Achieving low V T Ni-FUSI CMOS via lanthanide incorporation in the gate stack

Achieving low-VT Ni-FUSI CMOS via lanthanide incorporation in the gate stack

Crystallization resistance of barium titanate zirconate ultrathin films from aqueous CSD: a study of cause and effect

article published in 2009

Energy dependence of the optical potential for the 16O+144Sm system near the Coulomb barrier

scientific article published on 01 February 1989

High-k Dielectrics and Metal Gates for Future Generation Memory Devices

Hydrogen-Induced Resistive Switching in TiN/ALD $ \hbox{HfO}_{2}$/PEALD TiN RRAM Device

Low V t Ni-FUSI CMOS Technology using a DyO cap layer with either single or dual Ni-phases

NiO Thin Films Synthesized by Atomic Layer Deposition using Ni(dmamb)2 and Ozone as Precursors

Scaled X-bar TiN/HfO2/TiN RRAM cells processed with optimized plasma enhanced atomic layer deposition (PEALD) for TiN electrode

Switching mechanism in two-terminal vanadium dioxide devices

scientific article published on 27 March 2015