Lista de obras - Robert M Wallace - Dominio Público Uruguay

A density-functional theory study of tip electronic structures in scanning tunneling microscopy ⬇️

artículo científico publicado el 15 de febrero de 2013

A kinetic Monte Carlo simulation method of van der Waals epitaxy for atomistic nucleation-growth processes of transition metal dichalcogenides

artículo científico publicado en 2017

Atomic layer deposition of a high-k dielectric on MoS2 using trimethylaluminum and ozone

artículo científico publicado en 2014

Atomic layer deposition of dielectrics on graphene using reversibly physisorbed ozone

artículo científico publicado en 2012

Atomically thin heterostructures based on single-layer tungsten diselenide and graphene

artículo científico publicado en 2014

Carbon-based supercapacitors produced by activation of graphene

artículo científico publicado en 2011

Computational Study of MoS2/HfO2 Defective Interfaces for Nanometer-Scale Electronics

scientific article published on 19 June 2017

Contact Engineering High-Performance n-Type MoTe2 Transistors

scientific article published on 13 August 2019

Copper-metal deposition on self assembled monolayer for making top contacts in molecular electronic devices

artículo científico publicado en 2009

Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure

artículo científico publicado en 2016

Defect-dominated doping and contact resistance in MoS2

artículo científico publicado en 2014

Defects and Surface Structural Stability of MoTe2 Under Vacuum Annealing

artículo científico publicado en 2017

Dislocation driven spiral and non-spiral growth in layered chalcogenides

artículo científico publicado en 2018

Enhancing Interconnect Reliability and Performance by Converting Tantalum to 2D Layered Tantalum Sulfide at Low Temperature

scientific article published on 11 June 2019

Fermi Level Manipulation through Native Doping in the Topological Insulator BiSe

scientific article published on 08 June 2018

GaN as an interfacial passivation layer: tuning band offset and removing fermi level pinning for III-V MOS devices.

artículo científico publicado en 2015

HfO(2) on MoS(2) by atomic layer deposition: adsorption mechanisms and thickness scalability.

artículo científico publicado en 2013

HfSe2 thin films: 2D transition metal dichalcogenides grown by molecular beam epitaxy

artículo científico publicado en 2014

High-Mobility Helical Tellurium Field-Effect Transistors Enabled by Transfer-Free, Low-Temperature Direct Growth

scientific article published on 18 July 2018

High-κ Dielectric on ReS₂: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al₂O₃

scientific article published on 30 March 2019

Highly scalable, atomically thin WSe2 grown via metal-organic chemical vapor deposition

article

Hole contacts on transition metal dichalcogenides: interface chemistry and band alignments

artículo científico publicado en 2014

Hole selective MoOx contact for silicon solar cells.

artículo científico publicado en 2014

Impact of Etch Processes on the Chemistry and Surface States of the Topological Insulator Bi2Se3

scientific article published on 26 August 2019

Impact of intrinsic atomic defects on the electronic structure of MoS2 monolayers.

artículo científico publicado en 2014

Impurity and silicate formation dependence on O3 pulse time and the growth temperature in atomic-layer-deposited La2O3 thin films.

artículo científico publicado en 2017

In situ TEM characterization of shear-stress-induced interlayer sliding in the cross section view of molybdenum disulfide.

artículo científico publicado en 2014

Investigation of the Physical Properties of Plasma Enhanced Atomic Layer Deposited Silicon Nitride as Etch Stopper

artículo científico publicado en 2018

Metal contacts on physical vapor deposited monolayer MoS2.

artículo científico publicado en 2013

Metal-graphene-metal sandwich contacts for enhanced interface bonding and work function control

artículo científico publicado en 2012

MoS2-Titanium Contact Interface Reactions

artículo científico publicado en 2016

MoS₂ P-type transistors and diodes enabled by high work function MoOx contacts

artículo científico publicado en 2014

New Mo6 Te6 Sub-Nanometer-Diameter Nanowire Phase from 2H-MoTe2.

artículo científico publicado en 2017

Probing Interface Defects in Top-Gated MoS2 Transistors with Impedance Spectroscopy.

artículo científico publicado en 2017

Realistic metal-graphene contact structures

artículo científico publicado en 2013

Realizing Large-Scale, Electronic-Grade Two-Dimensional Semiconductors.

artículo científico publicado en 2018

Reducing extrinsic performance-limiting factors in graphene grown by chemical vapor deposition

artículo científico publicado en 2012

Scalable BEOL compatible 2D tungsten diselenide

Schottky Barrier Height of Pd/MoS2 Contact by Large Area Photoemission Spectroscopy

artículo científico publicado en 2017

Seeding atomic layer deposition of alumina on graphene with yttria.

artículo científico publicado en 2015

Silicon interfacial passivation layer chemistry for high-k/InP interfaces

artículo científico publicado en 2014

Structure of ultra-thin diamond-like carbon films grown with filtered cathodic arc on Si(001).

artículo científico publicado en 2010

Sub-10 nm Tunable Hybrid Dielectric Engineering on MoS2 for Two-Dimensional Material-Based Devices.

artículo científico publicado en 2017

Surface and interfacial study of atomic layer deposited Al2O3 on MoTe2 and WTe2

scientific article published on 16 October 2019

The unusual mechanism of partial Fermi level pinning at metal-MoS2 interfaces

artículo científico publicado en 2014

Toward the Controlled Synthesis of Hexagonal Boron Nitride Films ⬇️

artículo científico publicado el 21 de junio de 2012

Tuning electronic transport in epitaxial graphene-based van der Waals heterostructures

artículo científico publicado en 2016

Tuning the Electronic and Photonic Properties of Monolayer MoS 2 via In Situ Rhenium Substitutional Doping

Two-dimensional gallium nitride realized via graphene encapsulation

artículo científico publicado en 2016

Uniform Wafer-Scale Chemical Vapor Deposition of Graphene on Evaporated Cu (111) Film with Quality Comparable to Exfoliated Monolayer

Unusual oxidation-induced core-level shifts at the HfO/InP interface

artículo científico publicado en 2019

Lista de obras de Robert M Wallace

A density-functional theory study of tip electronic structures in scanning tunneling microscopy ⬇️

A kinetic Monte Carlo simulation method of van der Waals epitaxy for atomistic nucleation-growth processes of transition metal dichalcogenides

Atomic layer deposition of a high-k dielectric on MoS2 using trimethylaluminum and ozone

Atomic layer deposition of dielectrics on graphene using reversibly physisorbed ozone

Atomically thin heterostructures based on single-layer tungsten diselenide and graphene

Carbon-based supercapacitors produced by activation of graphene

Computational Study of MoS2/HfO2 Defective Interfaces for Nanometer-Scale Electronics

Contact Engineering High-Performance n-Type MoTe2 Transistors

Copper-metal deposition on self assembled monolayer for making top contacts in molecular electronic devices

Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure

Defect-dominated doping and contact resistance in MoS2

Defects and Surface Structural Stability of MoTe2 Under Vacuum Annealing

Dislocation driven spiral and non-spiral growth in layered chalcogenides

Enhancing Interconnect Reliability and Performance by Converting Tantalum to 2D Layered Tantalum Sulfide at Low Temperature

Fermi Level Manipulation through Native Doping in the Topological Insulator BiSe

GaN as an interfacial passivation layer: tuning band offset and removing fermi level pinning for III-V MOS devices.

HfO(2) on MoS(2) by atomic layer deposition: adsorption mechanisms and thickness scalability.

HfSe2 thin films: 2D transition metal dichalcogenides grown by molecular beam epitaxy

High-Mobility Helical Tellurium Field-Effect Transistors Enabled by Transfer-Free, Low-Temperature Direct Growth

High-κ Dielectric on ReS₂: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al₂O₃

Highly scalable, atomically thin WSe2 grown via metal-organic chemical vapor deposition

Hole contacts on transition metal dichalcogenides: interface chemistry and band alignments

Hole selective MoOx contact for silicon solar cells.

Impact of Etch Processes on the Chemistry and Surface States of the Topological Insulator Bi2Se3

Impact of intrinsic atomic defects on the electronic structure of MoS2 monolayers.

Impurity and silicate formation dependence on O3 pulse time and the growth temperature in atomic-layer-deposited La2O3 thin films.

In situ TEM characterization of shear-stress-induced interlayer sliding in the cross section view of molybdenum disulfide.

Investigation of the Physical Properties of Plasma Enhanced Atomic Layer Deposited Silicon Nitride as Etch Stopper

Metal contacts on physical vapor deposited monolayer MoS2.

Metal-graphene-metal sandwich contacts for enhanced interface bonding and work function control

MoS2-Titanium Contact Interface Reactions

MoS₂ P-type transistors and diodes enabled by high work function MoOx contacts

New Mo6 Te6 Sub-Nanometer-Diameter Nanowire Phase from 2H-MoTe2.

Probing Interface Defects in Top-Gated MoS2 Transistors with Impedance Spectroscopy.

Realistic metal-graphene contact structures

Realizing Large-Scale, Electronic-Grade Two-Dimensional Semiconductors.

Reducing extrinsic performance-limiting factors in graphene grown by chemical vapor deposition

Scalable BEOL compatible 2D tungsten diselenide

Schottky Barrier Height of Pd/MoS2 Contact by Large Area Photoemission Spectroscopy

Seeding atomic layer deposition of alumina on graphene with yttria.

Silicon interfacial passivation layer chemistry for high-k/InP interfaces

Structure of ultra-thin diamond-like carbon films grown with filtered cathodic arc on Si(001).

Sub-10 nm Tunable Hybrid Dielectric Engineering on MoS2 for Two-Dimensional Material-Based Devices.

Surface and interfacial study of atomic layer deposited Al2O3 on MoTe2 and WTe2

The unusual mechanism of partial Fermi level pinning at metal-MoS2 interfaces

Toward the Controlled Synthesis of Hexagonal Boron Nitride Films ⬇️

Tuning electronic transport in epitaxial graphene-based van der Waals heterostructures

Tuning the Electronic and Photonic Properties of Monolayer MoS 2 via In Situ Rhenium Substitutional Doping

Two-dimensional gallium nitride realized via graphene encapsulation

Uniform Wafer-Scale Chemical Vapor Deposition of Graphene on Evaporated Cu (111) Film with Quality Comparable to Exfoliated Monolayer

Unusual oxidation-induced core-level shifts at the HfO/InP interface