4H-SiC Epitaxial Layers Grown on On-Axis Si-Face Substrate

A temperature dependent measurement of the carrier velocity vs. electric field characteristic for as-grown and H-intercalated epitaxial graphene on SiC

article

Assessment of H-intercalated graphene for microwave FETs through material characterization and electron transport studies

article

Bright single photon sources in lateral silicon carbide light emitting diodes

scholarly article by Matthias Widmann et al published 4 June 2018 in Applied Physics Letters

Carrier Lifetime Controlling Defects Z1/2 and RB1 in Standard and Chlorinated Chemistry Grown 4H-SiC

Coherent electrical readout of defect spins in silicon carbide by photo-ionization at ambient conditions

artículo científico publicado en 2019

Comparison between 3.3kV 4H-SiC Schottky and bipolar diodes

Control of Epitaxial Graphene Thickness on 4H-SiC(0001) and Buffer Layer Removal through Hydrogen Intercalation

Defects and carrier compensation in semi-insulating4H−SiCsubstrates

scholarly article in Physical Review B, vol. 75 no. 15, April 2007

Demonstration of a Robust All-Silicon-Carbide Intracortical Neural Interface

artículo científico publicado en 2018

Divacancy in 4H-SiC

artículo científico publicado en 2006

Donor incorporation in SiC epilayers grown at high growth rate with chloride-based CVD

article published in 2009

Effective mass of electron in monolayer graphene: Electron-phonon interaction

Electrical Charge State Manipulation of Single Silicon Vacancies in a Silicon Carbide Quantum Optoelectronic Device

artículo científico publicado en 2019

Electrical and optical control of single spins integrated in scalable semiconductor devices

scientific article published on 01 December 2019

Fast Growth Rate Epitaxy on 4° Off-Cut 4-Inch Diameter 4H-SiC Wafers

Graphene self-switching diodes as zero-bias microwave detectors

article

Growth and Photoluminescence Study of Aluminium Doped SiC Epitaxial Layers

Growth and Properties of SiC On-Axis Homoepitaxial Layers

High Growth Rate with Reduced Surface Roughness during On-Axis Homoepitaxial Growth of 4H-SiC

High-Resolution Raman and Luminescence Spectroscopy of Isotope-Pure 28 Si 12 C, Natural and 13 C – Enriched 4H-SiC

High-Resolution Time-Resolved Carrier Lifetime and Photoluminescence Mapping of 4H-SiC Epilayers

High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide

scientific article published on 26 April 2019

Improved Epilayer Surface Morphology on 2˚ Off-Cut 4H-SiC Substrates

In-grown stacking-faults in 4H-SiC epilayers grown on 2° off-cut substrates

In-situ surface preparation of nominally on-axis 4H-SiC substrates

Influence of Growth Mechanism on Carrier Lifetime in On-Axis Homoepitaxial Layers of 4H-SiC

Influence of Growth Temperature on Carrier Lifetime in 4H-SiC Epilayers

Isolated Spin Qubits in SiC with a High-Fidelity Infrared Spin-to-Photon Interface

Isolated electron spins in silicon carbide with millisecond coherence times

artículo científico publicado en 2014

Layer-number determination in graphene on SiC by reflectance mapping

scholarly article in Carbon, vol. 77, October 2014

Observation of the generation of stacking faults and active degradation measurements on off-axis and on-axis 4H-SiC PiN diodes

On-Axis Homoepitaxial Growth of 4H-SiC PiN Structure for High Power Applications

On-axis homoepitaxial growth on Si-face 4H–SiC substrates

Oxidation Induced ON 1 , ON 2a/b Defects in 4H-SiC Characterized by DLTS

Publisher's Note: “Graphene self-switching diodes as zero-bias microwave detectors” [Appl. Phys. Lett. 106, 093116 (2015)]

article

Publisher’s Note: Divacancy in 4H-SiC [Phys. Rev. Lett.96, 055501 (2006)]

scientific article published in Physical Review Letters

Quasi-free-standing monolayer and bilayer graphene growth on homoepitaxial on-axis 4H-SiC(0 0 0 1) layers

article

Radial Variation of Measured Carrier Lifetimes in Epitaxial Layers Grown with Wafer Rotation

SiC Varactors for Dynamic Load Modulation of High Power Amplifiers

Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide

scientific article published on 20 May 2020

Stark tuning and electrical charge state control of single divacancies in silicon carbide

scholarly article by Charles F. de las Casas et al published 25 December 2017 in Applied Physics Letters

Surface Evolution of 4H-SiC(0001) during In Situ Surface Preparation and its Influence on Graphene Properties

Surface Preparation of 4° Off-Axis 4H-SiC Substrate for Epitaxial Growth

The influence of growth conditions on carrier lifetime in 4H–SiC epilayers

Thick Epilayer for Power Devices