Lista de obras - Michal Boćkowski - Dominio Público Uruguay

Accessing Forbidden Glass Regimes through High-Pressure Sub-Tg Annealing

artículo científico publicado en 2017

Amphoteric Be in GaN: Experimental Evidence for Switching between Substitutional and Interstitial Lattice Sites.

artículo científico publicado en 2017

Complex Geometric Structure of a Simple Solid-Liquid Interface: GaN(0001)-Ga

artículo científico publicado en 2020

Diluted Magnetic III-V Semiconductors With Mn For Possible Spintronic Applications

artículo científico publicado en 2007

Dissolution Kinetics of Hot Compressed Oxide Glasses.

artículo científico publicado en 2017

Effects of defect scattering on the photoluminescence of exciton-polaritons in n-GaN

artículo científico publicado en 1998

Electronic structure of ytterbium-implanted GaN at ambient and high pressure: experimental and crystal field studies

artículo científico publicado en 2012

GaN‐Based Materials

artículo científico publicado en 2020

HVPE-GaN growth on GaN-based Advanced Substrates by Smart Cut™

HVPE-GaN growth on GaN-based advanced substrates by Smart Cut TM

artículo científico publicado en 2016

Homoepitaxial HVPE GaN growth on non- and semi-polar seeds

artículo científico publicado en 2015

Hysteretic Photochromic Switching (HPS) in Doubly Doped GaN(Mg):Eu-A Summary of Recent Results

artículo científico publicado en 2018

Hysteretic photochromic switching of Eu-Mg defects in GaN links the shallow transient and deep ground states of the Mg acceptor

artículo científico publicado en 2017

Luminescence studies on green emitting InGaN/GaN MQWs implanted with nitrogen

artículo científico publicado en 2015

Mixed alkaline earth effect in the compressibility of aluminosilicate glasses.

artículo científico publicado en 2014

Photoluminescence studies of a perceived white light emission from a monolithic InGaN/GaN quantum well structure.

artículo científico publicado en 2015

Pressure-induced changes in interdiffusivity and compressive stress in chemically strengthened glass

scientific article published on 17 June 2014

Structural Compromise between High Hardness and Crack Resistance in Aluminoborate Glasses

artículo científico publicado en 2018

Unique effects of thermal and pressure histories on glass hardness: Structural and topological origin.

artículo científico publicado en 2015

Lista de obras de Michal Boćkowski

Accessing Forbidden Glass Regimes through High-Pressure Sub-Tg Annealing

Amphoteric Be in GaN: Experimental Evidence for Switching between Substitutional and Interstitial Lattice Sites.

Complex Geometric Structure of a Simple Solid-Liquid Interface: GaN(0001)-Ga

Diluted Magnetic III-V Semiconductors With Mn For Possible Spintronic Applications

Dissolution Kinetics of Hot Compressed Oxide Glasses.

Effects of defect scattering on the photoluminescence of exciton-polaritons in n-GaN

Electronic structure of ytterbium-implanted GaN at ambient and high pressure: experimental and crystal field studies

GaN‐Based Materials

HVPE-GaN growth on GaN-based Advanced Substrates by Smart Cut™

HVPE-GaN growth on GaN-based advanced substrates by Smart Cut TM

Homoepitaxial HVPE GaN growth on non- and semi-polar seeds

Hysteretic Photochromic Switching (HPS) in Doubly Doped GaN(Mg):Eu-A Summary of Recent Results

Hysteretic photochromic switching of Eu-Mg defects in GaN links the shallow transient and deep ground states of the Mg acceptor

Luminescence studies on green emitting InGaN/GaN MQWs implanted with nitrogen

Mixed alkaline earth effect in the compressibility of aluminosilicate glasses.

Photoluminescence studies of a perceived white light emission from a monolithic InGaN/GaN quantum well structure.

Pressure-induced changes in interdiffusivity and compressive stress in chemically strengthened glass

Structural Compromise between High Hardness and Crack Resistance in Aluminoborate Glasses

Unique effects of thermal and pressure histories on glass hardness: Structural and topological origin.

Zeeman splittings of the 5D0–7F2 transitions of Eu3+ ions implanted into GaN