A kinetic Monte Carlo annealing assessment of the dominant features from ion implant simulations

An atomistically informed kinetic Monte Carlo model of grain boundary motion coupled to shear deformation

Atomistic modelling and simulation of arsenic diffusion including mobile arsenic clusters

Bimodal distribution of damage morphology generated by ion implantation

Carbon in silicon: Modeling of diffusion and clustering mechanisms

Comprehensive modeling of ion-implant amorphization in silicon

Comprehensive, physically based modelling of As in Si

Dose loss and segregation of boron and arsenic at the Si/SiO2 interface by atomistic kinetic Monte Carlo simulations

Fermi-level effects in semiconductor processing: A modeling scheme for atomistic kinetic Monte Carlo simulators

article published in 2005

From point defects to dislocation loops: A comprehensive TCAD model for self-interstitial defects in silicon

From point defects to dislocation loops: A comprehensive modelling framework for self-interstitial defects in silicon

Ion implant simulations: Kinetic Monte Carlo annealing assessment of the dominant features

Ion-beam amorphization of semiconductors: A physical model based on the amorphous pocket population

Ion-implant simulations: The effect of defect spatial correlation on damage accumulation

Modeling arsenic deactivation through arsenic-vacancy clusters using an atomistic kinetic Monte Carlo approach

Modeling charged defects, dopant diffusion and activation mechanisms for TCAD simulations using kinetic Monte Carlo

artículo científico publicado en 2006

Modeling of boron diffusion in silicon–germanium alloys using Kinetic Monte Carlo

scholarly article by Ignacio Dopico et al published March 2014 in Solid-State Electronics

Physical atomistic kinetic Monte Carlo modeling of Fermi-level effects of species diffusing in silicon

scholarly article in Physical Review B, vol. 72 no. 3, July 2005

Physical modeling of Fermi-level effects for decanano device process simulations

Physically based modeling of dislocation loops in ion implantation processing in silicon

Physically based modelling of damage, amorphization, and recrystallization for predictive device-size process simulation

Process modeling of chemical and stress effects in SiGe