A systematic study of light extraction efficiency enhancement depended on sapphire flipside surface patterning by femtosecond laser

Advantages of the time-resolved four-wave mixing technique for studies of non-equilibrium carrier dynamics in bulk semiconductors and structures

All-optical characterization of carrier lifetimes and diffusion lengths in MOCVD-, ELO-, and HVPE- grown GaN

Application of picosecond four-wave mixing and photoluminescence techniques for investigation of carrier dynamics in bulk crystals and heterostructures of GaN

article

Azochromophore isomerization dynamics: From monomers to polymers

article

Carrier Diffusivity in Highly Excited Bulk SiC, GaN, and Diamond Crystals by Optical Probes

Carrier diffusion and recombination in highly excited InGaN/GaN heterostructures

Carrier dynamics in Fe-doped GaN epilayers

article

Carrier dynamics in GaN layers overgrown on nanocolumnar structures

article

Carrier dynamics in InGaN/GaN multiple quantum wells based on different polishing processes of sapphire substrate

Carrier dynamics in blue and green emitting InGaN MQWs

Carrier dynamics in coalescence overgrowth of GaN nanocolumns

article

Carrier lifetime, diffusion length and mobility in (100) CVD diamond samples pre-treated in an O2/H2-plasma

article

Carrier transport and recombination in InGaN/GaN heterostructures, studied by optical four-wave mixing technique

article

Characterization of differently grown GaN epilayers by time-resolved four-wave mixing technique

article published in 2005

Contribution of dislocations to carrier recombination and transport in highly excited ELO and HVPE GaN layers

Defect study of GaN based LED structure by electron beam induced current

Determination of carrier diffusion length in MOCVD-grown GaN epilayers on sapphire by optical techniques

Determination of free carrier bipolar diffusion coefficient and surface recombination velocity of undoped GaN epilayers

Differential carrier lifetime in InGaN-based light-emitting diodes obtained by small-signal frequency-domain measurements

Diffusion and recombination of degenerate carrier plasma in GaN

article published in 2009

Direct study of nonlinear carrier recombination in InGaN quantum well structures

Dislocation-density Dependent Carrier Lifetime and Stimulated Recombination Threshold in GaN

Dynamics of free carrier absorption in InN layers

article

Enhancing Thermal Stability and Lifetime of Solid-State Dye-Sensitized Solar Cells via Molecular Engineering of the Hole-Transporting Material Spiro-OMeTAD

article

Facet analysis of truncated pyramid semi-polar GaN grown on Si(100) with rare-earth oxide interlayer

Growth of BGaN epitaxial layers using close-coupled showerhead MOCVD

Growth of InN and In-Rich InGaN Layers on GaN Templates by Pulsed Metalorganic Chemical Vapor Deposition

Heterodyne detection scheme for light-induced transient grating experiment

High-excitation luminescence properties of m-plane GaN grown on LiAlO2 substrates

Holographic study of ultrafast optical excitation in GaN film induced by nonlinear propagation of light

artículo científico publicado en 2012

Impact of Diffusivity to Carrier Recombination Rate in Nitride Semiconductors: From Bulk GaN to (In,Ga)N Quantum Wells

Impact of a superlattice on electrical properties of AlGaN/GaN/sapphire 2DEG structures

Impact of carrier localization, recombination, and diffusivity on excited state dynamics in InGaN/GaN quantum wells

article

Implementation of diffractive optical element in four-wave mixing scheme for ex situ characterization of hydride vapor phase epitaxy-grown GaN layers

In x Ga 1−x N performance as a band-gap-tunable photo-electrode in acidic and basic solutions

Influence of metalorganic precursors flow interruption timing on green InGaN multiple quantum wells

Layer thickness dependent carrier recombination rate in HVPE GaN

Light-induced reflectivity transients in black-Si nanoneedles

Multifunctional red phosphorescent bis-cyclometallated iridium complexes based on 2-phenyl-1,2,3-benzotriazole ligand and carbazolyl moieties

scholarly article by Tadas Malinauskas et al published March 2011 in Tetrahedron

Nonequilibrium carrier dynamics in heavily p-doped GaAs

article

Nonlinear Optical Techniques for Characterization of Wide Bandgap Semiconductor Electronic Properties: III-nitrides, SiC, and Diamonds

Nonlinear carrier recombination and transport features in highly excited InN layer

Optical and electron beam studies of carrier transport in quasibulk GaN

Optical and structural properties of BGaN layers grown on different substrates

Optical evaluation of carrier lifetime and diffusion length in synthetic diamonds

article published in 2008

Optical monitoring of nonequilibrium carrier diffusion in single crystalline CVD and HPHT diamonds under high optical excitation

Optical monitoring of nonequilibrium carrier lifetime in freestanding GaN by time-resolved four-wave mixing and photoluminescence techniques

Optical nonlinearities and carrier dynamics in semi-insulating crystals

Optical properties and carrier dynamics in differently strained GaN epilayers grown on Si by MOVPE

Peculiarities of galvanomagnetic effects in GaN epilayers and GaN/InGaN quantum wells

Peculiarities of photoluminescence efficiency dependence on excitation intensity in GaN/Al2O3epilayers

Photoelectric properties of highly excited GaN:Fe epilayers, grown by modulation- and continuous-doping techniques

article published in 2007

Photoluminescence ofa -plane GaN: comparison between MOCVD and HVPE grown layers

Recombination of free and bound excitons in GaN

article by Bo Monemar et al published September 2008 in Physica Status Solidi B

Relationships Between Strain and Recombination in Intermediate Growth Stages of GaN

Solar water splitting: Efficiency discussion

article published in 2016

Structural defect-related emissions in nonpolar a-plane GaN

Studies of carrier dynamics in epitaxial heterostructures by nonlinear optical and microwave techniques

Study of carrier recombination transient characteristics in MOCVD grown GaN dependent on layer thickness

Study of the interaction of salicyl aldehydes with epichlorohydrin: a simple, convenient, and efficient method for the synthesis of 3,6-epoxy[1,5]dioxocines

Suppression of surface recombination in surface plasmon coupling with an InGaN/GaN multiple quantum well sample.

artículo científico publicado en 2011

The determination of high-density carrier plasma parameters in epitaxial layers, semi-insulating and heavily doped crystals of 4H-SiC by a picosecond four-wave mixing technique

Time-resolved spectroscopy of excitons bound at shallow neutral donors in HVPE GaN

article by Bo Monemar et al published April 2006 in Physica B

Transient photoluminescence of shallow donor bound excitons in GaN

article by Bo Monemar et al published 6 December 2010 in Physical Review B

Ultrafast nonlinear dynamics in thin GaN films studied by femtosecond digital holography