Lista de obras - Martin Eickhoff - Dominio Público Uruguay

A review of MBE grown 0D, 1D and 2D quantum structures in a nanowire

Accurate determination of optical bandgap and lattice parameters of Zn1–xMgxO epitaxial films (0≤x≤0.3) grown by plasma-assisted molecular beam epitaxy on a-plane sapphire

AlN/Diamond np-junctions

article published in 2003

AlN/diamond heterojunction diodes

AlxGa1–xN—A New Material System for Biosensors

Bandgap engineering in a nanowire: self-assembled 0, 1 and 2D quantum structures

Bias-enhanced optical pH response of group III-nitride nanowires.

artículo científico publicado en 2012

Carrier confinement in GaN/AlxGa1−xN nanowire heterostructures (0<x≤1)

scholarly article in Physical Review B, vol. 84 no. 20, November 2011

Catalytic activity of enzymes immobilized on AlGaN∕GaN solution gate field-effect transistors

article

Chemical functionalization of GaN and AlN surfaces

Contactless electroreflectance studies of free exciton binding energy in Zn1-xMgxO epilayers

Detection of oxidising gases using an optochemical sensor system based on GaN/InGaN nanowires

Direct biofunctionalization of semiconductors: A survey

Doping-Induced Universal Conductance Fluctuations in GaN Nanowires

artículo científico publicado en 2015

Effect of Water Vapor and Surface Morphology on the Low Temperature Response of Metal Oxide Semiconductor Gas Sensors.

artículo científico publicado en 2015

Electrical transport properties of Ge-doped GaN nanowires

scientific article published on 11 March 2015

Electrochemical properties of GaN nanowire electrodes—influence of doping and control by external bias

article

Electrochemical stabilization of crystalline silicon with aromatic self-assembled monolayers in aqueous electrolytes

Electron injection-induced effects in Mn-doped GaN

article

Electron spin resonance of Zn1−xMgxO thin films grown by plasma-assisted molecular beam epitaxy

Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures

Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures - Part B: Sensor applications

Electroreflectance spectroscopy of Pt∕AlGaN∕GaN heterostructures exposed to gaseous hydrogen

Erratum: Recording of cell action potentials with AlGaN∕GaN field-effect transistors [Appl. Phys. Lett. 86, 033901 (2005)]

article

Exciton confinement in homo- and heteroepitaxial ZnO/Zn1 − xMgxO quantum wells with x < 0.1

Fabrication of freestanding GaN microstructures using AlN sacrificial layers

Functionalization of 6H-SiC surfaces with organosilanes

artículo científico publicado en 2008

GaN Quantum Dots as Optical Transducers in Field Effect Chemical Sensors

GaN nanodiscs embedded in nanowires as optochemical transducers

scientific article published on 25 May 2011

GaN quantum dots as optical transducers for chemical sensors

GaN-based heterostructures for sensor applications

GaN/AlN Axial Multi Quantum Well Nanowires for Optoelectronic Devices

Gallium nitride electrodes for membrane-based electrochemical biosensors

scholarly article by T Schubert et al published October 2009 in European Physical Journal E

Gas sensitive GaN/AlGaN-heterostructures

Ge doping of GaN beyond the Mott transition

Germanium doping of self-assembled GaN nanowires grown by plasma-assisted molecular beam epitaxy

scholarly article by Jörg Schörmann et al published 14 September 2013 in Journal of Applied Physics

Group III-nitride-based gas sensors for combustion monitoring

Growth study of nonpolar Zn1−xMgxO epitaxial films on a-plane bulk ZnO by plasma-assisted molecular beam epitaxy

High Precision, Electrochemical Detection of Reversible Binding of Recombinant Proteins on Wide Bandgap GaN Electrodes Functionalized with Biomembrane Models

High quality heteroepitaxial AlN films on diamond

Highly Si-doped AlN grown by plasma-assisted molecular-beam epitaxy

Hydrogen response mechanism of Pt–GaN Schottky diodes

article published in 2002

Hydrosilylation of crystalline silicon (111) and hydrogenated amorphous silicon surfaces: A comparative x-ray photoelectron spectroscopy study

III-nitride nanostructures for optical gas detection and pH sensing

Impact of silicon incorporation on the formation of structural defects in AlN

In situ monitoring of myenteric neuron activity using acetylcholinesterase-modified AlGaN/GaN solution-gate field-effect transistors.

artículo científico publicado en 2015

InGaN/GaN quantum dots as optical probes for the electric field at the GaN/electrolyte interface

Influence of crystal defects on the piezoresistive properties of 3C–SiC

Influence of crystal quality on the electronic properties of n-type 3C-SiC grown by low temperature low pressure chemical vapor deposition

Influence of surface oxides on hydrogen-sensitive Pd:GaN Schottky diodes

Influence of thermal oxidation on the electronic properties of Pt Schottky contacts on GaN grown by molecular-beam epitaxy

Integration of an opto-chemical detector based on group III-nitride nanowire heterostructures.

artículo científico publicado en 2015

Intraband absorption in self-assembled Ge-doped GaN/AlN nanowire heterostructures

artículo científico publicado en 2014

Long-lived excitons in GaN/AlN nanowire heterostructures

scholarly article in Physical Review B, vol. 91 no. 20, May 2015

Luminescence properties of highly Si-doped AlN

article published in 2006

Mg doping and its effect on the semipolar GaN(112¯2) growth kinetics

Mn-rich clusters in GaN: Hexagonal or cubic symmetry?

Nanostructure and strain in InGaN/GaN superlattices grown in GaN nanowires

artículo científico publicado en 2013

Nanotechnology for SAW devices on AlN epilayers

scholarly article by T. Palacios et al published May 2002 in Materials Science and Engineering B: Advanced Functional Solid-state Materials

Nearly stress-free substrates for GaN homoepitaxy

Nonpolarm-plane GaN/AlGaN heterostructures with intersubband transitions in the 5–10 THz band

artículo científico publicado en 2015

Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy - The influence of Si- and Mg-doping

Observation of ion-induced changes in the channel current of high electron mobility AlGaN/GaN transistors (HEMT)

article

Optical Analysis of Oxygen Self-Diffusion in Ultrathin CeO2 Layers at Low Temperatures

Optical characterization of AlGaN/GaN quantum disc structures in single nanowires

Optical emission of GaN/AlN quantum-wires - the role of charge transfer from a nanowire template.

artículo científico publicado en 2018

Optical properties and structural characteristics of ZnMgO grown by plasma assisted molecular beam epitaxy

Optical properties of GaN-based nanowires containing a single Al0.14Ga0.86N/GaN quantum disc

artículo científico publicado en 2013

Optical properties of Si- and Mg-doped gallium nitride nanowires grown by plasma-assisted molecular beam epitaxy

Optical properties of wurtzite/zinc-blende heterostructures in GaN nanowires

artículo científico publicado en 2011

Origin of energy dispersion inAlxGa1−xN/GaNnanowire quantum discs with low Al content

scholarly article in Physical Review B, vol. 82 no. 23, December 2010

P-type doping of semipolar GaN(11$ \bar 2 $2) by plasma-assisted molecular-beam epitaxy

Phase transition by Mg doping of N-face polarity GaN

Photocatalytic cleavage of self-assembled organic monolayers by UV-induced charge transfer from GaN substrates

artículo científico publicado en 2010

Photoluminescence polarization properties of single GaN nanowires containingAlxGa1−xN/GaNquantum discs

scholarly article in Physical Review B, vol. 81 no. 4, January 2010

Photoreflectance studies of (Al)Ga- and N-face AlGaN/GaN heterostructures

Piezoresistive properties of single crystalline, polycrystalline, and nanocrystalline n-type 3C-SiC

Piezoresistivity of AlxGa1−xN layers and AlxGa1−xN/GaN heterostructures

Polarity Assignment in ZnTe, GaAs, ZnO, and GaN-AlN Nanowires from Direct Dumbbell Analysis

artículo científico publicado en 2012

Polytype transition of N-face GaN:Mg from wurtzite to zinc-blende

Probing the Internal Electric Field in GaN/AlGaN Nanowire Heterostructures

artículo científico publicado en 2014

Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures

Quantitative analysis of immobilized penicillinase using enzyme-modified AlGaN/GaN field-effect transistors

artículo científico publicado en 2014

Radical formation at the gallium nitride nanowire–electrolyte interface by photoactivated charge transfer ⬇️

artículo científico publicado el 17 de julio de 2013

Recording of cell action potentials with AlGaN∕GaN field-effect transistors

article

Screening of the quantum-confined Stark effect in AlN/GaN nanowire superlattices by germanium doping ⬇️

Self-assembled GaN quantum wires on GaN/AlN nanowire templates

artículo científico publicado en 2012

Self-assembly of ordered wurtzite/rock salt heterostructures—A new view on phase separation in MgxZn1−xO

Short-wavelength, mid- and far-infrared intersubband absorption in nonpolar GaN/Al(Ga)N heterostructures

Strain effects and phonon-plasmon coupled modes in Si-doped AlN

Structural and electronic properties of GaN nanowires with embedded InxGa1−xN nanodisks

artículo científico publicado en 2015

Structural and interface properties of an AlN diamond ultraviolet light emitting diode

Temperature-dependent electric fields in GaN Schottky diodes studied by electroreflectance

The Surface Conductivity at the Diamond/Aqueous Electrolyte Interface

scientific article published on 04 March 2008

Thermal stability of Pt- and Ni-based Schottky contacts on GaN and Al0.31Ga0.69N

Triple-twin domains in Mg doped GaN wurtzite nanowires: structural and electronic properties of this zinc-blende-like stacking

scientific article published on 18 March 2009

UV Photosensing Characteristics of Nanowire-Based GaN/AlN Superlattices

artículo científico publicado en 2016

Ultrathin GaN/AlN/GaN solution-gate field effect transistor with enhanced resolution at low source-gate voltage

article

Vertical transport in group III-nitride heterostructures and application in AlN/GaN resonant tunneling diodes

ZnO/(ZnMg)O single quantum wells with high Mg content graded barriers

pH response of GaN surfaces and its application for pH-sensitive field-effect transistors

article

Lista de obras de Martin Eickhoff

A review of MBE grown 0D, 1D and 2D quantum structures in a nanowire

Accurate determination of optical bandgap and lattice parameters of Zn1–xMgxO epitaxial films (0≤x≤0.3) grown by plasma-assisted molecular beam epitaxy on a-plane sapphire

AlN/Diamond np-junctions

AlN/diamond heterojunction diodes

AlxGa1–xN—A New Material System for Biosensors

Bandgap engineering in a nanowire: self-assembled 0, 1 and 2D quantum structures

Bias-enhanced optical pH response of group III-nitride nanowires.

Carrier confinement in GaN/AlxGa1−xN nanowire heterostructures (0<x≤1)

Catalytic activity of enzymes immobilized on AlGaN∕GaN solution gate field-effect transistors

Chemical functionalization of GaN and AlN surfaces

Contactless electroreflectance studies of free exciton binding energy in Zn1-xMgxO epilayers

Detection of oxidising gases using an optochemical sensor system based on GaN/InGaN nanowires

Direct biofunctionalization of semiconductors: A survey

Doping-Induced Universal Conductance Fluctuations in GaN Nanowires

Effect of Water Vapor and Surface Morphology on the Low Temperature Response of Metal Oxide Semiconductor Gas Sensors.

Electrical transport properties of Ge-doped GaN nanowires

Electrochemical properties of GaN nanowire electrodes—influence of doping and control by external bias

Electrochemical stabilization of crystalline silicon with aromatic self-assembled monolayers in aqueous electrolytes

Electron injection-induced effects in Mn-doped GaN

Electron spin resonance of Zn1−xMgxO thin films grown by plasma-assisted molecular beam epitaxy

Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures

Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures - Part B: Sensor applications

Electroreflectance spectroscopy of Pt∕AlGaN∕GaN heterostructures exposed to gaseous hydrogen

Erratum: Recording of cell action potentials with AlGaN∕GaN field-effect transistors [Appl. Phys. Lett. 86, 033901 (2005)]

Exciton confinement in homo- and heteroepitaxial ZnO/Zn1 − xMgxO quantum wells with x < 0.1

Fabrication of freestanding GaN microstructures using AlN sacrificial layers

Functionalization of 6H-SiC surfaces with organosilanes

GaN Quantum Dots as Optical Transducers in Field Effect Chemical Sensors

GaN nanodiscs embedded in nanowires as optochemical transducers

GaN quantum dots as optical transducers for chemical sensors

GaN-based heterostructures for sensor applications

GaN/AlN Axial Multi Quantum Well Nanowires for Optoelectronic Devices

Gallium nitride electrodes for membrane-based electrochemical biosensors

Gas sensitive GaN/AlGaN-heterostructures

Ge doping of GaN beyond the Mott transition

Germanium doping of self-assembled GaN nanowires grown by plasma-assisted molecular beam epitaxy

Group III-nitride-based gas sensors for combustion monitoring

Growth study of nonpolar Zn1−xMgxO epitaxial films on a-plane bulk ZnO by plasma-assisted molecular beam epitaxy

High Precision, Electrochemical Detection of Reversible Binding of Recombinant Proteins on Wide Bandgap GaN Electrodes Functionalized with Biomembrane Models

High quality heteroepitaxial AlN films on diamond

Highly Si-doped AlN grown by plasma-assisted molecular-beam epitaxy

Hydrogen response mechanism of Pt–GaN Schottky diodes

Hydrosilylation of crystalline silicon (111) and hydrogenated amorphous silicon surfaces: A comparative x-ray photoelectron spectroscopy study

III-nitride nanostructures for optical gas detection and pH sensing

Impact of silicon incorporation on the formation of structural defects in AlN

In situ monitoring of myenteric neuron activity using acetylcholinesterase-modified AlGaN/GaN solution-gate field-effect transistors.

InGaN/GaN quantum dots as optical probes for the electric field at the GaN/electrolyte interface

Influence of crystal defects on the piezoresistive properties of 3C–SiC

Influence of crystal quality on the electronic properties of n-type 3C-SiC grown by low temperature low pressure chemical vapor deposition

Influence of surface oxides on hydrogen-sensitive Pd:GaN Schottky diodes

Influence of thermal oxidation on the electronic properties of Pt Schottky contacts on GaN grown by molecular-beam epitaxy

Integration of an opto-chemical detector based on group III-nitride nanowire heterostructures.

Intraband absorption in self-assembled Ge-doped GaN/AlN nanowire heterostructures

Long-lived excitons in GaN/AlN nanowire heterostructures

Luminescence properties of highly Si-doped AlN

Mg doping and its effect on the semipolar GaN(112¯2) growth kinetics

Mn-rich clusters in GaN: Hexagonal or cubic symmetry?

Nanostructure and strain in InGaN/GaN superlattices grown in GaN nanowires

Nanotechnology for SAW devices on AlN epilayers

Nearly stress-free substrates for GaN homoepitaxy

Nonpolarm-plane GaN/AlGaN heterostructures with intersubband transitions in the 5–10 THz band

Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy - The influence of Si- and Mg-doping

Observation of ion-induced changes in the channel current of high electron mobility AlGaN/GaN transistors (HEMT)

Optical Analysis of Oxygen Self-Diffusion in Ultrathin CeO2 Layers at Low Temperatures

Optical characterization of AlGaN/GaN quantum disc structures in single nanowires

Optical emission of GaN/AlN quantum-wires - the role of charge transfer from a nanowire template.

Optical properties and structural characteristics of ZnMgO grown by plasma assisted molecular beam epitaxy

Optical properties of GaN-based nanowires containing a single Al0.14Ga0.86N/GaN quantum disc

Optical properties of Si- and Mg-doped gallium nitride nanowires grown by plasma-assisted molecular beam epitaxy

Optical properties of wurtzite/zinc-blende heterostructures in GaN nanowires

Origin of energy dispersion inAlxGa1−xN/GaNnanowire quantum discs with low Al content

P-type doping of semipolar GaN(11$ \bar 2 $2) by plasma-assisted molecular-beam epitaxy

Phase transition by Mg doping of N-face polarity GaN

Photocatalytic cleavage of self-assembled organic monolayers by UV-induced charge transfer from GaN substrates

Photoluminescence polarization properties of single GaN nanowires containingAlxGa1−xN/GaNquantum discs

Photoreflectance studies of (Al)Ga- and N-face AlGaN/GaN heterostructures

Piezoresistive properties of single crystalline, polycrystalline, and nanocrystalline n-type 3C-SiC

Piezoresistivity of AlxGa1−xN layers and AlxGa1−xN/GaN heterostructures

Polarity Assignment in ZnTe, GaAs, ZnO, and GaN-AlN Nanowires from Direct Dumbbell Analysis