Lista de obras - Tania Paskova - Dominio Público Uruguay

A review of in situ surface functionalization of gallium nitride via beaker wet chemistry

article

Anisotropic thermal conductivity of β-Ga2O3 at elevated temperatures: Effect of Sn and Fe dopants

Atomic and electronic structure of N-terminated GaN(0001̄) (1 × 1) surface

Characterization of freestanding semi-insulating Fe-doped GaN by photoluminescence and electromodulation spectroscopy

Characterization of mass-transport grown GaN by hydride vapour-phase epitaxy

Charge transfer in semi-insulating Fe-doped GaN

Comparison of the Stability of Functionalized GaN and GaP.

artículo científico publicado en 2015

Defect structure ofa-plane GaN grown by hydride and metal-organic vapor phase epitaxy onr-plane sapphire

artículo científico publicado en 2007

Direct observation of large-scale nonuniformities in hydride vapor-phase epitaxy-grown gallium nitride by cathodoluminescence

scholarly article by E. M. Goldys et al published 14 December 1998 in Applied Physics Letters

Dominating behaviour of the donor-acceptor pair emission in mass-transport GaN

Donor-acceptor pair emission enhancement in mass-transport-grown GaN

Effect of Si doping on the thermal conductivity of bulk GaN at elevated temperatures – theory and experiment

Effect of etching with cysteamine assisted phosphoric acid on gallium nitride surface oxide formation

scholarly article by S. J. Wilkins et al published 14 August 2013 in Journal of Applied Physics

Effect of m-plane GaN substrate miscut on InGaN/GaN quantum well growth

Electrical and optical properties of bulk GaN substrates studied by Kelvin probe and photoluminescence

Electron band bending and surface sensitivity: X-ray photoelectron spectroscopy of polar GaN surfaces

article published in 2017

Electron band bending of polar, semipolar and non-polar GaN surfaces

Elimination of nonuniformities in thick GaN films using metalorganic chemical vapor deposited GaN templates

Erratum: “Electron band bending of polar, semipolar and non-polar GaN surfaces” [J. Appl. Phys. 119, 105303 (2016)]

scholarly article published in Journal of Applied Physics

Erratum: “Elimination of nonuniformities in thick GaN films using metalorganic chemical vapor deposited GaN templates” [J. Appl. Phys. 90, 6011 (2001)]

scholarly article published in Journal of Applied Physics

Erratum: “Interfacial structure of a-plane GaN grown on r-plane sapphire” [Appl. Phys. Lett. 90, 081918 (2007)]

artículo científico publicado en 2007

Free-Standing HVPE-GaN Quasi-Substrates: Impurity and Strain Distributions

GaN polarity determination by photoelectron diffraction

article published in 2013

GaN quantum dot polarity determination by X-ray photoelectron diffraction

Hydride vapour-phase epitaxy growth and cathodoluminescence characterisation of thick GaN films

Identification of the gallium vacancy–oxygen pair defect in GaN

scholarly article in Physical Review B, vol. 80 no. 15, October 2009

Impact of MOCVD-GaN ‘templates’ on the spatial non-uniformities of strain and doping distribution in hydride vapour phase epitaxial GaN

In situ chemical functionalization of gallium nitride with phosphonic acid derivatives during etching

artículo científico publicado en 2014

Indium incorporation in InGaN/GaN quantum wells grown on m-plane GaN substrate and c-plane sapphire

Influence of growth rate on the structure of thick GaN layers grown by HVPE

article published in 2000

Interfacial structure of a-plane GaN grown on r-plane sapphire

artículo científico publicado en 2007

Introduction

Mass Transport Growth and Properties of Hydride Vapour Phase Epitaxy GaN

Mass transport growth and optical emission properties of hydride vapor phase epitaxy GaN

Modified surface chemistry, potential, and optical properties of polar gallium nitride via long chained phosphonic acids

scholarly article by Stewart J. Wilkins et al published February 2015 in Applied Surface Science

Modulated optical properties of nonpolar gallium nitride via surface in-situ functionalization with cysteamine assisted phosphoric acid

article published in 2014

Modulated optical sensitivity with nanostructured gallium nitride

Multifacet semipolar formation by controlling the groove depth via lateral sidewall epitaxy

Non-destructive assessment of the polarity of GaN nanowire ensembles using low-energy electron diffraction and x-ray photoelectron diffraction

On the Mechanism of Dislocation and Stacking Fault Formation in a-plane GaN Films Grown by Hydride Vapor Phase Epitaxy

artículo científico publicado en 2007

Optimization of homoepitaxially grown AlGaN/GaN heterostructures

Overgrowth of GaN on GaN nanowires produced by mask-less etching

article by P. Frajtag et al published August 2012 in Journal of Crystal Growth

Photoluminescence ofa -plane GaN: comparison between MOCVD and HVPE grown layers

Physical Properties of AlGaN/GaN Heterostructures Grown on Vicinal Substrates

article published in 2010

Polarity of GaN with polar {0001} and semipolar , , orientations by x-ray photoelectron diffraction

Polarity of semipolar wurtzite crystals: X-ray photoelectron diffraction from GaN{101¯1} and GaN{202¯1} surfaces

article published in 2014

Preface

Radiation-induced defects in GaN

Raman scattering study of crystal perfection of MOVPE-grown GaAs

artículo científico publicado en 1993

Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

article

Spectroscopic investigation of coupling among asymmetric InGaN/GaN multiple quantum wells grown on non-polar a-plane GaN substrates

Structural defect-related emissions in nonpolar a-plane GaN

Structural properties of 6H-SiC epilayers grown by two different techniques

Surface analysis of free-standing GaN substrates with polar, non-polar, and semipolar crystal orientations

Surface characterization of gallium nitride modified with peptides before and after exposure to ionizing radiation in solution

artículo científico publicado en 2014

Thermal Properties of AlGaN/GaN HFETs on Bulk GaN Substrates

Thermal conductivity and dielectric properties of a TiO2-based electrical insulator for use with high temperature superconductor-based magnets

scholarly article by S A Ishmael et al published 19 August 2014 in Superconductor Science and Technology

Thermal conductivity of bulk GaN grown by HVPE: Effect of Si doping

Thick Hydride Vapour Phase Epitaxial GaN Layers Grown on Sapphire with Different Buffers

Time-resolved spectroscopy of excitons bound at shallow neutral donors in HVPE GaN

article by Bo Monemar et al published April 2006 in Physica B

Tuning the biocompatibility of aluminum nitride

scholarly article by Nora G. Berg et al published February 2017 in Materials Letters

Lista de obras de Tania Paskova

A review of in situ surface functionalization of gallium nitride via beaker wet chemistry

Anisotropic thermal conductivity of β-Ga2O3 at elevated temperatures: Effect of Sn and Fe dopants

Atomic and electronic structure of N-terminated GaN(0001̄) (1 × 1) surface

Characterization of freestanding semi-insulating Fe-doped GaN by photoluminescence and electromodulation spectroscopy

Characterization of mass-transport grown GaN by hydride vapour-phase epitaxy

Charge transfer in semi-insulating Fe-doped GaN

Comparison of the Stability of Functionalized GaN and GaP.

Defect structure ofa-plane GaN grown by hydride and metal-organic vapor phase epitaxy onr-plane sapphire

Direct observation of large-scale nonuniformities in hydride vapor-phase epitaxy-grown gallium nitride by cathodoluminescence

Dominating behaviour of the donor-acceptor pair emission in mass-transport GaN

Donor-acceptor pair emission enhancement in mass-transport-grown GaN

Effect of Si doping on the thermal conductivity of bulk GaN at elevated temperatures – theory and experiment

Effect of etching with cysteamine assisted phosphoric acid on gallium nitride surface oxide formation

Effect of m-plane GaN substrate miscut on InGaN/GaN quantum well growth

Electrical and optical properties of bulk GaN substrates studied by Kelvin probe and photoluminescence

Electron band bending and surface sensitivity: X-ray photoelectron spectroscopy of polar GaN surfaces

Electron band bending of polar, semipolar and non-polar GaN surfaces

Elimination of nonuniformities in thick GaN films using metalorganic chemical vapor deposited GaN templates

Erratum: “Electron band bending of polar, semipolar and non-polar GaN surfaces” [J. Appl. Phys. 119, 105303 (2016)]

Erratum: “Elimination of nonuniformities in thick GaN films using metalorganic chemical vapor deposited GaN templates” [J. Appl. Phys. 90, 6011 (2001)]

Erratum: “Interfacial structure of a-plane GaN grown on r-plane sapphire” [Appl. Phys. Lett. 90, 081918 (2007)]

Free-Standing HVPE-GaN Quasi-Substrates: Impurity and Strain Distributions

GaN polarity determination by photoelectron diffraction

GaN quantum dot polarity determination by X-ray photoelectron diffraction

Hydride vapour-phase epitaxy growth and cathodoluminescence characterisation of thick GaN films

Identification of the gallium vacancy–oxygen pair defect in GaN

Impact of MOCVD-GaN ‘templates’ on the spatial non-uniformities of strain and doping distribution in hydride vapour phase epitaxial GaN

In situ chemical functionalization of gallium nitride with phosphonic acid derivatives during etching

Indium incorporation in InGaN/GaN quantum wells grown on m-plane GaN substrate and c-plane sapphire

Influence of growth rate on the structure of thick GaN layers grown by HVPE

Interfacial structure of a-plane GaN grown on r-plane sapphire

Introduction

Mass Transport Growth and Properties of Hydride Vapour Phase Epitaxy GaN

Mass transport growth and optical emission properties of hydride vapor phase epitaxy GaN

Modified surface chemistry, potential, and optical properties of polar gallium nitride via long chained phosphonic acids

Modulated optical properties of nonpolar gallium nitride via surface in-situ functionalization with cysteamine assisted phosphoric acid

Modulated optical sensitivity with nanostructured gallium nitride

Multifacet semipolar formation by controlling the groove depth via lateral sidewall epitaxy

Non-destructive assessment of the polarity of GaN nanowire ensembles using low-energy electron diffraction and x-ray photoelectron diffraction

On the Mechanism of Dislocation and Stacking Fault Formation in a-plane GaN Films Grown by Hydride Vapor Phase Epitaxy

Optimization of homoepitaxially grown AlGaN/GaN heterostructures

Overgrowth of GaN on GaN nanowires produced by mask-less etching

Photoluminescence ofa -plane GaN: comparison between MOCVD and HVPE grown layers

Physical Properties of AlGaN/GaN Heterostructures Grown on Vicinal Substrates

Polarity of GaN with polar {0001} and semipolar , , orientations by x-ray photoelectron diffraction

Polarity of semipolar wurtzite crystals: X-ray photoelectron diffraction from GaN{101¯1} and GaN{202¯1} surfaces

Preface

Preface

Preface

Radiation-induced defects in GaN

Raman scattering study of crystal perfection of MOVPE-grown GaAs

Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

Spectroscopic investigation of coupling among asymmetric InGaN/GaN multiple quantum wells grown on non-polar a-plane GaN substrates

Structural defect-related emissions in nonpolar a-plane GaN

Structural properties of 6H-SiC epilayers grown by two different techniques

Surface analysis of free-standing GaN substrates with polar, non-polar, and semipolar crystal orientations

Surface characterization of gallium nitride modified with peptides before and after exposure to ionizing radiation in solution

Thermal Properties of AlGaN/GaN HFETs on Bulk GaN Substrates

Thermal conductivity and dielectric properties of a TiO2-based electrical insulator for use with high temperature superconductor-based magnets

Thermal conductivity of bulk GaN grown by HVPE: Effect of Si doping

Thick Hydride Vapour Phase Epitaxial GaN Layers Grown on Sapphire with Different Buffers

Time-resolved spectroscopy of excitons bound at shallow neutral donors in HVPE GaN

Tuning the biocompatibility of aluminum nitride