Lista de obras - Daniel Hofstetter - Dominio Público Uruguay

Active linewidth-narrowing of a mid-infrared quantum cascade laser without optical reference

artículo científico publicado en 2013

AlN/GaN-superlattice structures for the fabrication of intersubband detectors in the telecom wavelength range

Continuous Wave Operation of a Mid-Infrared Semiconductor Laser at Room Temperature ⬇️

artículo científico publicado el 20 de diciembre de 2001

Continuous-wave operation of far-infrared quantum cascade lasers

Coupling of intersubband transitions to zone-folded acoustic phonons in a GaN/AlN superlattice

scholarly article in Physical Review B, vol. 85 no. 15, April 2012

Electrically adjustable intersubband absorption of a GaN∕AlN superlattice grown on a transistorlike structure

GaN/AlN electro-optical modulator prototype at telecommunication wavelengths

scholarly article by E. Baumann et al published April 2007 in Physica Status Solidi C: Current Topics in Solid State Physics

GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance

article by P. K. Kandaswamy et al published November 2008 in Journal of Applied Physics

High frequency (f=2.37 GHz) room temperature operation of 1.55 [micro sign]m AlN∕GaN-based intersubband detector

article published in 2007

High frequency measurements on an AlN∕GaN-based intersubband detector at 1550 and 780nm

High-quality AlN∕GaN-superlattice structures for the fabrication of narrow-band 1.4 μm photovoltaic intersubband detectors

Intersubband Transition-Based Processes and Devices in AlN/GaN-Based Heterostructures

article

Intersubband spectroscopy probing higher order interminiband transitions in AlN-GaN-based superlattices

Latest developments in GaN-based quantum devices for infrared optoelectronics

MBE growth of AlN/GaN-based photovoltaic intersubband photodetectors

MBE growth of nitride-based photovoltaic intersubband detectors

Monolithically integrated AlGaN/GaN/AlN-based solar-blind ultraviolet and near-infrared detectors

Monolithically integrated UV/IR-photodetectors based on an AlN/GaN-based superlattice grown on an AlGaN buffer layer

Optically nonlinear effects in intersubband transitions of GaN∕AlN-based superlattice structures