Lista de obras - Bernd Jenichen - Dominio Público Uruguay

Adhesion in growth of defect‐free silicon over silicon oxide

article published in 1996

Alteration of first-order phase transition by stress cycles in a MnAs layer on step-bunchedGaAs(331)B

scholarly article in Physical Review B, vol. 79 no. 23, June 2009

Alternating Be and C doping for strain compensated GaAs/AlAs distributed Bragg reflectors

Analysis of reciprocal space maps of GaN(0001) films grown by molecular beam epitaxy

Anisotropic strain fields in granular GaAs:MnAs epitaxial layers: Towards self-assembly of magnetic nanoparticles embedded in GaAs

Anisotropies in the structural properties of strained (311) (In,Ga)As/GaAs-heterostructures

Axiotaxy of Bismuth Telluride Films on InP(111)B by High-Temperature Hot Wall Epitaxy

scholarly article by Yukihiko Takagaki et al published March 2017 in Crystal Growth & Design

Azimuthal reflection high-energy electron diffraction study of MnAs growth on GaAs(001) by molecular beam epitaxy

article

Bragg diffraction in a coherent X-ray scattering experiment

Combined molecular beam epitaxy and diffractometer system for in situ x-ray studies of crystal growth

article published in 2003

Comparison between the electronic dielectric functions of a GaAs/AlAs superlattice and its bulk components by spectroscopic ellipsometry using core levels

scientific article published on 01 July 1995

Comparison of MnAs layers on GaAs(113) surfaces grown by means of solid-phase epitaxy and conventional molecular-beam epitaxy

scholarly article in Physical Review B, vol. 80 no. 1, July 2009

Constrained phase coexistence in thin MBE-grown MnAs films on GaAs

article by Bernd Jenichen et al published April 2002 in Materials Science and Engineering B: Advanced Functional Solid-state Materials

Correlation between the structural and optical properties of spontaneously formed GaN nanowires: a quantitative evaluation of the impact of nanowire coalescence. ⬇️

artículo científico publicado en 2014

Correlation of structure and magnetism in GaAs with embedded Mn(Ga)As magnetic nanoclusters

Crystal defects in InGaAlAs layers grown on InP substrates by molecular beam epitaxy

Crystal defects in vertical cavity epitaxial structures on GaAs investigated by X-ray methods

article published in 1994

Crystal optics elements in a coherent x-ray scattering experiment

Cubic (In,Ga)N layers grown on GaAs(001) by dc plasma-assisted molecular beam epitaxy

Curvable collimator topography using the synchrotron source

Cyclotron-resonance-assisted photocurrents in surface states of a three-dimensional topological insulator based on a strained high-mobility HgTe film ⬇️

article

Deformations in (Al,Ga)As epitaxial layers wafer bonded on dissimilar substrates

Depth‐resolved measurement of lattice relaxation in Ga1−xInxAs/GaAs strained layer superlattices by means of grazing‐incidence x‐ray diffraction

Determination of the lateral periodicity of nanometer quantum dot arrays by triple crystal diffractometry

Different growth rates for catalyst-induced and self-induced GaN nanowires

Diffraction at GaAs/Fe3Si core/shell nanowires: The formation of nanofacets ⬇️

Distribution of structural domains in MnAs layers grown on GaAs substrates

Distribution of type-B minority domains in a type-A MnAs thin layer on GaAs(001)

Double Crystal Topography Compensating for the Strain in Processed Samples

Effect of growth temperature on the structural, morphological and magnetic properties of Fe films on GaN(0001)

Elastic versus Plastic Strain Relaxation in Coalesced GaN Nanowires: An X-Ray Diffraction Study ⬇️

Element substitution from substrates in Bi2Se3, Bi2Te3and Sb2Te3overlayers deposited by hot wall epitaxy

Endotaxy of MnSb into GaSb

Epitaxial Fe3Si/Ge/Fe3Si thin film multilayers grown on GaAs(001)

Epitaxial Heusler alloy films on GaAs(001) substrates

Epitaxial growth of Bi2Se3layers on InP substrates by hot wall epitaxy

Epitaxial orientation of MnAs layers grown on GaAs surfaces by means of solid-state crystallization

scholarly article in Physical Review B, vol. 78 no. 6, August 2008

Erratum: “Growth of M-plane MnAs on GaAs(111)B by molecular beam epitaxy” [Appl. Phys. Lett. 92, 101918 (2008)]

scholarly article published in Applied Physics Letters

Experimental and simulated X-ray contrast of striations for nearly plane waves in the laue case

Facetted growth of Fe 3 Si shells around GaAs nanowires on Si(111) ⬇️

Ferromagnetic Heusler alloy Co2FeSi films on GaAs(1 1 0) grown by molecular beam epitaxy

First order phase transition in MnAs nanodisks

First-order phase transition in MnAs disks on GaAs (001)

scholarly article in Physical Review B, vol. 73 no. 12, March 2006

Formation of a Monocrystalline, $M$-Plane AlN Layer by the Nitridation of $\gamma$-LiAlO$_{2}$(100)

GaAs-Fe₃Si core-shell nanowires: nanobar magnets

artículo científico publicado en 2013

Giant corrugations in Bi2Se3layers grown on high-index InP substrates

scholarly article in Physical Review B, vol. 87 no. 24, June 2013

Growth and Properties of Ferromagnet-SemiconDuctor Hetero-Structures for Spin Injection

Growth of Fe3Si/Ge/Fe3Si trilayers on GaAs(001) using solid-phase epitaxy

Growth of M-plane MnAs on GaAs(111)B by molecular beam epitaxy

article published in 2008

Growth of cubic GaN on Si(001) by plasma-assisted MBE

Growth of praseodymium oxide and silicate for high-k dielectrics by molecular beam epitaxy

scholarly article by Tatsuro Watahiki et al published April 2007 in Journal of Crystal Growth

Heteroepitaxial growth of lattice matched films on GaAs(001)

Hot wall epitaxy of Sb2Te3layers: coherent hetero-epitaxy on InAs(1 1 1) and Sb substitution in Cu-mediated growth

Hot wall epitaxy of topological insulator films

In situ X-ray diffraction study of epitaxial growth of ordered Fe3Si films

article published in 2007

In situ grazing incidence x-ray diffraction study of strain evolution during growth and postgrowth annealing of MnAs on GaAs(113)A

In situ investigation of MnAs/GaAs(001) growth and interface structure using synchrotron x-ray diffraction

In surface segregation in M-plane (In,Ga)N/GaN multiple quantum well structures

In2Se3 films produced by Bi substitution in the hot-wall-epitaxy growth of Bi2Se3 films on In-containing surfaces

Influence of growth conditions for GaAs quantum wells and composition fluctuations in Al(Ga)As barriers on exciton and electron localization

article

Influence of the interface composition of InAs/AlSb superlattices on their optical and structural properties

article

Inhomogeneous microstrain in cylindrical semiconductor heterostructures and its influence on the adiabatic motion of electrons

scholarly article in Physical Review B, vol. 86 no. 15, October 2012

Inhomogeneous strain in GaN nanowires determined from x-ray diffraction peak profiles

scholarly article in Physical Review B, vol. 86 no. 11, September 2012

Interface engineering for improved growth of GaSb on Si(111)

Interface roughness of InAs/AlSb superlattices investigated by x‐ray scattering

Interfacial roughness of Fe3Si/GaAs(001) films studied by X-ray crystal truncation rods

Interference effects in x‐ray double‐crystal rocking curves of Ga1−xAlxAs/GaAs laser structures and superlattices

Investigation of GaAs/AlAs multilayer systems for optical Bragg reflectors using x‐ray double crystal techniques

article published in 1993

Investigation of epitaxial lateral overgrowth by x‐ray topography

Investigation of interface abruptness and In content in (In,Ga)N/GaN superlattices

Investigation of the interface roughness of GaAs single quantum wells by X-ray diffractometry, reflectivity and diffuse scattering

artículo científico publicado en 1997

Island and pit kinetics on the growing GaAs (001) surface studied by synchrotron X-ray diffraction

Kinetic optimum of volmer-weber growth.

artículo científico publicado en 2009

Lateral periodicity and elastic stress relaxation in GaInAsP quantum wires on InP investigated by x-ray diffractometry

Lateral periodicity of elastic domains in MnAs/GaAs(001) epitaxial layers studied by high resolution X-ray diffraction

Lateral variations of the quantum well confinement energy reflected by SEM-cathodoluminescence

Lattice distortion of MnAs nanocrystals embedded in GaAs: Effect on the magnetic properties

Lattice dynamics of epitaxial strain-free interfaces

artículo científico publicado en 2018

Layer-by-layer growth of GaAs() studied by in situ synchrotron X-ray diffraction

Layer-by-layer growth of thin epitaxial Fe3Si films on GaAs (001)

Long-range order and thermal stability of thin Co2FeSi films on GaAs(1 1 1)B

Long-range order in thin epitaxialFe3Sifilms grown on GaAs(001)

scholarly article in Physical Review B, vol. 72 no. 7, August 2005

Luminescence of GaAs nanowires consisting of wurtzite and zinc-blende segments

scholarly article in Physical Review B, vol. 85 no. 4, January 2012

MBE growth and characterisation of AlxGa1−xSb layers on GaSb substrates

Macro- and micro-strain in GaN nanowires on Si(111).

artículo científico publicado en 2011

Magnetic and structural properties of ultrathin epitaxial Fe3Si films on GaAs(001)

Magnetic properties of GaAs-Fe3Si core-shell nanowires—A comparison of ensemble and single nanowire investigation

Micromechanics of MnAs nanocrystals embedded in GaAs

scholarly article in Physical Review B, vol. 72 no. 11, September 2005

Microstructure of epitaxial MnAs films on GaAs(001): An in situ x-ray study

MnAs nanoclusters embedded in GaAs studied by x-ray diffuse and coherent scattering

scholarly article in Physical Review B, vol. 67 no. 23, June 2003

Molecular beam epitaxy of graphene on ultra-smooth nickel: growth mode and substrate interactions

scholarly article by J M Wofford et al published 30 September 2014 in New Journal of Physics

Non-Ostwald coarsening of the GaAs(001) surface

scholarly article in Physical Review B, vol. 69 no. 16, April 2004

Novel Sb Induced Reconstruction of the (113) Surface of Ge

artículo científico publicado en 2002

Nucleation at the phase transition near 40°C in MnAs nanodisks

Nucleation, coarsening and kinetic scaling of two-dimensional islands on GaSb(001)

Periodic array of misfit dislocations at theMnAs∕GaAsinterface studied by synchrotron x-ray diffraction

scholarly article in Physical Review B, vol. 72 no. 15, October 2005

Periodic elastic domains of coexisting phases in epitaxial MnAs films on GaAs

Perpendicular magnetic anisotropy in the Heusler alloy Co2TiSi/GaAs(001) hybrid structure

Polarity-Induced Selective Area Epitaxy of GaN Nanowires

artículo científico publicado en 2016

Post-deposition growth kinetics of Ge on Ge(001)

Praseodymium silicide formation at the Pr2O3/Si interface

scholarly article by Tatsuro Watahiki et al published November 2008 in Applied Surface Science

Properties of GaN Nanowires Grown by Molecular Beam Epitaxy

Publisher’s Note: “Azimuthal reflection high-energy electron diffraction study of MnAs growth on GaAs(001) by molecular beam epitaxy” [J. Appl. Phys. 110, 023505 (2011)]

article

Quantitative evaluation of the broadening of x-ray diffraction, Raman, and photoluminescence lines by dislocation-induced strain in heteroepitaxial GaN films

RTK 2-a double-crystal x-ray topographic camera applying new principles

Real structure of lattice matched GaAs–Fe 3 Si core–shell nanowires ⬇️

Recovery kinetics of the GaAs(001) surface in molecular beam epitaxy studied by in situ X-ray diffraction

Reflection high-energy electron diffraction study of molecular beam epitaxy growth of Pr2O3 on Si(001)

article

Residual disorder and diffusion in thin Heusler alloy films

scholarly article in Physical Review B, vol. 86 no. 7, August 2012

Secondary-ion-mass spectrometry and high-resolution x-ray diffraction analyses of GaSb–AlGaSb heterostructures grown by molecular beam epitaxy

Semicoherent growth of Bi$_{2}$Te$_{3}$ layers on InP substrates by hot wall epitaxy

article published in 2014

Simulated X-ray contrast of striations for plane waves in the laue case

Solution growth of epitaxial semiconductor-on-insulator layers

Solving the phase problem in surface crystallography: Indirect excitation via a bulk reflection

article

Spatially resolved investigation of strain and composition variations in (In,Ga)N/GaN epilayers

article

Step-bunched Bi2Te3 and Bi2Se3 layers epitaxially grown on high-index InP substrates

Strain in buried quantum wires: Analytical calculations and x-ray diffraction study

artículo científico publicado en 2002

Strain relaxation in InxGa1-xAs/GaAs heterostructures

Strain-Mediated Phase Coexistence in Heteroepitaxial Films

artículo científico publicado en 2000

Strain-mediated phase coexistence in MnAs heteroepitaxial films on GaAs: An x-ray diffraction study

scholarly article in Physical Review B, vol. 66 no. 4, July 2002

Strong localization in InGaN layers with high In content grown by molecular-beam epitaxy

Structural and Optical Properties of GaN Layers Directly Grown on 6H-SiC(0001) by Plasma-Assisted Molecular Beam Epitaxy

Structural and magnetic order in MnAs films grown by molecular beam epitaxy on GaAs for spin injection

Structural and magnetic phase transition in MnAs(0001)/GaAs(111) epitaxial films

scholarly article in Physical Review B, vol. 68 no. 13, October 2003

Structural change upon annealing of amorphous GeSbTe grown on Si(111)

Structural characterization of thin GaN epilayers directly grown on on-axis 6H–SiC(0001) by plasma-assisted molecular beam epitaxy

article published in 1998

Structural properties of Co2TiSi films on GaAs(001)

Structural properties of GaN epilayers directly grown on on-axis 6H-SiC(0001) by plasma-assisted MBE

Structural properties of GaN layers on Si(001) grown by plasma-assisted molecular beam epitaxy

Structural properties of MnAs epitaxial films on GaAs: an in situ x-ray study

Structure analysis of epitaxial Gd2O3/Si(001) for high-k gate dielectric applications

Structure and stability of Pr2O3/Si(0 0 1) heterostructures grown by molecular beam epitaxy using a high temperature effusion source

Structure of Fe3Si/Al/Fe3Si thin film stacks on GaAs(001) ⬇️

Structure ofFe3Si∕GaAs(001)epitaxial films from x-ray crystal truncation rods

scholarly article in Physical Review B, vol. 77 no. 12, March 2008

Surface dynamics of III—V semiconductors studied by in situ X-ray diffraction during molecular beam epitaxy

Surface kinetics of GaAs(001), InAs(001) and GaSb(001) during MBE growth studied by in situ surface X-ray diffraction

Surface reconstructions of zinc-blende GaN/GaAs(001) in plasma-assisted molecular-beam epitaxy

artículo científico publicado en 1995

Synchrotron x-ray scattering study of thin epitaxial Pr2O3 films on Si(001)

Synthesis of SmB6films by Mg-assisted solid state reaction

The role of substrate quality on misfit dislocation formation in pseudomorphic high electron mobility transistor structures

article

Thermal stability of epitaxial Fe films on GaN(0001)

Thickness dependence of the magnetic properties of MnAs films on GaAs(001) and GaAs(113)A: Role of a natural array of ferromagnetic stripes

Two stages of post-growth recovery in molecular beam epitaxy: a surface X-ray diffraction study

Two-dimensional coarsening kinetics of reconstruction domains: GaAs(001)-beta(2 x 4).

artículo científico publicado en 2003

Vertical stress in liquid-phase epitaxy Si layers on SiO2/Si evaluated by X-ray double-crystal topography

Volmer-Weber growth of AlSb on Si(111)

Weak antilocalization and electron-electron interaction effects in Cu-doped Bi2Se3films

scholarly article in Physical Review B, vol. 85 no. 11, March 2012

X-ray diffraction peak profiles from heteroepitaxial structures with misfit dislocations

artículo científico publicado en 1997

X-ray diffraction peaks due to misfit dislocations in heteroepitaxial structures

scholarly article in Physical Review B, vol. 55 no. 3, January 1997

X-ray investigation of strain-compensated GaAs: C/AlAs: C distributed Bragg reflectors

artículo científico publicado en 1997

X-ray investigations of III–V compounds: layers, nanostructures, surfaces

“Cube-on-hexagon” orientation relationship for Fe onGaN(0001¯): The missing link in bcc/hcp epitaxy

scholarly article in Physical Review B, vol. 82 no. 12, September 2010

Lista de obras de Bernd Jenichen

Adhesion in growth of defect‐free silicon over silicon oxide

Alteration of first-order phase transition by stress cycles in a MnAs layer on step-bunchedGaAs(331)B

Alternating Be and C doping for strain compensated GaAs/AlAs distributed Bragg reflectors

Analysis of reciprocal space maps of GaN(0001) films grown by molecular beam epitaxy

Anisotropic strain fields in granular GaAs:MnAs epitaxial layers: Towards self-assembly of magnetic nanoparticles embedded in GaAs

Anisotropies in the structural properties of strained (311) (In,Ga)As/GaAs-heterostructures

Axiotaxy of Bismuth Telluride Films on InP(111)B by High-Temperature Hot Wall Epitaxy

Azimuthal reflection high-energy electron diffraction study of MnAs growth on GaAs(001) by molecular beam epitaxy

Bragg diffraction in a coherent X-ray scattering experiment

Combined molecular beam epitaxy and diffractometer system for in situ x-ray studies of crystal growth

Comparison between the electronic dielectric functions of a GaAs/AlAs superlattice and its bulk components by spectroscopic ellipsometry using core levels

Comparison of MnAs layers on GaAs(113) surfaces grown by means of solid-phase epitaxy and conventional molecular-beam epitaxy

Constrained phase coexistence in thin MBE-grown MnAs films on GaAs

Correlation between the structural and optical properties of spontaneously formed GaN nanowires: a quantitative evaluation of the impact of nanowire coalescence. ⬇️

Correlation of structure and magnetism in GaAs with embedded Mn(Ga)As magnetic nanoclusters

Crystal defects in InGaAlAs layers grown on InP substrates by molecular beam epitaxy

Crystal defects in vertical cavity epitaxial structures on GaAs investigated by X-ray methods

Crystal optics elements in a coherent x-ray scattering experiment

Cubic (In,Ga)N layers grown on GaAs(001) by dc plasma-assisted molecular beam epitaxy

Curvable collimator topography using the synchrotron source

Cyclotron-resonance-assisted photocurrents in surface states of a three-dimensional topological insulator based on a strained high-mobility HgTe film ⬇️

Deformations in (Al,Ga)As epitaxial layers wafer bonded on dissimilar substrates

Depth‐resolved measurement of lattice relaxation in Ga1−xInxAs/GaAs strained layer superlattices by means of grazing‐incidence x‐ray diffraction

Determination of the lateral periodicity of nanometer quantum dot arrays by triple crystal diffractometry

Different growth rates for catalyst-induced and self-induced GaN nanowires

Diffraction at GaAs/Fe3Si core/shell nanowires: The formation of nanofacets ⬇️

Distribution of structural domains in MnAs layers grown on GaAs substrates

Distribution of type-B minority domains in a type-A MnAs thin layer on GaAs(001)

Double Crystal Topography Compensating for the Strain in Processed Samples

Effect of growth temperature on the structural, morphological and magnetic properties of Fe films on GaN(0001)

Elastic versus Plastic Strain Relaxation in Coalesced GaN Nanowires: An X-Ray Diffraction Study ⬇️

Element substitution from substrates in Bi2Se3, Bi2Te3and Sb2Te3overlayers deposited by hot wall epitaxy

Endotaxy of MnSb into GaSb

Epitaxial Fe3Si/Ge/Fe3Si thin film multilayers grown on GaAs(001)

Epitaxial Heusler alloy films on GaAs(001) substrates

Epitaxial growth of Bi2Se3layers on InP substrates by hot wall epitaxy

Epitaxial orientation of MnAs layers grown on GaAs surfaces by means of solid-state crystallization

Erratum: “Growth of M-plane MnAs on GaAs(111)B by molecular beam epitaxy” [Appl. Phys. Lett. 92, 101918 (2008)]

Experimental and simulated X-ray contrast of striations for nearly plane waves in the laue case

Facetted growth of Fe 3 Si shells around GaAs nanowires on Si(111) ⬇️

Ferromagnetic Heusler alloy Co2FeSi films on GaAs(1 1 0) grown by molecular beam epitaxy

First order phase transition in MnAs nanodisks

First-order phase transition in MnAs disks on GaAs (001)

Formation of a Monocrystalline, $M$-Plane AlN Layer by the Nitridation of $\gamma$-LiAlO$_{2}$(100)

GaAs-Fe₃Si core-shell nanowires: nanobar magnets

Giant corrugations in Bi2Se3layers grown on high-index InP substrates

Growth and Properties of Ferromagnet-SemiconDuctor Hetero-Structures for Spin Injection

Growth of Fe3Si/Ge/Fe3Si trilayers on GaAs(001) using solid-phase epitaxy

Growth of M-plane MnAs on GaAs(111)B by molecular beam epitaxy

Growth of cubic GaN on Si(001) by plasma-assisted MBE

Growth of praseodymium oxide and silicate for high-k dielectrics by molecular beam epitaxy

Heteroepitaxial growth of lattice matched films on GaAs(001)

Hot wall epitaxy of Sb2Te3layers: coherent hetero-epitaxy on InAs(1 1 1) and Sb substitution in Cu-mediated growth

Hot wall epitaxy of topological insulator films

In situ X-ray diffraction study of epitaxial growth of ordered Fe3Si films

In situ grazing incidence x-ray diffraction study of strain evolution during growth and postgrowth annealing of MnAs on GaAs(113)A

In situ investigation of MnAs/GaAs(001) growth and interface structure using synchrotron x-ray diffraction

In surface segregation in M-plane (In,Ga)N/GaN multiple quantum well structures

In2Se3 films produced by Bi substitution in the hot-wall-epitaxy growth of Bi2Se3 films on In-containing surfaces

Influence of growth conditions for GaAs quantum wells and composition fluctuations in Al(Ga)As barriers on exciton and electron localization

Influence of the interface composition of InAs/AlSb superlattices on their optical and structural properties

Inhomogeneous microstrain in cylindrical semiconductor heterostructures and its influence on the adiabatic motion of electrons

Inhomogeneous strain in GaN nanowires determined from x-ray diffraction peak profiles

Interface engineering for improved growth of GaSb on Si(111)

Interface roughness of InAs/AlSb superlattices investigated by x‐ray scattering

Interfacial roughness of Fe3Si/GaAs(001) films studied by X-ray crystal truncation rods

Interference effects in x‐ray double‐crystal rocking curves of Ga1−xAlxAs/GaAs laser structures and superlattices

Investigation of GaAs/AlAs multilayer systems for optical Bragg reflectors using x‐ray double crystal techniques

Investigation of epitaxial lateral overgrowth by x‐ray topography

Investigation of interface abruptness and In content in (In,Ga)N/GaN superlattices

Investigation of the interface roughness of GaAs single quantum wells by X-ray diffractometry, reflectivity and diffuse scattering

Island and pit kinetics on the growing GaAs (001) surface studied by synchrotron X-ray diffraction

Kinetic optimum of volmer-weber growth.

Lateral periodicity and elastic stress relaxation in GaInAsP quantum wires on InP investigated by x-ray diffractometry

Lateral periodicity of elastic domains in MnAs/GaAs(001) epitaxial layers studied by high resolution X-ray diffraction

Lateral variations of the quantum well confinement energy reflected by SEM-cathodoluminescence

Lattice distortion of MnAs nanocrystals embedded in GaAs: Effect on the magnetic properties

Lattice dynamics of epitaxial strain-free interfaces

Layer-by-layer growth of GaAs() studied by in situ synchrotron X-ray diffraction