Lista de obras - Örjan Danielsson - Dominio Público Uruguay

A model for carbon incorporation from trimethyl gallium in chemical vapor deposition of gallium nitride

article

Ab Initio Study of Growth Mechanism of 4H–SiC: Adsorption and Surface Reaction of C2H2, C2H4, CH4, and CH3

AlGaN/GaN high electron mobility transistors with intentionally doped GaN buffer using propane as carbon precursor

article

Aluminum doping of epitaxial silicon carbide

scholarly article by U Forsberg et al published June 2003 in Journal of Crystal Growth

Brominated Chemistry for Chemical Vapor Deposition of Electronic Grade SiC

Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

article

Carrier Lifetime Controlling Defects Z1/2 and RB1 in Standard and Chlorinated Chemistry Grown 4H-SiC

Epitaxial growth of 4H SiC in a vertical hot-wall CVD reactor: Comparison between up- and down-flow orientations

Finding the Optimum Chloride-Based Chemistry for Chemical Vapor Deposition of SiC

article published in 2014

Gas-Phase Modeling of Chlorine-Based Chemical Vapor Deposition of Silicon Carbide

scholarly article by Stefano Leone et al published 8 March 2012 in Crystal Growth & Design

Growth Mechanism of SiC Chemical Vapor Deposition: Adsorption and Surface Reactions of Active Si Species

Growth rate predictions of chemical vapor deposited silicon carbide epitaxial layers

scholarly article by Örjan Danielsson et al published August 2002 in Journal of Crystal Growth

Investigation of the temperature profile in a hot-wall SiC chemical vapor deposition reactor

article by Örjan Danielsson et al published February 2002 in Journal of Crystal Growth

Matching precursor kinetics to afford a more robust CVD chemistry: a case study of the C chemistry for silicon carbide using SiF4 as Si precursor

scholarly article by Pontus Stenberg et al published 2017 in Journal of Materials Chemistry C

Nitrogen doping of epitaxial silicon carbide

scholarly article by U Forsberg et al published March 2002 in Journal of Crystal Growth

On the use of methane as a carbon precursor in Chemical Vapor Deposition of silicon carbide

scholarly article by M. Yazdanfar et al published March 2014 in Journal of Crystal Growth

Precursors for carbon doping of GaN in chemical vapor deposition

article published in 2015

Predicted nitrogen doping concentrations in silicon carbide epitaxial layers grown by hot-wall chemical vapor deposition

scholarly article by Örjan Danielsson et al published April 2003 in Journal of Crystal Growth

Reducing stress in silicon carbide epitaxial layers

scholarly article by Örjan Danielsson et al published May 2003 in Journal of Crystal Growth

Revisiting the Thermochemical Database of Si-C-H System Related to SiC CVD Modeling

Shortcomings of CVD modeling of SiC today

Silicon Chemistry in Fluorinated Chemical Vapor Deposition of Silicon Carbide

scholarly article by Pontus Stenberg et al published 30 January 2017 in Journal of Physical Chemistry C

Lista de obras de Örjan Danielsson

A model for carbon incorporation from trimethyl gallium in chemical vapor deposition of gallium nitride

Ab Initio Study of Growth Mechanism of 4H–SiC: Adsorption and Surface Reaction of C2H2, C2H4, CH4, and CH3

AlGaN/GaN high electron mobility transistors with intentionally doped GaN buffer using propane as carbon precursor

Aluminum doping of epitaxial silicon carbide

Brominated Chemistry for Chemical Vapor Deposition of Electronic Grade SiC

Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

Carrier Lifetime Controlling Defects Z1/2 and RB1 in Standard and Chlorinated Chemistry Grown 4H-SiC

Epitaxial growth of 4H SiC in a vertical hot-wall CVD reactor: Comparison between up- and down-flow orientations

Finding the Optimum Chloride-Based Chemistry for Chemical Vapor Deposition of SiC

Gas-Phase Modeling of Chlorine-Based Chemical Vapor Deposition of Silicon Carbide

Growth Mechanism of SiC Chemical Vapor Deposition: Adsorption and Surface Reactions of Active Si Species

Growth rate predictions of chemical vapor deposited silicon carbide epitaxial layers

Investigation of the temperature profile in a hot-wall SiC chemical vapor deposition reactor

Matching precursor kinetics to afford a more robust CVD chemistry: a case study of the C chemistry for silicon carbide using SiF4 as Si precursor

Nitrogen doping of epitaxial silicon carbide

On the use of methane as a carbon precursor in Chemical Vapor Deposition of silicon carbide

Precursors for carbon doping of GaN in chemical vapor deposition

Predicted nitrogen doping concentrations in silicon carbide epitaxial layers grown by hot-wall chemical vapor deposition

Reducing stress in silicon carbide epitaxial layers

Revisiting the Thermochemical Database of Si-C-H System Related to SiC CVD Modeling

Shortcomings of CVD modeling of SiC today

Silicon Chemistry in Fluorinated Chemical Vapor Deposition of Silicon Carbide

Simulation of Gas-Phase Chemistry for Selected Carbon Precursors in Epitaxial Growth of SiC

Simulations of SiC CVD - Perspectives on the Need for Surface Reaction Model Improvements

Thermochemical Properties of Halides and Halohydrides of Silicon and Carbon

Using N2 as precursor gas in III-nitride CVD growth