Lista de obras - Ph. Ebert - Dominio Público Uruguay

A STM study of the InP (110) surface

Atomic resolution in tunneling induced light emission from GaAs(110)

Atomic structure of point defects in compound semiconductor surfaces

Atomic-scale structure of the fivefold surface of an AlPdMn quasicrystal: A quantitative x-ray photoelectron diffraction analysis

scholarly article in Physical Review B, vol. 69 no. 13, April 2004

Atomically Resolved Electronic States and Correlated Magnetic Order at Termination Engineered Complex Oxide Heterointerfaces

artículo científico publicado en 2018

Band offsets at zincblende-wurtzite GaAs nanowire sidewall surfaces

Building Pb Nanomesas with Atomic-Layer Precision

artículo científico publicado en 2004

Catalystlike behavior of Si adatoms in the growth of monolayer Al film on Si(111)

scientific article published on 01 July 2010

Charge state dependent structural relaxation around anion vacancies on InP(110) and GaP(110) surfaces

artículo científico publicado en 1994

Charged steps on III-V compound semiconductor surfaces

artículo científico publicado en 1996

Compensation mechanisms in low-temperature-grown Ga1−xMnxAs investigated by scanning tunneling spectroscopy

article published in 2003

Contribution of Surface Resonances to Scanning Tunneling Microscopy Images: (110) Surfaces of III-V Semiconductors

scientific article published on 01 September 1996

Core and valence level photoemission and photoabsorption study of icosahedral Al–Pd–Mn quasicrystals

Correction of nonlinear lateral distortions of scanning probe microscopy images

artículo científico publicado en 2013

Coulomb Energy Determination of a Single Si Dangling Bond

artículo científico publicado en 2010

Cross-sectional scanning tunneling microscopy and spectroscopy of nonpolar GaN(11¯00) surfaces

Defects in III-V semiconductor surfaces

Determination of the charge carrier compensation mechanism in Te-doped GaAs by scanning tunneling microscopy

Direct Evidence for Shallow Acceptor States with Nonspherical Symmetry in GaAs

article

Direct determination of the interaction between vacancies on InP(110) surfaces

artículo científico publicado en 1996

Direct measurement and analysis of the conduction band density of states in dilutedGaAs1−xNxalloys

scholarly article in Physical Review B, vol. 82 no. 16, October 2010

Direct measurement of the band gap and Fermi level position at InN(112¯0)

Direct observation of electrical charges at dislocations in GaAs by cross-sectional scanning tunneling microscopy

article published in 2001

Dislocation bending in GaN/step-graded (Al,Ga)N/AlN buffer layers on Si(111) investigated by STM and STEM

Dislocation reaction on p-doped GaAs (011) observed by scanning tunnelling microscopy

Dopant mapping of Be δ-doped layers in GaAs tailored by counterdoping using scanning tunneling microscopy

Doping modulation in GaN imaged by cross-sectional scanning tunneling microscopy

Effect of the Si substrate structure on the growth of two-dimensional thin Ag films

Effective mass of a two-dimensional √3 × √3 Ga single atomic layer on Si(111)

article

Electron affinity and surface states of GaN m -plane facets: Implication for electronic self-passivation

scholarly article in Physical Review B, vol. 97 no. 11, March 2018

Electronic properties of dislocations in GaN investigated by scanning tunneling microscopy

Electronically Nonalloyed State of a Statistical Single Atomic Layer Semiconductor Alloy

Enhanced surface metallic density of states in icosahedral quasicrystals

scholarly article in Physical Review B, vol. 58 no. 2, July 1998

Erratum: “Stoichiometry changes by selective vacancy formation on (110) surfaces of III–V semiconductors: Influence of electronic effects” [J. Chem. Phys. 114, 445 (2001)]

scholarly article published in Journal of Chemical Physics

Evidence for a Cluster-Based Structure of AIPdMn Single Quasicrystals

artículo científico publicado en 1996

Evidence for a two-step evolution of the surface structure during heat treatment of cleaved icosahedral Al–Pd–Mn single quasicrystals

article

Evidence of deep traps in overgrown v-shaped defects in epitaxial GaN layers

article

Fermi-level pinning and intrinsic surface states of Al1−xInxN(101¯0) surfaces

Formation of anion vacancies by Langmuir evaporation from InP and GaAs (110) surfaces at low temperatures.

artículo científico publicado en 1995

Formation ofVP−Zncomplexes in bulk InP(Zn) by migration of P vacancies from the (110) surface

scholarly article in Physical Review B, vol. 73 no. 19, May 2006

Growing extremely thin bulklike metal film on a semiconductor surface: Monolayer Al(111) on Si(111)

Growth and electronic structure of alkali-metal adlayers on icosahedralAl70.5Pd21Mn8.5

scholarly article in Physical Review B, vol. 73 no. 5, February 2006

Hidden surface states at non-polar GaN (101¯0) facets: Intrinsic pinning of nanowires

Identification of surface anion antisite defects in (110) surfaces of III–V semiconductors

article published in 2001

Importance of bulk properties in the structure and evolution of cleavage surfaces of quasicrystals

Importance of point defect reactions for the atomic-scale roughness of III-V nanowire sidewalls

artículo científico publicado en 2019

Importance of quantum correction for the quantitative simulation of photoexcited scanning tunneling spectra of semiconductor surfaces

scholarly article in Physical Review B, vol. 93 no. 19, May 2016

In situ manipulation of scanning tunneling microscope tips without tip holder

artículo científico publicado en 2010

Incorporation of dopant atoms and defects in semiconductors: a microscopic view

Influence of grown-in voids on the structure of cleaved icosahedral Al–Pd–Mn quasicrystal surfaces

Influence of growth kinetics and chemical composition on the shape of voids in quasi-crystals

article

Intrinsic bandgap of cleaved ZnO(112¯0) surfaces

Intrinsic electronic properties of high-quality wurtzite InN

scholarly article in Physical Review B, vol. 94 no. 24, December 2016

Iuliacumite: A Novel Chemical Short-Range Order in a Two-Dimensional Wurtzite Single Monolayer InAs1-xSbx Shell on InAs Nanowires

scientific article published on 26 November 2019

Lazarevicite-type short-range ordering in ternary III-V nanowires

scholarly article in Physical Review B, vol. 94 no. 19, November 2016

Locally probing the screening potential at a metal-semiconductor interface

scholarly article in Physical Review B, vol. 81 no. 3, January 2010

Manganese adlayers on i-Al-Pd-Mn quasicrystal: growth and electronic structure.

artículo científico publicado en 2009

Meandering of overgrown v-shaped defects in epitaxial GaN layers

Microscopic identification of the compensation mechanisms in Si-doped GaAs

artículo científico publicado en 1996

Nano-scale properties of defects in compound semiconductor surfaces

scholarly article by Philipp Ebert published January 1999 in Surface Science Reports

Nanoscale dopant-induced dots and potential fluctuations in GaAs

Nanoscale fluctuations in the distribution of dopant atoms: Dopant-induced dots and roughness of electronic interfaces

Non-polar group-III nitride semiconductor surfaces

Nonicosahedral Equilibrium Overlayers of Icosahedral Quasicrystals

artículo científico publicado en 2005

Nonstoichiometric Low-Temperature Grown GaAs Nanowires

Origin of nanoscale potential fluctuations in two-dimensional semiconductors

Phosphorus vacancies and adatoms on GaP(110) surfaces studied by scanning tunneling microscopy

Photodriven Dipole Reordering: Key to Carrier Separation in Metalorganic Halide Perovskites

scientific article published on 27 March 2019

Polarity-dependent pinning of a surface state

scholarly article in Physical Review B, vol. 91 no. 20, May 2015

Probing defect states in polycrystalline GaN grown on Si(111) by sub-bandgap laser-excited scanning tunneling spectroscopy

Probing the step structure of buried metal/semiconductor interfaces using quantized electron states: The case of Pb on Si(111) 6×6-Au

Quantitative description of photoexcited scanning tunneling spectroscopy and its application to the GaAs(110) surface

scholarly article in Physical Review B, vol. 91 no. 23, June 2015

Quantitative determination of local potential values in inhomogeneously doped semiconductors by scanning tunneling microscopy

scholarly article in Physical Review B, vol. 84 no. 8, August 2011

Quantitative determination of the metastability of flat Ag overlayers on GaAs(110)

scientific article published on 14 December 2001

Quantum size effect induced dilute atomic layers in ultrathin Al films

scholarly article in Physical Review B, vol. 76 no. 3, July 2007

Quantum size effects in the nonmetal to metal transition of two-dimensional Al islands

scholarly article in Physical Review B, vol. 76 no. 23, December 2007

Quasicrystalline epitaxial single element monolayers on icosahedral Al-pd-mn and decagonal Al-ni-co quasicrystal surfaces

artículo científico publicado en 2002

Repulsive interactions between dislocations and overgrown v-shaped defects in epitaxial GaN layers

article published in 2013

Resistive switching in optoelectronic III-V materials based on deep traps

artículo científico publicado en 2018

Reverse mass transport during capping of In0.5Ga0.5As/GaAs quantum dots

Scanning Tunneling Spectroscopy of Ag Films: The Effect of Periodic versus Quasiperiodic Modulation

artículo científico publicado en 2006

Scanning tunneling microscopy of defects in quasiperiodically ordered surfaces

Scanning tunneling microscopy on unpinnedGaN(11¯00)surfaces: Invisibility of valence-band states

scholarly article in Physical Review B, vol. 80 no. 8, August 2009

Scanning-tunneling-microscope tip-induced migration of vacancies on GaP(110)

artículo científico publicado en 1993

Spontaneous 2D Accumulation of Charged Be Dopants in GaAsp−nSuperlattices

scientific article published on 23 February 2006

Stoichiometry changes by selective vacancy formation on (110) surfaces of III–V semiconductors: Influence of electronic effects

Strain and compositional fluctuations in Al0.81In0.19N/GaN heterostructures

article

Structure and composition of cleaved and heat-treated tenfold surfaces of decagonal Al–Ni–Co quasicrystals

article

Structure and electronic spectroscopy of steps on GaAs(110) surfaces

Surface states and origin of the Fermi level pinning on nonpolar GaN(11¯00) surfaces

Symmetric Versus Nonsymmetric Structure of the Phosphorus Vacancy on InP(110)

artículo científico publicado en 2000

Temperature dependent vacancy concentrations on InP(110) surfaces

Thermal formation of Zn-dopant-vacancy defect complexes on InP(110) surfaces

artículo científico publicado en 1996

Three- to two-dimensional transition in electrostatic screening of point charges at semiconductor surfaces studied by scanning tunneling microscopy

scholarly article in Physical Review B, vol. 80 no. 24, December 2009

Tracking the subsurface path of dislocations in GaN using scanning tunneling microscopy

Tuning Band Gap and Work Function Modulations in Monolayer hBN/Cu(111) Heterostructures with Moiré Patterns

artículo científico publicado en 2018

Lista de obras de Ph. Ebert

A STM study of the InP (110) surface

Atomic resolution in tunneling induced light emission from GaAs(110)

Atomic structure of point defects in compound semiconductor surfaces

Atomic-scale structure of the fivefold surface of an AlPdMn quasicrystal: A quantitative x-ray photoelectron diffraction analysis

Atomically Resolved Electronic States and Correlated Magnetic Order at Termination Engineered Complex Oxide Heterointerfaces

Band offsets at zincblende-wurtzite GaAs nanowire sidewall surfaces

Building Pb Nanomesas with Atomic-Layer Precision

Catalystlike behavior of Si adatoms in the growth of monolayer Al film on Si(111)

Charge state dependent structural relaxation around anion vacancies on InP(110) and GaP(110) surfaces

Charged steps on III-V compound semiconductor surfaces

Compensation mechanisms in low-temperature-grown Ga1−xMnxAs investigated by scanning tunneling spectroscopy

Contribution of Surface Resonances to Scanning Tunneling Microscopy Images: (110) Surfaces of III-V Semiconductors

Core and valence level photoemission and photoabsorption study of icosahedral Al–Pd–Mn quasicrystals

Correction of nonlinear lateral distortions of scanning probe microscopy images

Coulomb Energy Determination of a Single Si Dangling Bond

Cross-sectional scanning tunneling microscopy and spectroscopy of nonpolar GaN(11¯00) surfaces

Defects in III-V semiconductor surfaces

Determination of the charge carrier compensation mechanism in Te-doped GaAs by scanning tunneling microscopy

Direct Evidence for Shallow Acceptor States with Nonspherical Symmetry in GaAs

Direct determination of the interaction between vacancies on InP(110) surfaces

Direct measurement and analysis of the conduction band density of states in dilutedGaAs1−xNxalloys

Direct measurement of the band gap and Fermi level position at InN(112¯0)

Direct observation of electrical charges at dislocations in GaAs by cross-sectional scanning tunneling microscopy

Dislocation bending in GaN/step-graded (Al,Ga)N/AlN buffer layers on Si(111) investigated by STM and STEM

Dislocation reaction on p-doped GaAs (011) observed by scanning tunnelling microscopy

Dopant mapping of Be δ-doped layers in GaAs tailored by counterdoping using scanning tunneling microscopy

Doping modulation in GaN imaged by cross-sectional scanning tunneling microscopy

Effect of the Si substrate structure on the growth of two-dimensional thin Ag films

Effective mass of a two-dimensional √3 × √3 Ga single atomic layer on Si(111)

Electron affinity and surface states of GaN m -plane facets: Implication for electronic self-passivation

Electronic properties of dislocations in GaN investigated by scanning tunneling microscopy

Electronically Nonalloyed State of a Statistical Single Atomic Layer Semiconductor Alloy

Enhanced surface metallic density of states in icosahedral quasicrystals

Erratum: “Stoichiometry changes by selective vacancy formation on (110) surfaces of III–V semiconductors: Influence of electronic effects” [J. Chem. Phys. 114, 445 (2001)]

Evidence for a Cluster-Based Structure of AIPdMn Single Quasicrystals

Evidence for a two-step evolution of the surface structure during heat treatment of cleaved icosahedral Al–Pd–Mn single quasicrystals

Evidence of deep traps in overgrown v-shaped defects in epitaxial GaN layers

Fermi-level pinning and intrinsic surface states of Al1−xInxN(101¯0) surfaces

Formation of anion vacancies by Langmuir evaporation from InP and GaAs (110) surfaces at low temperatures.

Formation ofVP−Zncomplexes in bulk InP(Zn) by migration of P vacancies from the (110) surface

Growing extremely thin bulklike metal film on a semiconductor surface: Monolayer Al(111) on Si(111)

Growth and electronic structure of alkali-metal adlayers on icosahedralAl70.5Pd21Mn8.5

Hidden surface states at non-polar GaN (101¯0) facets: Intrinsic pinning of nanowires

Identification of surface anion antisite defects in (110) surfaces of III–V semiconductors

Importance of bulk properties in the structure and evolution of cleavage surfaces of quasicrystals

Importance of point defect reactions for the atomic-scale roughness of III-V nanowire sidewalls

Importance of quantum correction for the quantitative simulation of photoexcited scanning tunneling spectra of semiconductor surfaces

In situ manipulation of scanning tunneling microscope tips without tip holder

Incorporation of dopant atoms and defects in semiconductors: a microscopic view

Influence of grown-in voids on the structure of cleaved icosahedral Al–Pd–Mn quasicrystal surfaces

Influence of growth kinetics and chemical composition on the shape of voids in quasi-crystals

Intrinsic bandgap of cleaved ZnO(112¯0) surfaces

Intrinsic electronic properties of high-quality wurtzite InN

Iuliacumite: A Novel Chemical Short-Range Order in a Two-Dimensional Wurtzite Single Monolayer InAs1-xSbx Shell on InAs Nanowires

Lazarevicite-type short-range ordering in ternary III-V nanowires

Locally probing the screening potential at a metal-semiconductor interface

Manganese adlayers on i-Al-Pd-Mn quasicrystal: growth and electronic structure.

Meandering of overgrown v-shaped defects in epitaxial GaN layers

Microscopic identification of the compensation mechanisms in Si-doped GaAs

Nano-scale properties of defects in compound semiconductor surfaces

Nanoscale dopant-induced dots and potential fluctuations in GaAs

Nanoscale fluctuations in the distribution of dopant atoms: Dopant-induced dots and roughness of electronic interfaces

Non-polar group-III nitride semiconductor surfaces

Nonicosahedral Equilibrium Overlayers of Icosahedral Quasicrystals

Nonstoichiometric Low-Temperature Grown GaAs Nanowires

Origin of nanoscale potential fluctuations in two-dimensional semiconductors

Phosphorus vacancies and adatoms on GaP(110) surfaces studied by scanning tunneling microscopy

Photodriven Dipole Reordering: Key to Carrier Separation in Metalorganic Halide Perovskites

Polarity-dependent pinning of a surface state

Probing defect states in polycrystalline GaN grown on Si(111) by sub-bandgap laser-excited scanning tunneling spectroscopy

Probing the step structure of buried metal/semiconductor interfaces using quantized electron states: The case of Pb on Si(111) 6×6-Au

Quantitative description of photoexcited scanning tunneling spectroscopy and its application to the GaAs(110) surface

Quantitative determination of local potential values in inhomogeneously doped semiconductors by scanning tunneling microscopy

Quantitative determination of the metastability of flat Ag overlayers on GaAs(110)

Quantum size effect induced dilute atomic layers in ultrathin Al films

Quantum size effects in the nonmetal to metal transition of two-dimensional Al islands

Quasicrystalline epitaxial single element monolayers on icosahedral Al-pd-mn and decagonal Al-ni-co quasicrystal surfaces

Repulsive interactions between dislocations and overgrown v-shaped defects in epitaxial GaN layers

Resistive switching in optoelectronic III-V materials based on deep traps