-Heating and Heat Dissipation in Ultrascaled Nanowire Transistors

Modified valence force field approach for phonon dispersion: from zinc-blende bulk to nanowires

Multiband transmission calculations for nanowires using an optimized renormalization method

Multiscale Metrology and Optimization of Ultra-Scaled InAs Quantum Well FETs

Numerical strategies towards peta-scale simulations of nanoelectronics devices

OMEN an Atomistic and Full-Band Quantum Transport Simulator for post-CMOS Nanodevices

On the Validity of the Top of the Barrier Quantum Transport Model for Ballistic Nanowire MOSFETs

Performance Comparisons of III–V and Strained-Si in Planar FETs and Nonplanar FinFETs at Ultrashort Gate Length (12 nm)

Performance analysis of statistical samples of graphene nanoribbon tunneling transistors with line edge roughness

Performance analysis of ultra-scaled InAs HEMTs

Performance comparisons of tunneling field-effect transistors made of InSb, Carbon, and GaSb-InAs broken gap heterostructures

Performance limitations of graphene nanoribbon tunneling FETS due to line edge roughness

Phonon-limited mobility and injection velocity in n- and p-doped ultrascaled nanowire field-effect transistors with different crystal orientations

Shape and orientation effects on the ballistic phonon thermal properties of ultra-scaled Si nanowires

Simulation of nanowire tunneling transistors: From the Wentzel–Kramers–Brillouin approximation to full-band phonon-assisted tunneling

Soft surfaces of nanomaterials enable strong phonon interactions

Strain-induced, off-diagonal, same-atom parameters in empirical tight-binding theory suitable for [110] uniaxial strain applied to a silicon parametrization

Sub-10 nm carbon nanotube transistor

Surface and Orientation Dependence on Performance of Trigated Silicon Nanowire pMOSFETs

The Electronic Structure and Transmission Characteristics of Disordered AlGaAs Nanowires

Transport calculationof Semiconductor Nanowires Coupled to Quantum Well Reservoirs

Tuning Electron-Phonon Interactions in Nanocrystals through Surface Termination

Tuning lattice thermal conductance in ultra-scaled hollow SiNW: Role of porosity size, density and distribution