Lista de obras - Izabella Grzegory - Dominio Público Uruguay

Anomalous behaviour of the photoluminescence from GaN/AlGaN quantum wells

Barrier-to-well carrier dynamics of InGaN/GaN multi-quantum-wells grown by plasma assisted MBE on bulk GaN substrates

Carrier localization of as-grown n-type gallium nitride under large hydrostatic pressure

artículo científico publicado en 1996

Carrier recombination under one-photon and two-photon excitation in GaN epilayers

scientific article published on 02 February 2008

Coupling of LO Phonons to Excitons in GaN

artículo científico publicado en 1996

Critical Evaluation of Various Spontaneous Polarization Models and Induced Electric Fields in III-Nitride Multi-Quantum Wells

artículo científico publicado en 2021

DX-like behavior of oxygen in GaN

Different pressure behavior of GaN/AlGaN quantum structures grown along polar and nonpolar crystallographic directions

artículo científico publicado en 2009

Diluted Magnetic III-V Semiconductors With Mn For Possible Spintronic Applications

artículo científico publicado en 2007

Dynamics of trapping on donors and relaxation of the B-exciton in GaN

artículo científico publicado en 2003

Effect of pressure on exciton energies of homoepitaxial GaN

artículo científico publicado en 1998

Epitaxy on GaN bulk crystals

Exciton region reflectance of homoepitaxial GaN layers

artículo científico publicado en 1996

Experimental and theoretical evidence of the temperature-induced wurtzite to rocksalt phase transition in GaN under high pressure

artículo científico publicado en 2020

Fine structure of effective mass acceptors in gallium nitride

artículo científico publicado en 2003

GaN doped with beryllium—An effective light converter for white light emitting diodes

Growth and characterization of AlInN/GaInN quantum wells for high-speed intersubband devices at telecommunication wavelengths

artículo científico publicado en 2006

Growth of thin AlInN∕GaInN quantum wells for applications to high-speed intersubband devices at telecommunication wavelengths

artículo científico publicado en 2006

HVPE-GaN grown on MOCVD-GaN/sapphire template and ammonothermal GaN seeds: Comparison of structural, optical, and electrical properties

HVPE-GaN growth on GaN-based Advanced Substrates by Smart Cut™

HVPE-GaN growth on GaN-based advanced substrates by Smart Cut TM

artículo científico publicado en 2016

High quality m-plane GaN grown under nitrogen-rich conditions by plasma assisted molecular beam epitaxy

High-power pulse-current-operated violet light emitting lasers grown on bulk GaN substrates

Homoepitaxial HVPE GaN growth on non- and semi-polar seeds

artículo científico publicado en 2015

Impurity-Related Luminescence of Homoepitaxial GaN Studied with High Magnetic Fields

artículo científico publicado en 1998

Localization Effects in GaN/AlGaN Quantum Well - Photoluminescence Studies

artículo científico publicado en 2003

Luminescence Dynamics of Exciton Replicas in Homoepitaxial GaN Layers

artículo científico publicado en 1997

Luminescence and reflectivity in the exciton region of homoepitaxial GaN layers grown on GaN substrates

artículo científico publicado en 1996

Mismatch relaxation by stacking fault formation of AlN islands in AlGaN/GaN structures on m-plane GaN substrates

Morphological and structural characteristics of homoepitaxial GaN grown by metalorganic chemical vapour deposition (MOCVD)

artículo científico publicado en 1999

Nonlinear emission properties of an optically anisotropic GaN-based microcavity

scholarly article in Physical Review B, vol. 86 no. 16, October 2012

Observation of localization effects in InGaN/GaN quantum structures by means of the application of hydrostatic pressure

artículo científico publicado en 2004

Phonon Dispersion Curves in Wurtzite-Structure GaN Determined by Inelastic X-Ray Scattering

scientific article published on 01 January 2001

Preparation of Free-Standing GaN Substrates from Thick GaN Layers Crystallized by Hydride Vapor Phase Epitaxy on Ammonothermally Grown GaN Seeds

article

Pressure studies of gallium nitride: Crystal growth and fundamental electronic properties

artículo científico publicado en 1992

Step-flow anisotropy of them-plane GaN (11¯00) grown under nitrogen-rich conditions by plasma-assisted molecular beam epitaxy

scholarly article in Physical Review B, vol. 83 no. 24, June 2011

Surface states on GaN()(1×1)––an angle-resolved photoemission study

Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown ona-Plane GaN Substrates

Towards the identification of the dominant donor in GaN

artículo científico publicado en 1995

True-blue nitride laser diodes grown by plasma assisted MBE on low dislocation density GaN substrates

scholarly article published 4 March 2013

Lista de obras de Izabella Grzegory

Anomalous behaviour of the photoluminescence from GaN/AlGaN quantum wells

Barrier-to-well carrier dynamics of InGaN/GaN multi-quantum-wells grown by plasma assisted MBE on bulk GaN substrates

Carrier localization of as-grown n-type gallium nitride under large hydrostatic pressure

Carrier recombination under one-photon and two-photon excitation in GaN epilayers

Coupling of LO Phonons to Excitons in GaN

Critical Evaluation of Various Spontaneous Polarization Models and Induced Electric Fields in III-Nitride Multi-Quantum Wells

DX-like behavior of oxygen in GaN

Different pressure behavior of GaN/AlGaN quantum structures grown along polar and nonpolar crystallographic directions

Diluted Magnetic III-V Semiconductors With Mn For Possible Spintronic Applications

Dynamics of trapping on donors and relaxation of the B-exciton in GaN

Effect of pressure on exciton energies of homoepitaxial GaN

Epitaxy on GaN bulk crystals

Exciton region reflectance of homoepitaxial GaN layers

Experimental and theoretical evidence of the temperature-induced wurtzite to rocksalt phase transition in GaN under high pressure

Fine structure of effective mass acceptors in gallium nitride

GaN doped with beryllium—An effective light converter for white light emitting diodes

Growth and characterization of AlInN/GaInN quantum wells for high-speed intersubband devices at telecommunication wavelengths

Growth of thin AlInN∕GaInN quantum wells for applications to high-speed intersubband devices at telecommunication wavelengths

HVPE-GaN grown on MOCVD-GaN/sapphire template and ammonothermal GaN seeds: Comparison of structural, optical, and electrical properties

HVPE-GaN growth on GaN-based Advanced Substrates by Smart Cut™

HVPE-GaN growth on GaN-based advanced substrates by Smart Cut TM

High quality m-plane GaN grown under nitrogen-rich conditions by plasma assisted molecular beam epitaxy

High-power pulse-current-operated violet light emitting lasers grown on bulk GaN substrates

Homoepitaxial HVPE GaN growth on non- and semi-polar seeds

Impurity-Related Luminescence of Homoepitaxial GaN Studied with High Magnetic Fields

Localization Effects in GaN/AlGaN Quantum Well - Photoluminescence Studies

Luminescence Dynamics of Exciton Replicas in Homoepitaxial GaN Layers

Luminescence and reflectivity in the exciton region of homoepitaxial GaN layers grown on GaN substrates

Mismatch relaxation by stacking fault formation of AlN islands in AlGaN/GaN structures on m-plane GaN substrates

Morphological and structural characteristics of homoepitaxial GaN grown by metalorganic chemical vapour deposition (MOCVD)

Nonlinear emission properties of an optically anisotropic GaN-based microcavity

Observation of localization effects in InGaN/GaN quantum structures by means of the application of hydrostatic pressure

Phonon Dispersion Curves in Wurtzite-Structure GaN Determined by Inelastic X-Ray Scattering

Preparation of Free-Standing GaN Substrates from Thick GaN Layers Crystallized by Hydride Vapor Phase Epitaxy on Ammonothermally Grown GaN Seeds

Pressure studies of gallium nitride: Crystal growth and fundamental electronic properties

Step-flow anisotropy of them-plane GaN (11¯00) grown under nitrogen-rich conditions by plasma-assisted molecular beam epitaxy

Surface states on GaN()(1×1)––an angle-resolved photoemission study

Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown ona-Plane GaN Substrates

Towards the identification of the dominant donor in GaN

True-blue nitride laser diodes grown by plasma assisted MBE on low dislocation density GaN substrates