A kinetic Monte Carlo annealing assessment of the dominant features from ion implant simulations

Atomistic Modeling of Defect Diffusion in SiGe

Atomistic modeling and physical comprehension of the effects of implant dose rate on boron activation in pMOSFET S/D

Atomistic modeling of defect diffusion and interdiffusion in SiGe heterostructures

Atomistic modelling and simulation of arsenic diffusion including mobile arsenic clusters

Band filling at low optical power density in semiconductor dots

Band-filling in InP dots: Single dot spectroscopy and carrier dynamics

Bimodal distribution of damage morphology generated by ion implantation

Carbon in silicon: Modeling of diffusion and clustering mechanisms

Comprehensive model of damage accumulation in silicon

Comprehensive modeling of ion-implant amorphization in silicon

Comprehensive, physically based modelling of As in Si

Consequences of interface corrugation on the lattice dynamics and Raman spectra in high-index superlattices

Current Capabilities and Future Prospects of Atomistic Process Simulation

Dose loss and segregation of boron and arsenic at the Si/SiO2 interface by atomistic kinetic Monte Carlo simulations

Electronic structure of strained-layer AlAs/InAs (001) superlattices

artículo científico publicado en 1991

Enhancement of the Pockels component in the electroreflectance spectra of quantum wells

scientific article published on 01 June 1994

Excited states of individual quantum dots studied by photoluminescence spectroscopy

Fermi-level effects in semiconductor processing: A modeling scheme for atomistic kinetic Monte Carlo simulators

article published in 2005

From point defects to dislocation loops: A comprehensive TCAD model for self-interstitial defects in silicon

From point defects to dislocation loops: A comprehensive modelling framework for self-interstitial defects in silicon

Growth and characterization of (InSb)m(InP)n short period superlattices

Growth and characterization of A1As/GaInAs multiple quantum wells

article published in 1993

Growth and characterization of AlAs/InAs superlattices on {100}, {211} and {311} GaAs substrates

Interface structure of GaAs/AlAs superlattices grown on (113) surfaces: Raman scattering studies

Ion implant simulations: Kinetic Monte Carlo annealing assessment of the dominant features

Ion-beam amorphization of semiconductors: A physical model based on the amorphous pocket population

Ion-implant simulations: The effect of defect spatial correlation on damage accumulation

Kinetic Monte Carlo simulations: an accurate bridge between ab initio calculations and standard process experimental data

Lattice dynamics and Raman response of (113) GaAs/AlAs superlattices

article

Mobile silicon di-interstitial: Surface, self-interstitial clustering, and transient enhanced diffusion phenomena

scholarly article in Physical Review B, vol. 68 no. 19, November 2003

Modeling arsenic deactivation through arsenic-vacancy clusters using an atomistic kinetic Monte Carlo approach

Modeling charged defects, dopant diffusion and activation mechanisms for TCAD simulations using kinetic Monte Carlo

artículo científico publicado en 2006

Modeling of boron diffusion in silicon–germanium alloys using Kinetic Monte Carlo

scholarly article by Ignacio Dopico et al published March 2014 in Solid-State Electronics

Modulation excitation spectroscopy: A method to determine the symmetry of electronic states

Molecular dynamics study of the configurational and energetic properties of the silicon self-interstitial

article

Nano-Optical Studies of Individual Nanostructures

Optical anisotropy of (113)-oriented GaAs/AlAs superlattices

scientific article published on 01 May 1994

Optical characterization of AlAs/GaInAs multiple quantum wells

Optical phonons of strained GaAs/GaP quantum wells studied by Raman spectroscopy

Optical studies of GaAs quantum wells strained to GaP

Phonon properties and Raman response of (113) GaAs/AlAs corrugated superlattices

artículo científico publicado en 1995

Photoluminescence polarization of single InP quantum dots

scholarly article in Physical Review B, vol. 63 no. 23, May 2001

Physical atomistic kinetic Monte Carlo modeling of Fermi-level effects of species diffusing in silicon

scholarly article in Physical Review B, vol. 72 no. 3, July 2005

Physical modeling and implementation scheme of native defect diffusion and interdiffusion in SiGe heterostructures for atomistic process simulation

article published in 2011

Physical modeling of Fermi-level effects for decanano device process simulations

Physically based modeling of dislocation loops in ion implantation processing in silicon

Physically based modelling of damage, amorphization, and recrystallization for predictive device-size process simulation

Piezoelectric-field-induced localization of barrier states in {211}-oriented InAs/GaAs superlattices

artículo científico publicado en 1993

Process modeling of chemical and stress effects in SiGe

Quasi-atomistic modeling of the microstructure evolution in binary alloys and its application to the FeCr case

Raman response of (11N)-oriented GaAs/AlAs superlattices within the framework of the bond polarizability model

Raman-scattering study of GaP/InP strained-layer superlattices

artículo científico publicado en 1992

Random telegraph noise in photoluminescence from individual self-assembled quantum dots

scholarly article in Physical Review B, vol. 59 no. 16, April 1999

Resonant Raman scattering around theE0transition of AlAs/InAs strained-layer superlattices

artículo científico publicado en 1991

Self-trapping in B-doped amorphous Si: Intrinsic origin of low acceptor efficiency

scholarly article in Physical Review B, vol. 81 no. 3, January 2010

Spectroscopy, Imaging and Switching Behaviour of Individual InP/GaInP Quantum Dots

Study of the two‐dimensional–three‐dimensional growth mode transition in metalorganic vapor phase epitaxy of GaInP/InP quantum‐sized structures

The use of extended-defect dissolution as a probe for stress-induced interstitial diffusion anisotropy