A Dy 2 O 3 -capped HfO 2 Dielectric and TaC x -based Metals Enabling Low-V t Single-Metal-Single-Dielectric Gate Stack

Anomalous positive-bias temperature instability of high-κ/metal gate nMOSFET devices with Dy 2 O 3 capping

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Nitrogen reactive ion etch processes for the selective removal of poly-(4-vinylpyridine) in block copolymer films

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Tuning PMOS Mo(O,N) metal gates to NMOS by addition of DyO capping layer