(Invited) Nitride Photocatalyst to Produce Clean Hydrogen from Water without Extra Bias

article

740-nm emission from InGaN-based LEDs on c-plane sapphire substrates by MOVPE

An orthogonal surface phase in semipolar GaN∕r-plane sapphire

Analysis of Products from Photoelectrochemical Reduction of 13CO2 by GaN-Si Based Tandem Photoelectrode

Analysis of TMGa/NH3/H2reaction system in GaN-MOVPE growth by computational simulation

Analysis of pulsed injection of precursors in AlN-MOVPE growth by computational fluid simulation

Band-Edge Energies and Photoelectrochemical Properties of n-Type Al[sub x]Ga[sub 1−x]N and In[sub y]Ga[sub 1−y]N Alloys

Bias-Assisted H[sub 2] Gas Generation in HCl and KOH Solutions Using n-Type GaN Photoelectrode

article

Blue Electroluminescence from ZnSep-nJunction Light-Emitting Diodes

CO$_{2}$ Conversion with Light and Water by GaN Photoelectrode

Cathodoluminescence characterization of [110]-oriented InGaN/GaN thin films grown onr-plane sapphire substrates by metalorganic vapor-phase epitaxy

CdSe/ZnSe quantum structures grown by migration enhanced epitaxy: Structural and optical investigations

Characteristics of Cl‐doped ZnSe layers grown by molecular‐beam epitaxy

Characteristics of ZnCdSe single-quantum-well laser diodes

Characteristics of p-type ZnSe Layers Grown by Molecular Beam Epitaxy with Radical Doping

Characterization and electrochemical properties of CF4 plasma-treated boron-doped diamond surfaces

Characterization of InGaN/GaN Fibonacci superlattices grown by two-flow metalorganic vapor phase epitaxy

Characterization of short-period ZnTe-ZnS superlattices grown by MBE

article published in 1990

Compound source molecular beam epitaxy for II–VI laser structures

Compound-Source MBE for ZnSe-Based Lasers

Computational fluid dynamics on gaseous and surface chemistry of GaN-MOVPE system for various pressures

Demonstration of InGaN-based orange LEDs with hybrid multiple-quantum-wells structure

article published in 2016

Device Properties of Homo- and Heteroepitaxial ZnSe-Based Laser Diodes

Direct Observation of an Ordered Phase in (11\bar20) Plane InGaN Alloy

Direct evidence for the trigonal symmetry of shallow phosphorus acceptors in ZnSe

article by J. J. Davies et al published 6 November 2001 in Physical Review B

Doping of nitrogen acceptors into ZnSe using a radical beam during MBE growth

Effect of biaxial strain on exciton luminescence of heteroepitaxial ZnSe layers

artículo científico publicado en 1988

Effect of inserted Si p-n junction on GaN-based photo-electrochemical CO2 conversion system

Effect of thermal radiation and absorption in GaN-MOVPE growth modeling on temperature distribution and chemical state

Effects of intentional oxygen and carbon doping in MOVPE-grown GaN layers on photoelectric properties

Efficiency enhancement of InGaN amber MQWs using nanopillar structures

Electron and x‐ray diffraction study of ZnTe‐ZnS strained‐layer superlattices grown by molecular beam epitaxy

article published in 1989

Electron-phonon quantum kinetics in the strong-coupling regime

scholarly article in Physical Review B, vol. 60 no. 17, November 1999

Electron–phonon quantum kinetics in the strong coupling regime

Electrooptic effect of water in electric double layer at interface of GaN electrode

Energy renormalization and binding energy of the biexciton

scholarly article in Physical Review B, vol. 67 no. 16, April 2003

Enhanced CO2 reduction capability in an AlGaN/GaN photoelectrode

Enhanced Capability of Photoelectrochemical CO2Conversion System Using an AlGaN/GaN Photoelectrode

Enhanced light output power of InGaN-based amber LEDs by strain-compensating AlN/AlGaN barriers

Fabrication and optical properties of blue LEDs with silica microsphere coating

Formation of polymers in TMGa/NH3/H2 system under GaN growth

Formation of self-assembling II–VI semiconductor nanostructures during migration enhanced epitaxy

Free induction decay and quantum beat of excitons in ZnSe

GaN-MOVPE growth and its microscopic chemistry of gaseous phase by computational thermodynamic analysis

Giant excitonic optical nonlinearity in ZnSe grown by molecular beam epitaxy

Giant nonlinear phase shift at exciton resonance in ZnSe

Gigantic Reflectance Anisotropy of the [110] Face of Cubic ZnSe in the Excitonic Part of the Spectrum

Growth behavior of AlInGaN films

High Stability and Efficiency of GaN Photocatalyst for Hydrogen Generation from Water

Highly Stable GaN Photocatalyst for Producing H2Gas from Water

Highly efficient photochemical HCOOH production from CO2 and water using an inorganic system

Homoepitaxial growth of ZnSe on dry‐etched substrates

Homoepitaxial laser diodes grown on conducting and insulating ZnSe substrates

Hydrogen Gas Generation by Splitting Aqueous Water Using n-Type GaN Photoelectrode with Anodic Oxidation

Hydrogen generation from aqueous water using n-GaN by photoassisted electrolysis

Improvement of electrical property of Si-doped GaN grown on -plane sapphire by metalorganic vapor-phase epitaxy

Impurity doping effect on thermal stability of InGaN∕GaN multiple quantum-well structures

In concentration and tilt of the a-plane InGaN/GaN film by TEM analysis

InGaN photocatalysts on conductive Ga2O3substrates

Influence of polymer formation on metalorganic vapor-phase epitaxial growth of AlN

Instability of Cl-Related Deep Defects in ZnSe

Internal photoluminescence and lifetime of light-emitting diodes on conductive ZnSe substrates

Internal photoluminescence in ZnSe homoepitaxy and application in blue–green–orange mixed-color light-emitting diodes

article by H. Wenisch et al published June 2000 in Journal of Crystal Growth

Investigation of Growth Mechanism for InGaN by Metal–Organic Vapor Phase Epitaxy Using Computational Fluid Simulation

Investigation of amber light-emitting diodes based on InGaN/AlN/AlGaN quantum wells

Investigation of surface morphology of n-type GaN after photoelectrochemical reaction in various solutions for H2 gas generation

Large misorientation of GaN films grown on r-plane sapphire substrates by metalorganic vapor-phase epitaxy

Local structural characterization of epitaxiala -plane InGaN/GaN thin films by transmission electron microscopy

article

MBE-grown ZnTe-ZnS strained-layer superlattices

Measurements of the absolute external luminescence quantum efficiency in ZnSe/ZnMgSSe multiple quantum wells as a function of temperature

Microstructural analysis of N-polar InGaN directly grown on a ScAlMgO₄(0001) substrate

artículo científico publicado en 2022

Midinfrared pump–probe reflection spectroscopy of the coupled phonon–plasmon mode in GaN

article

Migration enhanced epitaxy of CdSe islands on ZnSe and their optical and structural characterization

Modeling of Reaction Pathways of GaN Growth by Metalorganic Vapor-Phase Epitaxy Using TMGa/NH3/H2System: A Computational Fluid Dynamics Simulation Study

article

Molecular beam epitaxial growth of nitrogen-doped ZnSe with ion doping technique

Molecular-beam epitaxial growth of p- and n-type ZnSe homoepitaxial layers

article published in 1992

Molecular‐beam epitaxial growth and characterization of ZnS‐ZnxCd1−xS strained‐layer superlattices

Morphological Characteristics ofa-Plane GaN Grown onr-Plane Sapphire by Metalorganic Vapor-Phase Epitaxy

Morphological evaluation of epitaxial GaN grown onr -plane sapphire by metalorganic vapor-phase epitaxy

Multiple states in surface lattice constant behavior during the molecular beam epitaxial growth of ZnTe‐ZnS strained layer superlattices

Nitride photocatalyst to generate hydrogen gas from water

Optical detection of crystallographic domains in zinc-blende crystals

Optical gain in an inhomogeneously broadened exciton system

Photo-induced CO$_{2}$ Reduction with GaN Electrode in Aqueous System

Photoelectrochemical CO2Conversion to Hydrocarbons Using an AlGaN/GaN-Si Tandem Photoelectrode

Photoelectrochemical H2 Gas Generation Improvement with Thin p-Type GaN Layer on n-Type GaN

Photoelectrochemical Properties of InGaN for H2Generation from Aqueous Water

Photoelectrochemical Properties of Nonpolar and Semipolar GaN

Photoelectrochemical Properties of p-Type GaN in Comparison with n-Type GaN

Photoelectrochemical Properties of the p−n Junction in and near the Surface Depletion Region of n-Type GaN

Photoelectrochemical reaction and H2 generation at zero bias optimized by carrier concentration of n-type GaN

article

Photoluminescence properties of nitrogen-doped ZnSe layers grown by molecular beam epitaxy with ion- and radical-beam doping techniques

Photoluminescence properties of nitrogen‐doped ZnSe layers grown by molecular beam epitaxy with low‐energy ion doping

Planar homoepitaxial laser diodes grown on aluminium-doped ZnSe substrates

Plasma etching treatment for surface modification of boron-doped diamond electrodes

article published in 2007

Radiative recombination centers induced by stacking-fault pairs in ZnSe/ZnMgSSe quantum-well structures

article published in 1999

Real-Index Guided Blue-Green Laser Diode with Small Beam Astigmatism Fabricated Using ZnO Buried Structure

Role of biexciton state in excitonic resonant nonlinearity in homoepitaxial ZnSe

Selectivity Control of CO2Reduction in an Inorganic Artificial Photosynthesis System

Spatiotemporal dynamics of quantum-well excitons

article

Spin‐flip Raman scattering from shallow and deep donor centers in nitrogen‐dopedp‐type zinc selenide

article by P. J. Boyce et al published 17 October 1994 in Applied Physics Letters

Stacking-fault-induced pairs of localizing centers in ZnSe quantum wells

Tandem photo-electrode of InGaN with two Si p-n junctions for CO2 conversion to HCOOH with the efficiency greater than biological photosynthesis

article published in 2015

The effect of plane orientation on indium incorporation into InGaN/GaN quantum wells fabricated by MOVPE

Treatment of ZnSe substrates for homoepitaxy

Wireless InGaN–Si/Pt device for photo-electrochemical water splitting

X-ray diffraction study of InGaN/GaN superlattice interfaces

ZnSe-based laser diodes and p-type doping of ZnSe

ZnTeZnS strained-layer superlattices grown by ALE and MBE: Effects of strain on ZnTe incorporation

p‐type ZnSe homoepitaxial layers grown by molecular beam epitaxy with nitrogen radical doping