Lista de obras - Victor Sapega - Dominio Público Uruguay

Addressing the exciton fine structure in colloidal nanocrystals: the case of CdSe nanoplatelets

artículo científico publicado en 2017

Coherent Magnetization Precession in Ferromagnetic (Ga,Mn)As Induced by Picosecond Acoustic Pulses

artículo científico publicado en 2010

Colossal magnetic moment of Gd in GaN.

artículo científico publicado en 2005

Dynamic spin polarization by orientation-dependent separation in a ferromagnet-semiconductor hybrid.

artículo científico publicado en 2012

Electron and Hole g-Factors and Spin Dynamics of Negatively Charged Excitons in CdSe/CdS Colloidal Nanoplatelets with Thick Shells

artículo científico publicado en 2017

Ferromagnetic (Ga,Mn)As nanowires grown by Mn-assisted molecular beam epitaxy

article published in 2013

Interface roughness and homogeneous linewidths in quantum wells and superlattices studied by resonant acoustic-phonon Raman scattering

artículo científico publicado en 1994

Magneto-optical study of quantum-well electronic structure using disorder-induced resonant acoustic-phonon Raman scattering

scientific article published on 01 May 1995

Nonreciprocal magneto-optical effects in quantum wells

artículo científico publicado en 2014

Observation of insulating nanoislands in ferromagnetic GaMnAs

artículo científico publicado en 2009

Optical Orientation ofMn2+Ions in GaAs in Weak Longitudinal Magnetic Fields

artículo científico publicado en 2011

Optical-phonon emission in GaAs/AlAs multiple-quantum-well structures determined by hot-electron luminescence

artículo científico publicado en 1995

Polarization of valence band holes in the (Ga,Mn)as diluted magnetic semiconductor.

artículo científico publicado en 2005

Polarized emission of CdSe nanocrystals in magnetic field: the role of phonon-assisted recombination of the dark exciton

artículo científico publicado en 2020

Raman scattering from folded phonon dispersion gaps

scientific article published on 01 November 1993

Resonant Raman scattering due to bound-carrier spin flip in GaAs/AlxGa1-xAs quantum wells