A 10 bit resolution readout channel with dynamic range compression for X-ray imaging at FELs

A 180-nm CMOS time-of-flight 3-D image sensor

A 2.4-GHz wireless alpha-ray sensor for remote monitoring and spectroscopy

A 2D imager for X-ray FELs with a 65 nm CMOS readout based on per-pixel signal compression and 10 bit A/D conversion

A 4096-pixel MAPS device with on-chip data sparsification

A Wireless Personal Sensor Node for Real Time Dosimetry of Interventional Radiology Operators

A novel silicon microstrip termination structure with all p-type multiguard and scribe-line implants

A novel test methodology for R ON and V TH monitoring in GaN HEMTs during switch-mode operation

A pixelated x-ray detector for diffraction imaging at next-generation high-rate FEL sources

A review of failure modes and mechanisms of GaN-based HEMTs

Advances in the development of pixel detector for the SuperB Silicon Vertex Tracker

Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations

Analysis of interface-trap effects in inversion-type InGaAs/ZrO 2 MOSFETs

Analysis of off-state leakage mechanisms in GaN-based MIS-HEMTs: Experimental data and numerical simulation

Analytical model for the ohmic-side interstrip resistance of double-sided silicon microstrip detectors

Application of the BJT detector for simple, low-cost, and low-power alpha-particle detection systems

BJT detector for α-particle and Radon detection and monitoring

BJT-based detector on high-resistivity silicon with integrated biasing structure

article

Beam test results for the SuperB-SVT thin striplet detector

Breakdown investigation in GaN-based MIS-HEMT devices

Challenges towards the simulation of GaN-based LEDs beyond the semiclassical framework

Characterization and Numerical Simulations of High Power Field-Plated pHEMTs

Characterization and analysis of trap-related effects in AlGaN–GaN HEMTs

Combined variability/sensitivity analysis in III-V and silicon FETs for future technological nodes

Comprehensive Capacitance–Voltage Simulation and Extraction Tool Including Quantum Effects for High- $k$ on SixGe1−x and InxGa1−xAs: Part II—Fits and Extraction From Experimental Data

Comprehensive Capacitance–Voltage Simulation and Extraction Tool Including Quantum Effects for High-k on Si x Ge1− x and In x Ga1− x As: Part I—Model Description and Validation

Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues

Correlation between dynamic Rdsou transients and Carbon related buffer traps in AlGaN/GaN HEMTs

Current Collapse and High-Electric-Field Reliability of Unpassivated GaN/AlGaN/GaN HEMTs

DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues

Defect-related tunneling contributions to subthreshold forward current in GaN-Based LEDs

Degradation of silicon AC-coupled microstrip detectors induced by radiation

Design and Characterization of Current-Assisted Photonic Demodulators in 0.18- $\mu\hbox{m}$ CMOS Technology

Design and TCAD simulation of planar p-on-n active-edge pixel sensors for the next generation of FELs

Design and TCAD simulations of planar active-edge pixel sensors for future XFEL applications

Design of an n-channel JFET on high-resistivity silicon for radiation-detector on-chip front-end electronics

Development of 130nm CMOS Monolithic Active Pixels with In-pixel Signal Processing

scholarly article published 2006

Development of a detector-compatible JFET technology on high-resistivity silicon

article published in 1998

Development of deep N-well monolithic active pixel sensors in a CMOS technology

ESD degradation and robustness of RGB LEDs and modules: An investigation based on combined electrical and optical measurements

Effects of border traps on transfer curve hysteresis and split-CV mobility measurement in InGaAs quantum-well MOSFETs

article

Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies

Electrical leakage phenomenon in heteroepitaxial cubic silicon carbide on silicon

scholarly article by Aiswarya Pradeepkumar et al published 7 June 2018 in Journal of Applied Physics

Energetic and spatial localisation of deep-level traps responsible for DC-to-RF dispersion effects in AlGaAs–GaAs HFETs

Engineering Barrier and Buffer Layers in InGaAs Quantum-Well MOSFETs

Errors Limiting Split-$CV$ Mobility Extraction Accuracy in Buried-Channel InGaAs MOSFETs

article

Experimental and Numerical Analysis of Hole Emission Process From Carbon-Related Traps in GaN Buffer Layers

Experimental and numerical analysis of gate- and drain-lag phenomena in AlGaAs/InGaAs PHEMTs

Experimental and numerical assessment of gate-lag phenomena in AlGaAs-GaAs heterostructure field-effect transistors (FETs)

article

Extension of impact-ionization multiplication coefficient measurements to high electric fields in advanced Si BJT's

Extraction of DC base parasitic resistance of bipolar transistors based on impact-ionization-induced base current reversal

article

Extraction of bulk generation lifetime and surface generation velocity in high-resistivity silicon by means of gated diodes

FOXFET biased microstrip detectors: an investigation of radiation sensitivity

article

Fabrication of novel high frequency and high breakdown InAlAs-InGaAs pHEMTs

Fabrication, Characterization and Numerical Simulation of High Breakdown Voltage pHEMTs

False surface-trap signatures induced by buffer traps in AlGaN-GaN HEMTs

First experimental results on active and slim-edge silicon sensors for XFEL

Forward and reverse characteristics of irradiated MOSFETs

Functional test of a Radon sensor based on a high-resistivity-silicon BJT detector

Gate-lag effects in AlGaAs/GaAs power HFET's

High-voltage operation of silicon devices for LHC experiments

Hot-electron-stress degradation in unpassivated GaN/AlGaN/GaN HEMTs on SiC

Impact of programming charge distribution on threshold voltage and subthreshold slope of NROM memory cells

Impact of temperature on surface-trap-induced gate-lag effects in GaAs heterostructure FETs

Improvement in breakdown characteristics with multiguard structures in microstrip silicon detectors for CMS

In-pixel conversion with a 10 bit SAR ADC for next generation X-ray FELs

Influence of Buffer Carbon Doping on Pulse and AC Behavior of Insulated-Gate Field-Plated Power AlGaN/GaN HEMTs

article published in 2014

Influence of impact-ionization-induced base current reversal on bipolar transistor parameters

article

Interface-Trap Effects in Inversion-Type Enhancement-Mode $\hbox{InGaAs/ZrO}_{2}$ N-Channel MOSFETs

Investigation of Efficiency-Droop Mechanisms in Multi-Quantum-Well InGaN/GaN Blue Light-Emitting Diodes

Investigation of High-Electric-Field Degradation Effects in AlGaN/GaN HEMTs

Laser and alpha particle characterization of floating-base BJT detector

Latest results of the R&D on CMOS MAPS for the Layer0 of the SuperB SVT

Light Sensitivity of Current DLTS and Its Implications on the Physics of DC-to-RF Dispersion in AlGaAs–GaAs HFETs

Low-noise readout channel with a novel dynamic signal compression for future X-FEL applications

Mechanisms of RF Current Collapse in AlGaN–GaN High Electron Mobility Transistors

article

Modeling challenges for high-efficiency visible light-emitting diodes

Modeling of light-addressable potentiometric sensors

Modelling of GaN HEMTs: From Device-Level Simulation to Virtual Prototyping

article published in 2016

Monolithic integration of Si-PIN diodes and n-channel double-gate JFET's for room temperature X-ray spectroscopy

scholarly article by G.-F.Dalla Betta et al published February 2001 in Nuclear Instruments and Methods in Physics Research

Monolithic integration of detectors and transistors on high-resistivity silicon

article

N–p–n bipolar-junction-transistor detector with integrated p–n–p biasing transistor—feasibility study, design and first experimental results

article

Off-state breakdown characteristics of AlGaN/GaN MIS-HEMTs for switching power applications

article published in 2015

On the accuracy of generation lifetime measurement in high-resistivity silicon using PN gated diodes

On-Chip Fast Data Sparsification for a Monolithic 4096-Pixel Device

Origin of hole-like peaks in current deep level transient spectroscopy of n-channel AlGaAs/GaAs heterostructure field-effect transistors

article

PFM2: A 32 × 32 readout chip for the PixFEL X-ray imager demonstrator

PFM2: a 32 × 32 processor for X-ray diffraction imaging at FELs

Performance evaluation of radiation sensors with internal signal amplification based on the BJT effect

Performance of a radon sensor based on a BJT detector on high-resistivity silicon

Physical investigation of trap-related effects in power HFETs and their reliability implications

Physics-based explanation of kink dynamics in AlGaAs/GaAs HFETs

Physics-based modeling and experimental implications of trap-assisted tunneling in InGaN/GaN light-emitting diodes

PixFEL: Enabling technologies, building blocks and architectures for advanced X-ray pixel cameras at the next generation FELs

article published in 2014

PixFEL: developing a fine pitch, fast 2D X-ray imager for the next generation X-FELs

Prediction of impact-ionization-induced snap-back in advanced Si n-p-n BJT's by means of a nonlocal analytical model for the avalanche multiplication factor

Proposal of a data sparsification unit for a mixed-mode MAPS detector

Punch-through characteristics of FOXFET biased detectors

article

Radiation effects on breakdown characteristics of multiguarded devices

Radiation tolerance of epitaxial silicon carbide detectors for electrons, protons and gamma-rays

scholarly article by F. Nava et al published June 2003 in Nuclear Instruments and Methods in Physics Research

Radiation tolerance of the FOXFET biasing scheme for AC-coupled Si microstrip detectors

article

Radiation-hard semiconductor detectors for SuperLHC

Radon alpha-ray detector based on a high-resistivity-silicon BJT and a low-cost readout electronics

Recent development on triple well 130 nm CMOS MAPS with in-pixel signal processing and data sparsification capability

scholarly article published 2007

Recent developments in 130 nm CMOS monolithic active pixel detectors

Recent developments on CMOS MAPS for the SuperB Silicon Vertex Tracker

Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives

article

Semiclassical simulation of trap-assisted tunneling in GaN-based light-emitting diodes

Si-PIN X-ray detector technology

Silicon PIN radiation detectors with on-chip front-end junction field effect transistors

article

Study of breakdown effects in silicon multiguard structures

Study on the origin of dc-to-RF dispersion effects in GaAs- and GaN-based beterostructure FETs

Surface effects on turn-off characteristics of AlGaAs/GaAs HFETs

Surface-Related Drain Current Dispersion Effects in AlGaN–GaN HEMTs

TCAD optimization of field-plated InAlAs-InGaAs HEMTs

The Impact of Light on Current DLTS and Gate-Lag Transients of AlGaAs–GaAs HFETs

The PixFEL project: Progress towards a fine pitch X-ray imaging camera for next generation FEL facilities

The PixFEL project: development of advanced X-ray pixel detectors for application at future FEL facilities

The effects of carbon on the bidirectional threshold voltage instabilities induced by negative gate bias stress in GaN MIS-HEMTs

artículo científico publicado en 2020

The front-end chip of the SuperB SVT detector

The impact of interface and border traps on current-voltage, capacitance-voltage, and split-CV mobility measurements in InGaAs MOSFETs

article

Threshold Voltage Statistical Variability and Its Sensitivity to Critical Geometrical Parameters in Ultrascaled InGaAs and Silicon FETs

Threshold voltage instabilities in D-mode GaN HEMTs for power switching applications

Trap characterization in buried-gate n-channel 6H-SiC JFETs

Trap energetic and spatial localization in buried-gate 6H-SiC JFETs by means of numerical device simulation

Trap-assisted tunneling contributions to subthreshold forward current in InGaN/GaN light-emitting diodes

Trap-assisted tunneling in InGaN/GaN LEDs: Experiments and physics-based simulation

Trapping and high field related issues in GaN power HEMTs

Two-dimensional numerical simulation of edge-generated currents in type-inverted, p/sup +/-n single-sided silicon microstrip detectors