Lista de obras - Tadeusz Suski - Dominio Público Uruguay

450 nm (Al,In)GaN optical amplifier with double ‘j-shape’ waveguide for master oscillator power amplifier systems

artículo científico publicado en 2018

A Model of Radiative Recombination in (In,Al,Ga)N/GaN Structures with Significant Potential Fluctuations

Anomalous composition dependence of the band gap pressure coefficients in In-containing nitride semiconductors

artículo científico publicado en 2010

Band-to-band character of photoluminescence from InN and In-rich InGaN revealed by hydrostatic pressure studies

artículo científico publicado en 2006

Bandgap behavior of InGaN/GaN short period superlattices grown by metal-organic vapor phase epitaxy

Barrier-to-well carrier dynamics of InGaN/GaN multi-quantum-wells grown by plasma assisted MBE on bulk GaN substrates

Bowing of the band gap pressure coefficient in InxGa1−xN alloys

artículo científico publicado en 2008

Built-in electric field and large Stokes shift in near-lattice-matched GaN∕AlInN quantum wells

artículo científico publicado en 2008

Conduction band filling in In‐rich InGaN and InN under hydrostatic pressure

artículo científico publicado en 2008

Different pressure behavior of GaN/AlGaN quantum structures grown along polar and nonpolar crystallographic directions

artículo científico publicado en 2009

Direct observation of long distance lateral transport in InGaN/GaN quantum wells

artículo científico publicado en 2019

Effect of hydrogen during growth of quantum barriers on the properties of InGaN quantum wells

First‐Principles Calculation of Bandgaps of Al 1− x In x N Alloys and Short‐Period Al 1− x In x N/Al 1− y In y N Superlattices

artículo científico publicado en 2020

Graded-index separate confinement heterostructure InGaN laser diodes

artículo científico publicado en 2013

High pressure studies of radiative recombination mechanisms in InN

artículo científico publicado en 2007

Hydrostatic pressure: a unique tool in studies of quantum structures and light emitting devices based on group-III nitrides

article published in 2006

Impact of the substrate lattice constant on the emission properties of InGaN/GaN short-period superlattices grown by plasma assisted MBE

artículo científico publicado en 2019

In-clustering effects in InAlN and InGaN revealed by high pressure studies

artículo científico publicado en 2010

Influence of hydrogen pre-growth flow on indium incorporation into InGaN layers

Influence of quantum well inhomogeneities on absorption, spontaneous emission, photoluminescence decay time, and lasing in polar InGaN quantum wells emitting in the blue-green spectral region

artículo científico publicado en 2013

Influence of the substrate on the photo-luminescence dynamics in GaInN epilayers

artículo científico publicado en 2002

Monolithic cyan − violet InGaN/GaN LED array

Nitride light-emitting diodes for cryogenic temperatures

artículo científico publicado en 2020

Nitride superluminescent diodes with broadened emission spectrum fabricated using laterally patterned substrate.

artículo científico publicado en 2016

Nitride-based laser diodes and superluminescent diodes

article

Observation of localization effects in InGaN/GaN quantum structures by means of the application of hydrostatic pressure

artículo científico publicado en 2004

Optically pumped 500 nm InGaN green lasers grown by plasma-assisted molecular beam epitaxy

Peculiarities in the pressure dependence of photoluminescence in InAlN

Phase separation in InGaN multiple quantum wells annealed at high nitrogen pressures

Photoluminescence of InGaN/GaN quantum wells grown on c -plane substrates with locally variable miscut

Pressure-induced piezoelectric effects in near-lattice-matched GaN/AlInN quantum wells

artículo científico publicado en 2008

Properties of InGaN/GaN multiquantum wells grown on semipolar (20-21) substrates with different miscuts

Quantum-confined Stark effect and mechanisms of its screening in InGaN/GaN light-emitting diodes with a tunnel junction

artículo científico publicado en 2021

Role of conduction-band filling in the dependence of InN photoluminescence on hydrostatic pressure

artículo científico publicado en 2007

Role of localized donor states in transport and photoluminescence of InN revealed by hydrostatic pressure studies

artículo científico publicado en 2007

Scattering times in two-dimensional systems determined by tunneling spectroscopy

artículo científico publicado en 1993

Search for free holes in InN:Mg-interplay between surface layer and Mg-acceptor doped interior

artículo científico publicado en 2009

Strain-related phenomena in GaN thin films

artículo científico publicado en 1996

Surprisingly low built-in electric fields in quaternary AlInGaN heterostructures

artículo científico publicado en 2004

Switching of exciton character in double InGaN/GaN quantum wells

scholarly article in Physical Review B, vol. 98 no. 16, October 2018

The influence of alloy disorder and hydrostatic pressure on electrical and optical properties of In-rich InGaN compounds

artículo científico publicado en 2007

Theoretical simulations of radiative recombination time in polar InGaN quantum wells

XPS method as a useful tool for studies of quantum well epitaxial materials: Chemical composition and thermal stability of InGaN/GaN multilayers

article

Lista de obras de Tadeusz Suski

450 nm (Al,In)GaN optical amplifier with double ‘j-shape’ waveguide for master oscillator power amplifier systems

A Model of Radiative Recombination in (In,Al,Ga)N/GaN Structures with Significant Potential Fluctuations

Anomalous composition dependence of the band gap pressure coefficients in In-containing nitride semiconductors

Band-to-band character of photoluminescence from InN and In-rich InGaN revealed by hydrostatic pressure studies

Bandgap behavior of InGaN/GaN short period superlattices grown by metal-organic vapor phase epitaxy

Barrier-to-well carrier dynamics of InGaN/GaN multi-quantum-wells grown by plasma assisted MBE on bulk GaN substrates

Bowing of the band gap pressure coefficient in InxGa1−xN alloys

Built-in electric field and large Stokes shift in near-lattice-matched GaN∕AlInN quantum wells

Conduction band filling in In‐rich InGaN and InN under hydrostatic pressure

Different pressure behavior of GaN/AlGaN quantum structures grown along polar and nonpolar crystallographic directions

Direct observation of long distance lateral transport in InGaN/GaN quantum wells

Effect of hydrogen during growth of quantum barriers on the properties of InGaN quantum wells

First‐Principles Calculation of Bandgaps of Al 1− x In x N Alloys and Short‐Period Al 1− x In x N/Al 1− y In y N Superlattices

Graded-index separate confinement heterostructure InGaN laser diodes

High pressure studies of radiative recombination mechanisms in InN

Hydrostatic pressure: a unique tool in studies of quantum structures and light emitting devices based on group-III nitrides

Impact of the substrate lattice constant on the emission properties of InGaN/GaN short-period superlattices grown by plasma assisted MBE

In-clustering effects in InAlN and InGaN revealed by high pressure studies

Influence of hydrogen pre-growth flow on indium incorporation into InGaN layers

Influence of quantum well inhomogeneities on absorption, spontaneous emission, photoluminescence decay time, and lasing in polar InGaN quantum wells emitting in the blue-green spectral region

Influence of the substrate on the photo-luminescence dynamics in GaInN epilayers

Monolithic cyan − violet InGaN/GaN LED array

Nitride light-emitting diodes for cryogenic temperatures

Nitride superluminescent diodes with broadened emission spectrum fabricated using laterally patterned substrate.

Nitride-based laser diodes and superluminescent diodes

Observation of localization effects in InGaN/GaN quantum structures by means of the application of hydrostatic pressure

Optically pumped 500 nm InGaN green lasers grown by plasma-assisted molecular beam epitaxy

Peculiarities in the pressure dependence of photoluminescence in InAlN

Phase separation in InGaN multiple quantum wells annealed at high nitrogen pressures

Photoluminescence of InGaN/GaN quantum wells grown on c -plane substrates with locally variable miscut

Pressure-induced piezoelectric effects in near-lattice-matched GaN/AlInN quantum wells

Properties of InGaN/GaN multiquantum wells grown on semipolar (20-21) substrates with different miscuts

Quantum-confined Stark effect and mechanisms of its screening in InGaN/GaN light-emitting diodes with a tunnel junction

Role of conduction-band filling in the dependence of InN photoluminescence on hydrostatic pressure

Role of localized donor states in transport and photoluminescence of InN revealed by hydrostatic pressure studies

Scattering times in two-dimensional systems determined by tunneling spectroscopy

Search for free holes in InN:Mg-interplay between surface layer and Mg-acceptor doped interior

Strain-related phenomena in GaN thin films

Surprisingly low built-in electric fields in quaternary AlInGaN heterostructures

Switching of exciton character in double InGaN/GaN quantum wells

The influence of alloy disorder and hydrostatic pressure on electrical and optical properties of In-rich InGaN compounds

Theoretical simulations of radiative recombination time in polar InGaN quantum wells

XPS method as a useful tool for studies of quantum well epitaxial materials: Chemical composition and thermal stability of InGaN/GaN multilayers