Lista de obras - Tongtong Zhu - Dominio Público Uruguay

An investigation into defect reduction techniques for growth of non-polar GaN on sapphire

article

Characterization of unintentional doping in nonpolar GaN

Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells

article published in 2016

Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells

article published in 2013

Defect Reduction in Semi-Polar (112̄2) Gallium Nitride Grown Using Epitaxial Lateral Overgrowth

Direct generation of linearly polarized single photons with a deterministic axis in quantum dots

Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer

artículo científico publicado en 2010

Dislocations as channels for the fabrication of sub-surface porous GaN by electrochemical etching

Distinctive signature of indium gallium nitride quantum dot lasing in microdisk cavities

artículo científico publicado en 2014

Dry etch release processes for micromachining applications

artículo científico publicado en 2007

Effect of Threading Dislocations on the Quality Factor of InGaN/GaN Microdisk Cavities

artículo científico publicado en 2014

Effects of microstructure and growth conditions on quantum emitters in gallium nitride

Encapsulation of methylammonium lead bromide perovskite in nanoporous GaN

artículo científico publicado en 2019

Evaluation of growth methods for the heteroepitaxy of non-polar ( 11 2 ¯ 0 ) GAN on sapphire by MOVPE

Growth and optical characterisation of multilayers of InGaN quantum dots

article

Growth of non-polar (11-20) InGaN quantum dots by metal organic vapour phase epitaxy using a two temperature method

article published in 2014

Growth of non-polar InGaN quantum dots with an underlying AlN/GaN distributed Bragg reflector by metal-organic vapour phase epitaxy

High temperature stability in non-polar (11$ \bar 2 $0) InGaN quantum dots: Exciton and biexciton dynamics

article

High-temperature performance of non-polar (11-20) InGaN quantum dots grown by a quasi-two-temperature method

article

Highly polarized electrically driven single-photon emission from a non-polar InGaN quantum dot

Improvement of single photon emission from InGaN QDs embedded in porous micropillars

Indium clustering in a-plane InGaN quantum wells as evidenced by atom probe tomography

scholarly article by Fengzai Tang et al published 16 February 2015 in Applied Physics Letters

Light-output enhancement of InGaN light emitting diodes regrown on nanoporous distributed Bragg reflector substrates

article by John C. Jarman et al published 14 May 2019 in Japanese Journal of Applied Physics

Local carrier recombination and associated dynamics in m-plane InGaN/GaN quantum wells probed by picosecond cathodoluminescence

Low defect large area semi-polar (11[Formula: see text]2) GaN grown on patterned (113) silicon

artículo científico publicado en 2014

Low threshold, room-temperature microdisk lasers in the blue spectral range

article published in 2013

Microstructural dependency of optical properties of m-plane InGaN multiple quantum wells grown on 2° misoriented bulk GaN substrates

Microstructural origins of localization in InGaN quantum wells

Microstructural, optical, and electrical characterization of semipolar (112¯2) gallium nitride grown by epitaxial lateral overgrowth

scholarly article by Tongtong Zhu et al published 15 October 2010 in Journal of Applied Physics

Nanoscopic insights into the effect of silicon on core-shell InGaN/GaN nanorods: Luminescence, composition, and structure

article

Nitride quantum light sources

article by Tongtong Zhu & Rachel Angharad Oliver published 1 February 2016 in Europhysics Letters

Non-polar (11$ \bar 2 $0) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapour phase epitaxy

article

Non-polar (11-20) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapor phase epitaxy

article

Non-polar InGaN quantum dot emission with crystal-axis oriented linear polarization

Observations of Rabi oscillations in a non-polar InGaN quantum dot

article

On-Chip Thermal Insulation Using Porous GaN

artículo científico publicado en 2018

Optical and structural characterization of N-face GaN epilayers grown on Ge (111) by plasma assisted molecular beam epitaxy

artículo científico publicado en 2013

Optical studies of non-polar m-plane (11¯00) InGaN/GaN multi-quantum wells grown on freestanding bulk GaN

Origins of Spectral Diffusion in the Micro-Photoluminescence of Single InGaN Quantum Dots

article

Origins of hillock defects on GaN templates grown on Si(111)

artículo científico publicado en 2016

Polarisation-controlled single photon emission at high temperatures from InGaN quantum dots.

artículo científico publicado en 2017

Porous AlGaN-Based Ultraviolet Distributed Bragg Reflectors

Properties of trench defects in InGaN/GaN quantum well structures

Pure single-photon emission from an InGaN/GaN quantum dot

Quantification of unintentional doping in non-polar GaN using scanning capacitance microscopy

Radiative recombination mechanisms in polar and non-polar InGaN/GaN quantum well LED structures

SCM and SIMS investigations of unintentional doping in III-nitrides

article published in 2015

Self-assembled Multilayers of Silica Nanospheres for Defect Reduction in Non- and Semipolar Gallium Nitride Epitaxial Layers

artículo científico publicado en 2015

Spectral diffusion time scales in InGaN/GaN quantum dots

Structural and optical properties of (112̅2) InGaN quantum wells compared to (0001) and (112̅0)

Structural characterization of porous GaN distributed Bragg reflectors using x-ray diffraction

Structure and composition of non-polar (11-20) InGaN nanorings grown by modified droplet epitaxy

article

Structure and magnetic properties of an epitaxial Fe(110)/MgO(111)/GaN(0001) heterostructure

Surface morphology of homoepitaxial c-plane GaN: Hillocks and ridges

Temperature-dependent fine structure splitting in InGaN quantum dots

Terahertz electromodulation spectroscopy of electron transport in GaN

artículo científico publicado en 2015

The effects of annealing on non-polar (112¯0) a-plane GaN films

The impact of ScOxNyinterlayers on unintentional doping and threading dislocations in GaN

The microstructure of non-polar a-plane (11 2¯0) InGaN quantum wells

The relationship between the three-dimensional structure of porous GaN distributed Bragg reflectors and their birefringence

Theoretical and experimental analysis of radiative recombination lifetimes in nonpolar InGaN/GaN quantum dots

Toward defect-free semi-polar GaN templates on pre-structured sapphire

Ultra-low threshold gallium nitride photonic crystal nanobeam laser

scholarly article by Nan Niu et al published 8 June 2015 in Applied Physics Letters

Ultrafast, Polarized, Single-Photon Emission from m-Plane InGaN Quantum Dots on GaN Nanowires

artículo científico publicado en 2016

Unintentional doping in GaN ⬇️

artículo científico publicado el 8 de junio de 2012

Lista de obras de Tongtong Zhu

An investigation into defect reduction techniques for growth of non-polar GaN on sapphire

Characterization of unintentional doping in nonpolar GaN

Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells

Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells

Defect Reduction in Semi-Polar (112̄2) Gallium Nitride Grown Using Epitaxial Lateral Overgrowth

Direct generation of linearly polarized single photons with a deterministic axis in quantum dots

Dislocation reduction in GaN grown on Si(111) using a strain-driven 3D GaN interlayer

Dislocations as channels for the fabrication of sub-surface porous GaN by electrochemical etching

Distinctive signature of indium gallium nitride quantum dot lasing in microdisk cavities

Dry etch release processes for micromachining applications

Effect of Threading Dislocations on the Quality Factor of InGaN/GaN Microdisk Cavities

Effects of microstructure and growth conditions on quantum emitters in gallium nitride

Encapsulation of methylammonium lead bromide perovskite in nanoporous GaN

Evaluation of growth methods for the heteroepitaxy of non-polar ( 11 2 ¯ 0 ) GAN on sapphire by MOVPE

Growth and optical characterisation of multilayers of InGaN quantum dots

Growth of non-polar (11-20) InGaN quantum dots by metal organic vapour phase epitaxy using a two temperature method

Growth of non-polar InGaN quantum dots with an underlying AlN/GaN distributed Bragg reflector by metal-organic vapour phase epitaxy

High temperature stability in non-polar (11$ \bar 2 $0) InGaN quantum dots: Exciton and biexciton dynamics

High-temperature performance of non-polar (11-20) InGaN quantum dots grown by a quasi-two-temperature method

Highly polarized electrically driven single-photon emission from a non-polar InGaN quantum dot

Improvement of single photon emission from InGaN QDs embedded in porous micropillars

Indium clustering in a-plane InGaN quantum wells as evidenced by atom probe tomography

Light-output enhancement of InGaN light emitting diodes regrown on nanoporous distributed Bragg reflector substrates

Local carrier recombination and associated dynamics in m-plane InGaN/GaN quantum wells probed by picosecond cathodoluminescence

Low defect large area semi-polar (11[Formula: see text]2) GaN grown on patterned (113) silicon

Low threshold, room-temperature microdisk lasers in the blue spectral range

Microstructural dependency of optical properties of m-plane InGaN multiple quantum wells grown on 2° misoriented bulk GaN substrates

Microstructural origins of localization in InGaN quantum wells

Microstructural, optical, and electrical characterization of semipolar (112¯2) gallium nitride grown by epitaxial lateral overgrowth

Nanoscopic insights into the effect of silicon on core-shell InGaN/GaN nanorods: Luminescence, composition, and structure

Nitride quantum light sources

Non-polar (11$ \bar 2 $0) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapour phase epitaxy

Non-polar (11-20) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapor phase epitaxy

Non-polar InGaN quantum dot emission with crystal-axis oriented linear polarization

Observations of Rabi oscillations in a non-polar InGaN quantum dot

On-Chip Thermal Insulation Using Porous GaN

Optical and structural characterization of N-face GaN epilayers grown on Ge (111) by plasma assisted molecular beam epitaxy

Optical studies of non-polar m-plane (11¯00) InGaN/GaN multi-quantum wells grown on freestanding bulk GaN

Origins of Spectral Diffusion in the Micro-Photoluminescence of Single InGaN Quantum Dots

Origins of hillock defects on GaN templates grown on Si(111)

Polarisation-controlled single photon emission at high temperatures from InGaN quantum dots.

Porous AlGaN-Based Ultraviolet Distributed Bragg Reflectors

Properties of trench defects in InGaN/GaN quantum well structures

Pure single-photon emission from an InGaN/GaN quantum dot

Quantification of unintentional doping in non-polar GaN using scanning capacitance microscopy

Radiative recombination mechanisms in polar and non-polar InGaN/GaN quantum well LED structures

SCM and SIMS investigations of unintentional doping in III-nitrides

Self-assembled Multilayers of Silica Nanospheres for Defect Reduction in Non- and Semipolar Gallium Nitride Epitaxial Layers

Spectral diffusion time scales in InGaN/GaN quantum dots

Structural and optical properties of (112̅2) InGaN quantum wells compared to (0001) and (112̅0)

Structural characterization of porous GaN distributed Bragg reflectors using x-ray diffraction

Structure and composition of non-polar (11-20) InGaN nanorings grown by modified droplet epitaxy

Structure and magnetic properties of an epitaxial Fe(110)/MgO(111)/GaN(0001) heterostructure

Surface morphology of homoepitaxial c-plane GaN: Hillocks and ridges

Temperature-dependent fine structure splitting in InGaN quantum dots

Terahertz electromodulation spectroscopy of electron transport in GaN

The effects of annealing on non-polar (112¯0) a-plane GaN films

The impact of ScOxNyinterlayers on unintentional doping and threading dislocations in GaN

The microstructure of non-polar a-plane (11 2¯0) InGaN quantum wells

The relationship between the three-dimensional structure of porous GaN distributed Bragg reflectors and their birefringence

Theoretical and experimental analysis of radiative recombination lifetimes in nonpolar InGaN/GaN quantum dots

Toward defect-free semi-polar GaN templates on pre-structured sapphire

Ultra-low threshold gallium nitride photonic crystal nanobeam laser

Ultrafast, Polarized, Single-Photon Emission from m-Plane InGaN Quantum Dots on GaN Nanowires

Unintentional doping in GaN ⬇️