Lista de obras - Stephan Menzel - Dominio Público Uruguay

Analytical analysis of the generic SET and RESET characteristics of electrochemical metallization memory cells ⬇️

artículo científico publicado el 25 de septiembre de 2013

Anomalous Resistance Hysteresis in Oxide ReRAM: Oxygen Evolution and Reincorporation Revealed by In Situ TEM.

artículo científico publicado en 2017

Applicability of Well-Established Memristive Models for Simulations of Resistive Switching Devices

article published in 2014

Compact modeling of CRS devices based on ECM cells for memory, logic and neuromorphic applications

artículo científico publicado en 2013

Comprehensive modeling of electrochemical metallization memory cells

artículo científico publicado en 2017

Current channeling along extended defects during electroreduction of SrTiO

artículo científico publicado en 2019

Determination of the electrostatic potential distribution in Pt/Fe:SrTiO₃/Nb:SrTiO₃ thin-film structures by electron holography

artículo científico publicado en 2014

Experimental Verification of Uncoupled Memristive Cellular Nonlinear Network by Processing the EDGE Detection Task

artículo científico publicado en 2024

Exploring Multi-Valued Logic and its Application in Emerging Post-CMOS Technologies

artículo científico publicado en 2024

Impact of oxygen exchange reaction at the ohmic interface in Ta2O5-based ReRAM devices

artículo científico publicado en 2016

In-Gap States and Band-Like Transport in Memristive Devices

scientific article published on 27 September 2018

Introduction to new memory paradigms: memristive phenomena and neuromorphic applications

scientific article published on 01 February 2019

In‐Memory Binary Vector–Matrix Multiplication Based on Complementary Resistive Switches

artículo científico publicado en 2020

Low-current operations in 4F(2)-compatible Ta2O5-based complementary resistive switches

artículo científico publicado en 2015

Metallic filamentary conduction in valence change-based resistive switching devices: the case of TaOx thin film with x∼ 1

scientific article published on 09 September 2019

Nanoionic memristive phenomena in metal oxides: the valence change mechanism

artículo científico publicado en 2021

On the universality of the I-V switching characteristics in non-volatile and volatile resistive switching oxides

artículo científico publicado en 2019

Oxygen Exchange Processes between Oxide Memristive Devices and Water Molecules

scientific article published on 07 June 2018

Reliability aspects of binary vector-matrix-multiplications using ReRAM devices

artículo científico publicado en 2022

SET kinetics of electrochemical metallization cells: influence of counter-electrodes in SiO2/Ag based systems

artículo científico publicado en 2017

Spectroscopic Indications of Tunnel Barrier Charging as the Switching Mechanism in Memristive Devices

Spectroscopic elucidation of ionic motion processes in tunnel oxide-based memristive devices

scientific article published on 01 February 2019

Spectroscopic proof of the correlation between redox-state and charge-carrier transport at the interface of resistively switching Ti/PCMO devices

artículo científico publicado en 2014

Stateful Three-Input Logic with Memristive Switches

artículo científico publicado en 2019

Subfilamentary Networks Cause Cycle-to-Cycle Variability in Memristive Devices

artículo científico publicado en 2017

Switching kinetics of electrochemical metallization memory cells ⬇️

artículo científico publicado el 3 de abril de 2013

The ultimate switching speed limit of redox-based resistive switching devices

artículo científico publicado en 2019

Understanding filamentary growth in electrochemical metallization memory cells using kinetic Monte Carlo simulations

artículo científico publicado en 2015

Understanding the Coexistence of Two Bipolar Resistive Switching Modes with Opposite Polarity in Pt/TiO2/Ti/Pt Nanosized ReRAM Devices

scientific article published on 23 August 2018

Volatile HRS asymmetry and subloops in resistive switching oxides

artículo científico publicado en 2017

Lista de obras de Stephan Menzel

Analytical analysis of the generic SET and RESET characteristics of electrochemical metallization memory cells ⬇️

Anomalous Resistance Hysteresis in Oxide ReRAM: Oxygen Evolution and Reincorporation Revealed by In Situ TEM.

Applicability of Well-Established Memristive Models for Simulations of Resistive Switching Devices

Compact modeling of CRS devices based on ECM cells for memory, logic and neuromorphic applications

Comprehensive modeling of electrochemical metallization memory cells

Current channeling along extended defects during electroreduction of SrTiO

Determination of the electrostatic potential distribution in Pt/Fe:SrTiO₃/Nb:SrTiO₃ thin-film structures by electron holography

Experimental Verification of Uncoupled Memristive Cellular Nonlinear Network by Processing the EDGE Detection Task

Exploring Multi-Valued Logic and its Application in Emerging Post-CMOS Technologies

Impact of oxygen exchange reaction at the ohmic interface in Ta2O5-based ReRAM devices

In-Gap States and Band-Like Transport in Memristive Devices

Introduction to new memory paradigms: memristive phenomena and neuromorphic applications

In‐Memory Binary Vector–Matrix Multiplication Based on Complementary Resistive Switches

Low-current operations in 4F(2)-compatible Ta2O5-based complementary resistive switches

Metallic filamentary conduction in valence change-based resistive switching devices: the case of TaOx thin film with x∼ 1

Nanoionic memristive phenomena in metal oxides: the valence change mechanism

On the universality of the I-V switching characteristics in non-volatile and volatile resistive switching oxides

Oxygen Exchange Processes between Oxide Memristive Devices and Water Molecules

Reliability aspects of binary vector-matrix-multiplications using ReRAM devices

SET kinetics of electrochemical metallization cells: influence of counter-electrodes in SiO2/Ag based systems

Spectroscopic Indications of Tunnel Barrier Charging as the Switching Mechanism in Memristive Devices

Spectroscopic elucidation of ionic motion processes in tunnel oxide-based memristive devices

Spectroscopic proof of the correlation between redox-state and charge-carrier transport at the interface of resistively switching Ti/PCMO devices

Stateful Three-Input Logic with Memristive Switches

Subfilamentary Networks Cause Cycle-to-Cycle Variability in Memristive Devices

Switching kinetics of electrochemical metallization memory cells ⬇️

The ultimate switching speed limit of redox-based resistive switching devices

Understanding filamentary growth in electrochemical metallization memory cells using kinetic Monte Carlo simulations

Understanding the Coexistence of Two Bipolar Resistive Switching Modes with Opposite Polarity in Pt/TiO2/Ti/Pt Nanosized ReRAM Devices

Volatile HRS asymmetry and subloops in resistive switching oxides