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Lista de obras de Ignacio Rey-Stolle

10 MeV proton irradiation effects on GaInP/GaAs/Ge concentrator solar cells and their component subcells

Analysis of germanium epiready wafers for III–V heteroepitaxy

scholarly article by Ignacio Rey-Stolle et al published November 2008 in Journal of Crystal Growth

Analysis of perimeter recombination in the subcells of GaInP/GaAs/Ge triple-junction solar cells

article published in 2014

Analysis of the surface state of epi-ready Ge wafers

Application of capacitance-based techniques to the characterization of multijunction solar cells

Application of photoreflectance to advanced multilayer structures for photovoltaics

Capacitance measurements for subcell characterization in multijunction solar cells

Characterization of antiphase domains on GaAs grown on Ge substrates by conductive atomic force microscopy for photovoltaic applications

Compositional analysis and evolution of defects formed on GaInP epilayers grown on Germanium

article

Degradation of Ge subcells by thermal load during the growth of multijunction solar cells

Differences between GaAs/GaInP and GaAs/AlInP interfaces grown by movpe revealed by depth profiling and angle-resolved X-ray photoelectron spectroscopies

Effect of Ge autodoping during III-V MOVPE growth on Ge substrates

Effect of Sb on the quantum efficiency of GaInP solar cells

Effect of annealing atmosphere in the properties of GaAs layers deposited by sputtering techniques on Si substrates

Extended Triple-Junction Solar Cell 3D Distributed Model: Application to Chromatic Aberration-Related Losses

GaInP/GaInAs/Ge triple junction solar cells for ultra high concentration

Highly conductive p + + -AlGaAs/n + + -GaInP tunnel junctions for ultra-high concentrator solar cells

article published in 2014

III–V multijunction solar cells for ultra-high concentration photovoltaics

Implications of low breakdown voltage of component subcells on external quantum efficiency measurements of multijunction solar cells

article published in 2015

In situ control of As dimer orientation on Ge(100) surfaces

In situ control of Si(100) and Ge(100) surface preparation for the heteroepitaxy of III-V solar cell architectures

In situ study of Ge(100) surfaces with tertiarybutylphosphine supply in vapor phase epitaxy ambient

Limiting factors on the semiconductor structure of III-V multijunction solar cells for ultra-high concentration (1000-5000 suns)

article by Mario Ochoa et al published 14 June 2016 in Progress in Photovoltaics

Nanoscale electrical characterization of arrowhead defects in GaInP thin films grown on Ge

On the use of I–V curves as a diagnosis tool for proper external quantum efficiency measurements of multijunction solar cells

On the use of Sb to improve the performance of GaInP subcells of multijunction solar cells

Open-atmosphere structural depth profiling of multilayer samples of photovoltaic interest using laser-induced plasma spectrometry

Optical in situ calibration of Sb for growing disordered GaInP by MOVPE

Optical in situ monitoring of hydrogen desorption from Ge(100) surfaces

Reflectance anisotropy spectroscopy assessment of the MOVPE nucleation of GaInP on germanium (100)

scholarly article by Enrique Barrigon et al published January 2011 in Journal of Crystal Growth

Roadmap towards efficiencies over 40% at ultra-high concentrations (> 1000 suns)

Si(100) versus Ge(100): Watching the interface formation for the growth of III-V-based solar cells on abundant substrates

Simulating III–V concentrator solar cells: A comparison of advantages and limitations of lumped analytical models; distributed analytical models and numerical simulation

Triple-junction solar cells for ultra-high concentrator applications

article published in 2011

Why can’t I measure the external quantum efficiency of the Ge subcell of my multijunction solar cell?

XPS as characterization tool for PV: From the substrate to complete III-V multijunction solar cells

XPS as characterization tool for PV: From the substrate to complete III-V multijunction solar cells

Ge(100) surfaces prepared in vapor phase epitaxy process ambient

Artículo científico publicado el 29 de febrero de 2012