Lista de obras - Anderson Janotti - Dominio Público Uruguay

(InxGa1−x)2O3alloys for transparent electronics

scholarly article in Physical Review B, vol. 92 no. 8, August 2015

A first-principles study of the effect of Ta on the superlattice intrinsic stacking fault energy of L12-Co3(Al,W)

A pathway to p-type wide-band-gap semiconductors

A simple electron counting model for half-Heusler surfaces.

artículo científico publicado en 2018

Absolute deformation potentials and band alignment of wurtzite ZnO, MgO, and CdO

scholarly article in Physical Review B, vol. 75 no. 12, March 2007

Absolute surface energies of polar and nonpolar planes of GaN

scholarly article in Physical Review B, vol. 89 no. 8, February 2014

Acceptor doping in the proton conductor SrZrO3.

artículo científico publicado en 2017

Advances in electronic structure methods for defects and impurities in solids

Alloying Effects in the γ′ Phase of Co-Based Superalloys

Alternative sources of p-type conduction in acceptor-doped ZnO

Ambipolar doping in SnO

Atomic and electronic structure of hydrogen-related centers in hydrogen storage materials

BaSnO3 as a channel material in perovskite oxide heterostructures

article published in 2016

Band alignment and p -type doping of ZnSnN2

scholarly article in Physical Review B, vol. 95 no. 20, May 2017

Band alignment at band-insulator/Mott-insulator interfaces

Band alignments and polarization properties of BN polymorphs

Band offsets in complex-oxide thin films and heterostructures of SrTiO3/LaNiO3 and SrTiO3/GdTiO3 by soft and hard X-ray photoelectron spectroscopy

Brittle fracture toughnesses of GaN and AlN from first-principles surface-energy calculations

Carbon as a Shallow Donor in Transparent Conducting Oxides

article by J. L. Lyons et al published 10 December 2014 in Physical Review Applied

Carbon impurities and the yellow luminescence in GaN

article by J. L. Lyons et al published 11 October 2010 in Applied Physics Letters

Carbon-induced trapping levels in oxide dielectrics

Carbon-nitrogen molecules in GaAs and GaP

scholarly article in Physical Review B, vol. 77 no. 19, May 2008

Carrier density control of magnetism and Berry phases in doped EuTiO3

Carrier-Density-Induced Ferromagnetism in EuTiO_{3} Bulk and Heterostructures

scientific article published on 01 September 2019

Competition between ferromagnetism and antiferromagnetism in FePt

article

Computational design of a material for high-efficiency spin-polarized electron source

Concerted-exchange mechanism for antistructure pair defects in GaAs

Conductivity and transparency of TiO2from first principles

Controlling the Electronic Structures of Perovskite Oxynitrides and their Solid Solutions for Photocatalysis

artículo científico publicado en 2016

Controlling the conductivity of InN

Controlling the density of the two-dimensional electron gas at the SrTiO3/LaAlO3interface

scholarly article in Physical Review B, vol. 86 no. 24, December 2012

Correct Implementation of Polarization Constants in Wurtzite Materials and Impact on III-Nitrides ⬇️

Dangling bonds and vacancies in germanium

scholarly article by J. R. Weber et al published 14 January 2013 in Physical Review B

Dangling-bond defects and hydrogen passivation in germanium

scholarly article by J. R. Weber et al published October 2007 in Applied Physics Letters

Decomposition mechanism and the effects of metal additives on the kinetics of lithium alanate ⬇️

artículo científico publicado el 25 de enero de 2012

Deep donor state of the copper acceptor as a source of green luminescence in ZnO

Defect Formation Energies without the Band-Gap Problem: Combining Density-Functional Theory and theGWApproach for the Silicon Self-Interstitial

artículo científico publicado en 2009

Defect complexes in GaAs: First-principles calculations

scholarly article in Physical Review B, vol. 56 no. 20, November 1997

Defects as qubits in3C−and4H−SiC

scholarly article in Physical Review B, vol. 92 no. 4, July 2015

Defects at Ge/oxide and III–V/oxide interfaces

Defects in AlN as candidates for solid-state qubits

scholarly article in Physical Review B, vol. 93 no. 16, April 2016

Defects in SiC for quantum computing

Dehydrogenation of AlH3 via the Vacancy Clustering Mechanism

Depth-Resolved Composition and Electronic Structure of Buried Layers and Interfaces in a LaNiO 3 /SrTiO 3 Superlattice from Soft- and Hard- X-ray Standing-Wave Angle-Resolved Photoemission

article

Determination of the Mott-Hubbard gap inGdTiO3

scholarly article in Physical Review B, vol. 92 no. 8, August 2015

Direct View at Excess Electrons inTiO2Rutile and Anatase ⬇️

artículo científico publicado en 2014

Disentangling the role of small polarons and oxygen vacancies in CeO2

scholarly article in Physical Review B, vol. 95 no. 24, June 2017

Donor defects and small polarons on the TiO2(110) surface

Donor–donor binding in semiconductors: Engineering shallow donor levels for ZnTe

article by Anderson Janotti et al published 27 October 2003 in Applied Physics Letters

Dual behavior of excess electrons in rutile TiO2

Effect of transition-metal additives on hydrogen desorption kinetics of MgH2

Effects of Hydrogen on the Electronic Properties of Dilute GaAsN Alloys

artículo científico publicado en 2002

Effects of La 5d and 4f states on the electronic and optical properties of LaAlO3

scholarly article in Physical Review B, vol. 94 no. 20, November 2016

Effects of N on the electronic structures of H defects in III–V semiconductors

article published in 2004

Effects of biaxial stress and layer thickness on octahedral tilts in LaNiO3

Effects of carbon on the electrical and optical properties of InN, GaN, and AlN

scholarly article in Physical Review B, vol. 89 no. 3, January 2014

Effects of cationdstates on the structural and electronic properties of III-nitride and II-oxide wide-band-gap semiconductors

scholarly article in Physical Review B, vol. 74 no. 4, July 2006

Effects of doping on the lattice parameter of SrTiO3

article published in 2012

Effects of hole localization on limiting p-type conductivity in oxide and nitride semiconductors

article by J. L. Lyons et al published 7 January 2014 in Journal of Applied Physics

Effects of strain on the band structure of group-III nitrides

scholarly article in Physical Review B, vol. 90 no. 12, September 2014

Effects of strain on the electron effective mass in GaN and AlN

Effects of surface reconstructions on oxygen adsorption at AlN polar surfaces

Electrical activity of hydrogen impurities in GaSb: First-principles calculations

scholarly article in Physical Review B, vol. 78 no. 3, July 2008

Electrically active Er doping in InAs, In0.53Ga0.47As, and GaAs

Electron and chemical reservoir corrections for point-defect formation energies

scholarly article in Physical Review B, vol. 93 no. 16, April 2016

Electronic Structure Characterization of Hydrogen Terminated n-type Silicon Passivated by Benzoquinone-Methanol Solutions

Electronic and magnetic properties of MnN versus MnAs

Electronic and structural properties of vacancy and self-interstitial defects in germanium

scholarly article by Anderson Janotti et al published December 1999 in Physica B

Electronic structure of transition-metal impurities inp-type ZnO

scholarly article in Physical Review B, vol. 73 no. 4, January 2006

Electrostatic carrier doping of GdTiO3/SrTiO3 interfaces

Energetic, spatial, and momentum character of the electronic structure at a buried interface: The two-dimensional electron gas between two metal oxides

scholarly article in Physical Review B, vol. 93 no. 24, June 2016

Energetics and optical properties of nitrogen impurities in SrTiO3 from hybrid density-functional calculations

scholarly article in Physical Review B, vol. 95 no. 20, May 2017

Epitaxially stabilized AgGaSe2 for high-efficiency spin-polarized electron source

Erratum: “Oxygen vacancies and donor impurities in β-Ga2O3” [Appl. Phys. Lett. 97, 142106 (2010)]

scholarly article published in Applied Physics Letters

First-Principles Calculations of Point Defects for Quantum Technologies

First-Principles Optical Spectra forFCenters in MgO

artículo científico publicado en 2012

First-principles analysis of electron transport in BaSnO3

scholarly article in Physical Review B, vol. 95 no. 20, May 2017

First-principles calculations for point defects in solids

article by Christoph Freysoldt et al published 28 March 2014 in Reviews of Modern Physics

First-principles calculations of optical transitions at native defects and impurities in ZnO

First-principles characterization of native-defect-related optical transitions in ZnO

First-principles investigations of F and Cl impurities in NaAlH4

First-principles study of surface charging inLaAlO3/SrTiO3heterostructures

scholarly article in Physical Review B, vol. 92 no. 8, August 2015

First-principles study of the formation and migration of native defects inNaAlH4

scholarly article in Physical Review B, vol. 80 no. 22, December 2009

First-principles study of the mobility ofSrTiO3 ⬇️

article

First-principles study of the stability of BN and C

scholarly article in Physical Review B, vol. 64 no. 17, October 2001

First-principles study of vacancy-assisted impurity diffusion in ZnO

First-principles theory of acceptors in nitride semiconductors

Formation and migration of charged native point defects inMgH2: First-principles calculations

scholarly article in Physical Review B, vol. 80 no. 6, August 2009

Fundamentals of zinc oxide as a semiconductor

Group-V impurities inSnO2from first-principles calculations

article by J. B. Varley et al published 30 June 2010 in Physical Review B

Growth, electrical, structural, and magnetic properties of half-Heusler CoTi1−xFexSb

Hybrid functional calculations of native point defects in InN

article published in 2011

Hybrid functional calculations of point defects and hydrogen inSrZrO3

scholarly article in Physical Review B, vol. 89 no. 18, May 2014

Hybrid functional calculations ofDXcenters in AlN and GaN

scholarly article in Physical Review B, vol. 89 no. 8, February 2014

Hybrid functional studies of the oxygen vacancy inTiO2

scholarly article in Physical Review B, vol. 81 no. 8, February 2010

Hybrid-Functional Calculations of the Copper Impurity in Silicon

Hydrogen Vibration Modes in GaP:N: The Pivotal Role of Nitrogen in Stabilizing theH2*Complex

artículo científico publicado en 2002

Hydrogen bonds in Al2O3 as dissipative two-level systems in superconducting qubits

artículo científico publicado en 2014

Hydrogen donors inSnO2studied by infrared spectroscopy and first-principles calculations

scholarly article in Physical Review B, vol. 82 no. 19, November 2010

Hydrogen doping in indium oxide: An ab initio study

scholarly article by Sukit Limpijumnong et al published 9 November 2009 in Physical Review B

Hydrogen in oxides and nitrides: unexpected physics and impact on devices

Hydrogen interactions with acceptor impurities inSnO2: First-principles calculations

article by J. B. Varley et al published 22 June 2009 in Physical Review B

Hydrogen multicentre bonds

artículo científico publicado en 2006

Hydrogen passivation of impurities in Al(2)O(3).

artículo científico publicado en 2014

Hydrogen-Nitrogen Tailors Semiconductor Optoelectronics: The Case of Dilute Nitride III-V Alloys

Hydrogenated cation vacancies in semiconducting oxides.

artículo científico publicado en 2011

Hydrogenated vacancies and hidden hydrogen in SrTiO3

scholarly article in Physical Review B, vol. 89 no. 7, February 2014

Identification of Microscopic Hole-Trapping Mechanisms in Nitride Semiconductors

Impact of Group-II Acceptors on the Electrical and Optical Properties of GaN

Impact of carbon and nitrogen impurities in high-κ dielectrics on metal-oxide-semiconductor devices

Impact of electric-field dependent dielectric constants on two-dimensional electron gases in complex oxides

Impact of native defects in high-k dielectric oxides on GaN/oxide metal-oxide-semiconductor devices

Impact of nitrogen and carbon on defect equilibrium in ZrO 2

Impact of point defects on electrochromism in WO3

Initial stages of Ge growth on Si(100): ad-atoms, ad-dimers, and ad-trimers

article published in 1999

Insulating state of ultrathin epitaxial LaNiO3thin films detected by hard x-ray photoemission

scholarly article in Physical Review B, vol. 84 no. 7, August 2011

Interactions between hydrogen impurities and vacancies in Mg and Al: A comparative analysis based on density functional theory

article

Interactions between nitrogen, hydrogen, and gallium vacancies inGaAs1−xNxalloys

scholarly article by Anderson Janotti et al published 30 April 2003 in Physical Review B

Interband and polaronic excitations inYTiO3from first principles ⬇️

scholarly article in Physical Review B, vol. 90 no. 16, October 2014

Interfacial Cation-Defect Charge Dipoles in Stacked TiO2/Al2O3 Gate Dielectrics

artículo científico publicado en 2018

Intrinsic and extrinsic causes of electron accumulation layers on InAs surfaces

Intrinsic volume scaling of thermoinduced magnetization in antiferromagnetic nanoparticles

scholarly article in Physical Review B, vol. 72 no. 14, October 2005

LDA + U and hybrid functional calculations for defects in ZnO, SnO2, and TiO2

Mechanism of visible-light photocatalysis in nitrogen-doped TiO₂.

artículo científico publicado en 2011

Mechanisms for the decomposition and dehydrogenation of Li amide/imide ⬇️

scholarly article in Physical Review B, vol. 85 no. 6, February 2012

Metal versus insulator behavior in ultrathinSrTiO3-based heterostructures

scholarly article in Physical Review B, vol. 94 no. 3, July 2016

Microscopic picture of the single vacancy in germanium

scholarly article by A. Fazzio et al published 15 January 2000 in Physical Review B

Mutual Passivation of Electrically Active and Isovalent Impurities in Dilute Nitrides

artículo científico publicado en 2008

Native defects in Al2O3 and their impact on III-V/Al2O3 metal-oxide-semiconductor-based devices

Native point defects and dangling bonds in α-Al2O3

Native point defects in ZnO

scholarly article in Physical Review B, vol. 76 no. 16, October 2007

Native point defects inLaAlO3: A hybrid functional study

article

Nature and evolution of the band-edge states inMoS2: From monolayer to bulk

scholarly article in Physical Review B, vol. 90 no. 20, November 2014

New insights into the role of native point defects in ZnO

article published in 2006

Observation by resonant angle-resolved photoemission of a critical thickness for 2-dimensional electron gas formation in SrTiO3 embedded in GdTiO3

Observation of a topologically non-trivial surface state in half-Heusler PtLuSb (001) thin films

artículo científico publicado en 2016

Optimizing optical absorption of TiO2 by alloying with TiS2

Origins of optical absorption and emission lines in AlN

Oxide interfaces for novel electronic applications

Oxygen vacancies and donor impurities in β-Ga2O3

Oxygen vacancies in ZnO

Phase transformations upon doping in WO3.

artículo científico publicado en 2017

Physics of defects and hydrogen in dilute nitrides

Point defects in Al2O3 and their impact on gate stacks

Point defects, impurities, and small hole polarons inGdTiO3

scholarly article in Physical Review B, vol. 93 no. 11, March 2016

Point-defect-mediated dehydrogenation of AlH3

Polymorphism in CuInS2 epilayers: Origin of additional Raman modes

Quantum computing with defects

artículo científico publicado en 2010

Reconstructions and origin of surface states on AlN polar and nonpolar surfaces

article

Role of Si and Ge as impurities in ZnO

scholarly article in Physical Review B, vol. 80 no. 20, November 2009

Role of hydrogen at germanium/dielectric interfaces

scholarly article by C.G. Van de Walle et al published November 2008 in Thin Solid Films

Role of nitrogen vacancies in the luminescence of Mg-doped GaN

Role of oxygen vacancies in crystalline WO3

Role of self-trapping in luminescence andp-type conductivity of wide-band-gap oxides

scholarly article in Physical Review B, vol. 85 no. 8, February 2012

Self-Catalyzed Sensitization of CuO Nanowires via a Solvent-free Click Reaction

artículo científico publicado en 2020

Self-consistent band-gap corrections in density functional theory using modified pseudopotentials

scholarly article in Physical Review B, vol. 75 no. 3, January 2007

Self-interstitial defect in germanium

scholarly article by Antônio J. R. da Silva et al published 15 October 2000 in Physical Review B

Shallow versus deep nature of Mg acceptors in nitride semiconductors

artículo científico publicado en 2012

Shedding light on doping of gallium nitride

scholarly article by John L. Lyons et al published 19 July 2012 in SPIE newsroom

Small hole polarons in rare-earth titanates

Small polaron-related recombination in BaxSr1−xTiO3 thin films by cathodoluminescence spectroscopy

Small polarons and point defects in barium cerate

scholarly article in Physical Review B, vol. 92 no. 21, December 2015

Solute Diffusion in Metals: Larger Atoms Can Move Faster

artículo científico publicado en 2004

Sources of Electrical Conductivity inSnO2

artículo científico publicado en 2008

Sources of unintentional conductivity in InN

Stability and mobility of native point defects in AlH3

article

Strain effects on the electronic structure of SrTiO3: Toward high electron mobilities

article

Strong effect of electron-phonon interaction on the lattice thermal conductivity in 3C-SiC

Structural and electronic properties ofSrZrO3and Sr(Ti,Zr)O3alloys

scholarly article in Physical Review B, vol. 92 no. 8, August 2015

Structural and electronic properties ofZnGeAs2

scholarly article in Physical Review B, vol. 63 no. 19, May 2001

Structural origins of the properties of rare earth nickelate superlattices

scholarly article in Physical Review B, vol. 87 no. 6, February 2013

Structure and energetics ofLaAlO3(001) surfaces

scholarly article in Physical Review B, vol. 90 no. 23, December 2014

Substrate-supported large-band-gap quantum spin Hall insulator based on III-V bismuth layers

scholarly article in Physical Review B, vol. 94 no. 19, November 2016

Sulfur doping of AlN and AlGaN for improved n-type conductivity

The Particle‐Size Dependence of the Activation Energy for Decomposition of Lithium Amide ⬇️

artículo científico publicado el 5 de julio de 2011

The role of native defects in the transport of charge and mass and the decomposition of Li4BN3H10 ⬇️

artículo científico publicado en 2014

The role of oxygen-related defects and hydrogen impurities in HfO2 and ZrO2

Theoretical Study of Antistructure Defects in GaAs

Theoretical study of defect complexes related with antisites in GaAs

Theoretical study of the effects of isovalent coalloying of Bi and N in GaAs

scholarly article in Physical Review B, vol. 65 no. 11, February 2002

Thermal transport across metal silicide-silicon interfaces: An experimental comparison between epitaxial and nonepitaxial interfaces ⬇️

scholarly article in Physical Review B, vol. 95 no. 8, February 2017

Tin dioxide from first principles: Quasiparticle electronic states and optical properties

article by A. Schleife et al published 18 January 2011 in Physical Review B

Transport properties of KTaO3 from first-principles ⬇️

artículo científico publicado en 2016

Tuning bad metal and non-Fermi liquid behavior in a Mott material: Rare-earth nickelate thin films

artículo científico publicado en 2015

TurningSrTiO3into a Mott insulator

scholarly article in Physical Review B, vol. 90 no. 19, November 2014

Two-Atom Structures of Ge on Si(100): Dimers versus Adatom Pairs

artículo científico publicado en 2001

Vacancies and small polarons inSrTiO3

scholarly article in Physical Review B, vol. 90 no. 8, August 2014

Vacancy defects in indium oxide: An ab-initio study

scholarly article by Pakpoom Reunchan et al published May 2011 in Current Applied Physics

Valence-band offsets of CoTiSb/In0.53Ga0.47As and CoTiSb/In0.52Al0.48As heterojunctions

Valency configuration of transition metal impurities in ZnO

Vibrational and crystalline properties of polymorphicCuInC2(C=Se,S)chalcogenides

scholarly article in Physical Review B, vol. 71 no. 5, February 2005

Vibrational signatures of OTe and OTe–VCd in CdTe: A first-principles study

article

Why nitrogen cannot lead to p-type conductivity in ZnO

scholarly article by J. L. Lyons et al published 21 December 2009 in Applied Physics Letters

Lista de obras de Anderson Janotti

(InxGa1−x)2O3alloys for transparent electronics

A first-principles study of the effect of Ta on the superlattice intrinsic stacking fault energy of L12-Co3(Al,W)

A pathway to p-type wide-band-gap semiconductors

A simple electron counting model for half-Heusler surfaces.

Absolute deformation potentials and band alignment of wurtzite ZnO, MgO, and CdO

Absolute surface energies of polar and nonpolar planes of GaN

Acceptor doping in the proton conductor SrZrO3.

Advances in electronic structure methods for defects and impurities in solids

Alloying Effects in the γ′ Phase of Co-Based Superalloys

Alternative sources of p-type conduction in acceptor-doped ZnO

Ambipolar doping in SnO

Atomic and electronic structure of hydrogen-related centers in hydrogen storage materials

BaSnO3 as a channel material in perovskite oxide heterostructures

Band alignment and p -type doping of ZnSnN2

Band alignment at band-insulator/Mott-insulator interfaces

Band alignments and polarization properties of BN polymorphs

Band offsets in complex-oxide thin films and heterostructures of SrTiO3/LaNiO3 and SrTiO3/GdTiO3 by soft and hard X-ray photoelectron spectroscopy

Brittle fracture toughnesses of GaN and AlN from first-principles surface-energy calculations

Carbon as a Shallow Donor in Transparent Conducting Oxides

Carbon impurities and the yellow luminescence in GaN

Carbon-induced trapping levels in oxide dielectrics

Carbon-nitrogen molecules in GaAs and GaP

Carrier density control of magnetism and Berry phases in doped EuTiO3

Carrier-Density-Induced Ferromagnetism in EuTiO_{3} Bulk and Heterostructures

Competition between ferromagnetism and antiferromagnetism in FePt

Computational design of a material for high-efficiency spin-polarized electron source

Concerted-exchange mechanism for antistructure pair defects in GaAs

Conductivity and transparency of TiO2from first principles

Controlling the Electronic Structures of Perovskite Oxynitrides and their Solid Solutions for Photocatalysis

Controlling the conductivity of InN

Controlling the density of the two-dimensional electron gas at the SrTiO3/LaAlO3interface

Correct Implementation of Polarization Constants in Wurtzite Materials and Impact on III-Nitrides ⬇️

Dangling bonds and vacancies in germanium

Dangling-bond defects and hydrogen passivation in germanium

Decomposition mechanism and the effects of metal additives on the kinetics of lithium alanate ⬇️

Deep donor state of the copper acceptor as a source of green luminescence in ZnO

Defect Formation Energies without the Band-Gap Problem: Combining Density-Functional Theory and theGWApproach for the Silicon Self-Interstitial

Defect complexes in GaAs: First-principles calculations

Defects as qubits in3C−and4H−SiC

Defects at Ge/oxide and III–V/oxide interfaces

Defects in AlN as candidates for solid-state qubits

Defects in SiC for quantum computing

Dehydrogenation of AlH3 via the Vacancy Clustering Mechanism

Depth-Resolved Composition and Electronic Structure of Buried Layers and Interfaces in a LaNiO 3 /SrTiO 3 Superlattice from Soft- and Hard- X-ray Standing-Wave Angle-Resolved Photoemission

Determination of the Mott-Hubbard gap inGdTiO3

Direct View at Excess Electrons inTiO2Rutile and Anatase ⬇️

Disentangling the role of small polarons and oxygen vacancies in CeO2

Donor defects and small polarons on the TiO2(110) surface

Donor–donor binding in semiconductors: Engineering shallow donor levels for ZnTe

Dual behavior of excess electrons in rutile TiO2

Effect of transition-metal additives on hydrogen desorption kinetics of MgH2

Effects of Hydrogen on the Electronic Properties of Dilute GaAsN Alloys

Effects of La 5d and 4f states on the electronic and optical properties of LaAlO3

Effects of N on the electronic structures of H defects in III–V semiconductors

Effects of biaxial stress and layer thickness on octahedral tilts in LaNiO3

Effects of carbon on the electrical and optical properties of InN, GaN, and AlN

Effects of cationdstates on the structural and electronic properties of III-nitride and II-oxide wide-band-gap semiconductors

Effects of doping on the lattice parameter of SrTiO3

Effects of hole localization on limiting p-type conductivity in oxide and nitride semiconductors

Effects of strain on the band structure of group-III nitrides

Effects of strain on the electron effective mass in GaN and AlN

Effects of surface reconstructions on oxygen adsorption at AlN polar surfaces

Electrical activity of hydrogen impurities in GaSb: First-principles calculations

Electrically active Er doping in InAs, In0.53Ga0.47As, and GaAs

Electron and chemical reservoir corrections for point-defect formation energies

Electronic Structure Characterization of Hydrogen Terminated n-type Silicon Passivated by Benzoquinone-Methanol Solutions

Electronic and magnetic properties of MnN versus MnAs

Electronic and structural properties of vacancy and self-interstitial defects in germanium

Electronic structure of transition-metal impurities inp-type ZnO

Electrostatic carrier doping of GdTiO3/SrTiO3 interfaces

Energetic, spatial, and momentum character of the electronic structure at a buried interface: The two-dimensional electron gas between two metal oxides

Energetics and optical properties of nitrogen impurities in SrTiO3 from hybrid density-functional calculations

Epitaxially stabilized AgGaSe2 for high-efficiency spin-polarized electron source

Erratum: “Oxygen vacancies and donor impurities in β-Ga2O3” [Appl. Phys. Lett. 97, 142106 (2010)]

First-Principles Calculations of Point Defects for Quantum Technologies

First-Principles Optical Spectra forFCenters in MgO

First-principles analysis of electron transport in BaSnO3

First-principles calculations for point defects in solids

First-principles calculations of optical transitions at native defects and impurities in ZnO