A 3-phase model for VIS/NIR μC-Si:H p–i–n detectors

A two-dimensional numerical simulation of a non-uniformly illuminated amorphous silicon solar cell

An amorphous SIC/SI image photodetector with voltage-selectable spectral response

Analog readout image sensor based on p–i–n hydrogenated amorphous silicon

Bias controlled spectral sensitivity in a-SiC:H p–i–n devices

article

Bias-dependent photocurrent collection in p–i–n a-Si:H/SiC:H heterojunction

article

Colour filtering in a-SiC:H based p-i-n-p-i-n cells: A trade-off between bias polarity and absorption regions

article

Degradation of particle detectors based on a-Si:H by 1.5 Mev He4 and 1 MeV protons

article published in 2004

Fine-tuning of the spectral collection efficiency in multilayer junctions

ITO/SiOx/Si optical sensor with internal gain

Image capture devices based on p–i–n silicon carbides for biometric applications

Influence of the band offset on the performance of photodevices based on the c-Si/a-Si:H heterostructure

article published in 2001

Influence of the transducer configuration on the p-i-n image sensor resolution

LSP image sensors based on SiC heterostructures

Laser scanned photodiodes (LSPs) for image sensing

Laser-scanned p-i-n photodiode (LSP) for image detection

Membrane Selectivity versus Sensor Response in Hydrogenated Amorphous Silicon CHEMFETs Using a Semi-Empirical Model ⬇️

artículo científico publicado el 1 de octubre de 2011

Memory effects in highly resistive p–i–n heterojunctions for optical applications

Modeling a-SiC:H tandem pinpin and pinip photodiodes for color sensor application.

artículo científico publicado en 2009

Molecular Architecture and Electrical Properties in Evaporated Films of Cobalt Phthalocyanine

scientific article published on 01 September 2012

New p–i–n Si:H imager configuration for spatial resolution improvement

Optical signal and image processing device optimized for optical readout

Optically addressed read–write device based on tandem heterostructure

Optoelectronic characterization of a-SIC:H stacked devices

Photocapacitance measurements in irradiated a-Si:H based detectors

Photocarrier response time scanner

Photocurrent and spectral response analysis of a-SiC:H pinip and pinpin photodiodes.

artículo científico publicado en 2009

Photocurrent multiplication in ITO/SiOx/Si optical sensors

Radiation-induced defects in a-Si:H by 1.5MeV He4 particles studied by photoconductivity and photothermal deflection spectroscopy

Role of oxygen partial pressure on the properties of doped silicon oxycarbide microcrystalline layers produced by spatial separation techniques

Self-biasing effect in colour sensitive photodiodes based on double p-i-n a-SiC:H heterojunctions

article

Sensor element for a metal–insulator–semiconductor camera system (MISCam)

Spatially-resolved photocapacitance measurements to study defects in a-Si:H based p–i–n particle detectors

Transport mechanism in high resistive silicon carbide heterostructures

scholarly article by P. Louro et al published December 2001 in Applied Surface Science

VIS/NIR detector based on μc-Si:H p–i–n structures

a-Si:H p–i–n structures with extreme i-layer thickness