A 3-phase model for VIS/NIR μC-Si:H p–i–n detectors

A two-dimensional numerical simulation of a non-uniformly illuminated amorphous silicon solar cell

Amorphous hydrogenated silicon studied by positron lifetime spectroscopy

An amorphous SIC/SI image photodetector with voltage-selectable spectral response

Analog readout image sensor based on p–i–n hydrogenated amorphous silicon

Bias controlled spectral sensitivity in a-SiC:H p–i–n devices

article

Bias-dependent photocurrent collection in p–i–n a-Si:H/SiC:H heterojunction

article

Characterisation of GaN films grown on sapphire by low-temperature cyclic pulsed laser deposition/nitrogen rf plasma

Closed-chamber CVD — a new method for preparation of group-IV thin films for large area electronics

Colour filtering in a-SiC:H based p-i-n-p-i-n cells: A trade-off between bias polarity and absorption regions

article

Complex dielectric function in lead-free NKN films

Composition of amorphous (Si,Ge):H films from nuclear elastic scattering of 12 MeV protons

article

Comprehensive numerical simulation of defect density and temperature-dependent transport properties in hydrogenated amorphous silicon

artículo científico publicado en 1995

Correlation between structural, optical and electrical properties of μc-Si films

Correlation between transient decays in wide gap semiconductors: Photoluminescence vs. photocurrent

Degradation of particle detectors based on a-Si:H by 1.5 Mev He4 and 1 MeV protons

article published in 2004

Density-of-states distribution in AlGaN obtained from transient photocurrent analysis

Development of lead-free materials for piezoelectric energy harvesting

Differential surface photovoltage measurement of minority‐carrier diffusion length in thin films

Diffusion lengths in GaN obtained from steady state photocarrier gratings (SSPG)

Effect of the barrier thickness on interface defect density in amorphous‐Si:H/amorphous‐Si1−xCx:H multilayers

Electric-field dependence of low-temperature recombination ina-Si:H

scientific article published on 01 February 1995

Electrically detected transient photocarrier grating method

Fabrication and structural studies of opal-III nitride nanocomposites

Fermi level dependence of the ambipolar diffusion length in amorphous silicon thin film transistors

article

Fine-tuning of the spectral collection efficiency in multilayer junctions

Germanosilicate glass–ceramics for non-linear optics

High band‐gap hydrogenated amorphous silicon‐selenium alloys

High‐temperature annealing behavior of μτ products of electrons and holes ina‐Si:H

ITO/SiOx/Si optical sensor with internal gain

Image capture devices based on p–i–n silicon carbides for biometric applications

Influence of the band offset on the performance of photodevices based on the c-Si/a-Si:H heterostructure

article published in 2001

Influence of the transducer configuration on the p-i-n image sensor resolution

Initial stages of microcrystalline silicon film growth

LSP image sensors based on SiC heterostructures

Laser scanned photodiodes (LSPs) for image sensing

Laser-scanned p-i-n photodiode (LSP) for image detection

Local piezoelectric properties of ZnO thin films prepared by RF-plasma-assisted pulsed-laser deposition method.

artículo científico publicado en 2010

Low Temperature Photoluminescence, Transient Photoconductivity and Microwave Reflection for Optical Properties and Transport in PLD-GaN

article

Memory effects in highly resistive p–i–n heterojunctions for optical applications

Morphological and optical properties of silicon thin films by PLD

Morphology and composition of GaN films grown by cyclic-pulsed laser deposition

article

New p–i–n Si:H imager configuration for spatial resolution improvement

New results on diffusion lengths measurements in wide bandgap semiconductors, obtained from steady state photocarrier gratings (SSPG)

Non-radiative and radiative properties of PLD-deposited polycrystalline GaN studied by UV ps-to-ns laser pulses

Numerical evaluation of amorphous siliconp‐i‐nsolar cell degradation

Optical Properties of Lead-Free NKN Films from Transmission and Spectral Ellipsometry

article

Optical and electronic properties of an amorphous silicon‐germanium alloy with a 1.28 eV optical gap

scholarly article by J. Kolodzey et al published 8 February 1988 in Applied Physics Letters

Optical properties of TiO2thin films prepared by chemical spray pyrolysis from aqueous solutions

Optical signal and image processing device optimized for optical readout

Optically addressed read–write device based on tandem heterostructure

Optoelectronic characterization of a-SIC:H stacked devices

Phase-pure a-SiC:H films prepared by closed chamber CVD

Photocapacitance measurements in irradiated a-Si:H based detectors

Photocarrier response time scanner

Photocurrent multiplication in ITO/SiOx/Si optical sensors

Photocurrent response times in amorphous silicon thin film transistors

article

Photoinduced excess carrier dynamics in PLD-grown ZnO

Photoluminescence decay in the ps time regime and structural properties of pulsed-laser deposited GaN

Photosensitivity of nanocrystalline ZnO films grown by PLD

Position‐dependent electronic properties of hydrogenated amorphous siliconp‐i‐ndiodes

Pulsed sub-band-gap photoexcitation of AlN

RF-plasma assisted PLD growth of Zn3N2 thin films

Radiation-induced defects in a-Si:H by 1.5MeV He4 particles studied by photoconductivity and photothermal deflection spectroscopy

Reply to the comment by S. Dannefaer et al. on the paper of H. E. Schaefer et al. on ?amorphous hydrogenated silicon studied by positron lifetime spectroscopy?

article

Secondary electron emission yield (SEY) in amorphous and graphitic carbon films prepared by PLD

Self-biasing effect in colour sensitive photodiodes based on double p-i-n a-SiC:H heterojunctions

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Sensor element for a metal–insulator–semiconductor camera system (MISCam)

Simultaneous depth profiling of constituents and impurities by elastic proton scattering in amorphous hydrogenated silicon films

Spatially-resolved photocapacitance measurements to study defects in a-Si:H based p–i–n particle detectors

Spontaneous emission enhancement in micropatterned GaN

Stability of GaN films under intense MeV He ion irradiation

Stability of the mobility-lifetime product of holes in undoped a-Si:H under illumination

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Structural and composition analysis of GaN films deposited by cyclic-PLD at different substrate temperatures

article

Study of trap states in zinc oxide (ZnO) thin films for electronic applications

Subbandgap absorption from photocurrent spectra in Al0.18GaN/GaN heterostructures

Thermalization and recombination in exponential band tail states

Transfer characteristic of zinc nitride based thin film transistors

article

Transient photoreflectance in Al0.18Ga0.82N/GaN thin film

Transport mechanism in high resistive silicon carbide heterostructures

scholarly article by P. Louro et al published December 2001 in Applied Surface Science

Tungsten trioxide nanostructured electrodes for organic dye sensitised solar cells

scholarly article by R. Ayouchi et al published 2014 in International Journal of Nanotechnology

Ungewöhnliche Beobachtung nach Hüft-TEP mit Metall/Metall-Gleitpaarung

artículo científico publicado en 2000

VIS/NIR detector based on μc-Si:H p–i–n structures

ZnO films grown by laser ablation with and without oxygen CVD

a-Si:H p–i–n structures with extreme i-layer thickness