Lista de obras - Oliver Supplie - Dominio Público Uruguay

Ab initio density functional theory study on the atomic and electronic structure of GaP/Si(001) heterointerfaces

scholarly article in Physical Review B, vol. 94 no. 15, October 2016

Analysis of the Si(111) surface prepared in chemical vapor ambient for subsequent III-V heteroepitaxy

article published in 2017

Anomalous double-layer step formation on Si(100) in hydrogen process ambient

article

Atomic scale analysis of the GaP/Si(100) heterointerface byin situreflection anisotropy spectroscopy andab initiodensity functional theory

article

Control Over Dimer Orientations on Vicinal Si(100) Surfaces in Hydrogen Ambient: Kinetics Versus Energetics

Control Over Dimer Orientations on Vicinal Si(100) Surfaces in Hydrogen Ambient: Kinetics Versus Energetics (Phys. Status Solidi B 4/2018)

Controlling the polarity of metalorganic vapor phase epitaxy-grown GaP on Si(111) for subsequent III-V nanowire growth

Domain-sensitive in situ observation of layer-by-layer removal at Si(100) in H2 ambient

Double-layer stepped Si(1 0 0) surfaces prepared in As-rich CVD ambience

Electronic structures of GaP(100) surface reconstructions probed with two-photon photoemission spectroscopy

scholarly article in Physical Review B, vol. 89 no. 16, April 2014

Epitaxial III-V films and surfaces for photoelectrocatalysis

artículo científico publicado en 2012

Formation of GaP/Si(100) Heterointerfaces in the Presence of Inherent Reactor Residuals

GaAsP/Si tandem solar cells: In situ study on GaP/Si:As virtual substrate preparation

GaAsP/Si tandem solar cells: Realistic prediction of efficiency gain by applying strain-balanced multiple quantum wells

Impact of Rotational Twin Boundaries and Lattice Mismatch on III-V Nanowire Growth

artículo científico publicado en 2017

In Situ Characterization of Interfaces Relevant for Efficient Photoinduced Reactions

In situ antiphase domain quantification applied on heteroepitaxial GaP growth on Si(100)

In situ control of As dimer orientation on Ge(100) surfaces

In situ control of Si(100) and Ge(100) surface preparation for the heteroepitaxy of III-V solar cell architectures

In situ controlled heteroepitaxy of single-domain GaP on As-modified Si(100)

article

In situ preparation of Si p-n junctions and subsequent surface preparation for III-V heteroepitaxy in MOCVD ambient

In situ study of Ge(100) surfaces with tertiarybutylphosphine supply in vapor phase epitaxy ambient

In situaccess to the dielectric anisotropy of buried III-V/Si(100) heterointerfaces

scholarly article in Physical Review B, vol. 86 no. 3, July 2012

Indirect in situ characterization of Si(100) substrates at the initial stage of III–V heteroepitaxy

MOVPE growth of GaP/GaPN core-shell nanowires: N incorporation, morphology and crystal structure

scientific article published on 04 December 2018

Materials for light-induced water splitting: In situ controlled surface preparation of GaPN epilayers grown lattice-matched on Si(100)

Optical constants and origin of the absorption edge of GaPN lattice-matched to Si

scholarly article in Physical Review B, vol. 98 no. 7, August 2018

Optical in situ monitoring of hydrogen desorption from Ge(100) surfaces

Suppression of Rotational Twin Formation in Virtual GaP/Si(111) Substrates for III–V Nanowire Growth

article by Christian Koppka et al published 19 October 2016 in Crystal Growth & Design

The interface of GaP(100) and H2O studied by photoemission and reflection anisotropy spectroscopy

article

Time-Resolved In Situ Spectroscopy During Formation of the GaP/Si(100) Heterointerface

artículo científico publicado en 2015

Water-induced modifications of GaP(100) and InP(100) surfaces studied by photoelectron spectroscopy and reflection anisotropy spectroscopy

article

Ge(100) surfaces prepared in vapor phase epitaxy process ambient

Artículo científico publicado el 29 de febrero de 2012

Lista de obras de Oliver Supplie

Ab initio density functional theory study on the atomic and electronic structure of GaP/Si(001) heterointerfaces

Analysis of the Si(111) surface prepared in chemical vapor ambient for subsequent III-V heteroepitaxy

Anomalous double-layer step formation on Si(100) in hydrogen process ambient

Atomic scale analysis of the GaP/Si(100) heterointerface byin situreflection anisotropy spectroscopy andab initiodensity functional theory

Control Over Dimer Orientations on Vicinal Si(100) Surfaces in Hydrogen Ambient: Kinetics Versus Energetics

Control Over Dimer Orientations on Vicinal Si(100) Surfaces in Hydrogen Ambient: Kinetics Versus Energetics (Phys. Status Solidi B 4/2018)

Controlling the polarity of metalorganic vapor phase epitaxy-grown GaP on Si(111) for subsequent III-V nanowire growth

Domain-sensitive in situ observation of layer-by-layer removal at Si(100) in H2 ambient

Double-layer stepped Si(1 0 0) surfaces prepared in As-rich CVD ambience

Electronic structures of GaP(100) surface reconstructions probed with two-photon photoemission spectroscopy

Epitaxial III-V films and surfaces for photoelectrocatalysis

Formation of GaP/Si(100) Heterointerfaces in the Presence of Inherent Reactor Residuals

GaAsP/Si tandem solar cells: In situ study on GaP/Si:As virtual substrate preparation

GaAsP/Si tandem solar cells: Realistic prediction of efficiency gain by applying strain-balanced multiple quantum wells

Impact of Rotational Twin Boundaries and Lattice Mismatch on III-V Nanowire Growth

In Situ Characterization of Interfaces Relevant for Efficient Photoinduced Reactions

In situ antiphase domain quantification applied on heteroepitaxial GaP growth on Si(100)

In situ control of As dimer orientation on Ge(100) surfaces

In situ control of Si(100) and Ge(100) surface preparation for the heteroepitaxy of III-V solar cell architectures

In situ controlled heteroepitaxy of single-domain GaP on As-modified Si(100)

In situ preparation of Si p-n junctions and subsequent surface preparation for III-V heteroepitaxy in MOCVD ambient

In situ study of Ge(100) surfaces with tertiarybutylphosphine supply in vapor phase epitaxy ambient

In situaccess to the dielectric anisotropy of buried III-V/Si(100) heterointerfaces

Indirect in situ characterization of Si(100) substrates at the initial stage of III–V heteroepitaxy

MOVPE growth of GaP/GaPN core-shell nanowires: N incorporation, morphology and crystal structure

Materials for light-induced water splitting: In situ controlled surface preparation of GaPN epilayers grown lattice-matched on Si(100)

Optical constants and origin of the absorption edge of GaPN lattice-matched to Si

Optical in situ monitoring of hydrogen desorption from Ge(100) surfaces

Suppression of Rotational Twin Formation in Virtual GaP/Si(111) Substrates for III–V Nanowire Growth

The interface of GaP(100) and H2O studied by photoemission and reflection anisotropy spectroscopy

Time-Resolved In Situ Spectroscopy During Formation of the GaP/Si(100) Heterointerface

Water-induced modifications of GaP(100) and InP(100) surfaces studied by photoelectron spectroscopy and reflection anisotropy spectroscopy

Ge(100) surfaces prepared in vapor phase epitaxy process ambient

Double-layer stepped Si(1 0 0) surfaces prepared in As-rich CVD ambience