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Lista de obras de David J. Mowbray

1.3 μm emitting, self assembled quantum dot lasers

1.3 μm lasers with AlInAs-capped self-assembled quantum dots

1.3 [micro sign]m InAs/GaAs quantum-dot laser with low-threshold current density and negative characteristic temperature above room temperature

1.3 [micro sign]m InAs∕GaAs multilayer quantum-dot laser with extremely low room-temperature threshold current density

Analysing radiative and non-radiative recombination in InAs QDs on Si for integrated laser applications

artículo científico publicado en 2016

Anomalous Stark shifts in single vertically coupled pairs of InGaAs quantum dots

Atomic scale study of the impact of the strain and composition of the capping layer on the formation of InAs quantum dots

article

Band gap dependence of the recombination processes in InAs/GaAs quantum dots studied using hydrostatic pressure

Band gap of ‘‘completely disordered’’ Ga0.52In0.48P

Carrier capture times in InGaN/GaN multiple quantum wells

Carrier dynamics in red-emitting self-organised InAs–AlGaAs quantum dots with indirect barriers

Carrier dynamics in short wavelength self-assembled InAs/Al0.6Ga0.4As quantum dots with indirect barriers

article published in 2003

Carrier lifetimes in type-II InAs quantum dots capped with a GaAsSb strain reducing layer

Characterisation of modulation doped quantum dot lasers

Charged and neutral exciton complexes in individual self-assembledIn(Ga)Asquantum dots

scholarly article in Physical Review B, vol. 63 no. 7, January 2001

Charging and spin-polarization effects in InAs quantum dots under bipolar carrier injection

Charging and spin-polarization effects in InAs quantum dots under bipolar carrier injection

Comparative study of InGaAs quantum dot lasers with different degrees of dot layer confinement

Continuum transitions and phonon coupling in single self-assembled Stranski-Krastanow quantum dots

scholarly article in Physical Review B, vol. 68 no. 23, December 2003

Control of Strain in GaSbAs/InAs/GaAs Quantum Dots

Dependence of the Electroluminescence on the Spacer Layer Growth Temperature of Multilayer Quantum-Dot Laser Structures

Dynamical Band Gap Renormalization in Self-Organized InAs/GaAs Quantum Dots

Dynamics of coherent and incoherent spin polarizations in ensembles of quantum dots

artículo científico publicado en 2004

Dynamics of stimulated emission in InAs quantum dot laser structures measured in pump-probe experiments

artículo científico publicado en 2004

Dynamics of stimulated emission in InAs quantum-dot laser structures measured in pump-probe experiments

artículo científico publicado en 2002

Effect of gain saturation and nonradiative recombination on the thermal characteristics of InAs/GaAs 1.3 /spl mu/m quantum dot lasers

Effect of thermal annealing and strain engineering on the fine structure of quantum dot excitons

scholarly article in Physical Review B, vol. 70 no. 19, November 2004

Effects of charge accumulation on the photocurrent and photoluminescence characteristics of self-assembled InAs/GaAs quantum dots

Effects of photon and thermal coupling mechanisms on the characteristics of self-assembledInAs∕GaAsquantum dot lasers

scholarly article in Physical Review B, vol. 76 no. 8, August 2007

Effects of spacer growth temperature on the optical properties of quantum dot laser structures

artículo científico publicado en 2007

Electric-field-dependent carrier capture and escape in self-assembled InAs/GaAs quantum dots

Electrical and optical bistability in [111] GaInAs–GaAs piezo-electric quantum wells

article by L.R Wilson et al published January 1997 in Superlattices and Microstructures

Electrical and optical bistability inInxGa1−xAs-GaAs piezoelectric quantum wells

article by L. R. Wilson et al published 15 June 1997 in Physical Review B

Electrically pumped InGaAs quantum dot ring and cylindrical cavity lasers

Electric‐field‐dependent photoconductivity in GaInAs‐InP quantum wells

Electro-Optical Characterization of Self-Assembled InAs/GaAs Quantum Rings Embedded in P-i-N and Schottky Diodes

article by A. G. Taboada et al published 2007 in AIP Conference Proceedings

Electroluminescence Studies of Modulation p-Doped Quantum Dot Laser Structures

Electroluminescence spectroscopy of intervalley scattering and hot-hole transport in a GaAs/AlxGa1−xAs tunneling structure

scientific article published on 01 August 1996

Electronic Properties of InAs/GaAs Self-Assembled Quantum Dot Structures and Devices Studied by Photocurrent Spectroscopy

article published in 2000

Electronic Structure of Long Wavelength (>1.3μm) GaAsSb-capped InAs Quantum Dots

Electronic band structure of AlGaInP grown by solid‐source molecular‐beam epitaxy

Electronic energy levels and energy relaxation mechanisms in self-organized InAs/GaAs quantum dots

scientific article published on 01 December 1996

Electronic properties of InAs/GaAs self-assembled quantum dots studied by photocurrent spectroscopy

Electronic structure of InAs–GaAs self-assembled quantum dots studied by perturbation spectroscopy

Emission mechanisms and band filling effects in GaAs–AlGaAs V-groove quantum wires

Emission spectra and mode structure of InAs/GaAs self-organized quantum dot lasers

Empirical bond order potential calculations of the elastic properties of epitaxial InGaSbAs layers

Engineering carrier confinement potentials in 1.3-μm InAs/GaAs quantum dots with InAlAs layers: Enhancement of the high-temperature photoluminescence intensity

Enhanced nonradiative Auger recombination in p-type modulation doped InAs/GaAs quantum dots

Enhanced phonon-assisted absorption in single InAs/GaAs quantum dots

scholarly article in Physical Review B, vol. 63 no. 16, April 2001

Enhanced photoluminescence intensity of 1.3-μm multi-layer InAs/InGaAs dots-in-well structure using the high growth temperature spacer layer step

Enhanced room-temperature quantum-dot effects in modulation-doped InAs/GaAs quantum dots

artículo científico publicado en 2009

Erratum: “Femtosecond studies of electron capture times in InGaN∕GaN multiple quantum wells” [Appl. Phys. Lett. 84, 3052 (2004)]

scholarly article published in Applied Physics Letters

Excitation and Relaxation Mechanisms in Single In(Ga)As Quantum Dots

artículo científico publicado en 2001

Excited States in Self-Assembled InAs/GaAs Quantum Dots under High Pressure

Excited states and selection rules in self-assembled InAs/GaAs quantum dots

scholarly article in Physical Review B, vol. 60 no. 4, July 1999

Exciton fine structure splitting in dot-in-a-well structures

Excitonic spin lifetimes in InGaN quantum wells and epilayers

Fast spin relaxation in InGaN/GaN multiple quantum wells

Femtosecond studies of electron capture times in InGaN/GaN multiple quantum wells

Fermi sea shake-up in quantum well luminescence spectra

Fine structure of charged and neutral excitons in InAs-Al0.6Ga0.4Asquantum dots

scholarly article in Physical Review B, vol. 66 no. 15, October 2002

Free-carrier screening of the interaction between excitons and longitudinal-optical phonons inInxGa1−xAs-InP quantum wells

artículo científico publicado en 1987

GROWTH AND CHARACTERIZATION OF MULTI-LAYER 1.3 μm QUANTUM DOT LASERS

artículo científico publicado en 2007

GaInP–AlGaInP band offsets determined from hydrostatic pressure measurements

Gain characteristics of InAs/GaAs self-organized quantum-dot lasers

Growth and characterization of (111)B InGaAs/GaAs multi-quantum well PIN diode structures

article by JPR David et al published September 1994 in Journal of Electronic Materials

Growth and characterization of multiple layer quantum dot lasers

Growth of pseudomorphic InGaAs/GaAs quantum wells on [111]B GaAs for strained layer, piezoelectric, optoelectronic devices

article by R. Grey et al published December 1995 in Microelectronics Journal

Growth, Fabrication, and Operating Characteristics of Ultra-Low Threshold Current Density 1.3 µm Quantum Dot Lasers

High performance 1.3μm InAs/GaAs quantum dot lasers with low threshold current and negative characteristic temperature

artículo científico publicado en 2006

High-performance 1.3 µm InAs/GaAs quantum-dot lasers with low threshold current and negative characteristic temperature

High-performance 1300-nm InAs/GaAs quantum-dot lasers

High-performance three-layer 1.3-/spl mu/m InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents

Hydrostatic-pressure determination of tensile-strainedGaxIn1−xP-(AlyGa1−y)0.52In0.48P quantum-well band offsets

artículo científico publicado en 1996

Improved 1.3 μm In(Ga)As quantum dot lasers by engineering the GaAs spacer layers

Improved performance of 1.3-/spl mu/m In(Ga)As quantum-dot lasers by modifying the temperature profile of the GaAs spacer layers

Improved performance of 1.3μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer

artículo científico publicado en 2004

Improved temperature performance of 1.31-/spl mu/m quantum dot lasers by optimized ridge waveguide design

In situ annealing enhancement of the optical properties and laser device performance of InAs quantum dots grown on Si substrates

artículo científico publicado en 2016

In- and out-going resonant Raman scattering from the cavity polaritons of semiconductor quantum microcavities

scholarly article in Physical Review B, vol. 56 no. 19, November 1997

InAs–GaAs self-assembled quantum dot lasers: physical processes and device characteristics

InGaAs‐InP multiple quantum wells grown by atmospheric pressure metalorganic chemical vapor deposition

Influence of GaN barrier growth temperature on the photoluminescence of InGaN/GaN heterostructures

Influences of the spacer layer growth temperature on multilayer InAs∕GaAs quantum dot structures

artículo científico publicado en 2004

Infrared modulated interlevel spectroscopy of 1.3μm self-assembled quantum dot lasers using a free electron laser

Intensity noise in quantum-dot laser diodes

Inverted Electron-Hole Alignment in InAs-GaAs Self-Assembled Quantum Dots

artículo científico publicado en 2000

Lasing and spontaneous emission characteristics of 1.3μm In(Ga)As quantum-dot lasers

Long-wavelength light emission and lasing from InAs∕GaAs quantum dots covered by a GaAsSb strain-reducing layer

Longitudinal-optical phonon and shake-up excitations in the recombination spectra of semiconductor quantum wells

scientific article published on 01 March 1993

Low threshold current density and negative characteristic temperature 1.3μm InAs self-assembled quantum dot lasers

MAGNETOOPTICS OF (Ga, In) As QUANTUM WELLS : EXCITON BINDING ENERGIES AND CARRIER EFFECTIVE MASSES

Magneto-optical spectroscopy of InAs/GaAs self-organised quantum dots

Magneto-optical studies of GainAsInP quantum wells

Magneto-optical studies of ballistic electron transport in single barrier heterostructures

article by R. Teissier et al published June 1994 in Superlattices and Microstructures

Magneto-optical studies of self-organized InAs/GaAs quantum dots

scholarly article in Physical Review B, vol. 57 no. 4, January 1998

Magneto-optical study of thermally annealed InAs-InGaAs-GaAs self-assembled quantum dots

Manipulation of the homogeneous linewidth of an individual In(Ga)As quantum dot

scholarly article in Physical Review B, vol. 66 no. 4, July 2002

Maximising the gain: optimising the carrier distribution in InGaAs quantum dot lasers

scholarly article published 8 February 2007

Measurement of modal absorption, gain and recombination in p-doped and intrinsic quantum dot structures

Measurement of the direct energy gap ofAl0.5In0.5P: Implications for the band discontinuity atGa1−xInxP/AlyIn1−yP heterojunctions

artículo científico publicado en 1994

Mechanism for improvements of optical properties of 1.3-μm InAs∕GaAs quantum dots by a combined InAlAs–InGaAs cap layer

artículo científico publicado en 2005

Modal gain and lasing states in InAs/GaAs self-organized quantum dot lasers

New physics and devices based on self-assembled semiconductor quantum dots

Non-linear effects on the power dependent photocurrent of self-assembled InAs/GaAs quantum dots

Observation and Modeling of a Room-Temperature Negative Characteristic Temperature 1.3-$\mu$m p-Type Modulation-Doped Quantum-Dot Laser

Observation of Wannier-Stark ladder transitions inInxGa1−xAs-GaAs piezoelectric superlattices

scientific article published on 01 November 1995

Observation of a Many-Body Edge Singularity in Quantum-Well Luminescence Spectra

artículo científico publicado en 1987

Observation of multicharged excitons and biexcitons in a single InGaAs quantum dot

scholarly article in Physical Review B, vol. 63 no. 16, April 2001

Observation of wire width fluctuations in the optical spectra of GaAs–AlGaAs V-groove quantum wires

Optical Characterisation of AlGaN Epitaxial Layers and GaN/AlGaN Quantum Wells

Optical Spectroscopic Study of Carrier Processes in Self-Assembled In(Ga)As-Ga(Al)As Quantum Dot Lasers

Optical and electrical investigation of an asymmetric strained-layer double-barrier resonant-tunnelling structure

Optical and microstructural studies of InGaN/GaN quantum dot ensembles

scholarly article

Optical properties of (AlxGa1−x)0.52In0.48P at the crossover from a direct-gap to an indirect-gap semiconductor

Optical properties of ordered and randomly disordered AlAs/GaAs short-period superlattices

article

Optical properties of single charge tuneable InGaAs quantum dots

artículo científico publicado en 2002

Optical spectroscopic determination of the electronic band structure of bulk AlGaInP and GaInP-AlGaInP heterojunction band offsets

Optical spectroscopic observation of spontaneous long range ordering in AlGaInP

Optical spectroscopy of AlGaInP based wide band gap quantum wells

Optical spectroscopy of GaAs–AlGaAs v-groove quantum wires

Optical transitions in type-II InAs∕GaAs quantum dots covered by a GaAsSb strain-reducing layer

Optimising the defect filter layer design for III/V QDs on Si for integrated laser applications

artículo científico publicado en 2015

Optimizing the growth of 1.3 μm InAs/InGaAs dots-in-a-well structure

Optimizing the growth of 1.3-μm InAs/InGaAs dots-in-a-well structure: Achievement of high-performance laser

artículo científico publicado en 2005

Performance of lasers containing three, five and seven layers of quantum dots

Phonon satellites and time-resolved studies of carrier recombination dynamics in InGaN quantum wells

Photocurrent Spectroscopy of InAs/GaAs Self-Assembled Quantum Dots

Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots

scholarly article in Physical Review B, vol. 62 no. 24, December 2000

Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots: observation of a permanent dipole moment

Photoluminescence decay time measurements from self-organized InAs/GaAs quantum dots

Photoluminescence, photoluminescence excitation, and resonant Raman spectroscopy of disordered and ordered Ga0.52In0.48P

Photon Coupling Mechanism in 1.3-μm Quantum-Dot Lasers

Photon coupling mechanism in 1.3-μm quantum-dot lasers

Picosecond carrier dynamics in AlInGaN multiple quantum wells

Piezoelectric-field effects on transition energies, oscillator strengths, and level widths in (111)B-grown (In,Ga)As/GaAs multiple quantum wells

artículo científico publicado en 1993

Polarization-dependent phenomena in the reflectivity spectra of semiconductor quantum microcavities

scholarly article in Physical Review B, vol. 56 no. 16, October 1997

Precise measurement of the fraction of charged dots in self-assembled quantum dot ensembles using ultrafast pump-probe techniques

Quantum Confined Stark Effect and Permanent Dipole Moment of InAs–GaAs Self-Assembled Quantum Dots

Quantum-confined Stark shifts of charged exciton complexes in quantum dots

scholarly article in Physical Review B, vol. 70 no. 20, November 2004

Raman scattering by GaInAs-InP quantum wells: effects of free carriers and impurities

Recent developments in the physics and applications of self-assembled quantum dots

Recombination and loss mechanisms in low-threshold InAs-GaAs 1.3-/spl mu/m quantum-dot lasers

Recombination and loss mechanisms in low-threshold InAs/GaAs 1.3 μm quantum dot lasers

Recombination mechanisms in 1.3-/spl mu/m InAs quantum-dot lasers

Recombination of Many-Particle States in InAs Self-Organized Quantum Dots

Recombination processes in inas quantum dot lasers containing high growth temperature spacer layers operating at 1.3 μm

Reduced temperature sensitivity of lasing wavelength in near-1.3 [micro sign]m InAs/GaAs quantum-dot laser with stepped composition strain-reducing layer

article

Resolution of discrete excited states inInxGa1−xNmultiple quantum wells using degenerate four-wave mixing

scholarly article in Physical Review B, vol. 73 no. 16, April 2006

Resonant Raman scattering in quantum wells

Role of Device Structure on the Performance of Quantum Dot Lasers

article

Role of segregation in InAs/GaAs quantum dot structures capped with a GaAsSb strain-reduction layer

scholarly article in Physical Review B, vol. 80 no. 16, October 2009

Room-temperature 1.6μm light emission from InAs∕GaAs quantum dots with a thin GaAsSb cap layer

Room-temperature, ground-state lasing for red-emitting vertically aligned InAlAs/AlGaAs quantum dots grown on a GaAs(100) substrate

SELF-ASSEMBLED SEMICONDUCTOR QUANTUM DOTS: Fundamental Physics and Device Applications

article published in 2004

Screening of the exciton-LO phonon interaction in quantum wells

Silicon-Based Single Quantum Dot Emission in the Telecoms C-Band

artículo científico publicado en 2017

Solid‐source molecular beam epitaxy growth of GaInP and GaInP‐containing quantum wells

Spectroscopic study of piezo-electric field effects in InGaAs/GaAs multi-quantum wells grown on (111)B oriented GaAs substrates

article by T.A. Fisher et al published April 1994 in Solid-State Electronics

Stark ladders in piezoelectric superlattices

artículo científico publicado en 1995

Stimulated emission and carrier dynamics in AlInGaN multi-quantum wells

Structural analysis of life tested 1.3 μm quantum dot lasers

artículo científico publicado en 2008

Structural and optical studies of vertically aligned InAs/GaAs self-assembled quantum dots

Suppression of InAs∕GaAs quantum dot decomposition by the incorporation of a GaAsSb capping layer

Systematic Study of the Effects of Modulation p-Doping on 1.3-$\mu{\hbox {m}}$ Quantum-Dot Lasers

Systematic reduction of the permanent exciton dipole for charged excitons in individual self-assembled InGaAs quantum dots

Systematic study of the effects of δ-p-doping on 1.3μm dot-in-well lasers

Tailoring of internal fields in InGaAs/GaAs multiwell structures grown on (111)B GaAs

article by A. S. Pabla et al published 9 August 1993 in Applied Physics Letters

Temperature dependence of threshold current in p-doped quantum dot lasers

Temperature-Dependent Gain and Threshold in P-Doped Quantum Dot Lasers

Temperature-induced carrier escape processes studied in absorption of individualInxGa1−xAsquantum dots

scholarly article in Physical Review B, vol. 69 no. 15, April 2004

The effect of p - doping in In(Ga)As quantum dot lasers

The effect of p doping in InAs quantum dot lasers

The role of high growth temperature GaAs spacer layers in 1.3-/spl mu/m In(Ga)As quantum-dot lasers

The use of Abel-Tersoff potentials in atomistic simulations of InGaAsSb/GaAs

The use of Abell–Tersoff potentials in atomistic simulations of InGaAsSb/GaAs

Time-resolved photoluminescence studies of carrier diffusion in GaN

Time-resolved photoluminescence studies of carrier diffusion in Si-doped GaInN/GaN quantum wells

Valence-band splitting in orderedGa0.5In0.5P measured by polarized photoluminescence excitation spectroscopy

artículo científico publicado en 1992

Wannier-Stark ladder spectra in InxGa1−xAsGaAs strained layer piezo-electric superlattices

article by D.W. Peggs et al published January 1996 in Solid-State Electronics

p-doped 1.3μm InAs∕GaAs quantum-dot laser with a low threshold current density and high differential efficiency

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